公开(公告)号：US08426919B2

公开(公告)日：2013-04-23

申请号：US13096953

申请日：2011-04-28

申请人： David H. Wells ,  Eric R. Blomiley

发明人： David H. Wells ,  Eric R. Blomiley

IPC分类号： H01L21/00

CPC分类号： H01L29/1083 ,  H01L21/3221 ,  H01L27/108 ,  H01L27/10873 ,  H01L27/11 ,  H01L29/7833 ,  H01L29/7849 ,  H01L29/78648 ,  H01L2924/0002 ,  H01L2924/00

摘要： Some embodiments include formation of at least one cavity in a first semiconductor material, followed by epitaxially growing a second semiconductor material over the first semiconductor material and bridging across the at least one cavity. The cavity may be left open, or material may be provided within the cavity. The material provided within the cavity may be suitable for forming, for example, one or more of electromagnetic radiation interaction components, transistor gates, insulative structures, and coolant structures. Some embodiments include one or more of transistor devices, electromagnetic radiation interaction components, transistor devices, coolant structures, insulative structures and gas reservoirs.

摘要翻译： 一些实施例包括在第一半导体材料中形成至少一个空腔，随后在第一半导体材料上外延生长第二半导体材料并桥接跨越至少一个空腔。 空腔可以保持打开，或者可以在空腔内提供材料。 设置在空腔内的材料可适用于形成例如电磁辐射相互作用部件，晶体管栅极，绝缘结构和冷却剂结构中的一个或多个。 一些实施例包括晶体管器件，电磁辐射相互作用元件，晶体管器件，冷却剂结构，绝缘结构和气体储存器中的一个或多个。

公开(公告)号：US07517758B2

公开(公告)日：2009-04-14

申请号：US11256430

申请日：2005-10-20

申请人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

IPC分类号： H01L21/336

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66553 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/78642

摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成外延含硅材料的方法和形成垂直晶体管的方法。 在一个实施方案中，形成外延含硅材料的方法包括提供包括单晶材料的衬底。 单晶材料的第一部分向外暴露，而单晶材料的第二部分被掩蔽。 第一含硅层从第一部分的暴露的单晶材料而不是被掩蔽的第二部分的单晶材料外延生长。 在生长第一含硅层之后，单晶材料的第二部分被未掩蔽。 然后从第一含硅层和第二部分的未掩模的单晶材料外延生长第二含硅层。 考虑了其他方面和实现。

公开(公告)号：US20080233700A1

公开(公告)日：2008-09-25

申请号：US11724784

申请日：2007-03-15

申请人： Eric R. Blomiley ,  Joel A. Drewes ,  D.V. Nirmal Ramaswamy

发明人： Eric R. Blomiley ,  Joel A. Drewes ,  D.V. Nirmal Ramaswamy

IPC分类号： H01L21/336

CPC分类号： H01L21/823425 ,  H01L21/823481 ,  H01L27/10873 ,  H01L27/1203

摘要： The invention includes semiconductor processing methods in which openings are formed to extend into a semiconductor substrate, and the substrate is then annealed around the openings to form cavities. The substrate is etched to expose the cavities, and the cavities are substantially filled with insulative material. The semiconductor substrate having the filled cavities therein can be utilized as a semiconductor-on-insulator-type structure, and transistor devices can be formed to be supported by the semiconductor material and to be over the cavities. In some aspects, the transistor devices have channel regions over the filled cavities, and in other aspects the transistor devices have source/drain regions over the filled cavities. The transistor devices can be incorporated into dynamic random access memory, and can be utilized in electronic systems.

摘要翻译： 本发明包括半导体处理方法，其中形成开口以延伸到半导体衬底中，然后将衬底围绕开口退火以形成空腔。 蚀刻衬底以暴露空腔，并且空腔基本上用绝缘材料填充。 其中具有填充空穴的半导体衬底可以用作绝缘体上半导体型结构，并且晶体管器件可以形成为被半导体材料支撑并且在空腔之上。 在一些方面，晶体管器件在填充腔体上具有沟道区域，在其它方面，晶体管器件在填充腔体上具有源极/漏极区域。 晶体管器件可以并入到动态随机存取存储器中，并且可以在电子系统中使用。

公开(公告)号：US07144779B2

公开(公告)日：2006-12-05

申请号：US10931924

申请日：2004-09-01

申请人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

IPC分类号： H01L21/336

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66553 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/78642

摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成外延含硅材料的方法和形成垂直晶体管的方法。 在一个实施方案中，形成外延含硅材料的方法包括提供包括单晶材料的衬底。 单晶材料的第一部分向外暴露，而单晶材料的第二部分被掩蔽。 第一含硅层从第一部分的暴露的单晶材料而不是被掩蔽的第二部分的单晶材料外延生长。 在生长第一含硅层之后，单晶材料的第二部分被未掩蔽。 然后从第一含硅层和第二部分的未掩模的单晶材料外延生长第二含硅层。 考虑了其他方面和实现。

公开(公告)号：US07132355B2

公开(公告)日：2006-11-07

申请号：US10932129

申请日：2004-09-01

申请人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

IPC分类号： H01L21/44

CPC分类号： H01L29/66787 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/78642

摘要： This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed monocrystalline material. The epitaxially grown silicon comprises at least one of carbon, germanium, and oxygen present at a total concentration of no greater than 1 atomic percent. In one implementation, the layer comprises a silicon germanium alloy comprising at least 1 atomic percent germanium, and further comprises at least one of carbon and oxygen at a total concentration of no greater than 1 atomic percent. Other aspects and implementations are contemplated.

公开(公告)号：US06987055B2

公开(公告)日：2006-01-17

申请号：US10755000

申请日：2004-01-09

申请人： Eric R. Blomiley ,  Gurtej S. Sandhu ,  Cem Basceri ,  Nirmal Ramaswamy

发明人： Eric R. Blomiley ,  Gurtej S. Sandhu ,  Cem Basceri ,  Nirmal Ramaswamy

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639

摘要： The invention includes a method for selective deposition of semiconductor material. A substrate is placed within a reaction chamber. The substrate comprises a first surface and a second surface. The first and second surfaces are exposed to a semiconductor material precursor under conditions in which growth of semiconductor material from the precursor comprises a lag phase prior to a growth phase, and under which it takes longer for the growth phase to initiate on the second surface than on the first surface. The exposure of the first and second surfaces is conducted for a time sufficient for the growth phase to occur on the first surface, but not long enough for the growth phase to occur on the second surface.

摘要翻译： 本发明包括半导体材料的选择性沉积方法。 将基板放置在反应室内。 基板包括第一表面和第二表面。 第一表面和第二表面在半导体材料前体暴露于其中来自前体的半导体材料的生长在生长阶段之前包含滞后期的条件下，并且在该阶段生长阶段在第二表面上开始需要更长时间比 在第一个表面。 进行第一表面和第二表面的曝光足够长的时间，以使生长阶段在第一表面上发生，但是不足以使生长相发生在第二表面上。

公开(公告)号：US08216935B2

公开(公告)日：2012-07-10

申请号：US12419807

申请日：2009-04-07

申请人： Eric R. Blomiley ,  Allen McTeer

发明人： Eric R. Blomiley ,  Allen McTeer

IPC分类号： H01L21/44

CPC分类号： H01L27/11521 ,  H01L21/28061 ,  H01L27/10873 ,  H01L29/4941 ,  H01L29/66545

摘要： A method of forming a transistor gate construction includes forming a gate stack comprising a sacrificial material received over conductive gate material. The gate stack has lateral sidewalls having insulative material received there-against. The sacrificial material is removed from being received over the conductive gate material to form a void space between the insulative material over the conductive gate material. Elemental tungsten is selectively deposited within the void space over the conductive gate material and a transistor gate construction forming there-from is formed there-from, and which has a conductive gate electrode which includes the conductive gate material and the elemental tungsten. The transistor gate might be used in NAND, DRAM, or other integrated circuitry.

摘要翻译： 一种形成晶体管栅极结构的方法包括形成包括在导电栅极材料上接收的牺牲材料的栅极堆叠。 栅极堆叠具有在其上接收绝缘材料的侧壁。 牺牲材料被从导电栅极材料上接收除去以在导电栅极材料之上的绝缘材料之间形成空隙。 元素钨选择性地沉积在导电栅极材料上的空隙空间内，并且在其中形成的晶体管栅极结构形成在其上，并具有包括导电栅极材料和元素钨的导电栅电极。 晶体管栅极可用于NAND，DRAM或其他集成电路。

公开(公告)号：US07531395B2

公开(公告)日：2009-05-12

申请号：US11035298

申请日：2005-01-12

申请人： Eric R. Blomiley ,  Gurtej S. Sandhu ,  Cem Basceri ,  Nirmal Ramaswamy

发明人： Eric R. Blomiley ,  Gurtej S. Sandhu ,  Cem Basceri ,  Nirmal Ramaswamy

IPC分类号： H01L21/84 ,  H01L21/8238 ,  H01L21/336

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02642

摘要： Methods of forming layers comprising epitaxial silicon, and methods of forming field effect transistors are disclosed. A method of forming a layer comprising epitaxial silicon includes etching an opening into a silicate glass-comprising material received over a monocrystalline material. The etching is conducted to the monocrystalline material effective to expose the monocrystalline material at a base of the opening. A silicon-comprising layer is epitaxially grown within the opening from the monocrystalline material exposed at the base of the opening. The silicate glass-comprising material is etched from the substrate effective to leave a free-standing projection of the epitaxially grown silicon-comprising layer projecting from the monocrystalline material which was at the base of the opening. Other implementations and aspects are contemplated.

摘要翻译： 公开了形成包含外延硅的层的方法和形成场效应晶体管的方法。 形成包含外延硅的层的方法包括将开口蚀刻成通过单晶材料接收的含硅玻璃的材料。 对单晶材料进行蚀刻，以有效地在开口的基部暴露单晶材料。 在开口内从暴露在开口底部的单晶材料外延生长含硅层。 从衬底上蚀刻含硅玻璃的材料有效地留下从开口底部的单晶材料突出的外延生长的含硅层的独立投影。 考虑其他实现和方面。

公开(公告)号：US07439136B2

公开(公告)日：2008-10-21

申请号：US11730039

申请日：2007-03-29

申请人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

IPC分类号： H01L21/336

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66553 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/78642

摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成外延含硅材料的方法和形成垂直晶体管的方法。 在一个实施方案中，形成外延含硅材料的方法包括提供包括单晶材料的衬底。 单晶材料的第一部分向外暴露，而单晶材料的第二部分被掩蔽。 第一含硅层从第一部分的暴露的单晶材料而不是被掩蔽的第二部分的单晶材料外延生长。 在生长第一含硅层之后，单晶材料的第二部分被未掩蔽。 然后从第一含硅层和第二部分的未掩模的单晶材料外延生长第二含硅层。 考虑了其他方面和实现。

公开(公告)号：US06911367B2

公开(公告)日：2005-06-28

申请号：US10418696

申请日：2003-04-18

申请人： Eric R. Blomiley ,  Er-Xuan Ping

发明人： Eric R. Blomiley ,  Er-Xuan Ping

IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L21/285 ,  H01L21/336 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/78 ,  H01L21/20 ,  H01L21/36

CPC分类号： C30B29/06 ,  C30B25/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28512 ,  H01L21/28562 ,  H01L21/76 ,  H01L21/762 ,  H01L21/823481 ,  H01L29/66628 ,  H01L29/7834

摘要： The invention includes methods of forming epitaxially-grown semiconductive material having a flattened surface, and methods of incorporating such material into trenched regions and elevated/source drain regions. A method of forming epitaxially-grown semiconductive material having a flattened surface can include the following. Initially, a single crystal first semiconductor material is provided. A second semiconductive material is epitaxially grown from a surface of the first semiconductor material. The epitaxial growth is stopped, and subsequently an upper surface of the second semiconductor material is exposed to at least one hydrogen isotope to reduce curvature of (i.e., flatten) a surface of the second semiconductor material.

摘要翻译： 本发明包括形成具有平坦表面的外延生长的半导体材料的方法，以及将这种材料结合到沟槽区域和升高/源极漏极区域中的方法。 形成具有平坦表面的外延生长的半导体材料的方法可以包括以下。 首先，提供单晶第一半导体材料。 第二半导体材料从第一半导体材料的表面外延生长。 停止外延生长，随后将第二半导体材料的上表面暴露于至少一个氢同位素，以减小第二半导体材料的表面的曲率（即平坦化）。