摘要:
The wafer arrangement (100) provided comprises a first wafer (101), which comprises an integrated circuit and a recess (105). The wafer arrangement further comprises a portion of a second wafer (103), which comprises a carrier portion and a protrusion (107), the protrusion comprising an active component or actively controlled component (109) such as a MEMS component, wherein the portion of the second wafer (103) is coupled to the first wafer (101) such that the protrusion (107) is received in the recess (105). The invention provides a mechanism for accurately aligning an active component (109) on the second wafer (103) with components on the first wafer (101), such as photonic, electronic or optical components.
摘要:
A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.
摘要:
An integrated circuit and a method of making a transistor thereof are provided. In one aspect, the method includes the steps of forming a gate dielectric layer on the substrate and forming a gate electrode on the gate dielectric layer with a lower surface, a midpoint, and a quantity of p-type impurity. A quantity of nitrogen is introduced into the gate electrode whereby the quantity nitrogen has a peak concentration proximate the lower surface. A quantity of germanium is introduced into the gate electrode and first and second source/drain regions are formed in the substrate. The method enables simultaneous formation of n-channel and p-channel gate electrodes with work functions tailored for both types of devices.
摘要:
A method for fabricating an integrated circuit is presented wherein a trench is patterned in a field region of a semiconductor substrate. The trench is defined within the semiconductor substrate by a trench floor and trench sidewalls. A liner that primarily comprises nitride is formed upon the trench floor and sidewalls. The liner is then oxidized. A trench dielectric may be formed within the trench and planarized to complete the isolation structure.
摘要:
An integrated circuit and a method of making a transistor thereof are provided. In one aspect, the method includes the steps of forming a gate insulating layer on the substrate with a first outwardly tapered sidewall and a second outwardly tapered sidewall. A gate electrode is formed on the gate insulating layer. A first source/drain region and a second source/drain region are formed in the substrate by implanting ions into the substrate, wherein a first portion of the ions passes through the first sidewall and a second portion of the ions passes through the second sidewall. The method provides for incorporation of spacer-like structure into a gate dielectric layer. Conventional spacer fabrication may be eliminated and graded source/drain regions established with a single implant.
摘要:
The present invention relates to a semiconductor device, preferably a capacitor, and a method of forming the same. The method adds only a single additional masking step to the fabrication process and reduces problems relating to alignment of various layers. A relatively thick insulation layer is formed over a bottom electrode. An opening having a sidewall that is etched in the insulation layer using a mask to expose a portion of the bottom electrode. Once the mask is removed, a dielectric layer and conductive layer are then sequentially deposited over the entire structure, including sidewalls. Thereafter, chemical-mechanical polishing is used to remove portions of the conductive layer and the dielectric layer so that the conductive layer and dielectric layer which remains forms, for example, the top electrode and dielectric layer of the integrated circuit capacitor. The top electrode is thus disposed above a central region which remains of the dielectric layer and between a peripheral region which remains of the dielectric layer.
摘要:
High quality oxides utilized in tunnel oxides and CMOS gate oxides are formed using a process that includes annealing a semiconductor substrate, after the oxide has been formed, in an ambient comprised of NO to form a surface layer in the oxide containing a concentration of nitrogen. A high-quality tunnel oxide, suitable for EEPROM devices, is formed upon a surface region of a semiconductor body over a heavily-doped N+ layer by first oxidizing the semiconductor body to form an oxide upon the surface region of the semiconductor body over the heavily-doped N+ layer. Next, the semiconductor body is annealed, under a gettering ambient, to densify the oxide and to dope the oxide at its surface and for a portion thereinto near its surface with a gettering agent. The semiconductor body is then oxidized, under an oxidizing ambient, to thicken the oxide. The annealing step in NO improves characteristics for both the gate and tunnel oxides of the device at a temperature substantially reduced from prior art methods and in an ambient atmosphere containing significantly more NO. The NO anneal can be performed in a variety of ways including an RTP anneal, a furnace anneal and can be performed on processes where the oxides are formed using CVD and PECVD.
摘要:
A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.
摘要:
Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.
摘要:
A gate electrode for semiconductor devices, the gate electrode comprising a mixture of a metal having a work function of about 4 eV or less and a metal nitride.