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公开(公告)号：US07692897B2
公开(公告)日：2010-04-06
申请号：US12048306
申请日：2008-03-14
Applicant: Harry S. Edelman , Bradley H. Miller , Eric L. Granstrom
Inventor： Harry S. Edelman , Bradley H. Miller , Eric L. Granstrom
CPC classification number: G11B5/33 , G11B5/127 , G11B5/3909 , G11B5/3967 , G11B5/40 , G11B2005/3996
Abstract: A transducing head includes a substrate, a writer positioned upon the substrate, and a reader positioned adjacent the writer. The writer is in electrical contact with the substrate.
Abstract translation: 转换头包括基板，位于基板上的写入器和位于写入器附近的读取器。 作者与基板电接触。
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公开(公告)号：US20080158732A1
公开(公告)日：2008-07-03
申请号：US12048306
申请日：2008-03-14
Applicant: Harry S. Edelman , Bradley H. Miller , Eric L. Granstrom
Inventor： Harry S. Edelman , Bradley H. Miller , Eric L. Granstrom
IPC: G11B5/10
CPC classification number: G11B5/33 , G11B5/127 , G11B5/3909 , G11B5/3967 , G11B5/40 , G11B2005/3996
Abstract: A transducing head includes a substrate, a writer positioned upon the substrate, and a reader positioned adjacent the writer. The writer is in electrical contact with the substrate.
Abstract translation: 转换头包括基板，位于基板上的写入器和位于写入器附近的读取器。 作者与基板电接触。
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3.发明授权
公开(公告)号：US07142398B2
公开(公告)日：2006-11-28
申请号：US10210608
申请日：2002-08-01
Applicant: Eric L. Granstrom , Ned Tabat
Inventor： Eric L. Granstrom , Ned Tabat
IPC: G11G51/127
CPC classification number: G11B5/3903 , G11B5/3103 , G11B5/3106 , G11B5/40 , G11B5/60
Abstract: A magnetoresistive head assembly of the present invention includes a magnetoresistive sensor and an electrostatic discharge and electrical overstress protection circuit. The magnetoresistive sensor is capable of having conducted therethrough oppositely-directed first direction current and second direction current. The magnetoresistive sensor is sensitive to first direction currents in excess of a first predetermined value and to second direction currents in excess of a second predetermined value different than the first predetermined value. The electrostatic discharge and electrical overstress protection circuit is electrically connected to the magnetoresistive sensor for preventing only those first direction currents greater than the first predetermined value from flowing though the magnetoresistive sensor and only those second direction currents greater than the second predetermined value from flowing through the magnetoresistive sensor.
Abstract translation: 本发明的磁阻头组件包括磁阻传感器和静电放电和电过载保护电路。 磁阻传感器能够穿过相反方向的第一方向电流和第二方向电流。 磁阻传感器对超过第一预定值的第一方向电流和超过不同于第一预定值的第二预定值的第二方向电流敏感。 静电放电和电过载保护电路电连接到磁阻传感器，用于仅防止大于第一预定值的那些第一方向电流流过磁阻传感器，并且只有那些大于第二预定值的第二方向电流流过 磁阻传感器
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公开(公告)号：US08500844B2
公开(公告)日：2013-08-06
申请号：US12991836
申请日：2009-05-07
Applicant: Valery Rosenband , Eric L. Granstrom , Lorenzo Mangolini
Inventor： Valery Rosenband , Eric L. Granstrom , Lorenzo Mangolini
CPC classification number: H01L31/1808 , B22F9/20 , B22F2998/10 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02601 , H01L21/02628 , Y02E10/50 , B22F1/0088 , B22F2001/0092
Abstract: A method of producing a powder of crystalline germanium.
Abstract translation: 一种生产结晶锗粉末的方法。
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公开(公告)号：US20100255349A1
公开(公告)日：2010-10-07
申请号：US12816967
申请日：2010-06-16
Applicant: Zheng Gao , Brian W. Karr , Song Xue , Eric L. Granstrom , Khuong T. Tran , Yi X. Li
Inventor： Zheng Gao , Brian W. Karr , Song Xue , Eric L. Granstrom , Khuong T. Tran , Yi X. Li
IPC: G11B5/39
CPC classification number: G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , Y10T428/1114 , Y10T428/1121
Abstract: A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 Ω·μm2.
Abstract translation: 磁传感器包括具有在第一磁性部分和第二磁性部分之间的第一磁性部分，第二磁性部分和阻挡层的传感器堆叠。 第一磁性部分和第二磁性部分中的至少一个包括多层结构，其具有与阻挡层相邻的具有正的磁致伸缩的第一磁性层，第二磁性层以及第一磁性层和第二磁性层之间的中间层 层。 当磁传感器的电阻面积（RA）积为约1.0＆OHgr·μm2时，磁传感器具有至少约80％的MR比。
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公开(公告)号：US07800868B2
公开(公告)日：2010-09-21
申请号：US11305778
申请日：2005-12-16
Applicant: Zheng Gao , Brian W. Karr , Song Xue , Eric L. Granstrom , Khuong T. Tran , Yi X. Li
Inventor： Zheng Gao , Brian W. Karr , Song Xue , Eric L. Granstrom , Khuong T. Tran , Yi X. Li
CPC classification number: G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , Y10T428/1114 , Y10T428/1121
Abstract: A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 Ω·μm2.
Abstract translation: 磁传感器包括具有在第一磁性部分和第二磁性部分之间的第一磁性部分，第二磁性部分和阻挡层的传感器堆叠。 第一磁性部分和第二磁性部分中的至少一个包括多层结构，其具有与阻挡层相邻的具有正的磁致伸缩的第一磁性层，第二磁性层以及第一磁性层和第二磁性层之间的中间层 层。 当磁传感器的电阻面积（RA）积为约1.0＆OHgr·μm2时，磁传感器具有至少约80％的MR比。
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公开(公告)号：US07929259B2
公开(公告)日：2011-04-19
申请号：US12816967
申请日：2010-06-16
Applicant: Zheng Gao , Brian W. Karr , Song Xue , Eric L. Granstrom , Khuong T. Tran , Yi X. Li
Inventor： Zheng Gao , Brian W. Karr , Song Xue , Eric L. Granstrom , Khuong T. Tran , Yi X. Li
IPC: G11B5/39
CPC classification number: G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , Y10T428/1114 , Y10T428/1121
Abstract: A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 Ω·μm2.
Abstract translation: 磁传感器包括具有在第一磁性部分和第二磁性部分之间的第一磁性部分，第二磁性部分和阻挡层的传感器堆叠。 第一磁性部分和第二磁性部分中的至少一个包括多层结构，其具有与阻挡层相邻的具有正的磁致伸缩的第一磁性层，第二磁性层以及第一磁性层和第二磁性层之间的中间层 层。 当磁传感器的电阻面积（RA）积为约1.0＆OHgr·μm2时，磁传感器具有至少约80％的MR比。
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公开(公告)号：US07719802B2
公开(公告)日：2010-05-18
申请号：US10668437
申请日：2003-09-23
Applicant: Michael C. Kautzky , David J. Larson , Bradley H. Miller , Eric W. Singleton , Dimitar V. Dimitrov , Eric L. Granstrom , Song S. Xue
Inventor： Michael C. Kautzky , David J. Larson , Bradley H. Miller , Eric W. Singleton , Dimitar V. Dimitrov , Eric L. Granstrom , Song S. Xue
IPC: G11B5/33
CPC classification number: G11B5/3903 , G11B5/3909 , G11B2005/0018
Abstract: A magnetic sensor having adjustable electrical dimensions, such as electrical read width and electrical stripe height, is disclosed. The magnetic sensor includes a sensor stack with one or more bias electrodes positioned with respect to the sensor stack. The electrical width or electrical stripe height of the sensor stack is a function of a voltage applied to the bias electrodes. The electric field produced by the bias electrodes alters the electrical profile of the magnetoresistive device.
Abstract translation: 公开了一种具有可调整的电气尺寸的磁传感器，例如电读宽度和电条高度。 磁传感器包括传感器堆叠，其具有相对于传感器堆叠定位的一个或多个偏置电极。 传感器堆叠的电气宽度或电气条纹高度是施加到偏置电极的电压的函数。 由偏置电极产生的电场改变磁阻器件的电气轮廓。
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公开(公告)号：US07248446B2
公开(公告)日：2007-07-24
申请号：US10306384
申请日：2002-11-27
Applicant: Eric L. Granstrom
Inventor： Eric L. Granstrom
IPC: G11B5/31
CPC classification number: B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F41/306 , H01F41/307
Abstract: A magnetoresistive element has two magnetic layers and a nonmagnetic middle layer having organic molecules disposed between the two magnetic layers. The middle layer is thinner than 5 nm (50 Å). The magnetoresistive element exhibits a magnetoresistive effect as a function of the relative alignment of magnetizations of the first and the second magnetic layers and can be used in a magnetoresistive sensor in the based on GMR or TMR.
Abstract translation: 磁阻元件具有两个磁性层和在两个磁性层之间设置有有机分子的非磁性中间层。 中间层比5nm（50）薄。 磁阻元件作为第一和第二磁性层的磁化的相对取向的函数呈现磁阻效应，并且可以用于基于GMR或TMR的磁阻传感器中。
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公开(公告)号：US20140255661A1
公开(公告)日：2014-09-11
申请号：US14124809
申请日：2012-06-07
Applicant: Joseph Masrud , Lorenzo Mangolini , Eric L. Granstrom , Arkady Garbar , Dmitry Lekhtman , Dov Zamir
Inventor： Joseph Masrud , Lorenzo Mangolini , Eric L. Granstrom , Arkady Garbar , Dmitry Lekhtman , Dov Zamir
CPC classification number: B05D1/28 , B05D1/322 , B05D3/12 , B05D5/02 , B05D5/12 , B05D2201/02 , B05D2350/60 , C08K2003/0806 , C09D5/24 , C09D7/61 , C09D7/67 , C09D11/52 , H05K1/097 , H05K3/1275 , Y10T428/24802
Abstract: Methods of producing patterned articles using a composition that includes a non-volatile component in a volatile liquid carrier, where the liquid carrier is in the form of an emulsion comprising a continuous phase and a second phase in the form of domains dispersed in the continuous phase.
Abstract translation: 使用包含挥发性液体载体中的非挥发性成分的组合物生产图案化制品的方法，其中液体载体为包含分散在连续相中的结构域的连续相和第二相的乳液形式 。
