公开(公告)号：US08624288B2

公开(公告)日：2014-01-07

申请号：US13219356

申请日：2011-08-26

申请人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/36 ,  H01L33/44

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

公开(公告)号：US07867885B2

公开(公告)日：2011-01-11

申请号：US11709153

申请日：2007-02-22

申请人： Duk Kyu Bae

发明人： Duk Kyu Bae

IPC分类号： H01L21/44

CPC分类号： H01L33/20 ,  H01L27/1085 ,  H01L33/007 ,  H01L33/0079 ,  H01L2933/0083

摘要： A nanometer-scale post structure and a method for forming the same are disclosed. More particularly, a post structure, a light emitting device using the structure, and a method for forming the same, which is capable of forming a nanometer-scale post structure having a repetitive pattern by using an etching process, are disclosed. The method includes forming unit patterns on a substrate by use of a first material, growing a wet-etchable second material on the substrate formed with the unit patterns, and wet etching the substrate having the grown second material.

摘要翻译： 公开了纳米级后结构及其形成方法。 更具体地，公开了一种后结构，使用该结构的发光器件及其形成方法，其能够通过使用蚀刻工艺形成具有重复图案的纳米级后结构。 该方法包括通过使用第一材料在衬底上形成单元图案，在形成有单元图案的衬底上生长可湿蚀刻的第二材料，以及湿蚀刻具有生长的第二材料的衬底。

公开(公告)号：US20110003416A1

公开(公告)日：2011-01-06

申请号：US12880809

申请日：2010-09-13

申请人： Jun Ho JANG ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho JANG ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/30

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

公开(公告)号：US20100237371A1

公开(公告)日：2010-09-23

申请号：US12681540

申请日：2008-10-02

申请人： Bong Cheol Kang ,  Duk Kyu Bae

发明人： Bong Cheol Kang ,  Duk Kyu Bae

IPC分类号： H01L33/44 ,  H01L33/36 ,  H01L21/28

CPC分类号： H01L33/44 ,  H01L33/22 ,  H01L33/38 ,  H01L33/465

摘要： Disclosed is a light emitting device. The light emitting device comprises a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a second electrode layer supporting the light emitting semiconductor layer while surrounding the light emitting semiconductor layer, and a first passivation layer between a side of the light emitting semiconductor layer and the second electrode layer.

摘要翻译： 公开了一种发光器件。 发光器件包括包括第一导电半导体层，有源层和第二导电半导体层的发光半导体层，支撑发光半导体层同时围绕发光半导体层的第二电极层，以及第一钝化层 在发光半导体层的一侧和第二电极层之间。

公开(公告)号：US20070224831A1

公开(公告)日：2007-09-27

申请号：US11709153

申请日：2007-02-22

申请人： Duk Kyu Bae

发明人： Duk Kyu Bae

IPC分类号： H01L21/302

CPC分类号： H01L33/20 ,  H01L27/1085 ,  H01L33/007 ,  H01L33/0079 ,  H01L2933/0083

摘要： A nanometer-scale post structure and a method for forming the same are disclosed. More particularly, a post structure, a light emitting device using the structure, and a method for forming the same, which is capable of forming a nanometer-scale post structure having a repetitive pattern by using an etching process, are disclosed. The method includes forming unit patterns on a substrate by use of a first material, growing a wet-etchable second material on the substrate formed with the unit patterns, and wet etching the substrate having the grown second material.

摘要翻译： 公开了纳米级后结构及其形成方法。 更具体地，公开了一种后结构，使用该结构的发光器件及其形成方法，其能够通过使用蚀刻工艺形成具有重复图案的纳米级后结构。 该方法包括通过使用第一材料在衬底上形成单元图案，在形成有单元图案的衬底上生长可湿蚀刻的第二材料，以及湿蚀刻具有生长的第二材料的衬底。

公开(公告)号：US08482018B2

公开(公告)日：2013-07-09

申请号：US12681540

申请日：2008-10-02

申请人： Bong Cheol Kang ,  Duk Kyu Bae

发明人： Bong Cheol Kang ,  Duk Kyu Bae

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/22 ,  H01L33/38 ,  H01L33/465

摘要： Disclosed is a light emitting device. The light emitting device comprises a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a second electrode layer supporting the light emitting semiconductor layer while surrounding the light emitting semiconductor layer, and a first passivation layer between a side of the light emitting semiconductor layer and the second electrode layer.

摘要翻译： 公开了一种发光器件。 发光器件包括包括第一导电半导体层，有源层和第二导电半导体层的发光半导体层，支撑发光半导体层同时围绕发光半导体层的第二电极层，以及第一钝化层 在发光半导体层的一侧和第二电极层之间。

公开(公告)号：US20070295952A1

公开(公告)日：2007-12-27

申请号：US11708133

申请日：2007-02-20

申请人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

公开(公告)号：US20120025248A1

公开(公告)日：2012-02-02

申请号：US13191067

申请日：2011-07-26

申请人： Duk-Kyu BAE

发明人： Duk-Kyu BAE

IPC分类号： H01L33/38 ,  H01L33/44

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/44

摘要： Provided is a semiconductor light emitting device. The semiconductor light emitting device includes a conductive substrate, a p-type electrode disposed on the conductive substrate, a transparent electrode layer disposed on the p-type electrode, a light emitting structure comprising a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, which are sequentially stacked on the transparent electrode layer, and an n-type electrode disposed on the n-type semiconductor layer. The light emitting structure is disposed on a top middle of the transparent electrode layer to allow a side of the light emitting structure to be spaced from an edge of the transparent electrode layer. The transparent electrode layer has an uneven surface at an outer portion of the light emitting structure.

摘要翻译： 提供了一种半导体发光器件。 半导体发光器件包括导电衬底，设置在导电衬底上的p型电极，设置在p型电极上的透明电极层，发光结构，包括p型半导体层，有源层和 依次层叠在透明电极层上的n型半导体层和配置在n型半导体层上的n型电极。 发光结构设置在透明电极层的顶部中间，以允许发光结构的一侧与透明电极层的边缘隔开。 透明电极层在发光结构的外部具有不平坦的表面。

公开(公告)号：US08039281B2

公开(公告)日：2011-10-18

申请号：US12880809

申请日：2010-09-13

申请人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/36

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

公开(公告)号：US20110175113A1

公开(公告)日：2011-07-21

申请号：US13005661

申请日：2011-01-13

申请人： Duk-Kyu BAE ,  Hwan-Kuk YUH

发明人： Duk-Kyu BAE ,  Hwan-Kuk YUH

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/42

摘要： Provided is a semiconductor light emitting device having an improved electrode structure for uniform current density and high brightness. According to the present invention, an light emitting device can have an electrode structure configured to spread a current uniformly and efficiently throughout the entire area of the light emitting device. Therefore, current density distribution can be more uniform in the light emitting device. End parts of second conductive type auxiliary electrodes are gradually shortened in length in a direction away from a first conductive type electrode pad so that a current flowing around the first conductive type electrode can be uniform to increase optical conversion efficiency and lower a driving voltage.

摘要翻译： 提供了具有改善的电流结构的半导体发光器件，其电流密度均匀且亮度高。 根据本发明，发光器件可以具有电极结构，其被配置为在发光器件的整个区域均匀且有效地扩展电流。 因此，在发光器件中电流密度分布可以更均匀。 第二导电型辅助电极的端部沿着远离第一导电型电极焊盘的方向的长度逐渐缩短，使得围绕第一导电型电极流动的电流可以均匀以提高光转换效率并降低驱动电压。