公开(公告)号：US08198114B2

公开(公告)日：2012-06-12

申请号：US12909297

申请日：2010-10-21

申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L21/56

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US08012779B2

公开(公告)日：2011-09-06

申请号：US11878360

申请日：2007-07-24

申请人： Seok Beom Choi ,  Bang Won Oh ,  Jong Gun Woo ,  Doo Go Baik

发明人： Seok Beom Choi ,  Bang Won Oh ,  Jong Gun Woo ,  Doo Go Baik

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/02 ,  H01L33/22

摘要： A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

摘要翻译： 垂直GaN基LED包括n电极; 形成在n电极下面的n型GaN层，所述n型GaN层具有不规则表面结构，所述n型GaN层包括具有以均匀间隔形成的凹凸的第一不规则表面结构和具有不规则形状的第二不规则表面结构 第二不规则表面结构形成在第一不规则表面结构上; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

公开(公告)号：US07872276B2

公开(公告)日：2011-01-18

申请号：US11742818

申请日：2007-05-01

申请人： Su Yeol Lee ,  Bang Won Oh ,  Doo Go Baik ,  Tae Sung Jang ,  Jong Gun Woo ,  Seok Beom Choi ,  Sang Ho Yoon ,  Dong Woo Kim ,  In Tae Yeo

发明人： Su Yeol Lee ,  Bang Won Oh ,  Doo Go Baik ,  Tae Sung Jang ,  Jong Gun Woo ,  Seok Beom Choi ,  Sang Ho Yoon ,  Dong Woo Kim ,  In Tae Yeo

IPC分类号： H01L33/00

CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.

摘要翻译： 制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

公开(公告)号：US20080093618A1

公开(公告)日：2008-04-24

申请号：US11889562

申请日：2007-08-14

申请人： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/40

摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

摘要翻译： 提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，所述n型GaN层具有与n电极接触的表面，所述表面具有含有较大量的Ga + N层 的Ga; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

公开(公告)号：US20070145391A1

公开(公告)日：2007-06-28

申请号：US11585212

申请日：2006-10-24

申请人： Doo Go Baik ,  Bang Won Oh ,  Tae Jun Kim

发明人： Doo Go Baik ,  Bang Won Oh ,  Tae Jun Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/145 ,  H01L33/0033 ,  H01L33/32

摘要： A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.

摘要翻译： 提供了一种垂直氮化物半导体发光器件及其制造方法。 在该器件中，在导电性基板上依次形成欧姆接触层，p型氮化物半导体层，有源层，n型氮化物半导体层和n电极。 接触欧姆接触层的p型氮化物半导体层的表面和与n电极接触的n型氮化物层的表面中的至少一个在其基本中心部分具有高的受损氮化物单晶的电阻面积 。 高电阻区域具有与欧姆接触层和n电极中的至少一个的肖特基结。

公开(公告)号：US08115220B2

公开(公告)日：2012-02-14

申请号：US11889562

申请日：2007-08-14

申请人： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/40

摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

公开(公告)号：US07695989B2

公开(公告)日：2010-04-13

申请号：US12406540

申请日：2009-03-18

申请人： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

发明人： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

IPC分类号： H01L21/00

CPC分类号： H01L33/14 ,  H01L33/02 ,  H01L33/32

摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.

摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。 垂直GaN基LED包括：支撑层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

公开(公告)号：US07687818B2

公开(公告)日：2010-03-30

申请号：US12177517

申请日：2008-07-22

申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/405

摘要： There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked. Here, the reflective electrode includes; a first reflective layer provided on the substrate and including a conductive reflective material reflecting light generated from the active layer; and a second reflective layer provided on the first reflective layer, including one or more dielectric portions reflecting light generated from the active layer, and one or more contact holes filled with a conductive filler to electrically connect the first conductivity type semiconductor layer and the first reflective layer, and having a greater thickness than a wavelength of the generated light.

摘要翻译： 提供了具有优异的光提取效率的半导体发光器件，以通过增加反射层的总反射率来有效地反射移入器件的光。 根据本发明的一个方面的半导体发光器件包括：依次堆叠的衬底，反射电极，第一导电半导体层，有源层和第二导电类型半导体层。 这里，反射电极包括： 第一反射层，设置在所述基板上，并且包括反射从所述有源层产生的光的导电反射材料; 以及设置在所述第一反射层上的第二反射层，包括反射从所述有源层产生的光的一个或多个介电部分和填充有导电填料的一个或多个接触孔，以将所述第一导电类型半导体层和所述第一反射层 并且具有比所产生的光的波长更大的厚度。

公开(公告)号：US20090221110A1

公开(公告)日：2009-09-03

申请号：US12466086

申请日：2009-05-14

申请人： Su Yeol LEE ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Su Yeol LEE ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L21/28

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/40

摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

摘要翻译： 提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，n型GaN层具有与n电极接触的表面，该表面具有比N大的Ga的Ga + N层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

公开(公告)号：US20080042149A1

公开(公告)日：2008-02-21

申请号：US11692568

申请日：2007-03-28

申请人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

发明人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。