公开(公告)号：US4369247A

公开(公告)日：1983-01-18

申请号：US334163

申请日：1981-12-24

Applicant: David L. Goff ,  Edward L. Yuan ,  Stephen Proskow

Inventor： David L. Goff ,  Edward L. Yuan ,  Stephen Proskow

IPC: C08F290/14 ,  G03F7/037 ,  H01L21/312 ,  G03C5/00

CPC classification number: C08F290/145 ,  G03F7/037 ,  H01L21/312

Abstract: An improved process for forming relief structures on electrical devices such as capacitors, integrated circuits, printed circuits and semiconductors; a solution of a composition a polymeric heat resistant photopolymerizable composition of a polyamide ester resin containing photopolymerizable groups is applied to substrate such as a coated silicon wafer, which forms the base an electrical device, and is dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is converted to a polyimide structure having a sharp definition and good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition:a radiation sensitive polymerizable polyfunctional acrylate compound and a photopolymerization initiator of an aromatic biimidazole.

Abstract translation: 用于在诸如电容器，集成电路，印刷电路和半导体的电气装置上形成浮雕结构的改进方法; 将包含可光聚合基团的聚酰胺酯树脂的聚合物耐热可光聚合组合物的组合物溶液施加到基底上，例如形成基底的电子器件的被覆硅晶片，并干燥以形成膜，该膜暴露 通过图案辐射和光聚合; 将未曝光和未聚合的薄膜部分溶解掉，将得到的浮雕结构转变成具有清晰清晰度和良好机械，化学和电学性能的聚酰亚胺结构; 为了减少辐射暴露时间并增加光聚合速率，在组合物中使用以下成分：辐射敏感的可聚合多官能丙烯酸酯化合物和芳族联咪唑的光聚合引发剂。

公开(公告)号：US5063115A

公开(公告)日：1991-11-05

申请号：US538591

申请日：1990-06-15

Applicant: Burt T. Merriman, Jr. ,  David L. Goff

Inventor： Burt T. Merriman, Jr. ,  David L. Goff

IPC: C08K5/544 ,  C08L79/08 ,  H01B3/30

CPC classification number: H01B3/306 ,  C08K5/544 ,  C08L79/08 ,  Y10T428/31663

Abstract: A polyimide coating composition comprising an homogeneous liquid solution of (a) a polyimide or polyimide precursor, (b) a substituted silane compound and (c) aprotic solvent. The silane compound corresponds to the structure: ##STR1##

Abstract translation: 一种聚酰亚胺涂料组合物，其包含（a）聚酰亚胺或聚酰亚胺前体的均匀液体溶液，（b）取代的硅烷化合物和（c）非质子溶剂。 硅烷化合物对应于以下结构：

公开(公告)号：US4410612A

公开(公告)日：1983-10-18

申请号：US334166

申请日：1981-12-24

Applicant: David L. Goff ,  Edward L. Yuan ,  Stephen Proskow

Inventor： David L. Goff ,  Edward L. Yuan ,  Stephen Proskow

IPC: C08F290/14 ,  G03F7/037 ,  H01L21/312 ,  G03C5/00

CPC classification number: C08F290/145 ,  G03F7/037 ,  H01L21/312 ,  Y10S428/901

Abstract: An electrical device formed from a polymeric heat resistant photopolymerizable composition of a polyamide ester, resin containing photopolymerizable groups which forms a relief structures on electrical devices such as capacitors, integrated circuits, printed circuits, multilayer circuits or semiconductors; a solution of the composition is applied to a substrate such as a coated silicon wafer, dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is converted to a polyimide structure with sharp definition and has good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition: a radiation sensitive polymerizable polyfunctional acrylate compound and a photopolymerization initiator of an aromatic biimidazole.

Abstract translation: 由聚酰胺酯的聚合物耐热可光聚合组合物形成的电气装置，包含在诸如电容器，集成电路，印刷电路，多层电路或半导体的电气装置上形成浮雕结构的可光聚合基团的树脂; 将组合物的溶液施加到诸如涂覆的硅晶片的基材上，干燥以形成膜，通过图案将膜暴露于辐射并进行光聚合; 将未曝光和未聚合的薄膜部分溶解掉，得到的浮雕结构转变为具有清晰清晰度的聚酰亚胺结构，具有良好的机械，化学和电学性能; 为了减少辐射暴露时间并增加光聚合速率，在组合物中使用以下成分：辐射敏感的可聚合多官能丙烯酸酯化合物和芳族联咪唑的光聚合引发剂。

公开(公告)号：US07582585B2

公开(公告)日：2009-09-01

申请号：US11026179

申请日：2004-12-30

Applicant: Peter Trefonas, III ,  Sungseo Cho ,  David L. Goff ,  J. Ioan Matthews ,  Hao Yun

Inventor： Peter Trefonas, III ,  Sungseo Cho ,  David L. Goff ,  J. Ioan Matthews ,  Hao Yun

IPC: B01J21/18

CPC classification number: G03F7/091

Abstract: Coating compositions are provided that include a component that is a product of materials comprising an amine and an anhydride and/or an anhydride derivative. Compositions of the invention are particularly useful as an underlying antireflective coating composition (“ARC”) employed with an overcoated photoresist layer in the manufacture of microelectronic wafers and other electronic devices.

Abstract translation: 提供涂料组合物，其包括作为包含胺和酸酐和/或酸酐衍生物的材料的产物的组分。 本发明的组合物特别可用作在制造微电子晶片和其它电子器件时与外涂光致抗蚀剂层一起使用的底层抗反射涂料组合物（“ARC”）。

公开(公告)号：US4551522A

公开(公告)日：1985-11-05

申请号：US727809

申请日：1985-04-26

Applicant: Michael Fryd ,  David L. Goff

Inventor： Michael Fryd ,  David L. Goff

IPC: C07C233/75 ,  C07C67/00 ,  C07C231/00 ,  C07C231/02 ,  C07C231/12 ,  C08G73/00 ,  C08G73/10 ,  G03F7/038 ,  C08G73/12

CPC classification number: C08G73/1028 ,  C08G73/1025 ,  C08G73/1064 ,  C08G73/1067 ,  C08G73/1071 ,  C08G73/1085 ,  C08G73/1089 ,  G03F7/0387

Abstract: A process for the synthesis of the photosensitive polyamic acid derivatives which are polyimide precursors, comprising the sequential steps:(1) Partially derivatizing an aromatic dianhydride with a reactive monomer containing a photosensitive moiety;(2) Condensation polymerizing the partially derivatized aromatic dianhydride with aromatic diamine to form polyamic acid;(3) Isoimidization of the polyamic acid;(4) Condensation of the polyisoimide to polyamic acid derivative by reaction with additional reactive monomer; and(5) Separation of the polyamic acid derivative.

Abstract translation: 一种用于合成作为聚酰亚胺前体的光敏聚酰胺酸衍生物的方法，包括以下顺序步骤：（1）用含有感光部分的反应性单体部分衍生芳族二酐; （2）将部分衍生的芳族二酐与芳族二胺缩合形成聚酰胺酸; （3）聚酰胺酸的异亚胺化; （4）通过与另外的反应性单体反应，聚异酰亚胺与聚酰胺酸衍生物的缩合; 和（5）聚酰胺酸衍生物的分离。

公开(公告)号：US4454220A

公开(公告)日：1984-06-12

申请号：US427416

申请日：1982-09-29

Applicant: David L. Goff

Inventor： David L. Goff

IPC: C08F290/14 ,  C08G73/10 ,  C08L79/08 ,  G03F7/037 ,  G03C5/00

CPC classification number: C08F290/14 ,  C08G73/1039 ,  C08L79/08 ,  G03F7/037 ,  Y10S430/117 ,  Y10S430/12

Abstract: An electrical device coated with a polymerized polyimide structure resulting from a radiation-sensitive polyimide precursor composition which comprises a polymer of the formula ##STR1## wherein n is a positive integer corresponding to the number of units in the polymer and is sufficiently large to provide the polymer with a number average molecular weight of about 1500-15,000 as determined by vapor pressure osmometry, and wherein for any particular unit in the polymer:.fwdarw.denotes isomerism; R.sup.1 is a divalent aromatic, aliphatic or cycloaliphatic radical containing at least 2 carbon atoms; R.sup.2 and R.sup.3 are selected from the group consisting of a hydrogen radical and any organic radical containing a photopolymerizable olefinic double bond; and R.sup.4 and R.sup.5 are selected from the group consisting of perfluoro and perhalofluoro aliphatic hydrocarbons having 1 to 8 carbons.

Abstract translation: 涂覆有由辐射敏感的聚酰亚胺前体组合物产生的聚合的聚酰亚胺结构的电气装置，其包含下式的聚合物：其中n是对应于聚合物中的单元数目的正整数，并且足够大以提供 通过蒸气压渗透压测定的数均分子量为约1500-15,000的聚合物，并且其中对于聚合物中的任何特定单元： - >表示异构体; R1是含有至少2个碳原子的二价芳族，脂族或脂环族基团; R2和R3选自氢基团和含有可光聚合的烯属双键的任何有机基团; 并且R 4和R 5选自具有1至8个碳的全氟和全氟氟脂族烃。

公开(公告)号：US4430418A

公开(公告)日：1984-02-07

申请号：US430856

申请日：1982-09-30

Applicant: David L. Goff

Inventor： David L. Goff

IPC: C08F290/14 ,  C08G73/10 ,  C08L79/08 ,  G03F7/037 ,  G03C1/68

CPC classification number: G03F7/037 ,  C08F290/14 ,  C08G73/1039 ,  C08L79/08 ,  Y10S430/117 ,  Y10S430/12

Abstract: A radiation-sensitive polyimide precursor composition, comprising a polymer of the formula ##STR1## wherein n is a positive integer corresponding to the number of units in the polymer and is sufficiently large to provide the polymer with a number average molecular weight of about 1500-15,000 as determined by vapor pressure osmometry, and wherein for any particular unit in the polymer:.fwdarw.denotes isomerism;R.sup.1 is a tetravalent aromatic non-halogen containing organic radical containing at least one ring of six carbon atoms, said ring characterized by benzenoid unsaturation, the four carbonyl groups being attached directly to separate carbon atoms in a ring of the R.sup.1 radical;R.sup.2 and R.sup.3 are selected from the group consisting of a hydrogen radical and any organic radical containing a photopolymerizable olefinic double bond, at least one of R.sup.2 and R.sup.3 being said organic radical;R.sup.4 and R.sup.5 are selected from the group consisting of perfluoro and perhalofluoro aliphatic hydrocarbons having 1 to 8 carbons; and A and A' are selected from the group consisting of H, Cl, Br, and NO.sub.2.

Abstract translation: 一种辐射敏感的聚酰亚胺前体组合物，其包含下式的聚合物，其中n是对应于聚合物中单元数的正整数，并且足够大以提供数均分子量为约1500〜 通过蒸气压渗透测定法测定，其中对于聚合物中的任何特定单位： - >表示异构体; R1是含有至少一个具有6个碳原子的环的四价芳族不含卤素的有机基团，所述环的特征在于苯不饱和键，四个羰基直接连接在R1基团的环上分开的碳原子; R2和R3选自氢基团和含有可光聚合的烯属双键的任何有机基团，R 2和R 3中的至少一个是所述有机基团; R4和R5选自具有1至8个碳的全氟和全氟氟脂族烃; A和A'选自H，Cl，Br和NO 2。

公开(公告)号：US4414312A

公开(公告)日：1983-11-08

申请号：US334164

申请日：1981-12-24

Applicant: David L. Goff ,  Edward L. Yuan ,  Stephen Proskow

Inventor： David L. Goff ,  Edward L. Yuan ,  Stephen Proskow

IPC: C08F290/14 ,  G03F7/037 ,  H01L21/312 ,  G03C1/68

CPC classification number: H01L21/312 ,  C08F290/145 ,  G03F7/037

Abstract: A polymeric heat resistant photopolymerizable composition of a polyamide ester resin containing photopolymerizable groups useful for forming relief structures on electrical devices such as capacitors, integrated circuits, printed circuits and semiconductors; a solution of the composition is applied to a substrate such as a coated silicon wafer which is the base for an electrical device, dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is converted to a polyimide structure with sharp definition and has good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition:radiation sensitive polymerizable polyfunctional acrylate compound and photopolymerization initiators containing hydrogen donor initiator and aromatic biimidazole, and an oxygen scavenger.

Abstract translation: 含有用于在诸如电容器，集成电路，印刷电路和半导体的电气装置上形成浮雕结构的可光聚合基团的聚酰胺酯树脂的聚合物耐热可光聚合组合物; 将组合物的溶液施加到诸如作为电气装置的基底的涂覆硅晶片的基板上，干燥以形成膜，通过图案将膜暴露于辐射并进行光聚合; 将未曝光和未聚合的薄膜部分溶解掉，得到的浮雕结构转变为具有清晰清晰度的聚酰亚胺结构，具有良好的机械，化学和电学性能; 为了减少辐射暴露时间并增加光聚合速率，组合物中使用以下组分：辐射敏感的可聚合多官能丙烯酸酯化合物和含氢供体引发剂和芳族联咪唑的光聚合引发剂和除氧剂。

公开(公告)号：US4416973A

公开(公告)日：1983-11-22

申请号：US427415

申请日：1982-09-29

Applicant: David L. Goff

Inventor： David L. Goff

IPC: C08F290/14 ,  C08G73/10 ,  C08L79/08 ,  G03F7/037 ,  G03C1/68

CPC classification number: G03F7/037 ,  C08F290/14 ,  C08G73/1039 ,  C08L79/08 ,  Y10S430/117 ,  Y10S430/12

Abstract: A radiation-sensitive polyimide precursor composition comprises a polymer of the formula ##STR1## wherein n is a positive integer corresponding to the number of units in the polymer and is sufficiently large to provide the polymer with a number average molecular weight of about 1500-15,000 as determined by vapor pressure osmometry, and wherein for any particular unit in the polymer:.fwdarw.denotes isomerism; R.sup.1 is a divalent aromatic, aliphatic or cycloaliphatic radical containing at least 2 carbon atoms; R.sup.2 and R.sup.3 are selected from the group consisting of a hydrogen radical and any organic radical containing a photopolymerizable olefinic double bond; and R.sup.4 and R.sup.5 are selected from the group consisting of perfluoro and perhalofluoro aliphatic hydrocarbons having 1 to 8 carbons.

Abstract translation: 辐射敏感的聚酰亚胺前体组合物包含下式的聚合物，其中n是对应于聚合物中单元数的正整数，并且足够大以提供具有约1500-15,000的数均分子量的聚合物 如通过蒸气压渗透压测定法确定的，并且其中对于聚合物中的任何特定单元： - >表示异构体; R1是含有至少2个碳原子的二价芳族，脂族或脂环族基团; R2和R3选自氢基团和含有可光聚合的烯属双键的任何有机基团; 并且R 4和R 5选自具有1至8个碳的全氟和全氟氟脂族烃。

公开(公告)号：US4329419A

公开(公告)日：1982-05-11

申请号：US183648

申请日：1980-09-03

Applicant: David L. Goff ,  Edward L. Yuan ,  Stephen Proskow

Inventor： David L. Goff ,  Edward L. Yuan ,  Stephen Proskow

IPC: C08F2/00 ,  C08F2/50 ,  C08F2/54 ,  C08F290/00 ,  C08F290/14 ,  C08F299/00 ,  C08F299/02 ,  C08K5/10 ,  C08K5/3447 ,  C09D4/00 ,  C09D155/00 ,  C09D179/08 ,  G03C5/00 ,  G03F7/004 ,  G03F7/037 ,  G03F7/038 ,  H01B3/30 ,  H01L21/027 ,  H01L21/312 ,  G03C1/68

CPC classification number: H01L21/312 ,  C08F290/145 ,  G03F7/037

Abstract: A polymeric heat resistant photopolymerizable composition of a polyamide ester resin containing photopolymerizable groups useful for forming relief structures on electrical devices such as capacitors, integrated circuits and semiconductors; a solution of the composition is applied to a substrate such as a coated silicon wafer which forms an electrical device, dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is baked to form a polyimide structure with sharp definition and has good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition:a radiation sensitive polymerizable polyfunctional acrylate compound and a photopolymerization initiator of an aromatic biimidazole.

Abstract translation: 含有可用于在诸如电容器，集成电路和半导体的电气装置上形成浮雕结构的可光聚合基团的聚酰胺酯树脂的聚合物耐热可光聚合组合物; 将组合物的溶液施加到形成电子装置的基底如涂覆的硅晶片上，干燥以形成膜，通过图案将膜暴露于辐射并进行光聚合; 将未曝光和未聚合的部分的膜溶解掉，并将所得到的浮雕结构烘烤以形成具有清晰清晰度的具有良好机械，化学和电学性能的聚酰亚胺结构; 为了减少辐射暴露时间并增加光聚合速率，在组合物中使用以下成分：辐射敏感的可聚合多官能丙烯酸酯化合物和芳族联咪唑的光聚合引发剂。