公开(公告)号：US6037273A

公开(公告)日：2000-03-14

申请号：US33391

申请日：1998-03-02

申请人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

发明人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

IPC分类号： C01B13/32 ,  H01L21/316 ,  H01L21/02

CPC分类号： H01L21/02238 ,  C01B13/322 ,  H01L21/02255 ,  H01L21/3165 ,  H01L21/31662

摘要： A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.

公开(公告)号：US6159866A

公开(公告)日：2000-12-12

申请号：US507946

申请日：2000-02-22

申请人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

发明人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

IPC分类号： C01B13/32 ,  H01L21/316 ,  H01L21/31

CPC分类号： C01B13/322 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/3165 ,  H01L21/31662

摘要： A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.

摘要翻译： 在基板上形成氧化物的方法。 根据本发明的方法，将基板放置在室中。 然后将含氧气体和含氢气体进料到室中。 然后使含氧气体和含氢气体彼此反应以在室中形成水蒸气。 然后水蒸汽氧化底物。

公开(公告)号：US06410456B1

公开(公告)日：2002-06-25

申请号：US09718443

申请日：2000-11-21

申请人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

发明人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

IPC分类号： C23C16455

CPC分类号： C01B13/322 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/3165 ,  H01L21/31662

摘要： A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.

公开(公告)号：US6114258A

公开(公告)日：2000-09-05

申请号：US175144

申请日：1998-10-19

申请人： Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Sathees Kuppurao

发明人： Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Sathees Kuppurao

IPC分类号： H01L21/31 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/8238 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/0223 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L29/518 ,  H01L29/513

摘要： A system and method of forming an oxide in the presence of a nitrogen-containing material. A substrate having a nitrogen-containing material on a surface is placed in a reaction chamber. An oxygen-containing gas, or an oxygen-containing gas and a hydrogen-containing gas are provided to the chamber and reacted in the chamber. The reactive gases are used to oxidize the surface of the substrate and displace the nitrogen-containing material from the interface.

摘要翻译： 在含氮材料存在下形成氧化物的体系和方法。 在表面上具有含氮材料的基板放置在反应室中。 将含氧气体或含氧气体和含氢气体设置到室中并在室中反应。 反应气体用于氧化基材的表面，并从界面置换含氮材料。

公开(公告)号：US06534401B2

公开(公告)日：2003-03-18

申请号：US09561195

申请日：2000-04-27

申请人： Hyun Sung Joo ,  David R. Lopes

发明人： Hyun Sung Joo ,  David R. Lopes

IPC分类号： H01L2144

CPC分类号： H01L21/32105 ,  H01L21/28061 ,  H01L21/28247 ,  H01L21/31683

摘要： A method of selectively oxidizing a composite film. According to the present invention a substrate of having a composite film comprising of lower silicon film, a barrier layer, and upper metal film on the barrier layer is placed into a reaction chamber. An inert gas is then fed into reaction chamber to create an inert ambient in the reaction chamber. The temperature of the substrate is then raised or ramped from first temperature to a second temperature in the inert ambient. After the temperature of the substrate is raised to the second temperature the substrate is exposed to an ambient which oxidizes the silicon but which does not oxidize the metal.