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1.发明授权公开(公告)号：US08287957B2
公开(公告)日：2012-10-16
申请号：US11286260
申请日：2005-11-22
Applicant: Paul F. Nealey , SangOuk Kim , Erik W. Edwards , Mark P. Stoykovich , Juan J. de Pablo
Inventor： Paul F. Nealey , SangOuk Kim , Erik W. Edwards , Mark P. Stoykovich , Juan J. de Pablo
IPC: B05D5/00
CPC classification number: G03F7/40 , B81C1/00031 , B81C2201/0149 , B82Y30/00 , G03F7/265
Abstract: The present invention provides improved and compositions methods for replicating substrate patterns including patterns containing irregular features. The methods of the invention involve depositing block copolymer materials on a patterned substrate and ordering components in the material to replicate the pattern. In some embodiments, ordering is facilitated through the use of blends of the copolymer material and/or configuring substrate patterns so that regions of the substrate pattern interact in a highly preferential manner with at least one of the components in the copolymer material. The invention also provides compositions containing a substrate pattern with irregular features replicated in a block copolymer material.
Abstract translation: 本发明提供了用于复制衬底图案的改进和组合方法，包括含有不规则特征的图案。 本发明的方法包括在图案化的衬底上沉积嵌段共聚物材料并排序该材料中的组分以复制该图案。 在一些实施方案中，通过使用共聚物材料的共混物和/或配置基底图案来促进排序，使得基底图案的区域以高度优先的方式与共聚物材料中的至少一种组分相互作用。 本发明还提供了含有在嵌段共聚物材料中复制的具有不规则特征的基底图案的组合物。
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公开(公告)号：US07851252B2
公开(公告)日：2010-12-14
申请号：US12372185
申请日：2009-02-17
Applicant: Paul F. Nealey , Tushar S. Jain , Erik W. Edwards , Juan Jose de Pablo
Inventor： Paul F. Nealey , Tushar S. Jain , Erik W. Edwards , Juan Jose de Pablo
CPC classification number: H01L21/3086 , B81C1/00404 , B82B3/0014 , B82Y10/00 , B82Y30/00 , C08J7/12 , C08J7/16 , G03F1/68 , G03F7/165 , H01L21/0271 , H01L21/3081 , H01L21/3083
Abstract: The present invention provides patterned features of dimensions of less than 50 nm on a substrate. According to various embodiments, the features may be “Manhattan” style structures, have high aspect ratios, and/or have atomically smooth surfaces. The patterned features are made from polymer brushes grafted to a substrate. In some embodiments, the dimensions of the features may be determined by adjusting the grafting density and/or the molecular weight of the brushes. Once the brushes are patterned, the features can be shaped and reshaped with thermal or solvent treatments to achieve the desired profiles. The chemical nature of the polymer brush is thus independent of the patterning process, which allows for optimization of the polymer brush used for specific applications. Applications include masks for pattern transfer techniques such as reactive ion etching.
Abstract translation: 本发明在衬底上提供尺寸小于50nm的图案特征。 根据各种实施例，特征可以是“曼哈顿式”结构，具有高纵横比，和/或具有原子平滑表面。 图案特征由接枝到基底上的聚合物刷制成。 在一些实施方案中，可以通过调整电刷的接枝密度和/或分子量来确定特征的尺寸。 一旦刷子被图案化，就可以通过热处理或溶剂处理来形成特征并重新形成特征，以实现所需的轮廓。 因此，聚合物刷的化学性质独立于图案化工艺，这允许优化用于特定应用的聚合物刷。 应用包括用于图案转移技术的掩模，例如反应离子蚀刻。
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公开(公告)号：US20090206054A1
公开(公告)日：2009-08-20
申请号：US12372185
申请日：2009-02-17
Applicant: Paul F. Nealey , Tushar S. Jain , Erik W. Edwards , Juan J. de Pablo
Inventor： Paul F. Nealey , Tushar S. Jain , Erik W. Edwards , Juan J. de Pablo
CPC classification number: H01L21/3086 , B81C1/00404 , B82B3/0014 , B82Y10/00 , B82Y30/00 , C08J7/12 , C08J7/16 , G03F1/68 , G03F7/165 , H01L21/0271 , H01L21/3081 , H01L21/3083
Abstract: The present invention provides patterned features of dimensions of less than 50 nm on a substrate. According to various embodiments, the features may be “Manhattan” style structures, have high aspect ratios, and/or have atomically smooth surfaces. The patterned features are made from polymer brushes grafted to a substrate. In some embodiments, the dimensions of the features may be determined by adjusting the grafting density and/or the molecular weight of the brushes. Once the brushes are patterned, the features can be shaped and reshaped with thermal or solvent treatments to achieve the desired profiles. The chemical nature of the polymer brush is thus independent of the patterning process, which allows for optimization of the polymer brush used for specific applications. Applications include masks for pattern transfer techniques such as reactive ion etching.
Abstract translation: 本发明在衬底上提供尺寸小于50nm的图案特征。 根据各种实施例，特征可以是“曼哈顿式”结构，具有高纵横比，和/或具有原子平滑表面。 图案特征由接枝到基底上的聚合物刷制成。 在一些实施方案中，可以通过调整电刷的接枝密度和/或分子量来确定特征的尺寸。 一旦刷子被图案化，就可以通过热处理或溶剂处理来形成特征并重新形成特征，以实现所需的轮廓。 因此，聚合物刷的化学性质独立于图案化工艺，这允许优化用于特定应用的聚合物刷。 应用包括用于图案转移技术的掩模，例如反应离子蚀刻。
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公开(公告)号：US07514764B2
公开(公告)日：2009-04-07
申请号：US11386226
申请日：2006-03-21
Applicant: Paul F Nealey , Tushar S. Jain , Erik W. Edwards , Juan J. de Pablo
Inventor： Paul F Nealey , Tushar S. Jain , Erik W. Edwards , Juan J. de Pablo
CPC classification number: H01L21/3086 , B81C1/00404 , B82B3/0014 , B82Y10/00 , B82Y30/00 , C08J7/12 , C08J7/16 , G03F1/68 , G03F7/165 , H01L21/0271 , H01L21/3081 , H01L21/3083
Abstract: The present invention provides patterned features of dimensions of less than 50 nm on a substrate. According to various embodiments, the features may be “Manhattan” style structures, have high aspect ratios, and/or have atomically smooth surfaces. The patterned features are made from polymer brushes grafted to a substrate. In some embodiments, the dimensions of the features may be determined by adjusting the grafting density and/or the molecular weight of the brushes. Once the brushes are patterned, the features can be shaped and reshaped with thermal or solvent treatments to achieve the desired profiles. The chemical nature of the polymer brush is thus independent of the patterning process, which allows for optimization of the polymer brush used for specific applications. Applications include masks for pattern transfer techniques such as reactive ion etching.
Abstract translation: 本发明在衬底上提供尺寸小于50nm的图案特征。 根据各种实施例，特征可以是“曼哈顿式”结构，具有高纵横比，和/或具有原子平滑表面。 图案特征由接枝到基底上的聚合物刷制成。 在一些实施方案中，可以通过调整电刷的接枝密度和/或分子量来确定特征的尺寸。 一旦刷子被图案化，就可以通过热处理或溶剂处理来形成特征并重新形成特征，以实现所需的轮廓。 因此，聚合物刷的化学性质独立于图案化工艺，这允许优化用于特定应用的聚合物刷。 应用包括用于图案转移技术的掩模，例如反应离子蚀刻。
