-
1.发明申请Defect identification system and method for repairing killer defects in semiconductor devices 审中-公开缺陷识别系统和修复半导体器件杀伤性缺陷的方法公开(公告)号：US20050255611A1
公开(公告)日：2005-11-17
申请号：US10911142
申请日：2004-08-04
IPC分类号： G01R31/26 , G01R31/28 , H01L21/66 , H01L21/768
CPC分类号： H01L22/20 , G01R31/2894 , H01L21/76892
摘要： A method for improving semiconductor yield by in-line repair of defects during manufacturing comprises inspecting dies on a wafer after a selected layer is formed on the dies, identifying defects in each of the dies, classifying the identified defects as killer or non-critical, for each killer defect determining an action to correct the defect, repairing the defect and returning the wafer to a next process step. Also disclosed is a method for determining an efficient repair process by dividing the die into a grid and using analysis of the grid to find a least invasive repair.
摘要翻译： 通过在制造过程中对缺陷的在线修复来提高半导体产量的方法包括：在模具上形成所选择的层之后检查晶片上的管芯，识别每个管芯中的缺陷，将所识别的缺陷分类为杀伤或非关键的， 对于每个杀手缺陷，确定纠正缺陷的动作，修复缺陷并将晶片返回到下一个处理步骤。 还公开了一种通过将模具分成网格并利用网格分析来找到最小侵入性修复来确定有效修复过程的方法。
-
2.发明申请Semiconductor device contamination reduction in a fluorinated oxide deposition process 审中-公开氟化氧化物沉积工艺中的半导体器件污染减少公开(公告)号：US20050191863A1
公开(公告)日：2005-09-01
申请号：US11039354
申请日：2005-01-20
IPC分类号： C23C16/42 , B05D1/36 , B05D7/00 , C23C14/10 , C23C16/44 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/469 , H01L21/4763 , H01L21/768
CPC分类号： C23C16/4401 , C23C16/4404 , H01L21/02131 , H01L21/02274 , H01L21/31629 , H01L21/76801
摘要： A method for improving throughput in a semiconductor wafer deposition process in a high density plasma chamber includes processing a first wafer in the high density plasma chamber using a process that includes high power sufficient to burn fluorosilicate glass residue in the chamber. The method further includes removing the first wafer and processing additional wafers using the same process without cleaning the chamber between wafers.
摘要翻译： 一种用于提高高密度等离子体室中的半导体晶片沉积工艺中的生产量的方法包括使用包括足以在室中燃烧氟硅酸盐玻璃残余物的高功率的工艺来处理高密度等离子体室中的第一晶片。 该方法还包括移除第一晶片并使用相同的工艺处理附加晶片，而不在晶片之间清洁腔室。
-
3.发明申请Defect identification system and method for repairing killer defects in semiconductor devices 失效缺陷识别系统和修复半导体器件杀伤性缺陷的方法公开(公告)号：US20070010032A1
公开(公告)日：2007-01-11
申请号：US11519614
申请日：2006-09-12
IPC分类号： H01L21/00
CPC分类号： H01L22/20 , G01R31/2894 , H01L21/76892
摘要： A method for improving semiconductor yield by in-line repair of defects during manufacturing comprises inspecting dies on a wafer after a selected layer is formed on the dies, identifying defects in each of the dies, classifying the identified defects as killer or non-critical, for each killer defect determining an action to correct the defect, repairing the defect and returning the wafer to a next process step. Also disclosed is a method for determining an efficient repair process by dividing the die into a grid and using analysis of the grid to find a least invasive repair.
摘要翻译： 通过在制造过程中对缺陷的在线修复来提高半导体产量的方法包括：在模具上形成所选择的层之后检查晶片上的管芯，识别每个管芯中的缺陷，将所识别的缺陷分类为杀伤或非关键的， 对于每个杀手缺陷，确定纠正缺陷的动作，修复缺陷并将晶片返回到下一个处理步骤。 还公开了一种通过将模具分成网格并利用网格分析来找到最小侵入性修复来确定有效修复过程的方法。
-
-
搜索结果
3 条记录 (耗时 0.009 秒)