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    Stacked acoustic resonator comprising a bridge
    3.
    发明授权
    Stacked acoustic resonator comprising a bridge 有权
    包括桥的堆叠声谐振器

    公开(公告)号：US09136818B2

    公开(公告)日：2015-09-15

    申请号：US13074262

    申请日：2011-03-29

    申请人： Dariusz Burak ,  Alexandre Shirakawa ,  Stefan Bader

    发明人： Dariusz Burak ,  Alexandre Shirakawa ,  Stefan Bader

    IPC分类号： H03H9/54 ,  H03H9/02 ,  H03H9/13 ,  H03H9/58

    CPC分类号： H03H9/02 ,  H03H9/02086 ,  H03H9/132 ,  H03H9/585

    摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

    摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极; 设置在所述第二电极上的第二压电层; 设置在所述第二压电层上的第三电极; 以及设置在所述第一电极和所述第三电极之间的桥。

    BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER
    4.
    发明申请
    BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER 有权
    包含非压电层的大容量谐振谐振器

    公开(公告)号：US20120319530A1

    公开(公告)日：2012-12-20

    申请号：US13161946

    申请日：2011-06-16

    申请人： Dariusz BURAK ,  Jyrki KAITILA ,  Alexandre SHIRAKAWA ,  Martin Handtmann ,  Phil NIKKEL

    发明人： Dariusz BURAK ,  Jyrki KAITILA ,  Alexandre SHIRAKAWA ,  Martin Handtmann ,  Phil NIKKEL

    IPC分类号： H01L41/00

    CPC分类号： H03H9/173 ,  H03H9/585

    摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.

    摘要翻译： 在代表性的实施例中，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极，其中所述第一压电层的晶体的c轴取向基本上彼此对准; 设置在所述第二电极上的第二压电层; 非压电层; 以及设置在第二压电层上的第三电极。

    COUPLED RESONATOR FILTER COMPRISING A BRIDGE AND FRAME ELEMENTS
    5.
    发明申请
    COUPLED RESONATOR FILTER COMPRISING A BRIDGE AND FRAME ELEMENTS 有权
    包括桥梁和框架元件的联合共振器过滤器

    公开(公告)号：US20120218058A1

    公开(公告)日：2012-08-30

    申请号：US13167939

    申请日：2011-06-24

    申请人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Chris FENG ,  Phil NIKKEL ,  Stefan BADER

    发明人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Chris FENG ,  Phil NIKKEL ,  Stefan BADER

    IPC分类号： H03H9/54

    CPC分类号： H03H9/0211 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

    摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.

    摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。 内部凸起区域或外部凸起区域或两者均设置在第二上部电极上。

    Material systems for long wavelength lasers grown on GaSb or InAs substrates
    6.
    发明授权
    Material systems for long wavelength lasers grown on GaSb or InAs substrates 失效
    用于在GaSb或InAs衬底上生长的长波长激光器的材料系统

    公开(公告)号：US06813297B2

    公开(公告)日：2004-11-02

    申请号：US10196872

    申请日：2002-07-16

    申请人： Dariusz Burak

    发明人： Dariusz Burak

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/183 ,  H01S5/3235 ,  H01S5/34306

    摘要： A vertical cavity surface emitting laser (VCSEL) capable of producing long-wavelength light has a substrate of GaSb or InAs, and an active region with alternating quantum wells and barrier layers. The target wavelength range is preferably between 1.2-1.4 um. The quantum well is made of GaInSbP, GaInSbAs, AlInSbAs, or AlInSbP, and the barrier layers are made of AlInSbP, AlGaSbP, AlInSbAs, AlGaSbAs, or AlSbPAs. The active region is sandwiched between two mirror stacks that are preferably epitaxially grown Distributed Bragg Reflectors. The active region has large conduction and valence band offsets (&Dgr;Ec and &Dgr;Ev) for effective carrier containment over the wide range of ambient temperatures in which the VCSEL is expected to function. The active region can be designed to have little or no lattice strain on the substrate.

    摘要翻译： 能够产生长波长光的垂直腔表面发射激光器（VCSEL）具有GaSb或InAs的衬底和具有交替的量子阱和阻挡层的有源区。 目标波长范围优选在1.2-1.4μm之间。 量子阱由GaInSbP，GaInSbAs，AlInSbAs或AlInSbP制成，并且阻挡层由AlInSbP，AlGaSbP，AlInSbAs，AlGaSbAs或AlSbPAs制成。 有源区夹在优选外延生长的分布布拉格反射器的两个反射镜叠层之间。 有源区域在VCSEL预期起作用的宽范围的环境温度范围内具有大的传导和价带偏移（DeltaEc和DeltaEv），用于有效的载流子保持。 有源区可以被设计成在衬底上几乎没有或没有晶格应变。

    Coupled resonator filter comprising a bridge
    7.
    发明授权
    Coupled resonator filter comprising a bridge 有权
    耦合谐振滤波器包括桥

    公开(公告)号：US09154112B2

    公开(公告)日：2015-10-06

    申请号：US13036489

    申请日：2011-02-28

    申请人： Dariusz Burak

    发明人： Dariusz Burak

    IPC分类号： H03H9/58 ,  H03H9/02 ,  H03H9/13

    CPC分类号： H03H9/58 ,  H03H9/02086 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/584

    摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator.

    摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。

    Coupled resonator filter comprising a bridge and frame elements
    8.
    发明授权
    Coupled resonator filter comprising a bridge and frame elements 有权
    耦合谐振滤波器，包括桥接元件和框架元件

    公开(公告)号：US09148117B2

    公开(公告)日：2015-09-29

    申请号：US13167939

    申请日：2011-06-24

    申请人： Dariusz Burak ,  Alexandre Shirakawa ,  Chris Feng ,  Phil Nikkel ,  Stefan Bader

    发明人： Dariusz Burak ,  Alexandre Shirakawa ,  Chris Feng ,  Phil Nikkel ,  Stefan Bader

    IPC分类号： H03H9/54 ,  H03H9/02 ,  H03H3/04 ,  H03H9/13 ,  H03H9/58

    CPC分类号： H03H9/0211 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

    摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.

    摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。 内部凸起区域或外部凸起区域或两者均设置在第二上部电极上。

    Accoustic resonator having multiple lateral features
    10.
    发明授权
    Accoustic resonator having multiple lateral features 有权
    具有多个横向特征的声谐振器

    公开(公告)号：US08896395B2

    公开(公告)日：2014-11-25

    申请号：US13232334

    申请日：2011-09-14

    申请人： Dariusz Burak ,  Phil Nikkel ,  Chris Feng

    发明人： Dariusz Burak ,  Phil Nikkel ,  Chris Feng

    IPC分类号： H03H9/00 ,  H03H9/13 ,  H03H9/17 ,  H03H9/02 ,  H03H9/15

    CPC分类号： H03H9/132 ,  H03H9/02086 ,  H03H9/131 ,  H03H9/173

    摘要： A thin film bulk acoustic resonator (FBAR) includes a first electrode stacked on a substrate over a cavity, a piezoelectric layer stacked on the first electrode, and a second electrode stacked on the piezoelectric layer. Multiple lateral features are formed on a surface of the second electrode, the lateral features including multiple stepped structures.

    摘要翻译： 薄膜体声波谐振器（FBAR）包括堆叠在空腔上的衬底上的第一电极，堆叠在第一电极上的压电层和堆叠在压电层上的第二电极。 多个横向特征形成在第二电极的表面上，横向特征包括多个阶梯结构。