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    High-Efficiency Thin-Film Solar Cells
    4.
    发明申请
    High-Efficiency Thin-Film Solar Cells 审中-公开
    高效薄膜太阳能电池

    公开(公告)号：US20130284255A1

    公开(公告)日：2013-10-31

    申请号：US13657745

    申请日：2012-10-22

    申请人： David Xuan-Qi Wang ,  Mehrdad M. Moslehi

    发明人： David Xuan-Qi Wang ,  Mehrdad M. Moslehi

    IPC分类号： H01L31/0236

    CPC分类号： H01L31/0236 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0657 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1092

    摘要： A three-dimensional solar cell comprising a semiconductor substrate with an inverted pyramidal cavity, emitter metallization regions on ridges on the surface of the semiconductor substrate which define an opening of the inverted pyramidal cavity, and base metallization regions on a region which form the apex of the inverted pyramidal cavity. A method for fabricating a three-dimensional thin-film solar cell from an inverted pyramidal three-dimensional thin-film silicon substrate by doping ridges on the surface of the semiconductor substrate which define an opening of an inverted pyramidal cavity on the substrate to form an emitter region, and doping a region which forms the apex of the inverted pyramidal cavity to form a base region. Adding a surface passivation layer to the surface of the substrate. Selectively etching the passivation layer from the emitter region and base region. Then concurrently metallizing the emitter region and base region.

    摘要翻译： 一种三维太阳能电池，包括具有反锥体腔的半导体衬底，在半导体衬底的表面上的脊上的发射极金属化区域，其限定了倒锥形腔的开口，以及在形成顶角的区域上的基底金属化区域 倒锥体腔。 一种通过在半导体衬底的表面上掺杂脊来限定反向锥形三维薄膜硅衬底的三维薄膜太阳能电池的方法，该衬底限定了衬底上的反锥体腔的开口以形成 并且掺杂形成倒锥体腔的顶点的区域以形成基区。 将表面钝化层添加到基材的表面。 从发射极区域和基极区域选择性地蚀刻钝化层。 然后同时金属化发射极区域和基极区域。

    Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing
    5.
    发明授权
    Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing 有权
    具有通孔的三维薄膜半导体衬底及制造方法

    公开(公告)号：US08551866B2

    公开(公告)日：2013-10-08

    申请号：US12791842

    申请日：2010-06-01

    申请人： Mehrdad M. Moslehi ,  David Xuan-Qi Wang

    发明人： Mehrdad M. Moslehi ,  David Xuan-Qi Wang

    IPC分类号： H01L31/0352 ,  H01L31/18

    CPC分类号： H01L31/0352 ,  H01L21/00 ,  H01L27/142 ,  H01L31/022458 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0468 ,  H01L31/054 ,  H01L31/056 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for the fabrication of a three-dimensional thin-film semiconductor substrate with selective through-holes is provided. A porous semiconductor layer is conformally formed on a semiconductor template comprising a plurality of three-dimensional inverted pyramidal surface features defined by top surface areas aligned along a (100) crystallographic orientation plane of the semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls aligned along the (111) crystallographic orientation plane of the semiconductor template. An epitaxial semiconductor layer is conformally formed on the porous semiconductor layer. The epitaxial semiconductor layer is released from the semiconductor template. Through-holes are selectively formed in the epitaxial semiconductor layer with openings between the front and back lateral surface planes of the epitaxial semiconductor layer to form a partially transparent three-dimensional thin-film semiconductor substrate.

    摘要翻译： 提供了一种制造具有选择性通孔的三维薄膜半导体衬底的方法。 多孔半导体层保形地形成在半导体模板上，该半导体模板包括由半导体模板的（100）晶体取向平面对准的顶表面区域和由侧壁限定的多个反向锥体腔限定的多个三维倒锥体表面特征 沿着半导体模板的（111）晶体取向平面排列。 在多孔半导体层上共形形成外延半导体层。 外延半导体层从半导体模板释放。 在外延半导体层中选择性地形成通孔，该外延半导体层在外延半导体层的正面和背面侧面之间具有开口，形成部分透明的三维薄膜半导体衬底。

    METHOD FOR RELEASING A THIN SEMICONDUCTOR SUBSTRATE FROM A REUSABLE TEMPLATE
    6.
    发明申请
    METHOD FOR RELEASING A THIN SEMICONDUCTOR SUBSTRATE FROM A REUSABLE TEMPLATE 有权
    从可重复使用的模板中释放薄的半导体衬底的方法

    公开(公告)号：US20120272490A1

    公开(公告)日：2012-11-01

    申请号：US13463757

    申请日：2012-05-03

    申请人： Mehrdad M. Moslehi ,  David Xuan-Qi Wang ,  Sam Tone Tor ,  Karl-Josef Kramer

    发明人： Mehrdad M. Moslehi ,  David Xuan-Qi Wang ,  Sam Tone Tor ,  Karl-Josef Kramer

    IPC分类号： H01L21/46

    CPC分类号： H01L31/18 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6838 ,  H01L21/76259 ,  H01L2924/19042 ,  Y10T29/53683 ,  Y10T279/11

    摘要： The present disclosure relates to methods and apparatuses for releasing a thin semiconductor substrate from a reusable template. The method involves forming a mechanically weak layer conformally on a semiconductor template. Then forming a thin semiconductor substrate conformally on the mechanically weak layer. The thin semiconductor substrate, the mechanically weak layer and the template forming a wafer. Then defining the border of the thin-film semiconductor substrate to be released by exposing the peripheral of the mechanically weak layer. Then releasing the thin-film semiconductor substrate by applying a controlled air flow parallel to said mechanically weak layer wherein the controlled air flow separates the thin semiconductor substrate and template according to lifting forces.

    摘要翻译： 本公开涉及用于从可重用模板中释放薄半导体衬底的方法和装置。 该方法包括在半导体模板上共形形成机械弱层。 然后在机械弱层上共形成薄的半导体衬底。 薄半导体衬底，机械弱层和模板形成晶片。 然后通过暴露机械薄弱层的周边来限定待释放的薄膜半导体衬底的边界。 然后通过施加平行于所述机械弱层的受控空气流来释放薄膜半导体衬底，其中受控空气流根据提升力分离薄半导体衬底和模板。

    SUBSTRATE RELEASE METHODS AND APPARATUSES
    10.
    发明申请
    SUBSTRATE RELEASE METHODS AND APPARATUSES 有权
    基板释放方法和装置

    公开(公告)号：US20100022074A1

    公开(公告)日：2010-01-28

    申请号：US12473811

    申请日：2009-05-28

    申请人： David Xuan-Qi Wang ,  Mehrdad M. Moslehi

    发明人： David Xuan-Qi Wang ,  Mehrdad M. Moslehi

    IPC分类号： H01L21/762 ,  H01L21/20

    CPC分类号： H01L31/18 ,  H01L21/76259

    摘要： The present disclosure relates to methods and apparatuses for fracturing or breaking a buried porous semiconductor layer to separate a 3-D thin-film semiconductor semiconductor (TFSS) substrate from a 3-D crystalline semiconductor template. The method involves forming a sacrificial porous semiconductor layer on the 3-D features of the template. A variety of techniques may be used to fracture and release the mechanically weak porous semiconductor layer without damaging the TFSS substrate layer or the template layer such as pressure variations, thermal stress generation, and mechanical bending. The methods also allow for processing three dimensional features not possible with current separation processes. Optional cleaning and final lift-off steps may be performed as part of the release step or after the release step.

    摘要翻译： 本公开内容涉及用于将埋入的多孔半导体层断裂或断裂以从3-D晶体半导体模板分离3-D薄膜半导体（TFSS）衬底的方法和装置。 该方法包括在模板的3-D特征上形成牺牲多孔半导体层。 可以使用各种技术来破坏和释放机械上的弱多孔半导体层，而不会损坏TFSS衬底层或模板层，例如压力变化，热应力产生和机械弯曲。 这些方法还允许处理当前分离过程不可能的三维特征。 可以在释放步骤的一部分或释放步骤之后执行可选的清洁和最终剥离步骤。