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公开(公告)号:US07743731B2
公开(公告)日:2010-06-29
申请号:US11392949
申请日:2006-03-30
申请人: Takashi Enomoto , Masaaki Hagihara , Akiteru Ko , Shinji Hamamoto , Masafumi Urakawa , Arthur H. Laflamme, Jr. , Edward Heller
发明人: Takashi Enomoto , Masaaki Hagihara , Akiteru Ko , Shinji Hamamoto , Masafumi Urakawa , Arthur H. Laflamme, Jr. , Edward Heller
IPC分类号: C23C16/50 , C23C16/505 , C23C16/509 , C23C16/06 , C23C16/22
CPC分类号: H01L21/32137 , H01J37/3244 , H01J37/32449 , H01L21/32136 , H01L21/67069
摘要: A gas injection system includes a diffuser to distribute a process gas in a processing chamber. The gas injection system may be utilized in a polysilicon etching system involving corrosive process gases.
摘要翻译: 气体注入系统包括用于在处理室中分配处理气体的扩散器。 气体注入系统可以用于涉及腐蚀性工艺气体的多晶硅蚀刻系统中。
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公开(公告)号:US20070235136A1
公开(公告)日:2007-10-11
申请号:US11392949
申请日:2006-03-30
申请人: Takashi Enomoto , Masaaki Hagihara , Akiteru Ko , Shinji Hamamoto , Masafumi Urakawa , Arthur H. Laflamme , Edward Heller
发明人: Takashi Enomoto , Masaaki Hagihara , Akiteru Ko , Shinji Hamamoto , Masafumi Urakawa , Arthur H. Laflamme , Edward Heller
IPC分类号: H01L21/306 , C23F1/00
CPC分类号: H01L21/32137 , H01J37/3244 , H01J37/32449 , H01L21/32136 , H01L21/67069
摘要: A gas injection system includes a diffuser to distribute a process gas in a processing chamber. The gas injection system may be utilized in a polysilicon etching system involving corrosive process gases.
摘要翻译: 气体注入系统包括用于在处理室中分配处理气体的扩散器。 气体注入系统可以用于涉及腐蚀性工艺气体的多晶硅蚀刻系统中。
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