公开(公告)号：US09716029B2

公开(公告)日：2017-07-25

申请号：US14127926

申请日：2012-06-20

申请人： Fabrice Lallement ,  Christophe Figuet ,  Daniel Delprat

发明人： Fabrice Lallement ,  Christophe Figuet ,  Daniel Delprat

IPC分类号： H01L21/30 ,  H01L21/70 ,  H01L21/762 ,  H01L21/46 ,  H01L21/304 ,  H01L21/322 ,  H01L29/267

CPC分类号： H01L21/76254 ,  H01L29/267

摘要： A method for transferring a layer of semiconductor by providing a donor substrate that includes a useful layer of a semiconductor material, a confinement structure that includes a confinement layer of a semiconductor material having a chemical composition that is different than that of the useful layer, and two protective layers of semiconductor material that are distinct from the confinement layer with the protective layers being arranged on both sides of the confinement layer; introducing ions into a donor substrate, bonding the donor substrate to a receiver substrate, subjecting the donor and receiver substrates to a heat treatment that provides an increase in temperature during which the confinement layer attracts the ions in order to concentrate them in the confinement layer, and detaching the donor substrate from the receiver substrate by breaking the confinement layer.

公开(公告)号：US08658514B2

公开(公告)日：2014-02-25

申请号：US13487066

申请日：2012-06-01

申请人： Patrick Reynaud ,  Sébastien Kerdiles ,  Daniel Delprat

发明人： Patrick Reynaud ,  Sébastien Kerdiles ,  Daniel Delprat

IPC分类号： H01L21/30

CPC分类号： H01L27/1203 ,  H01L21/76254 ,  H01L29/0649

摘要： A manufacturing process for a semiconductor-on-insulator structure having reduced electrical losses and which includes a support substrate made of silicon, an oxide layer and a thin layer of semiconductor material, and a polycrystalline silicon layer interleaved between the support substrate and the oxide layer. The process includes a treatment capable of conferring high resistivity to the support substrate prior to formation of the polycrystalline silicon layer, and then conducting at least one long thermal stabilization on the structure at a temperature not exceeding 950° C. for at least 10 minutes.

摘要翻译： 一种具有降低的电损耗的绝缘体上半导体结构的制造方法，其包括由硅，氧化物层和半导体材料薄层制成的支撑衬底，以及在支撑衬底和氧化物层之间交错的多晶硅层 。 该方法包括能够在形成多晶硅层之前赋予支撑衬底高电阻率的处理，然后在不超过950℃的温度下在该结构上进行至少一个长的热稳定化至少10分钟。

公开(公告)号：US20060141746A1

公开(公告)日：2006-06-29

申请号：US11145455

申请日：2005-06-02

申请人： Cecile Delattre ,  Frederic Metral ,  Daniel Delprat ,  Christophe Maleville

发明人： Cecile Delattre ,  Frederic Metral ,  Daniel Delprat ,  Christophe Maleville

IPC分类号： H01L21/46

CPC分类号： H01L21/76251

摘要： The invention concerns a method of treating one or both bonding surfaces of first and second substrates and in particular, the surfaces of donor and receiver wafers that are intended to be bonded together. A simultaneous cleaning and activation step is carried out immediately prior to bonding the wafers together, by applying to one or both bonding surfaces an activation solution of ammonia (NH4OH) in water, preferably deionized, at a concentration by weight in the range from about 0.05% to 2%. The method is applicable to fabricating structures used in the optics, electronics, or optoelectronics fields.

摘要翻译： 本发明涉及一种处理第一和第二基底的一个或两个结合表面的方法，特别是用于结合在一起的施主和接收晶片的表面。 在将晶片粘合在一起之前，通过在一个或两个粘结表面上施加氨（NH 4 OH）在水中的活化溶液（NH 4 OH）在水中，优选去离子水，同时进行清洗和活化步骤 浓度在约0.05％至2％的范围内。 该方法适用于制造用于光学，电子或光电领域的结构。

公开(公告)号：US20130071997A1

公开(公告)日：2013-03-21

申请号：US13702062

申请日：2011-06-20

申请人： Daniel Delprat ,  Carine Duret ,  Nadia Ben-Mohamed ,  Fabrice Lallement

发明人： Daniel Delprat ,  Carine Duret ,  Nadia Ben-Mohamed ,  Fabrice Lallement

IPC分类号： H01L21/18

CPC分类号： H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

摘要： A method for reducing irregularities at the surface of a layer transferred from a source substrate to a glass-based support substrate, by generating a weakening zone in the source substrate; contacting the source substrate and the glass-based support substrate; and splitting the source substrate at the weakening zone; wherein the glass-based substrate has a thickness of between 300 μm and 600 μm.

摘要翻译： 一种通过在源极衬底中产生弱化区来减少从源极衬底转移到玻璃基支撑衬底的层表面的不规则性的方法; 使源极基板和玻璃基支撑基板接触; 并在弱化区分裂源极衬底; 其特征在于，所述玻璃基底的厚度为300μm〜600μm。

公开(公告)号：US20120088350A1

公开(公告)日：2012-04-12

申请号：US13248763

申请日：2011-09-29

申请人： Sébastien Kerdiles ,  Daniel Delprat

发明人： Sébastien Kerdiles ,  Daniel Delprat

IPC分类号： H01L21/30

CPC分类号： H01L21/67132 ,  H01L21/02 ,  H01L21/187 ,  H01L21/76251

摘要： The present invention concerns a method for bonding a first substrate having a first surface to a second substrate having a second surface. This method includes the steps of holding the first substrate by at least two support points, positioning the first substrate and the second substrate so that the first surface and the second surface face each other, deforming the first substrate by applying between at least one pressure point and the two support points a strain toward the second substrate, bringing the deformed first surface and the second surface into contact, and progressively releasing the strain to facilitate bonding of the substrates while minimizing or avoiding the trapping of air bubbles between the substrates.

摘要翻译： 本发明涉及一种用于将具有第一表面的第一衬底与具有第二表面的第二衬底结合的方法。 该方法包括以下步骤：通过至少两个支撑点保持第一基板，将第一基板和第二基板定位成使得第一表面和第二表面彼此面对，使第一基板通过在至少一个压力点 并且两个支撑点朝向第二基板的应变，使变形的第一表面和第二表面接触，并逐渐释放应变以促进基板的接合，同时最小化或避免在基板之间捕获气泡。

公开(公告)号：US07645682B2

公开(公告)日：2010-01-12

申请号：US11873311

申请日：2007-10-16

申请人： Sebastien Kerdiles ,  Willy Michel ,  Walter Schwarzenbach ,  Daniel Delprat

发明人： Sebastien Kerdiles ,  Willy Michel ,  Walter Schwarzenbach ,  Daniel Delprat

IPC分类号： H01L21/76 ,  H01L21/46 ,  H01L21/30 ,  H01L21/461

CPC分类号： H01L21/2007 ,  H01L21/02052

摘要： The invention relates to improvements in a method for molecularly bonding first and second substrates together by placing them in surface to surface contact. The improvement includes, prior to placing the substrates in contact, cleaning the surface of one or both of the substrates in a manner to provide a cleaned surface that is slightly roughened compared to a conventionally polished surface, and heating at least one or both of the substrates prior to placing the substrates in contact while retaining the heating at least until the substrates are in surface to surface contact.

摘要翻译： 本发明涉及通过将第一和第二基底与表面与表面接触放置而将第一和第二基底分子结合在一起的方法的改进。 改进之处在于，在将基板放置接触之前，以与常规研磨的表面相比较，以提供与粗糙表面稍微粗糙的清洁表面的方式清洁一个或两个基板的表面，并加热至少一个或两个 在将衬底置于接触状态之前，至少保持加热至基板处于表面与表面接触之前的基板。

公开(公告)号：US07485545B2

公开(公告)日：2009-02-03

申请号：US11328061

申请日：2006-01-10

申请人： Nadia Ben Mohamed ,  Eric Neyret ,  Daniel Delprat

发明人： Nadia Ben Mohamed ,  Eric Neyret ,  Daniel Delprat

IPC分类号： H01L21/302

CPC分类号： H01L21/76224 ,  H01L21/76254

摘要： A method for configuring a process for treating a semiconductor wafer. A minimum layer thickness of a transferred layer to be provided is determined to obtain a processed layer that has a preselected target thickness and target maximum density of through holes that extend completely therethrough, by conducting a predetermined finishing sequence of operations that improve the surface quality of the layer. The minimum thickness is determined such that the density of through holes remains below the target maximum density after each operation in the finishing sequence.

摘要翻译： 一种用于配置半导体晶片处理工艺的方法。 确定要提供的转移层的最小层厚度，以获得具有预选的目标厚度和通过其完全延伸的通孔的目标最大密度的处理层，通过进行预定的整理操作顺序来提高表面质量 层。 确定最小厚度，使得在整理顺序中的每个操作之后，通孔的密度保持低于目标最大密度。

公开(公告)号：US20070216042A1

公开(公告)日：2007-09-20

申请号：US11472693

申请日：2006-06-21

申请人： Daniel Delprat ,  Eric Neyret ,  Oleg Kononchuk ,  Patrick Reynaud ,  Michael Stinco

发明人： Daniel Delprat ,  Eric Neyret ,  Oleg Kononchuk ,  Patrick Reynaud ,  Michael Stinco

IPC分类号： H01L21/322

CPC分类号： H01L21/02032 ,  H01L21/76254

摘要： This invention provides methods for manufacturing compound-material wafers and methods for recycling donor substrates that results from manufacturing compound-material wafers. The provided methods includes at least one further thermal treatment step configured to at least partially reduce oxygen precipitates and/or nuclei. Reduction of oxygen precipitates and/or nuclei, improves the recycling rate of the donor substrate.

摘要翻译： 本发明提供了用于制造复合材料晶片的方法以及由制造复合材料晶片产生的用于再循环施主衬底的方法。 所提供的方法包括至少一个另外的热处理步骤，其被配置为至少部分地减少氧沉淀物和/或核。 减少氧沉淀物和/或核，提高了供体底物的再循环率。

公开(公告)号：US06459158B1

公开(公告)日：2002-10-01

申请号：US09929550

申请日：2001-08-14

申请人： Daniel Delprat ,  Manuel Fendler ,  Anatolie Lupu

发明人： Daniel Delprat ,  Manuel Fendler ,  Anatolie Lupu

IPC分类号： H01L2348

CPC分类号： G02B6/4232 ,  G02B6/4228 ,  G02B6/423 ,  G02B6/4238

摘要： An apparatus (10, 310) is provided including a first chip having at least one recess (18, 418) formed on the first chip, in the form of an optoelectronic/photonic device (12, 314), at a pre-selected location. A second chip, in the form of an optical component supporting substrate (14, 312), includes at least one projection (24, 424) extending therefrom at a pre-selected location, wherein at least one of the recess and the projection includes angled walls (28, 428) having an angle relative to the top of the wall less than 54.74° for capturing and directing the other of the at least one recess (18, 418) and the at least one projection (24, 424) for aligning the first chip to the second chip.

摘要翻译： 提供了一种设备（10,310），其包括第一芯片，其具有形成在第一芯片上的至少一个凹部（18,418），其以光电子/光子器件（12,314）的形式在预选位置 。 以光学部件支撑衬底（14,312）的形式的第二芯片包括在预选位置从其延伸的至少一个突起（24,424），其中凹部和突起中的至少一个包括成角度 具有相对于壁的顶部具有一角度的壁（28,428）小于54.74°，用于捕获和引导所述至少一个凹部（18,418）中的另一个和所述至少一个突起（24,424），用于对准 第一个芯片到第二个芯片。

公开(公告)号：US08518799B2

公开(公告)日：2013-08-27

申请号：US13714792

申请日：2012-12-14

申请人： Nadia Ben Mohamed ,  Ta-Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

发明人： Nadia Ben Mohamed ,  Ta-Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

IPC分类号： H01L21/30

CPC分类号： H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

摘要： A process of making semiconductor-on-glass substrates having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer between the silicon film and the glass in an ion implantation thin film transfer process by depositing a stiffening layer or layers on one of the donor wafer or the glass substrate in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

摘要翻译： 在离子注入薄膜转移工艺中，通过将硬化层或层沉积在硅膜和玻璃之间在半导体玻璃基板上具有相对刚性（例如相对较高的杨氏模量为125或更高）的硬化层 一个施主晶片或玻璃基板，以消除在薄膜转移过程中在转移的硅膜的表面中形成的峡谷和针孔。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。