Lithographic photoresist composition and process for its use
    3.
    发明授权
    Lithographic photoresist composition and process for its use 有权
    平版光刻胶组合物及其使用方法

    公开(公告)号:US06730452B2

    公开(公告)日:2004-05-04

    申请号:US09771261

    申请日:2001-01-26

    IPC分类号: G03F7039

    摘要: A lithographic photoresist composition is provided that can be used as a chemical amplification photoresist. In a preferred embodiment, the composition is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and has improved sensitivity and resolution. The composition comprises a fluorinated vinylic polymer, particularly a fluorinated methacrylate, a fluorinated methacrylonitrile, or a fluorinated methacrylic acid, and a photoacid generator. The polymer may be a homopolymer or a copolymer. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译: 提供可用作化学扩增光致抗蚀剂的平版光刻胶组合物。 在优选的实施方案中,组合物对深紫外辐射即波长小于250nm(包括157nm,193nm和248nm辐射)的辐射基本上是透明的,并具有改进的灵敏度和分辨率。 组合物包含氟化乙烯基聚合物,特别是氟化甲基丙烯酸酯,氟化甲基丙烯腈或氟化甲基丙烯酸,以及光酸产生剂。 聚合物可以是均聚物或共聚物。 还提供了使用该组合物在衬底上产生抗蚀剂图像的方法,即在集成电路等的制造中。

    Photoresists for Visible Light Imaging
    10.
    发明申请
    Photoresists for Visible Light Imaging 有权
    可见光成像光刻胶

    公开(公告)号:US20080166669A1

    公开(公告)日:2008-07-10

    申请号:US12050589

    申请日:2008-03-18

    IPC分类号: G03F7/30

    摘要: A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.

    摘要翻译: 公开了一种使用一类光刻胶组合物形成图形物体的方法,其适用于可见光并且不需要曝光后烘烤步骤。 所公开的光致抗蚀剂优选是化学放大光致抗蚀剂,并含有具有式(I)结构的光敏剂:其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基 R 1和R 2可以相同或不同,并且具有结构-XR 3,其中X是O或S,R“ SUP> 3是C 1 -C 6烃基或含杂原子的C 1 -C 6 N >烃基,R 4和R 5独立地选自氢和-XR 3 O 3,或者如果各自的邻位 另一个可以一起形成五元或六元芳环,条件是含有Ar 1,Ar 2或R 0的任何杂原子 > 3 是O或S.还公开了所公开的光致抗蚀剂的使用,特别是用于制造全息衍射光栅。