公开(公告)号：US06597067B1

公开(公告)日：2003-07-22

申请号：US08839843

申请日：1997-04-17

申请人： Glenn Allen Biery ,  Daniel Mark Boyne ,  Hormazdyar Minocher Dalal ,  H. Daniel Schnurmann

发明人： Glenn Allen Biery ,  Daniel Mark Boyne ,  Hormazdyar Minocher Dalal ,  H. Daniel Schnurmann

IPC分类号： H01L2348

CPC分类号： H01L23/53257 ,  H01L23/5283 ,  H01L23/53214 ,  H01L2924/0002 ,  Y10S257/915 ,  H01L2924/00

摘要： An interconnection wiring structure in an integrated circuit chip designed to eliminate electromigration. The structure includes segments of aluminum interspersed with segments of refractory metal, wherein each aluminum segment is followed by a segment of refractory metal. The aluminum and refractory metal segments are aligned with respect to each other to ensure electrical continuity and to force the electrical current to sequentially cross the aluminum and the refractory metal segments. The above structure can be advantageously enhanced by adding an underlayer, an overlayer or both, all of which are made of refractory metal. The interconnection wire structure described above can be expanded to include vias or studs linking interconnection lines placed at different levels of the IC chip.

摘要翻译： 设计用于消除电迁移的集成电路芯片中的互连布线结构。 该结构包括散布有难熔金属片段的铝片段，其中每个铝片段之后是难熔金属片段。 铝和难熔金属段相对于彼此对准以确保电连续性并且迫使电流顺序地交叉铝和难熔金属段。 通过添加由难熔金属制成的底层，覆盖层或两者均可有利地提高上述结构。 上述互连线结构可以扩展为包括连接放置在IC芯片的不同级别的互连线的通孔或螺柱。