公开(公告)号：UST105402I4

公开(公告)日：1985-05-07

申请号：US603263

申请日：1984-04-23

Applicant: Jagtar S. Basi ,  Eric Mendel

Inventor： Jagtar S. Basi ,  Eric Mendel

IPC: B24B37/04

CPC classification number: B24B37/04

Abstract: A method for the chemical-mechanical polishing of amorphous aluminum oxide surfaces to a high degree of perfection is described. The aluminum oxide surfaces are continuously wetted with a water-citric acid slurry containing a soft abrasive material. The continuously wiping of the aluminum oxide surface is accomplished with a firm surface using pressure while maintaining a relative movement between the aluminum oxide surface and the firm surface to remove the water reacted aluminum oxide product from the high points of the aluminum oxide surface. This method is continued until a high degree of perfection of the surface is accomplished. The slurry is typically composed of colloidal silicon dioxide dispersed in water containing citric acid.

公开(公告)号：US4435247A

公开(公告)日：1984-03-06

申请号：US473938

申请日：1983-03-10

Applicant: Jagtar S. Basi ,  Eric Mendel

Inventor： Jagtar S. Basi ,  Eric Mendel

IPC: C23F1/00 ,  B24B1/00 ,  B24B37/00 ,  C04B41/80 ,  C09K3/14 ,  C23F3/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC classification number: B24B1/00 ,  C09K3/1463

Abstract: A method for the chemical-mechanical polishing of titanium carbide surfaces to a high degree of perfection is described. The titanium carbide surfaces are continuously wetted with a water slurry containing a soft abrasive material. The continuously wiping of the titanium carbide surface is accomplished with a firm surface using pressure while maintaining a relative movement between the titanium carbide surface and the firm surface to remove the water reacted titanium carbide product from the high points of the titanium carbide surface. This method is continued until a high degree of perfection of the surface is accomplished. The slurry is typically composed of colloidal silicon dioxide dispersed in water. The titanium carbide surface can also include an aluminum oxide component. Where aluminum oxide is present it is preferred to have about 60 to 80% aluminum oxide and 40 to 20% titanium carbide by weight in the surface structure.

Abstract translation: 对碳化钛表面的化学机械抛光方法进行了高度的完善。 碳化钛表面用含有软磨料的水浆液连续润湿。 碳化钛表面的连续擦拭是通过使用压力的坚固表面实现的，同时保持碳化钛表面和坚固表面之间的相对运动，以从碳化钛表面的高点去除水反应的碳化钛产品。 该方法继续进行，直到完成表面的高度完美。 浆料通常由分散在水中的胶体二氧化硅组成。 碳化钛表面还可以包括氧化铝组分。 在存在氧化铝的情况下，优选在表面结构中具有约60至80重量％的氧化铝和40至20重量％的碳化钛。

公开(公告)号：US4944836A

公开(公告)日：1990-07-31

申请号：US791860

申请日：1985-10-28

Applicant: Klaus D. Beyer ,  William L. Guthrie ,  Stanley R. Makarewicz ,  Eric Mendel ,  William J. Patrick ,  Kathleen A. Perry ,  William A. Pliskin ,  Jacob Riseman ,  Paul M. Schaible ,  Charles L. Standley

Inventor： Klaus D. Beyer ,  William L. Guthrie ,  Stanley R. Makarewicz ,  Eric Mendel ,  William J. Patrick ,  Kathleen A. Perry ,  William A. Pliskin ,  Jacob Riseman ,  Paul M. Schaible ,  Charles L. Standley

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/304 ,  H01L21/31053 ,  H01L21/32134 ,  H01L21/7684

Abstract: A method is disclosed for producing coplanar metal/insulator films on a substrate according to a chem-mech polishing technique. In one example, a substrate having a patterned insulating layer of dielectric material thereon, is coated with a layer of metal. The substrate is then placed in a parallel polisher and the metal is removed elsewhere except in the holes where it is left intact. This is made possible through the use of an improved selective slurry which removes the metal much faster than the dielectric material. The insulating layer may then be used as an automatic etch stop barrier.In a second example a substrate having a patterned metallic layer is coated with an insulating layer and then subjected to chem-mech polishing. The structure is coplanarized by the chem-mech removal of the insulating material from the high points of the structure at a faster rate than from the lower points. Optional etch stop layers also may be used.

Abstract translation: 公开了一种根据化学机械抛光技术在基底上产生共面金属/绝缘体膜的方法。 在一个示例中，具有其上的介电材料的图案化绝缘层的衬底被涂覆有金属层。 然后将基板放置在平行的抛光机中，并将金属除去在其中保持完整的孔中除去。 这通过使用改进的选择性浆料成为可能，其比电介质材料更快地除去金属。 然后可以将绝缘层用作自动蚀刻停止屏障。 在第二实施例中，具有图案化金属层的基板涂覆有绝缘层，然后进行化学研磨。 该结构通过从结构的高点以比从较低点更快的速率化学去除绝缘材料而被共面化。 也可以使用可选的蚀刻停止层。

公开(公告)号：US4671851A

公开(公告)日：1987-06-09

申请号：US791861

申请日：1985-10-28

Applicant: Klaus D. Beyer ,  James S. Makris ,  Eric Mendel ,  Karen A. Nummy ,  Seiki Ogura ,  Jacob Riseman ,  Nivo Rovedo

Inventor： Klaus D. Beyer ,  James S. Makris ,  Eric Mendel ,  Karen A. Nummy ,  Seiki Ogura ,  Jacob Riseman ,  Nivo Rovedo

IPC: H01L21/76 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/74 ,  H01L21/762 ,  H01L21/763

CPC classification number: H01L21/763 ,  H01L21/31053 ,  H01L21/743 ,  H01L21/76202

Abstract: A chemical-mechanical (chem-mech) method for removing SiO.sub.2 protuberances at the surface of a silicon chip, such protuberances including "bird's heads". A thin etch stop layer of Si.sub.3 N.sub.4 is deposited onto the wafer surface, which is then chem-mech polished with a SiO.sub.2 water based slurry. The Si.sub.3 N.sub.4 acts as a polishing or etch stop barrier layer only on the planar portions of the wafer surface. The portions of the Si.sub.3 N.sub.4 layer located on the top and at the sidewalls of the "bird's heads" and the underlying SiO.sub.2 protuberances are removed to provide a substantially planar integrated structure.

Abstract translation: 用于去除硅片表面的SiO 2突起的化学机械（化学机械）方法，包括“鸟头”的突起。 将Si 3 N 4的薄的蚀刻停止层沉积在晶片表面上，然后用SiO 2水基浆料进行化学研磨。 Si 3 N 4仅在晶片表面的平面部分上用作抛光或蚀刻阻挡层。 位于“鸟头”顶部和侧壁处的Si 3 N 4层的部分和下面的SiO 2突起被去除以提供基本平坦的整体结构。

公开(公告)号：US4579760A

公开(公告)日：1986-04-01

申请号：US689732

申请日：1985-01-08

Applicant: James R. Hause ,  Eric Mendel

Inventor： James R. Hause ,  Eric Mendel

IPC: H01L21/304 ,  H01L21/306 ,  H01L29/06 ,  B32B3/02

CPC classification number: H01L21/02035 ,  H01L21/02019 ,  H01L21/30604 ,  H01L29/0657 ,  H01L2223/54493 ,  Y10T428/219 ,  Y10T428/2495

Abstract: A semiconductor wafer shape which when subjected to a simultaneous polishing of both wafer surfaces produces a wafer of superior flatness and surface finish, the said wafer having a diametral cross-sectional shape like that of a "dogbone" wherein the wafer is thinner in its medial region than it is in the peripheral region and has rounded edges, this shape resulting from a chemical thinning operation.

Abstract translation: 当对两个晶片表面进行同时抛光时，半导体晶片形状产生了优异的平坦度和表面光洁度的晶片，所述晶片具有类似于“狗骨”的直径横截面形状，其中晶片的内侧更薄 区域比周边区域具有圆形边缘，该形状由化学稀化操作产生。