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    SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique
    1.
    发明授权
    SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique 有权
    通过逐步周期扰动技术生长的具有降低的位错密度的SiC单晶

    公开(公告)号：US08871025B2

    公开(公告)日：2014-10-28

    申请号：US12441583

    申请日：2007-09-27

    申请人： Avinash Gupta ,  Utpal K. Chakrabarti ,  Jihong Chen ,  Edward Semenas ,  Ping Wu

    发明人： Avinash Gupta ,  Utpal K. Chakrabarti ,  Jihong Chen ,  Edward Semenas ,  Ping Wu

    IPC分类号： C30B28/14 ,  C30B29/36 ,  C30B23/00

    CPC分类号： C30B29/36 ,  C30B23/002 ,  C30B23/005

    摘要： In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.

    摘要翻译： 在晶体生长方法中，种子晶体8和源材料4以生长坩埚6内的间隔关系设置。然后在其中建立用于在生长坩埚6中生长晶体14的起始条件。 起始条件包括：生长坩埚6内的合适气体，生长坩埚6内部的气体的适当压力，以及生长坩埚6中适当的温度，其使得源材料4升华并经由温度梯度 在生长坩埚6中，升华的源材料析出的晶种8。 在生长坩埚6内生长晶体14期间，生长坩埚6内的至少一个以下生长条件间歇性地变化：生长坩埚6中的气体，生长坩埚中的气体压力 6，以及生长坩埚6中的温度。

    FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW
    2.
    发明申请
    FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW 失效
    具有低WARP和BOW的SIC基板的制造

    公开(公告)号：US20100180814A1

    公开(公告)日：2010-07-22

    申请号：US12664974

    申请日：2008-06-26

    申请人： Ping Wu ,  Ilya Zwieback ,  Avinesh K. Gupta ,  Edward Semenas

    发明人： Ping Wu ,  Ilya Zwieback ,  Avinesh K. Gupta ,  Edward Semenas

    IPC分类号： C30B33/02 ,  C30B23/00

    CPC分类号： C30B29/36 ,  C30B23/002 ,  C30B23/066 ,  C30B33/02

    摘要： A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.

    摘要翻译： 制造SiC单晶的方法包括（a）在温度梯度存在下在晶种上生长SiC单晶的物理蒸气转移（PVT），其中SiC单晶的早期生长部分在 比SiC单晶的稍后生长部分的温度低。 一旦生长，SiC单晶在反向温度梯度的存在下退火，其中SiC单晶的后期生长部分处于比SiC单晶的早期生长部分更低的温度。

    Fabrication of SiC substrates with low warp and bow
    4.
    发明授权
    Fabrication of SiC substrates with low warp and bow 失效
    具有低经向和弓形的SiC衬底的制造

    公开(公告)号：US08449671B2

    公开(公告)日：2013-05-28

    申请号：US12664974

    申请日：2008-06-26

    申请人： Ping Wu ,  Ilya Zwieback ,  Avinesh K. Gupta ,  Edward Semenas

    发明人： Ping Wu ,  Ilya Zwieback ,  Avinesh K. Gupta ,  Edward Semenas

    IPC分类号： C30B23/00

    CPC分类号： C30B29/36 ,  C30B23/002 ,  C30B23/066 ,  C30B33/02

    摘要： A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.

    摘要翻译： 制造SiC单晶的方法包括（a）在温度梯度存在下在晶种上生长SiC单晶的物理蒸气转移（PVT），其中SiC单晶的早期生长部分在 比SiC单晶的稍后生长部分的温度低。 一旦生长，SiC单晶在反向温度梯度的存在下退火，其中SiC单晶的后期生长部分处于比SiC单晶的早期生长部分更低的温度。

    SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-WISE PERIODIC PERTURBATION TECHNIQUE
    5.
    发明申请
    SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-WISE PERIODIC PERTURBATION TECHNIQUE 有权
    SIC单晶体具有降低的偏心密度，由步进周期性刺激技术

    公开(公告)号：US20100031877A1

    公开(公告)日：2010-02-11

    申请号：US12441583

    申请日：2007-09-27

    申请人： Avinash Gupta ,  Utpal K. Chakrabarti ,  Jihong Chen ,  Edward Semenas ,  Ping Wu

    发明人： Avinash Gupta ,  Utpal K. Chakrabarti ,  Jihong Chen ,  Edward Semenas ,  Ping Wu

    IPC分类号： C30B23/02

    CPC分类号： C30B29/36 ,  C30B23/002 ,  C30B23/005

    摘要： In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.

    摘要翻译： 在晶体生长方法中，种子晶体8和源材料4以生长坩埚6内的间隔关系设置。然后在其中建立用于在生长坩埚6中生长晶体14的起始条件。 起始条件包括：生长坩埚6内的合适气体，生长坩埚6内部的气体的适当压力，以及生长坩埚6中适当的温度，其使得源材料4升华并经由温度梯度 在生长坩埚6中，升华的源材料析出的晶种8。 在生长坩埚6内生长晶体14期间，生长坩埚6内的至少一个以下生长条件间歇性地变化：生长坩埚6中的气体，生长坩埚中的气体压力 6，以及生长坩埚6中的温度。

    Guided diameter SiC sublimation growth with multi-layer growth guide
    7.
    发明授权
    Guided diameter SiC sublimation growth with multi-layer growth guide 有权
    引导直径SiC升华生长与多层生长指导

    公开(公告)号：US08313720B2

    公开(公告)日：2012-11-20

    申请号：US12522549

    申请日：2008-01-15

    申请人： Ilya Zwieback ,  Avinash K. Gupta ,  Edward Semenas ,  Thomas E. Anderson

    发明人： Ilya Zwieback ,  Avinash K. Gupta ,  Edward Semenas ,  Thomas E. Anderson

    IPC分类号： C01B31/36

    CPC分类号： C30B29/36 ,  C30B23/005 ,  C30B35/00

    摘要： In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the crucible. The growth guide has an inner layer that defines at least part of an opening in the growth guide and an outer layer that supports the inner layer in the crucible. The opening faces the source material with the seed crystal positioned at an end of the opening opposite the source material. The inner layer is formed from a first material having a higher thermal conductivity than the second, different material forming the outer layer. The source material is sublimation grown on the seed crystal in the growth crucible via the opening in the growth guide to thereby form the SiC boule on the seed crystal.

    摘要翻译： 在SiC锭的生长中，在坩埚的底部装载有SiC源材料的坩埚和坩埚顶部的SiC晶种的生长坩埚内部设置生长引导件。 生长引导件具有限定生长引导件中的开口的至少一部分的内层和支撑坩埚中的内层的外层。 开口面向源材料，晶种位于与源材料相对的开口端。 内层由具有比形成外层的第二不同材料更高的导热性的第一材料形成。 源材料通过生长引导件中的开口在生长坩埚中的晶种上生长升华，从而在晶种上形成SiC棒。

    Reduction of carbon inclusions in sublimation grown SiC single crystals
    9.
    发明申请
    Reduction of carbon inclusions in sublimation grown SiC single crystals 失效
    在升华生长的SiC单晶中减少碳夹杂物

    公开(公告)号：US20080115719A1

    公开(公告)日：2008-05-22

    申请号：US11904593

    申请日：2007-09-27

    申请人： Avinash K. Gupta ,  Edward Semenas ,  Ilya Zwieback

    发明人： Avinash K. Gupta ,  Edward Semenas ,  Ilya Zwieback

    IPC分类号： C30B25/00

    CPC分类号： C30B29/36 ,  C30B23/00

    摘要： In a method of SiC single crystal growth, a SiC single crystal seed and polycrystalline SiC source material are provided in spaced relation inside of a graphite growth crucible along with at least one compound capable of forming SiO gas in the growth crucible. The growth crucible is heated whereupon the gaseous SiO forms and reacts with carbon in the growth crucible thereby avoiding the introduction of carbon into the SiC single crystal before and during the growth thereof and the SiC source material vaporizes and is transported via a temperature gradient in the growth crucible to the seed crystal where it precipitates and forms a SiC single crystal.

    摘要翻译： 在SiC单晶生长方法中，SiC石墨晶种和多晶SiC源材料与石墨生长坩埚中的至少一种能够在生长坩埚中形成SiO气体的化合物一起间隔地设置。 加热生长坩埚，由此气态SiO形成并与生长坩埚中的碳反应，从而避免在生长坩埚之前和期间将碳引入SiC单晶中，并且SiC源材料蒸发并通过温度梯度传送 生长坩埚至晶种沉淀并形成SiC单晶。

    Method of and system for forming SiC crystals having spatially uniform doping impuritites
    10.
    发明申请
    Method of and system for forming SiC crystals having spatially uniform doping impuritites 有权
    用于形成具有空间均匀掺杂稀土元素的SiC晶体的方法和系统

    公开(公告)号：US20060243984A1

    公开(公告)日：2006-11-02

    申请号：US11405368

    申请日：2006-04-17

    申请人： Avinash Gupta ,  Edward Semenas ,  Ilya Zwieback ,  Donovan Barrett ,  Andrew Souzis

    发明人： Avinash Gupta ,  Edward Semenas ,  Ilya Zwieback ,  Donovan Barrett ,  Andrew Souzis

    IPC分类号： H01L31/0312

    CPC分类号： C30B29/36 ,  C30B23/00 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1016 ,  Y10T117/108

    摘要： In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant, is also provided. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.

    摘要翻译： 在物理蒸气传输方法和系统中，提供了充满源材料的生长室和间隔开的晶种。 至少一个胶囊具有在其内部和外部之间延伸的至少一个毛细管，其中胶囊的内部充有掺杂剂。 每个胶囊安装在生长室中。 通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。