公开(公告)号：US08969122B2

公开(公告)日：2015-03-03

申请号：US13159897

申请日：2011-06-14

申请人： Kathryn C. Fisher ,  Qiang Huang ,  Satyavolu S. Papa Rao ,  David L. Rath

发明人： Kathryn C. Fisher ,  Qiang Huang ,  Satyavolu S. Papa Rao ,  David L. Rath

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L31/0224

CPC分类号： H01L31/02168 ,  H01L31/0201 ,  H01L31/0216 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/50

摘要： Processes for fabricating photovoltaic devices in which the front side contact metal semiconductor alloy metallization patterns have a uniform thickness at edge portions as well as a central portion of each metallization pattern are provided. In one embodiment, a method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate; forming a plurality of patterned antireflective coating layers on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger regions; forming a mask atop the plurality of patterned antireflective coating layers, the mask having a shape that mimics each patterned antireflective coating; electrodepositing a metal layer on the busbar region and the finger regions; removing the mask; and performing an anneal, wherein during the anneal metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy.

摘要翻译： 提供了其中前侧接触金属半导体合金金属化图案在边缘部分具有均匀厚度以及每个金属化图案的中心部分的光伏器件的制造方法。 在一个实施例中，提供了一种形成光伏器件的方法，该方法包括：pn结与p型半导体部分和n型半导体部分之间，其中一个半导体部分的上部暴露表面 表示半导体衬底的前侧表面; 在所述半导体表面的前侧表面上形成多个图案化的抗反射涂层，以提供包括汇流条区域和手指区域的网格图案; 在所述多个图案化的抗反射涂层之上形成掩模，所述掩模具有模仿每个图案化抗反射涂层的形状; 在母线区域和手指区域上电沉积金属层; 去除面膜; 并执行退火，其中在退火期间，来自金属层的金属原子与母线区域的半导体原子和形成金属半导体合金的指状区域反应。

公开(公告)号：US08835326B2

公开(公告)日：2014-09-16

申请号：US13343190

申请日：2012-01-04

申请人： John A. Fitzsimmons ,  Shyng-Tsong Chen ,  David L. Rath ,  Muthumanickam Sankarapandian ,  Oscar van der Straten

发明人： John A. Fitzsimmons ,  Shyng-Tsong Chen ,  David L. Rath ,  Muthumanickam Sankarapandian ,  Oscar van der Straten

IPC分类号： H01L21/3065 ,  H01L21/3213 ,  H01L21/02

CPC分类号： C09K13/00 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76804

摘要： A chemical solution that removes undesired metal hard mask yet remains selective to the device wiring metallurgy and dielectric materials. The present invention decreases aspect ratio by selective removal of the metal hard mask before the metallization of the receiving structures without adverse damage to any existing metal or dielectric materials required to define the semiconductor device, e.g. copper metallurgy or device dielectric. Thus, an improved aspect ratio for metal fill without introducing any excessive trapezoidal cross-sectional character to the defined metal receiving structures of the device will result.

摘要翻译： 一种去除不需要的金属硬掩模的化学溶液，但仍然对器件布线冶金和电介质材料具有选择性。 本发明通过在接收结构金属化之前选择性去除金属硬掩模而不损害限定半导体器件所需的任何现有金属或介电材料，从而降低纵横比，例如， 铜冶金或器件电介质。 因此，将导致金属填充物的改进的纵横比，而不会对设备的限定的金属接收结构引入任何过大的梯形横截面特征。

公开(公告)号：US20130307139A1

公开(公告)日：2013-11-21

申请号：US13443418

申请日：2012-04-10

申请人： Kuan-Neng Chen ,  Bruce K. Furman ,  Sampath Purushothaman ,  David L. Rath ,  Anna W. Topol ,  Cornelia K. Tsang

发明人： Kuan-Neng Chen ,  Bruce K. Furman ,  Sampath Purushothaman ,  David L. Rath ,  Anna W. Topol ,  Cornelia K. Tsang

IPC分类号： H01L23/00

CPC分类号： H01L24/05 ,  B23K20/023 ,  B23K20/233 ,  B23K20/24 ,  B23K2101/42 ,  H01L24/03 ,  H01L24/08 ,  H01L24/12 ,  H01L24/80 ,  H01L2224/0381 ,  H01L2224/03845 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/08147 ,  H01L2224/08148 ,  H01L2224/80203 ,  H01L2224/80345 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80948 ,  H01L2224/80986 ,  H01L2924/14 ,  H01L2924/1461 ,  Y10T428/24479 ,  Y10T428/24521 ,  Y10T428/24545 ,  Y10T428/24612 ,  Y10T428/31678 ,  H01L2924/00012 ,  H01L2924/0001 ,  H01L2924/00

摘要： Bonding of substrates including metal-dielectric patterns on a surface with the metal raised above the dielectric, as well as related structures, are disclosed. One method includes providing a first substrate having a metal-dielectric pattern on a surface thereof; providing a second substrate having a metal-dielectric pattern on a surface thereof; performing a process resulting in the metal being raised above the dielectric; cleaning the metal; and bonding the first substrate to the second substrate. A related structure is also disclosed. The bonding of raised metal provides a strong bonding medium, and good electrical and thermal connections enabling creation of three dimensional integrated structures with enhanced functionality.

摘要翻译： 公开了包括金属电介质图案在表面上与在电介质上方凸起的金属以及相关结构的接合。 一种方法包括在其表面上提供具有金属 - 电介质图案的第一基板; 提供在其表面上具有金属 - 电介质图案的第二基板; 执行导致金属在电介质上方升高的过程; 清洗金属; 以及将所述第一基板接合到所述第二基板。 还公开了相关的结构。 凸起金属的结合提供了强大的粘合介质，以及良好的电气和热连接，能够创建具有增强功能的三维集成结构。

公开(公告)号：US08298948B2

公开(公告)日：2012-10-30

申请号：US12613551

申请日：2009-11-06

申请人： Griselda Bonilla ,  Kaushik Chanda ,  Ronald G. Filippi ,  Stephan Grunow ,  David L. Rath ,  Sujatha Sankaran ,  Andrew H. Simon ,  Theodorus Eduardus Standaert ,  Chih-Chao Yang

发明人： Griselda Bonilla ,  Kaushik Chanda ,  Ronald G. Filippi ,  Stephan Grunow ,  David L. Rath ,  Sujatha Sankaran ,  Andrew H. Simon ,  Theodorus Eduardus Standaert ,  Chih-Chao Yang

IPC分类号： H01L21/44 ,  H01L21/302

CPC分类号： H01L23/53238 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76865 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for capping lines includes forming a metal film layer on a copper line by a selective deposition process, the copper line disposed in a dielectric substrate, wherein the depositing also results in the deposition of stray metal material on the surface of the dielectric substrate, and etching with an isotropic etching process to remove a portion of the metal film layer and the stray metal material on the surface of the dielectric substrate, wherein the metal film layer is deposited at an initial thickness sufficient to leave a metal film layer cap remaining on the copper line following the removal of the stray metal material.

摘要翻译： 一种封盖线的方法包括通过选择性沉积工艺在铜线上形成金属膜层，铜线设置在电介质基底中，其中沉积还导致杂散金属材料沉积在介质基片的表面上， 并用各向同性蚀刻工艺进行蚀刻以除去电介质基底表面上的金属膜层和杂散金属材料的一部分，其中金属膜层以足以使金属膜层盖保持在其上的初始厚度沉积 铜线除去杂散金属材料。

公开(公告)号：US07993816B2

公开(公告)日：2011-08-09

申请号：US12049780

申请日：2008-03-17

申请人： Charles T. Black ,  Matthew E. Colburn ,  David L. Rath

发明人： Charles T. Black ,  Matthew E. Colburn ,  David L. Rath

IPC分类号： G03F7/26

CPC分类号： G03F7/039 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

摘要： In one embodiment, the present invention provides a method for patterning a surface that includes forming a block copolymer atop a heterogeneous reflectivity surface, wherein the block copolymer is segregated into first and second units; applying a radiation to the first units and second units, wherein the heterogeneous reflectivity surface produces an exposed portion of the first units and the second units; and applying a development cycle to selectively remove at least one of the exposed first and second units of the segregated copolymer film to provide a pattern.

摘要翻译： 在一个实施方案中，本发明提供了一种用于图案化表面的方法，其包括在异质反射表面之上形成嵌段共聚物，其中嵌段共聚物分离成第一和第二单元; 对所述第一单元和第二单元施加辐射，其中所述异质反射表面产生所述第一单元和所述第二单元的暴露部分; 并且施加开发周期以选择性地去除所述分离的共聚物膜的暴露的第一和第二单元中的至少一个以提供图案。

公开(公告)号：US20090140428A1

公开(公告)日：2009-06-04

申请号：US11949189

申请日：2007-12-03

申请人： Griselda Bonilla ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Takeshi Nogami ,  Shom Ponoth ,  David L. Rath ,  Chih-Chao Yang

发明人： Griselda Bonilla ,  Daniel C. Edelstein ,  Satyanarayana V. Nitta ,  Takeshi Nogami ,  Shom Ponoth ,  David L. Rath ,  Chih-Chao Yang

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L23/5222 ,  H01L21/31144 ,  H01L21/7682 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A hard mask is formed on an interconnect structure comprising a low-k material layer and a metal feature embedded therein. A block polymer is applied to the hard mask layer, self-assembled, and patterned to form a polymeric matrix of a polymeric block component and containing cylindrical holes. The hard mask and the low-k material layer therebelow are etched to form cavities. A conductive material is plated on exposed metallic surfaces including portions of top surfaces of the metal feature to form metal pads. Metal silicide pads are formed by exposure of the metal pads to a silicon containing gas. An etch is performed to enlarge and merge the cavities in the low-k material layer. The metal feature is protected from the etch by the metal silicide pads. An interconnect structure having an air gap and free of defects to surfaces of the metal feature is formed.

摘要翻译： 在包括低k材料层和嵌入其中的金属特征的互连结构上形成硬掩模。 将嵌段聚合物施加到硬掩模层上，自组装和图案化以形成聚合物嵌段组分的聚合物基质并且包含圆柱形孔。 蚀刻硬掩模和低k材料层以形成空腔。 导电材料镀在暴露的金属表面上，包括金属特征的顶表面的部分以形成金属垫。 金属硅化物焊盘通过将金属焊盘暴露于含硅气体而形成。 进行蚀刻以放大和合并低k材料层中的空腔。 通过金属硅化物焊盘防止金属特征被蚀刻。 形成具有空隙并且没有金属特征表面的缺陷的互连结构。

公开(公告)号：US6150282A

公开(公告)日：2000-11-21

申请号：US969593

申请日：1997-11-13

申请人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

发明人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

IPC分类号： H01L21/306 ,  H01L21/768 ,  H01L21/302

CPC分类号： H01L21/02063 ,  H01L21/76814 ,  Y10S438/906

摘要： Etching residue is selectively removed employing a substantially non-aqueous composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include an anhydride.

摘要翻译： 使用含有含氟化合物和某些有机溶剂的基本上非水性组合物选择性地除去蚀刻残渣。 优选的组合物还包括酸酐。

公开(公告)号：US6117796A

公开(公告)日：2000-09-12

申请号：US133424

申请日：1998-08-13

申请人： Glenn W. Gale ,  Rangarajan Jagannathan ,  Karen P. Madden ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Keith R. Pope ,  David L. Rath

发明人： Glenn W. Gale ,  Rangarajan Jagannathan ,  Karen P. Madden ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Keith R. Pope ,  David L. Rath

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31111

摘要： Silicon oxide is removed from an article employing a liquid composition containing a fluoride-containing compound, organic solvent, and water. The methods of the invention are especially useful for removal of silicon oxide formed by thermal oxidation of a silicon substrate.

摘要翻译： 使用含有含氟化合物，有机溶剂和水的液体组合物从制品中除去氧化硅。 本发明的方法对于去除通过硅衬底的热氧化形成的氧化硅是特别有用的。

公开(公告)号：US6033996A

公开(公告)日：2000-03-07

申请号：US969595

申请日：1997-11-13

申请人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

发明人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

IPC分类号： H01L21/02 ,  H01L21/3213 ,  H01L21/302

CPC分类号： H01L21/02071 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/963

摘要： Etching residue, etching mask and silicon nitride and/or silicon dioxide are etched or removed employing a composition containing a fluoride containing compound, water and certain organic solvents.

摘要翻译： 使用含有含氟化合物，水和某些有机溶剂的组合物蚀刻或去除蚀刻残留物，蚀刻掩模和氮化硅和/或二氧化硅。

公开(公告)号：US5800626A

公开(公告)日：1998-09-01

申请号：US801685

申请日：1997-02-18

申请人： Susan Cohen ,  Emmanuel I. Cooper ,  Klaus Penner ,  David L. Rath ,  Kamalesh K. Srivastava

发明人： Susan Cohen ,  Emmanuel I. Cooper ,  Klaus Penner ,  David L. Rath ,  Kamalesh K. Srivastava

IPC分类号： H01L21/304 ,  B08B3/12 ,  H01L21/00 ,  B08B3/10

CPC分类号： H01L21/67017 ,  B08B3/12 ,  B08B2203/002

摘要： An efficient cleaning process of microelectronics devices requires lower levels of megasonic power, lower temperature and much lower concentrations of chemicals. The method controls the effectiveness of megasonics-assisted cleaning of microelectronics devices by securing a gas concentration level in the cleaning solution, such that at the process temperature the solution is partially saturated with the gas. The gas concentration can be controlled either at the plant-wide level or, preferably, at the point of use. In the latter case, two water supply inputs are provided, one of vacuum-degassed water and the other of gas-saturated water. Process water in the desired gas concentration is then obtained by mixing water from the two sources in an appropriate ratio, which resulting mixture is fed to the wafer cleaning vessel.

摘要翻译： 微电子器件的有效清洁过程需要较低水平的兆声波功率，较低的温度和更低浓度的化学品。 该方法通过确保清洁溶液中的气体浓度水平来控制微电子器件的兆声波辅助清洁的有效性，使得在处理温度下溶液被气体部分饱和。 气体浓度可以在整个工厂范围内进行，也可以优选地在使用时进行控制。 在后一种情况下，提供两个供水输入，一个是真空脱气的水，另一个是气体饱和的水。 然后通过以适当的比例混合来自两个源的水来获得所需气体浓度的处理水，将所得混合物送入晶片清洗容器。