公开(公告)号：US08582277B2

公开(公告)日：2013-11-12

申请号：US13300952

申请日：2011-11-21

申请人： Hirobumi Tanaka ,  Makoto Endo ,  Satoko Ueda ,  Daisuke Ueda ,  Shogo Murosawa ,  Daisuke Yoshida ,  Kenta Ono ,  Minoru Ogasawara ,  Tatsuya Kikuchi

发明人： Hirobumi Tanaka ,  Makoto Endo ,  Satoko Ueda ,  Daisuke Ueda ,  Shogo Murosawa ,  Daisuke Yoshida ,  Kenta Ono ,  Minoru Ogasawara ,  Tatsuya Kikuchi

IPC分类号： H01G4/12 ,  C04B35/468

CPC分类号： H01G4/1227 ,  H01G4/1281 ,  H01G4/30

摘要： A multilayer ceramic electronic component comprising an element body in which a dielectric layer and an internal electrode layer are stacked. The dielectric layer is constituted from a dielectric ceramic composition including; a compound having a perovskite structure expressed by a formula of ABO3 (A is at least one selected from Ba, Ca, and Sr; B is at least one selected from Ti, Zr, and Hf); an oxide of Mg; an oxide of rare earth elements including Sc and Y; and an oxide including Si. The dielectric ceramic composition comprises a plurality of dielectric particles and a grain boundary present in between the dielectric particles. In the grain boundary, when content ratios of Mg and Si are set to D(Mg) and D(Si) respectively, D(Mg) is 0.2 to 1.8 wt % in terms of MgO, and D(Si) is 0.4 to 8.0 wt % in terms of SiO2.

摘要翻译： 一种多层陶瓷电子部件，其特征在于，具有层叠有电介质层和内部电极层的元件体。 电介质层由介电陶瓷组合物构成，包括： 具有由式ABO 3表示的钙钛矿结构的化合物（A是选自Ba，Ca和Sr中的至少一种; B是选自Ti，Zr和Hf中的至少一种）; Mg的氧化物; 包括Sc和Y的稀土元素的氧化物; 和包含Si的氧化物。 电介质陶瓷组合物包含存在于电介质颗粒之间的多个电介质颗粒和晶界。 在晶界中，当Mg和Si的含量比分别设定为D（Mg）和D（Si）时，D（Mg）以MgO计为0.2〜1.8重量％，D（Si）为0.4〜8.0 重量％。

公开(公告)号：US08307772B2

公开(公告)日：2012-11-13

申请号：US12656236

申请日：2010-01-21

申请人： Akifume Nakashima ,  Daisuke Ueda

发明人： Akifume Nakashima ,  Daisuke Ueda

IPC分类号： D05B23/00

CPC分类号： D05C7/00 ,  D05B29/06 ,  D05D2303/00

摘要： A sewing machine including a presser foot that presses a workpiece, a presser bar that has a lower end allowing detachable attachment of the presser foot; a presser bar vertically moving mechanism that moves the presser bar up and down; a presser bar driver that drives the presser bar vertically moving mechanism; a needle plate that has an upper surface for placing the workpiece; a projecting element that is detachably attached to the presser bar and that is driven up and down with the presser bar as the presser bar is driven up and down by the presser bar driver through the presser bar vertically moving mechanism to form embosses on the workpiece by downwardly pressing the workpiece; and a receiving section that is provided on the upper surface of the needle plate that opposes the projecting element to receive a tip of the projecting element.

摘要翻译： 一种缝纫机，包括按压工件的压脚，具有下端的压脚，允许压脚可拆卸地附接; 按压杆上下移动机构; 一个驱动压杆垂直移动机构的压脚驱动器; 具有用于放置所述工件的上表面的针板; 突出元件，其可拆卸地附接到压脚杆，并且当压杆作为压杆时上下驱动，压杆驱动器通过压杆垂直移动机构被上下驱动，以在工件上形成压花，以通过 向下按压工件; 以及接收部，其设置在与所述突出元件相对的所述针板的上表面上，以容纳所述突出元件的前端。

公开(公告)号：US08203376B2

公开(公告)日：2012-06-19

申请号：US12445390

申请日：2007-11-20

申请人： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Hiroaki Ueno ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Hiroaki Ueno ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H03K17/687

CPC分类号： H01L29/7787 ,  H01L27/0605 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/739 ,  H01L29/8124

摘要： A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.

摘要翻译： 半导体器件包括形成在衬底11上并具有沟道区的半导体层堆叠13，在半导体层叠层13上彼此隔开形成的第一电极16A和第二电极16B，形成在第一栅电极18A之间的第一栅电极18A 第一电极16A和第二电极16B，以及形成在第一栅电极18A和第二电极16B之间的第二栅电极18B。 在半导体层堆叠13和第一栅电极18A之间形成具有p型导电性的第一控制层19A。

公开(公告)号：US08134191B2

公开(公告)日：2012-03-13

申请号：US12160291

申请日：2006-07-11

申请人： Takumi Yamaguchi ,  Yuuichi Inaba ,  Daisuke Ueda ,  Yoshiyuki Matsunaga

发明人： Takumi Yamaguchi ,  Yuuichi Inaba ,  Daisuke Ueda ,  Yoshiyuki Matsunaga

IPC分类号： H01L31/09

CPC分类号： H04N9/045 ,  H04N5/33 ,  H04N5/332

摘要： A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.

摘要翻译： 一种使用可见光进行彩色成像并使用红外光成像的固态成像装置，所述固态成像装置包括多个二维排列的像素单元，每个像素单元中的每一个主要透过可见光和红外线之一 光，其中滤光器被布置成使得布置有主要透射可见光的多个滤光器的第一布置单元和布置有主要透射可见光的滤光器的第二单元和布置有主要透射红外光的滤光器的布置的第二单元是布置的， 交替地排列在行方向和列方向上。 此外，在第一单元中布置有包括发射红光，绿光和蓝光中的一种的三种滤光器的滤色器，并且在第二种布置中布置了四种滤色片，每种滤色片透过红光，绿光 ，蓝光和红外灯。

公开(公告)号：US08076698B2

公开(公告)日：2011-12-13

申请号：US11995040

申请日：2006-06-27

申请人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

发明人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

IPC分类号： H01L31/0328

CPC分类号： H01L29/739 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786

摘要： In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with the p-type contact layer 106, and a source electrode 108 and a drain electrode 109 provided on the undoped AlGaN layer 104. By applying a positive voltage to the p-type control layer 105, holes are injected into a channel to increase a current flowing in the channel.

摘要翻译： 在晶体管中，在蓝宝石衬底101上依次形成AlN缓冲层102，未掺杂的GaN层103，未掺杂的AlGaN层104，p型控制层105和p型接触层106。 晶体管还包括与p型接触层106欧姆接触的栅电极110以及设置在未掺杂的AlGaN层104上的源电极108和漏极109.通过向p型控制层105施加正电压 ，孔被注入到通道中以增加在通道中流动的电流。

公开(公告)号：US20100327486A1

公开(公告)日：2010-12-30

申请号：US12821429

申请日：2010-06-23

申请人： Norimasa Kuki ,  Yoshikane Akiyama ,  Mitiharu Hikosaka ,  Kazuhiko Kato ,  Kazumasa Sekido ,  Daisuke Ueda ,  Harumi Niwa ,  Hiroshi Itazu ,  Yuji Mizuno

发明人： Norimasa Kuki ,  Yoshikane Akiyama ,  Mitiharu Hikosaka ,  Kazuhiko Kato ,  Kazumasa Sekido ,  Daisuke Ueda ,  Harumi Niwa ,  Hiroshi Itazu ,  Yuji Mizuno

IPC分类号： B28B1/02

CPC分类号： F16F1/3842 ,  B21H1/18 ,  B21J5/00 ,  B21J5/008 ,  B21J5/12 ,  B21J9/025 ,  B21K21/12 ,  F16F1/3828 ,  F16F1/3863 ,  F16F2230/0035 ,  F16F2230/02

摘要： A method of manufacturing a cylindrical member having anti-slip projections formed on axial end faces, the method comprising the steps of: employing a roller die, which is provided with a circumferential die groove of annular form extending through a medial section in a generatrix direction of a die face defined by an integral tapered outside peripheral face, and with a plurality of sloping die grooves extending in a tapered slope direction of the die face situated to both large-diameter and small-diameter sides of the circumferential die groove; providing plastic working to the axial end face with the small-diameter side of the roller die facing towards an inner peripheral side of the cylindrical member and with the large-diameter side facing towards an outer peripheral side, by pushing the die face against the axial end face while rotating circumferentially; and forming simultaneously an annular water barrier projection and the anti-slip projections.

摘要翻译： 一种制造具有形成在轴向端面上的防滑突起的圆柱形构件的方法，所述方法包括以下步骤：使用辊模，其设置有沿母线方向延伸穿过中间部分的环形的周向模槽 具有由整体的锥形外周面限定的模具面，并且具有沿着位于周向模槽的大直径侧和小直径侧的模面的锥形倾斜方向延伸的多个倾斜模槽; 向所述轴向端面提供塑性加工，所述辊模的小直径侧朝向所述圆筒形构件的内周侧，并且所述大直径侧面向外周侧，通过将所述模具面朝向轴向 端面旋转; 同时形成环形防水突起和防滑突起。

公开(公告)号：US07825434B2

公开(公告)日：2010-11-02

申请号：US11647218

申请日：2006-12-29

申请人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/08

CPC分类号： H01L29/7783 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/432 ,  H01L29/452 ,  H01L29/7787

摘要： A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

摘要翻译： 氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及第四半导体层，形成在与所述主表面相对的所述第一半导体层的表面上，相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体构成。

公开(公告)号：US07773646B2

公开(公告)日：2010-08-10

申请号：US12280603

申请日：2007-03-14

申请人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

发明人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

IPC分类号： H01S3/00

CPC分类号： H01S5/042

摘要： A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.

摘要翻译： 半导体光源包括具有由氮化物半导体构成的多个半导体层的发光器件101和用于驱动发光器件101的驱动电路102.驱动电路102执行正向驱动操作，其中正向电流 被提供给发光装置以使发光装置101发光，并且对发光装置施加反向偏压的反向驱动操作。 反向偏压的大小受流过发光器件的反向电流的值的限制。

公开(公告)号：US20100182895A1

公开(公告)日：2010-07-22

申请号：US12685900

申请日：2010-01-12

申请人： Mitsuaki Oyamada ,  Takashi Iwamura ,  Daisuke Ueda ,  Takehide Endo

发明人： Mitsuaki Oyamada ,  Takashi Iwamura ,  Daisuke Ueda ,  Takehide Endo

IPC分类号： G11B3/70

CPC分类号： G11B7/2535 ,  B82Y10/00 ,  G11B7/245 ,  G11B7/246 ,  G11B7/2534 ,  G11B7/2538 ,  G11B2007/25411 ,  G11B2007/25417 ,  G11B2007/2571 ,  G11B2007/25713 ,  G11B2007/25715

摘要： An optical information recording medium includes a recording layer in which a recording mark formed of a cavity is formed in accordance with a light for recording, and which contains therein a compound having a skeleton expressed by the general formula (1): where R1, R2, R3, and R4 are either hydrogen atoms or substituents.

摘要翻译： 光学信息记录介质包括记录层，其中根据用于记录的光形成由空腔形成的记录标记，并且其中含有具有由通式（1）表示的骨架的化合物：其中R1，R2 ，R 3和R 4为氢原子或取代基。

公开(公告)号：US07738525B2

公开(公告)日：2010-06-15

申请号：US12065991

申请日：2007-07-09

申请人： Daisuke Ueda ,  Masaaki Yuri ,  Yoshiaki Hasegawa ,  Kenichi Matsuda

发明人： Daisuke Ueda ,  Masaaki Yuri ,  Yoshiaki Hasegawa ,  Kenichi Matsuda

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/162 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3404

摘要： A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.

摘要翻译： 半导体激光器（101）包括第一包层（103），有源层（105）和第二覆层（108）。 在激光谐振器的前端面（113）和后端面（114）附近形成有包含氟（即，具有比氮更高的电负性的杂质元素）的窗口区域（115）。 窗口区域115通过将前端面113和后端面114暴露于氟化碳（CF4）等离子体而形成。 布置在窗口区域（115）中的有源层（105）的一部分的有效带隙大于有源层的另一部分的有效带隙，因此，其用作用于抑制 COD。