公开(公告)号：US06307217B1

公开(公告)日：2001-10-23

申请号：US08181545

申请日：1994-01-14

申请人： Shuji Ikeda ,  Satoshi Meguro ,  Kyoichiro Asayama ,  Eri Fujita ,  Koichiro Ishibashi ,  Toshiro Aoto ,  Sadayuki Morita ,  Atsuyoshi Koike ,  Masayuki Kojima ,  Yasuo Kiguchi ,  Kazuyuki Suko ,  Fumiyuki Kanai ,  Naotaka Hashimoto ,  Toshiaki Yamanaka

发明人： Shuji Ikeda ,  Satoshi Meguro ,  Kyoichiro Asayama ,  Eri Fujita ,  Koichiro Ishibashi ,  Toshiro Aoto ,  Sadayuki Morita ,  Atsuyoshi Koike ,  Masayuki Kojima ,  Yasuo Kiguchi ,  Kazuyuki Suko ,  Fumiyuki Kanai ,  Naotaka Hashimoto ,  Toshiaki Yamanaka

IPC分类号： H01L2972

CPC分类号： H01L27/11 ,  H01L27/1104 ,  Y10S257/903 ,  Y10S257/904

摘要： A static random access memory comprising memory cells each composed of transfer MISFETs controlled by word lines and of a flip-flop circuit made of driver MISFETs and load MISFETs. The top of the load MISFETs is covered with supply voltage lines so that capacitor elements of a stacked structure are formed between the gate electrodes of the load MISFETs and the supply voltage lines.

摘要翻译： 一种静态随机存取存储器，包括由字线控制的转移MISFET和由驱动器MISFET和负载MISFET构成的触发电路组成的存储单元。 负载MISFET的顶部覆盖有电源电压线，使得层叠结构的电容器元件形成在负载MISFET的栅电极和电源电压线之间。

公开(公告)号：US20130014787A1

公开(公告)日：2013-01-17

申请号：US13544207

申请日：2012-07-09

申请人： Shingo URATA ,  Akihiko TAKI ,  Hiroki TSUJIKAWA ,  Eri FUJITA ,  Yoshiyuki FUJITANI

发明人： Shingo URATA ,  Akihiko TAKI ,  Hiroki TSUJIKAWA ,  Eri FUJITA ,  Yoshiyuki FUJITANI

IPC分类号： B08B3/00

CPC分类号： H01L21/31133 ,  H01L21/6708

摘要： A substrate processing apparatus supplies a resist stripping solution, formed by mixing sulfuric acid and a hydrogen peroxide solution, to a surface of a substrate. The substrate processing apparatus includes a nozzle that discharges the resist stripping solution toward the substrate, a hydrogen peroxide solution supply passage through which the hydrogen peroxide solution flows toward the nozzle, a plurality of sulfuric acid supply passages respectively connected to a plurality of mixing positions along the hydrogen peroxide solution supply passage that differ in flow passage length to the nozzle, and a sulfuric acid supply passage selecting unit that introduces the sulfuric acid from a sulfuric acid supply source to a sulfuric acid supply passage selected from among the plurality of sulfuric acid supply passages.

摘要翻译： 基板处理装置将通过将硫酸和过氧化氢溶液混合形成的抗蚀剂剥离溶液提供到基板的表面。 基板处理装置包括将抗蚀剂剥离溶液朝向基板排出的喷嘴，过氧化氢溶液朝向喷嘴流动的过氧化氢溶液供给路径，分别与多个混合位置连接的多个硫酸供给通路 与喷嘴不同的流路长度的过氧化氢溶液供给流路，以及从硫酸供给源将硫酸从硫酸供给路径中选出的硫酸供给路径导入的硫酸供给路径选择部， 段落。

公开(公告)号：US06512245B2

公开(公告)日：2003-01-28

申请号：US09859045

申请日：2001-05-17

申请人： Shuji Ikeda ,  Satoshi Meguro ,  Kyoichiro Asayama ,  Eri Fujita ,  Koichiro Ishibashi ,  Toshiro Aoto ,  Sadayuki Morita ,  Atsuyoshi Koike ,  Masayuki Kojima ,  Yasuo Kiguchi ,  Kazuyuki Suko ,  Fumiyuki Kanai ,  Naotaka Hashimoto ,  Toshiaki Yamanaka

发明人： Shuji Ikeda ,  Satoshi Meguro ,  Kyoichiro Asayama ,  Eri Fujita ,  Koichiro Ishibashi ,  Toshiro Aoto ,  Sadayuki Morita ,  Atsuyoshi Koike ,  Masayuki Kojima ,  Yasuo Kiguchi ,  Kazuyuki Suko ,  Fumiyuki Kanai ,  Naotaka Hashimoto ,  Toshiaki Yamanaka

IPC分类号： H01L2972

CPC分类号： H01L27/11 ,  H01L27/1104 ,  Y10S257/903 ,  Y10S257/904

摘要： A static random access memory comprising memory cells each composed of transfer MISFETs controlled by word lines and of a flip-flop circuit made of driver MISFETs and load MISFETs. The top of the load MISFETs is covered with supply voltage lines so that capacitor elements of a stacked structure are formed between the gate electrodes of the load MISFETs and the supply voltage lines.

摘要翻译： 一种静态随机存取存储器，包括由字线控制的转移MISFET和由驱动器MISFET和负载MISFET构成的触发电路组成的存储单元。 负载MISFET的顶部覆盖有电源电压线，使得层叠结构的电容器元件形成在负载MISFET的栅电极和电源电压线之间。