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11 条记录 (耗时 0.013 秒)

    Optical grating coupler
    4.
    发明授权
    Optical grating coupler 有权
    光栅耦合器

    公开(公告)号：US07715676B2

    公开(公告)日：2010-05-11

    申请号：US11444541

    申请日：2006-05-31

    申请人： Jun-Fei Zheng ,  Kazumi Wada ,  Jurgen Michel ,  Donghwan Ahn ,  Lionel C. Kimerling

    发明人： Jun-Fei Zheng ,  Kazumi Wada ,  Jurgen Michel ,  Donghwan Ahn ,  Lionel C. Kimerling

    IPC分类号： G02B6/10

    CPC分类号： G02B6/124 ,  G02B6/42

    摘要： An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.

    摘要翻译： 光栅设置在波导将光从波导的内部通过从光栅波导的相反端的重定向。 在一个实施例中，波导，光栅和光学传感器被组合在一个单一的整体结构。 在另一个实施例中，吸收层在光栅的区域中直接连接到波导。 在另一个实施例中，通过在光栅的折射率和设置在光栅上的包层的折射率之间具有高折射率对比度，以及通过在光栅中具有适当尺寸的不连续性来提高光栅的效率。

    INTEGRATING FABRICATION OF PHOTODETECTOR WITH FABRICATION OF CMOS DEVICE ON A SILICON-ON-INSULATOR SUBSTRATE
    5.
    发明申请
    INTEGRATING FABRICATION OF PHOTODETECTOR WITH FABRICATION OF CMOS DEVICE ON A SILICON-ON-INSULATOR SUBSTRATE 审中-公开
    用CMOS绝缘体基板上的CMOS器件制造光电二极管的集成制造

    公开(公告)号：US20100038689A1

    公开(公告)日：2010-02-18

    申请号：US12191189

    申请日：2008-08-13

    申请人： Donghwan Ahn ,  Sanjay Banerjee ,  Joe C. Campbell

    发明人： Donghwan Ahn ,  Sanjay Banerjee ,  Joe C. Campbell

    IPC分类号： H01L31/105 ,  H01L31/18

    CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L31/02019 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/1808 ,  H01L31/184 ,  Y02E10/50

    摘要： A method and semiconductor device for integrating the fabrication of a photodetector with the fabrication of a CMOS device on a SOI substrate. The SOI substrate is divided into two regions, a CMOS region and an optical detecting region. After the CMOS device is fabricated in the CMOS region, the optical detecting region is patterned and etched through the top silicon layer and the buried oxide layer to the base silicon layer. The pattern is etched to a depth so that after a material of a photodetector is deposited in the etched pattern, the material grows to the surface level of the SOI substrate. After the formation of a photodetector structure in the optical detecting region, the metallization process is performed on the CMOS device and the photodetector. In this manner, the fabrication of a photodetector is integrated with the fabrication of a CMOS device on the SOI substrate.

    摘要翻译： 一种用于将光电检测器的制造与在SOI衬底上制造CMOS器件集成的方法和半导体器件。 SOI衬底被分成两个区域，即CMOS区域和光学检测区域。 在CMOS器件制造在CMOS区域之后，光学检测区域被图案化并通过顶部硅层和掩埋氧化物层蚀刻到基底硅层。 将图案蚀刻到深度，使得在光刻器的材料沉积在蚀刻图案中之后，材料生长到SOI衬底的表面水平。 在光学检测区域中形成光检测器结构之后，在CMOS器件和光检测器上进行金属化处理。 以这种方式，光电探测器的制造与SOI衬底上的CMOS器件的制造集成在一起。

    Optical grating coupler
    6.
    发明授权
    Optical grating coupler 有权

    公开(公告)号：US07146074B2

    公开(公告)日：2006-12-05

    申请号：US10867949

    申请日：2004-06-14

    申请人： Jun-Fei Zheng ,  Kazumi Wada ,  Jurgen Michel ,  Donghwan Ahn ,  Lionel C. Kimerling

    发明人： Jun-Fei Zheng ,  Kazumi Wada ,  Jurgen Michel ,  Donghwan Ahn ,  Lionel C. Kimerling

    IPC分类号： G02B6/34

    CPC分类号： G02B6/124 ,  G02B6/42

    摘要： An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.

    Optical grating coupler
    7.
    发明申请
    Optical grating coupler 有权
    光栅耦合器

    公开(公告)号：US20060233505A1

    公开(公告)日：2006-10-19

    申请号：US11444541

    申请日：2006-05-31

    申请人： Jun-Fei Zheng ,  Kazumi Wada ,  Jurgen Michel ,  Donghwan Ahn ,  Lionel Kimerling

    发明人： Jun-Fei Zheng ,  Kazumi Wada ,  Jurgen Michel ,  Donghwan Ahn ,  Lionel Kimerling

    IPC分类号： G02B6/10

    CPC分类号： G02B6/124 ,  G02B6/42

    摘要： An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.

    摘要翻译： 光波导设置在波导上，以将来自波导内部的光通过波导的与光栅相反的一侧引导。 在一个实施例中，波导，光栅和光学传感器被组合成单个整体结构。 在另一个实施例中，吸收层在光栅的区域中直接连接到波导。 在另一个实施例中，通过在光栅的折射率和设置在光栅上的包层的折射率之间具有高折射率对比度，以及通过在光栅中具有适当尺寸的不连续性来提高光栅的效率。

    Optical grating coupler
    8.
    发明授权
    Optical grating coupler 有权

    公开(公告)号：US07065271B2

    公开(公告)日：2006-06-20

    申请号：US10280159

    申请日：2002-10-25

    申请人： Jun-Fei Zheng ,  Kazumi Wada ,  Jurgen Michel ,  Donghwan Ahn ,  Lionel C. Kimerling

    发明人： Jun-Fei Zheng ,  Kazumi Wada ,  Jurgen Michel ,  Donghwan Ahn ,  Lionel C. Kimerling

    IPC分类号： G02B6/34

    CPC分类号： G02B6/124 ,  G02B6/42

    摘要： An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.

    Vertically-integrated waveguide photodetector apparatus and related coupling methods
    10.
    发明授权
    Vertically-integrated waveguide photodetector apparatus and related coupling methods 有权
    垂直集成波导光电探测器及相关耦合方法

    公开(公告)号：US07305157B2

    公开(公告)日：2007-12-04

    申请号：US11269355

    申请日：2005-11-08

    申请人： Donghwan Ahn ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

    发明人： Donghwan Ahn ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

    IPC分类号： G02B6/12

    CPC分类号： G02B6/12004 ,  G02B6/1228 ,  G02B6/4201 ,  G02B2006/12061

    摘要： High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.

    摘要翻译： 具有与CMOS处理技术通用兼容的方法制造具有与光电检测器密集地集成并有效耦合的光波导的高速光电子器件。 在各种实施方案中，波导基本上由单晶硅组成，并且光电检测器包含或基本上由外延生长的锗或锗浓度超过约90％的硅 - 锗合金构成。