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    Process for transferring a thin-film structure to a substrate
    3.
    发明授权
    Process for transferring a thin-film structure to a substrate 失效
    将薄膜结构转印到基板的方法

    公开(公告)号：US06183588B2

    公开(公告)日：2001-02-06

    申请号：US09460488

    申请日：1999-12-14

    申请人： Kimberley A. Kelly ,  Ashwani K. Malhotra ,  Eric D. Perfecto ,  Roy Yu

    发明人： Kimberley A. Kelly ,  Ashwani K. Malhotra ,  Eric D. Perfecto ,  Roy Yu

    IPC分类号： B32B3100

    CPC分类号： B32B43/00 ,  B32B2310/0843 ,  B32B2311/00 ,  H01L21/6835 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/3025 ,  H05K3/007 ,  H05K3/025 ,  H05K3/28 ,  H05K3/4614 ,  H05K3/4623 ,  H05K3/467 ,  H05K2201/09527 ,  H05K2201/10666 ,  H05K2203/016 ,  H05K2203/107 ,  Y10S156/922 ,  Y10S438/94 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T428/12528 ,  Y10T428/12583

    摘要： A process for fabricating and releasing a thin-film structure from a primary carrier for further processing. The thin-film structure is built on a metal interconnect disposed on a dielectric layer which, in turn, is deposited on a primary carrier. The thin-film structure and metal interconnect are released from the dielectric layer and primary carrier along a release interface defined between the metal interconnect and the dielectric film. Release is accomplished by disturbing the interface, either by laser ablation or dicing. The process of the present invention has at least three, specific applications: (1) the thin-film structure and metal interconnect can be released to yield a free-standing film; (2) the thin-film structure and metal interconnect can be laminated onto a permanent substrate (when building top-side down structures) and then released; and (3) the thin-film structure can be transferred to a secondary temporary carrier (when building top-side up structures) for further processing and testing, then transferred to a permanent substrate before releasing the thin-film structure and metal interconnect.

    摘要翻译： 用于从主载体制造和释放薄膜结构以进一步处理的工艺。 薄膜结构建立在设置在电介质层上的金属互连上，其又沉积在主载体上。 薄膜结构和金属互连通过限定在金属互连和电介质膜之间的释放界面从电介质层和初级载体释放。 通过激光烧蚀或切割来干扰界面来实现释放。 本发明的方法具有至少三个具体应用：（1）可以释放薄膜结构和金属互连以产生独立的膜; （2）薄膜结构和金属互连可以层压在永久性基板上（当构建顶部向下结构时）然后释放; （3）可以将薄膜结构转移到二次临时载体（当构建顶侧上部结构）进行进一步的加工和测试时，在释放薄膜结构和金属互连之前转移到永久基板。

    FLIP CHIP ASSEMBLY METHOD EMPLOYING POST-CONTACT DIFFERENTIAL HEATING
    7.
    发明申请
    FLIP CHIP ASSEMBLY METHOD EMPLOYING POST-CONTACT DIFFERENTIAL HEATING 失效
    使用后接触差分加热的片状芯片组装方法

    公开(公告)号：US20120217287A1

    公开(公告)日：2012-08-30

    申请号：US13036086

    申请日：2011-02-28

    申请人： Rajneesh Kumar ,  Jae-Woong Nah ,  Eric D. Perfecto

    发明人： Rajneesh Kumar ,  Jae-Woong Nah ,  Eric D. Perfecto

    IPC分类号： B23K31/02 ,  B23K1/20

    CPC分类号： B23K1/0016

    摘要： A first substrate mounted to a bonder head and a second substrate mounted to a base plate are held at different elevated temperatures at the time of bonding that provide a substantially matched thermal expansion between the second substrate and the first substrate relative to room temperature. Further, the temperature of the solder material portions and the second substrate is raised at least up to the melting temperature after contact. The distance between the first substrate and the second substrate can be modulated to enhance the integrity of solder joints. Once the distance is at an optimum, the bonder head is detached, and the bonded structure is allowed to cool to form a bonded flip chip structure. Alternately, the bonder head can control the cooling rate of solder joints by being attached to the chip during cooling step.

    摘要翻译： 安装到接合头的第一衬底和安装到基板的第二衬底在接合时被保持在不同的升高的温度，从而相对于室温在第二衬底和第一衬底之间提供基本匹配的热膨胀。 此外，焊接材料部分和第二基板的温度至少升高到接触后的熔融温度。 第一基板和第二基板之间的距离可被调制以增强焊点的完整性。 一旦该距离处于最佳状态，就将分离头拆下，并使粘结结构冷却以形成结合的倒装芯片结构。 或者，焊接头可以在冷却步骤期间通过附接到芯片来控制焊点的冷却速度。