公开(公告)号：US20100159139A1

公开(公告)日：2010-06-24

申请号：US12542188

申请日：2009-08-17

Applicant: Seong Hyun Kim ,  Sang Chul Lim ,  Yong Suk Yang ,  Zin Sig Kim ,  Doo Hyeb Youn

Inventor： Seong Hyun Kim ,  Sang Chul Lim ,  Yong Suk Yang ,  Zin Sig Kim ,  Doo Hyeb Youn

IPC: B05D1/36

CPC classification number: H01L51/0005

Abstract: Provided is a method of forming a fine pattern of a polymer thin film using a phenomenon that another material having a large difference in surface energy in comparison with a polymer thin film pattern is dewetted on the polymer thin film pattern. Two polymer materials having a large difference in surface energy can be applied to readily and conveniently form a fine pattern of a polymer thin film of micrometer or sub-micrometer grade.

Abstract translation: 提供了使用在聚合物薄膜图案上将聚合物薄膜图案相比具有与聚合物薄膜图案相比具有大的表面能差异的另一种材料的现象形成聚合物薄膜的精细图案的方法。 可以应用具有大的表面能差异的两种聚合物材料，以容易且方便地形成微米级或亚微米级的聚合物薄膜的精细图案。

公开(公告)号：US07728327B2

公开(公告)日：2010-06-01

申请号：US11011878

申请日：2004-12-13

Applicant: Hyun Tak Kim ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

Inventor： Hyun Tak Kim ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

IPC: H01L29/04

CPC classification number: H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625

Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

Abstract translation: 提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的空穴层中的孔，以及设置在突发上的第二电极层 MIT半导体有机或无机材料层。 通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

公开(公告)号：US06987290B2

公开(公告)日：2006-01-17

申请号：US10866274

申请日：2004-06-10

Applicant: Hyun Tak Kim ,  Doo Hyeb Youn ,  Kwang Yong Kang ,  Byung Gyu Chae ,  Yong Sik Lim ,  Seong Hyun Kim ,  Sungyul Maeng ,  Gyungock Kim

Inventor： Hyun Tak Kim ,  Doo Hyeb Youn ,  Kwang Yong Kang ,  Byung Gyu Chae ,  Yong Sik Lim ,  Seong Hyun Kim ,  Sungyul Maeng ,  Gyungock Kim

IPC: H01L39/16

CPC classification number: H01L45/00

Abstract: A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.

Abstract translation: 提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。 突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。 电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。 根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。

公开(公告)号：US08673403B2

公开(公告)日：2014-03-18

申请号：US12542188

申请日：2009-08-17

Applicant: Seong Hyun Kim ,  Sang Chul Lim ,  Yong Suk Yang ,  Zin Sig Kim ,  Doo Hyeb Youn

Inventor： Seong Hyun Kim ,  Sang Chul Lim ,  Yong Suk Yang ,  Zin Sig Kim ,  Doo Hyeb Youn

IPC: B05D1/04 ,  B05D1/36 ,  B05D1/40

CPC classification number: H01L51/0005

Abstract: Provided is a method of forming a fine pattern of a polymer thin film using a phenomenon that another material having a large difference in surface energy in comparison with a polymer thin film pattern is dewetted on the polymer thin film pattern. Two polymer materials having a large difference in surface energy can be applied to readily and conveniently form a fine pattern of a polymer thin film of micrometer or sub-micrometer grade.

Abstract translation: 提供了使用在聚合物薄膜图案上将聚合物薄膜图案相比具有与聚合物薄膜图案相比具有大的表面能差异的另一种材料的现象形成聚合物薄膜的精细图案的方法。 可以应用具有大的表面能差异的两种聚合物材料，以容易且方便地形成微米级或亚微米级的聚合物薄膜的精细图案。

公开(公告)号：US07863085B2

公开(公告)日：2011-01-04

申请号：US12244364

申请日：2008-10-02

Applicant: Sang Chul Lim ,  Seong Hyun Kim ,  Yong Suk Yang ,  Doo Hyeb Youn ,  Zin Sig Kim

Inventor： Sang Chul Lim ,  Seong Hyun Kim ,  Yong Suk Yang ,  Doo Hyeb Youn ,  Zin Sig Kim

IPC: H01L51/40

CPC classification number: H01L51/0533 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0562

Abstract: An organic thin film transistor (OTFT), a method of manufacturing the same, and a biosensor using the OTFT are provided. The OTFT includes a gate electrode, a gate insulating layer, source and drain electrodes, and an organic semiconductor layer disposed on a substrate and further includes an interface layer formed between the gate insulating layer and the organic semiconductor layer by a sol-gel process. The gate insulating layer is formed of an organic polymer, and the interface layer is formed of an inorganic material. The OTFT employs the interface layer interposed between the gate insulating layer and the organic semiconductor layer so that the gate insulating layer can be protected from the exterior and adhesion of the gate insulating layer with the organic semiconductor layer can be improved, thereby increasing driving stability. Also, since the OTFT can use a plastic substrate, the manufacture of the OTFT is inexpensive so that the OTFT can be used as a disposable biosensor.

Abstract translation: 提供有机薄膜晶体管（OTFT），其制造方法和使用OTFT的生物传感器。 OTFT包括栅极电极，栅极绝缘层，源极和漏极电极以及设置在基板上的有机半导体层，并且还包括通过溶胶 - 凝胶法在栅极绝缘层和有机半导体层之间形成的界面层。 栅绝缘层由有机聚合物形成，界面层由无机材料形成。 OTFT采用插入在栅极绝缘层和有机半导体层之间的界面层，从而可以保护栅极绝缘层免受外部的侵蚀，从而可以提高栅极绝缘层与有机半导体层的粘附性，从而提高驱动稳定性。 此外，由于OTFT可以使用塑料基板，OTFT的制造便宜，因此OTFT可以用作一次性生物传感器。

公开(公告)号：US20080137093A1

公开(公告)日：2008-06-12

申请号：US11759493

申请日：2007-06-07

Applicant: Kwang Yong Kang ,  Mun Cheol Paek ,  Doo Hyeb Youn ,  Min Hwan Kwak ,  Suk Gil Han

Inventor： Kwang Yong Kang ,  Mun Cheol Paek ,  Doo Hyeb Youn ,  Min Hwan Kwak ,  Suk Gil Han

IPC: G01B9/02

CPC classification number: G01R31/2822 ,  G01R31/2841

Abstract: An apparatus and method for generating a terahertz (THz) wave are provided. The apparatus comprises: an fiber optic probe injecting an optical wave transmitted through an optical fiber into a device under test (DUT); a driving oscillator generating and injecting an electrical wave into the DUT; and the device under test (DUT) generating a THz wave using the produced optical and electrical waves.

Abstract translation: 提供了一种用于产生太赫兹（THz）波的装置和方法。 该装置包括：将通过光纤传输的光波注入被测器件（DUT）的光纤探针; 产生并将电波注入DUT的驱动振荡器; 和被测器件（DUT）使用产生的光和电波产生太赫兹波。

公开(公告)号：US08017268B2

公开(公告)日：2011-09-13

申请号：US11813898

申请日：2006-01-12

Applicant: Hyun-Tak Kim ,  Doo-Hyeb Youn ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Jung-Wook Lim ,  Gyung-Ock Kim ,  Sung-Lyul Maeng

Inventor： Hyun-Tak Kim ,  Doo-Hyeb Youn ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Jung-Wook Lim ,  Gyung-Ock Kim ,  Sung-Lyul Maeng

IPC: H01M4/02 ,  H01M4/13

CPC classification number: H01M2/34 ,  H01M2/348 ,  H01M10/052 ,  H01M10/443 ,  H01M2200/00 ,  H01M2200/106

Abstract: Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.

Abstract translation: 提供一种锂二次电池，其包括能够延迟或防止电池爆炸的放电单元。 锂二次电池包括与电池体平行设置的放电单元。 放电单元包括连接到电池体的正极的第一电极，连接到电池体的负极的第二电极和设置在第一电极和第二电极之间的放电材料膜，引起突然的放电 高于预定温度。 放电材料膜，例如突然的金属 - 绝缘体转变（MIT）材料膜可以引起突然的放电，从而防止或延迟电池爆炸。

公开(公告)号：US20100134936A1

公开(公告)日：2010-06-03

申请号：US11816732

申请日：2006-02-17

Applicant: Hyun-Tak Kim ,  Kwang-Yong Kang ,  Byung-Gyu Chae ,  Bong-jun Kim ,  Sun-jin Yun ,  Yong-wook Lee ,  Gyung-Ock Kim ,  Doo-Hyeb Youn ,  Jung-Wook Lim

Inventor： Hyun-Tak Kim ,  Kwang-Yong Kang ,  Byung-Gyu Chae ,  Bong-jun Kim ,  Sun-jin Yun ,  Yong-wook Lee ,  Gyung-Ock Kim ,  Doo-Hyeb Youn ,  Jung-Wook Lim

IPC: H02H9/04 ,  H02H9/00

CPC classification number: H01L49/003 ,  H01L27/0248

Abstract: Provided are an electrical and/or electronic system protecting circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove high-frequency noise with a voltage greater than a rated standard voltage received via a power line or a signal line of an electrical and/or electronic system, and the electrical and/or electronic system including the electrical and/or electronic system protecting circuit. The abrupt MIT device of the electrical and/or electronic system protecting circuit abrupt is connected in parallel to the electrical and/or electronic system to be protected from the noise. The electrical and/or electronic system protecting circuit bypasses toward the abrupt MIT device most of the noise current generated when the voltage greater than the rated standard voltage is applied, thereby protecting the electrical and/or electronic system.

Abstract translation: 提供了使用突变金属 - 绝缘体转变（MIT）装置的电和/或电子系统保护电路，其可以以大于经由电力线或信号线接收的额定标准电压的电压有效地去除高频噪声 电气和/或电子系统，以及包括电气和/或电子系统保护电路的电气和/或电子系统。 电气和/或电子系统保护电路突然的MIT设备突然连接到电气和/或电子系统以防止噪声。 当施加大于额定标准电压的电压时，电气和/或电子系统保护电路绕过突然的MIT设备，大部分噪声电流产生，从而保护电气和/或电子系统。

公开(公告)号：US20090230428A1

公开(公告)日：2009-09-17

申请号：US11721069

申请日：2005-12-05

Applicant: Doo-Hyeb Youn ,  Hyun-Tak Kim ,  Byung-Gyu Chae ,  Sung-Lyul Maeng ,  Kwang-Yong Kang

Inventor： Doo-Hyeb Youn ,  Hyun-Tak Kim ,  Byung-Gyu Chae ,  Sung-Lyul Maeng ,  Kwang-Yong Kang

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L49/003 ,  H01L29/452

Abstract: The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.

Abstract translation: 突变金属 - 绝缘体转换装置包括：突然的金属绝缘体过渡材料层，其包括小于或等于2eV的能隙和孔内的孔; 并且两个电极接触突变的金属 - 绝缘体转移材料层。 这里，两个电极中的每一个通过热处理形成在突变金属 - 绝缘体转移材料层上并包含Ni或Cr的第一层的叠层形成，第二层形成在第一层上并包括In的第三层，第三层 形成在第二层上并且包含Mo或W，以及形成在第三层上并包含Au的第四层。

公开(公告)号：US06864510B2

公开(公告)日：2005-03-08

申请号：US10683328

申请日：2003-10-09

Applicant: Doo Hyeb Youn ,  Kyu Seok Lee

Inventor： Doo Hyeb Youn ,  Kyu Seok Lee

IPC: H01L29/20 ,  H01L29/45 ,  H01L29/778 ,  H01L31/0256

CPC classification number: H01L29/452 ,  H01L29/2003 ,  H01L29/7787

Abstract: Provided are a nitride semiconductor field effect transistor (FET) and a method of fabricating the nitride semiconductor FET. The nitride semiconductor FET includes a first semiconductor layer, a second semiconductor layer, a two-dimensional electron gas layer, a T-shaped gate, and a source/drain ohmic electrode. The first semiconductor layer is formed on a substrate. The second semiconductor layer is formed on the first semiconductor layer and has a bandgap energy that is different from the bandgap energy of the first semiconductor layer. The two-dimensional electron gas layer is formed of a hetero-junction of the first semiconductor layer and the second semiconductor layer in an interfacial area between the first semiconductor layer and the second semiconductor layer. The T-shaped gate is formed on the second semiconductor layer and is connected to the second semiconductor layer. The source/drain ohmic electrode is formed by sequentially forming an Ni (or Cr) layer, an In layer, an Mo (or W) layer, and an Au layer at both sides of the second semiconductor layer and on the first semiconductor layer.

Abstract translation: 提供了氮化物半导体场效应晶体管（FET）和制造氮化物半导体FET的方法。 氮化物半导体FET包括第一半导体层，第二半导体层，二维电子气体层，T形栅极和源极/漏极欧姆电极。 第一半导体层形成在基板上。 第二半导体层形成在第一半导体层上，并且具有与第一半导体层的带隙能不同的带隙能。 所述二维电子气体层由所述第一半导体层和所述第二半导体层的异质结在所述第一半导体层与所述第二半导体层之间的界面区域中形成。 T形栅极形成在第二半导体层上并连接到第二半导体层。 源极/漏极欧姆电极通过在第二半导体层的两侧和第一半导体层上依次形成Ni（或Cr）层，In层，Mo（或W）层和Au层而形成。