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1.发明申请公开(公告)号：US20120138570A1
公开(公告)日：2012-06-07
申请号：US13396039
申请日：2012-02-14
CPC分类号： H01L29/0657 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , G03F7/0002 , H01L21/02118 , H01L21/0223 , H01L29/06 , Y10S438/947 , Y10S977/888 , Y10S977/895 , Y10S977/90 , Y10T428/24182 , Y10T428/24521 , Y10T428/2462 , Y10T428/249921
摘要： Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.
摘要翻译： 提供了利用自组装嵌段共聚物在线阵列中制备亚光刻，纳米尺度微结构的方法，以及由这些方法形成的膜和器件。
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2.发明申请Alternating Self-Assembling Morphologies of Diblock Copolymers Controlled by Variations in Surfaces 有权通过表面变化控制的双嵌段共聚物的交替自组装形态公开(公告)号：US20100279062A1
公开(公告)日：2010-11-04
申请号：US12834097
申请日：2010-07-12
IPC分类号： B32B3/30
CPC分类号： H01J37/02 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , G03F7/0002 , G03F7/265 , Y10T428/24 , Y10T428/24149 , Y10T428/24174 , Y10T428/2438
摘要： Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.
摘要翻译： 提供了使用自组装嵌段共聚物制造包括开口和线性微通道的亚光刻纳米尺度微结构阵列的方法，以及由这些方法形成的膜和器件。 在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。
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公开(公告)号：US20060139561A1
公开(公告)日：2006-06-29
申请号：US11356907
申请日：2006-02-17
IPC分类号： G02F1/1339
CPC分类号： G03F7/0017 , B29C33/3857 , G02F1/1339 , G02F1/13394 , H01J2211/36 , Y10T428/1059
摘要： The present invention describes thick film photolithographic molds, methods of making thick film photolithographic molds, and methods of using thick film photolithographic molds to form spacers on a substrate. The thick film photolithographic molds preferably comprise an epoxy bisphenol A novolac resin. The present invention also describes sol gel spacers comprising sodium silicates and potassium silicates. The thick film photolithographic molds and sol gel spacers of the present invention can be used in flat panel displays, such as field emission displays and plasma displays.
摘要翻译： 本发明描述了厚膜光刻模具，制备厚膜光刻模具的方法，以及使用厚膜光刻模具在衬底上形成间隔物的方法。 厚膜光刻模优选包含环氧双酚A酚醛清漆树脂。 本发明还描述了包含硅酸钠和硅酸钾的溶胶凝胶间隔物。 本发明的厚膜光刻模和溶胶凝胶间隔物可用于诸如场发射显示器和等离子体显示器的平板显示器中。
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4.发明申请Systems and methods for forming niobium and/or vanadium containing layers using atomic layer deposition 失效使用原子层沉积形成铌和/或含钒层的系统和方法公开(公告)号：US20060040480A1
公开(公告)日：2006-02-23
申请号：US10923315
申请日：2004-08-20
IPC分类号： H01L21/20
CPC分类号： H01L21/02205 , C23C16/405 , C23C16/45553 , H01L21/02175 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31604 , H01L28/90
摘要： A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium and using an atomic layer deposition process including a plurality of deposition cycles.
摘要翻译： 使用一种或多种包括铌和/或钒的前体化合物在基板上，特别是用于制造半导体或存储器件结构的半导体衬底或衬底组件中形成（以及用于形成）含金属层的方法 以及使用包括多个沉积循环的原子层沉积工艺。
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公开(公告)号：US20050255698A1
公开(公告)日：2005-11-17
申请号：US11146609
申请日：2005-06-07
申请人： Gurtej Sandhu , Donald Westmoreland
发明人： Gurtej Sandhu , Donald Westmoreland
IPC分类号： C23C16/02 , C23C16/06 , H01L21/285 , H01L21/44 , H01L21/768
CPC分类号： H01L21/76858 , C23C16/0281 , C23C16/045 , C23C16/06 , C23C16/08 , C23C16/56 , H01L21/28518 , H01L21/28556 , H01L21/28568 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76876 , Y10S257/906 , Y10T428/12674 , Y10T428/12743 , Y10T428/31678
摘要： A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.
摘要翻译： 在化学气相沉积（CVD）的基板上形成钛层。 首先，通过CVD将第一前体与还原剂组合在基板上形成种子层。 然后，通过CVD通过将第二前体与种子层组合而在基板上形成钛层。 钛层用于与衬底的有源区形成接触并形成层间通孔。
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6.发明申请公开(公告)号：US20050016869A1
公开(公告)日：2005-01-27
申请号：US10923478
申请日：2004-08-20
摘要： The present invention provides methods and systems for the electrolytic removal of platinum and/or other of the Group 8-11 metals from substrates.
摘要翻译： 本发明提供了用于从基底电解去除铂和/或其它第8-11族金属的方法和系统。
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7.发明授权Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces 有权通过表面变化控制的二嵌段共聚物的交替自组装形态公开(公告)号：US08609221B2
公开(公告)日：2013-12-17
申请号：US12834097
申请日：2010-07-12
IPC分类号： B32B3/30
CPC分类号： H01J37/02 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , G03F7/0002 , G03F7/265 , Y10T428/24 , Y10T428/24149 , Y10T428/24174 , Y10T428/2438
摘要： Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.
摘要翻译： 提供了使用自组装嵌段共聚物制造包括开口和线性微通道的亚光刻纳米尺度微结构阵列的方法，以及由这些方法形成的膜和器件。 在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。
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8.发明授权公开(公告)号：US08404124B2
公开(公告)日：2013-03-26
申请号：US11761589
申请日：2007-06-12
IPC分类号： B44C1/22 , B82B3/00 , H01L21/302 , B82Y40/00
CPC分类号： H01J37/02 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , G03F7/0002 , G03F7/265 , Y10T428/24 , Y10T428/24149 , Y10T428/24174 , Y10T428/2438
摘要： Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.
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9.发明申请公开(公告)号：US20090274887A1
公开(公告)日：2009-11-05
申请号：US12114173
申请日：2008-05-02
CPC分类号： H01L29/0657 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , G03F7/0002 , H01L21/02118 , H01L21/0223 , H01L29/06 , Y10S438/947 , Y10S977/888 , Y10S977/895 , Y10S977/90 , Y10T428/24182 , Y10T428/24521 , Y10T428/2462 , Y10T428/249921
摘要： Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.
摘要翻译： 提供了利用自组装嵌段共聚物在线阵列中制备亚光刻纳米级微结构的方法，以及由这些方法形成的膜和器件。
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公开(公告)号：US20060070574A1
公开(公告)日：2006-04-06
申请号：US11218773
申请日：2005-09-01
申请人： Garo Derderian , Cem Basceri , Donald Westmoreland
发明人： Garo Derderian , Cem Basceri , Donald Westmoreland
IPC分类号： C23C16/00
CPC分类号： H01L29/06 , B01J20/3483 , B01J38/02 , C23C16/08 , C23C16/34 , C23C16/4404 , C23C16/4412 , H01L21/324 , H01L23/58 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
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