公开(公告)号：US20100158056A1

公开(公告)日：2010-06-24

申请号：US12495616

申请日：2009-06-30

申请人： Jae-Heon Shin ,  Kyung-Hyun Park ,  Nam-Je Kim ,  Chul-Wook Lee ,  Eun-Deok Sim ,  Sang-Pil Han ,  Yong-Soon Baek

发明人： Jae-Heon Shin ,  Kyung-Hyun Park ,  Nam-Je Kim ,  Chul-Wook Lee ,  Eun-Deok Sim ,  Sang-Pil Han ,  Yong-Soon Baek

IPC分类号： H01S3/13

CPC分类号： H01S5/06256 ,  H01S5/0623 ,  H01S5/1215 ,  H01S2302/02

摘要： Provided is a semiconductor laser device including: a gain area where multi-wavelength lights are generated and gain are provided; a first reflection area where among the multi-wavelength lights, a first-wavelength light is reflected to the gain area in response to a first selection signal; a second reflection area where among the multi-wavelength lights, a second-wavelength light is reflected to the gain area; and a phase control area where a phase of the second-wavelength light is shifted in response to a phase control signal, the phase control area being disposed between the first reflection layer and the second reflection layer.

摘要翻译： 本发明提供一种半导体激光装置，具备：生成多波长光并增益的增益区域; 第一反射区域，其中在所述多波长光之中，响应于第一选择信号，第一波长光被反射到所述增益区域; 第二反射区域，其中在多波长光中，第二波长光被反射到增益区域; 以及相位控制区域，其中所述第二波长光的相位响应于相位控制信号而移位，所述相位控制区域设置在所述第一反射层和所述第二反射层之间。

公开(公告)号：US20070091942A1

公开(公告)日：2007-04-26

申请号：US11438201

申请日：2006-05-22

申请人： Young Ahn Leem ,  Eun Deok Sim ,  Dong Churl Kim ,  Kyung Hyun Park

发明人： Young Ahn Leem ,  Eun Deok Sim ,  Dong Churl Kim ,  Kyung Hyun Park

IPC分类号： H01S3/098 ,  H01S3/08

CPC分类号： H01S5/065 ,  H01S5/0625 ,  H01S5/0657 ,  H01S5/1039 ,  H01S5/1203

摘要： Provided are a laser diode generating passive mode locking that does not contain non-linear sector of an SA, and a method of creating an optical pulse using the same diode. The laser diode includes a DFB sector serving as a reflector and a gain sector. The gain sector is connected to the DFB sector and includes an as-cleaved facet formed at the end of the gain sector. When a current less than a threshold current is applied to the DFB sector to allow the DFB sector to operate as a reflector, passive mode locking occurs swiftly and therefore a sector of the SA is not required, which makes manufacturing simple. Also, it is possible to effectively extend a frequency variable region compared to using of the SA.

摘要翻译： 提供了一种激光二极管，其产生不包含SA的非线性扇区的无源模式锁定，以及使用相同二极管产生光脉冲的方法。 激光二极管包括用作反射器的DFB扇区和增益扇区。 增益扇区连接到DFB扇区，并包括在增益扇区末端形成的切割面。 当将小于阈值电流的电流施加到DFB扇区以允许DFB扇区作为反射器操作时，被动模式锁定迅速发生，因此不需要SA的扇区，这使制造变得简单。 此外，与使用SA相比，可以有效地扩展频率可变区域。

公开(公告)号：US07133194B1

公开(公告)日：2006-11-07

申请号：US11388522

申请日：2006-03-24

申请人： Oh Kee Kwon ,  Kang Ho Kim ,  Kwang Ryong Oh ,  Jong Hoi Kim ,  Eun Deok Sim ,  Hyun Soo Kim

发明人： Oh Kee Kwon ,  Kang Ho Kim ,  Kwang Ryong Oh ,  Jong Hoi Kim ,  Eun Deok Sim ,  Hyun Soo Kim

IPC分类号： H01S3/13

CPC分类号： H01S5/4062 ,  H01S5/026 ,  H01S5/0268 ,  H01S5/06243 ,  H01S5/141 ,  H01S5/4075

摘要： Provided is a wavelength tunable light source that can electrically tune wavelengths by monolithically integrating an optical amplifier, a beam steering unit, and a concave diffraction grating on a single substrate. A beam is deflected by the beam steering unit when an electrical signal is applied to two electrodes installed in the beam steering unit to be incident on the diffraction grating, and then diffracted by the diffraction grating according to the incidence angle such that part of the beam with a specific wavelength is reflected, thereby achieving wavelength tuning. Since the wavelength tuning is achieved electrically, the wavelength tunable light source is structurally stable and has a rapid wavelength tuning rate.

摘要翻译： 提供了一种波长可调光源，其可以通过在单个基板上单片集成光放大器，光束转向单元和凹衍射光栅来电调谐波长。 当电信号被施加到安装在光束转向单元中的两个电极入射到衍射光栅上时，光束被光束转向单元偏转，然后根据入射角被衍射光栅衍射，使得光束的一部分 反射特定波长，从而实现波长调谐。 由于波长调谐是电气实现的，波长可调光源在结构上是稳定的并且具有快速的波长调谐率。

公开(公告)号：US07813388B2

公开(公告)日：2010-10-12

申请号：US11932937

申请日：2007-10-31

申请人： Kyung Hyun Park ,  Hyun Sung Ko ,  Young Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

发明人： Kyung Hyun Park ,  Hyun Sung Ko ,  Young Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

IPC分类号： H01S3/098

CPC分类号： H01S5/0625 ,  H01S5/0658

摘要： Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.

摘要翻译： 提供了一种自脉动激光二极管，包括：用作反射器的分布反馈（DFB）部分; 连接到DFB部分并且在一端具有劈裂小面的增益部分; 相位控制部，其插入在所述DFB部和所述增益部之间; 以及外部射频（RF）输入部分，将外部RF信号施加到DFB部分和增益部分中的至少一个。

公开(公告)号：US20090154923A1

公开(公告)日：2009-06-18

申请号：US12208560

申请日：2008-09-11

申请人： Oh Kee KWON ,  Yong Soon Baek ,  Jang Uk Shin ,  Young Tak Han ,  Dong Hun Lee ,  Chul Wook Lee ,  Eun Deok Sim ,  Jong Hoi Kim ,  Sang Pil Han ,  Sang Ho Park

发明人： Oh Kee KWON ,  Yong Soon Baek ,  Jang Uk Shin ,  Young Tak Han ,  Dong Hun Lee ,  Chul Wook Lee ,  Eun Deok Sim ,  Jong Hoi Kim ,  Sang Pil Han ,  Sang Ho Park

IPC分类号： H04J14/02

CPC分类号： G02B6/12019 ,  G02B6/356 ,  H04J14/0212 ,  H04J14/0221 ,  H04Q11/0005 ,  H04Q2011/0011 ,  H04Q2011/0016 ,  H04Q2011/0024 ,  H04Q2011/0026

摘要： Provided is a wavelength selective switch (WSS), and more particularly, a wavelength selective switch for electrically switching a wavelength without physical displacement. The wavelength selective switch includes an optical demultiplexer for dividing an input optical signal into signals having wavelengths corresponding to respective channels, selecting either the optical signal of each channel obtained by dividing the input optical signal or an optical signal input via an add port, and outputting the selected optical signal; and an optical multiplexer including an optical deflecting unit for individually deflecting the optical signals of the respective channels received from the optical demultiplexer according to supplied current or applied voltage, wherein the optical signal of each channel deflected by the optical deflecting unit is output to a specific output port. In the wavelength selective switch, current is supplied to the optical deflectors to switch the channels, resulting in higher reliability, smaller volume and higher switching speed than a conventional wavelength selective switch using mechanical displacement to switch channels.

摘要翻译： 提供了一种波长选择开关（WSS），更具体地说，提供一种用于电气切换没有物理位移的波长的波长选择开关。 波长选择开关包括：光分路器，用于将输入光信号分成具有对应于各个通道的波长的信号，选择通过分频输入光信号或通过添加端口输入的光信号获得的每个通道的光信号，并输出 所选择的光信号; 以及光复用器，其包括光偏转单元，用于根据所提供的电流或施加电压单独地偏转从光解复用器接收的各通道的光信号，其中由光偏转单元偏转的每个通道的光信号被输出到特定 输出端口 在波长选择开关中，电流被提供给光偏转器以切换通道，导致比使用机械位移切换通道的常规波长选择开关更高的可靠性，更小的体积和更高的开关速度。

公开(公告)号：US07356263B2

公开(公告)日：2008-04-08

申请号：US11190755

申请日：2005-07-27

申请人： Dong Churl Kim ,  Dae Su Yee ,  Young Ahn Leem ,  Eun Deok Sim ,  Kyung Hyun Park

发明人： Dong Churl Kim ,  Dae Su Yee ,  Young Ahn Leem ,  Eun Deok Sim ,  Kyung Hyun Park

IPC分类号： H04B10/02

CPC分类号： H04B10/516 ,  H04B2210/517

摘要： Provided is a signal processor for converting a signal that converts a return to zero (RZ) signal into a non-return to zero (NRZ) signal, in which two 2R (re-amplifying, re-shaping) regenerators are connected in parallel between an input waveguide and an output waveguide with different lengths from each other. The 2R regenerator includes: two semiconductor optical amplifiers having different lengths from each other; and phase control means connected to a short semiconductor optical amplifier. The RZ signal input by a length difference of the waveguide is delayed by a time difference of a half of one bit so that the 2R regenerated NRZ signal can be obtained.

摘要翻译： 提供了一种信号处理器，用于转换将归零（RZ）信号转换为不归零（NRZ）信号的信号，其中两个2R（再放大，重整）再生器并联连接在 具有彼此不同长度的输入波导和输出波导。 2R再生器包括：具有彼此不同长度的两个半导体光放大器; 以及连接到短半导体光放大器的相位控制装置。 通过波导的长度差输入的RZ信号被延迟了一位的一半的时间差，从而可以获得2R再生的NRZ信号。

公开(公告)号：US07310469B2

公开(公告)日：2007-12-18

申请号：US11481580

申请日：2006-07-06

申请人： Sahng Gi Park ,  Eun Deok Sim ,  Jeong Woo Park ,  Jae Sik Sim ,  Yong Soon Baek

发明人： Sahng Gi Park ,  Eun Deok Sim ,  Jeong Woo Park ,  Jae Sik Sim ,  Yong Soon Baek

IPC分类号： G02B6/10 ,  G02B6/26 ,  H04B10/06

CPC分类号： G02B6/12004 ,  H01L31/0304 ,  H01L31/105

摘要： A waveguide PIN photodiode is provided. The waveguide PIN photodiode includes a lower light guide layer, a light absorption layer, an upper light guide layer, and a cladding layer. The lower light guide is formed on a substrate, and the light absorption layer is formed on the lower light guide layer. The upper light guide layer is formed on the light absorption layer, and the cladding layer is formed on the upper light guide layer. The lower light guide layer, the light absorption layer, and the upper light guide layer constitute a core layer, which is an optical waveguide, and graded index distribution is symmetrically formed in a depth direction, centering around the light absorption layer having a highest refractive index.

摘要翻译： 提供了一种波导PIN光电二极管。 波导PIN光电二极管包括下导光层，光吸收层，上导光层和包覆层。 下部光导件形成在基板上，并且光吸收层形成在下部光导层上。 上光导层形成在光吸收层上，包层形成在上光导层上。 下导光层，光吸收层和上导光层构成作为光波导的芯层，并且在深度方向上对称地形成渐变折射率分布，以具有最高折射率的光吸收层为中心 指数。

公开(公告)号：US07283706B2

公开(公告)日：2007-10-16

申请号：US11654112

申请日：2007-01-17

申请人： Hyun-Soo Kim ,  Eun Deok Sim

发明人： Hyun-Soo Kim ,  Eun Deok Sim

IPC分类号： G02B6/34 ,  H01S3/08

CPC分类号： H01S5/141 ,  G02B6/12004 ,  G02B6/1228 ,  G02B2006/12102 ,  G02B2006/12107 ,  G02B2006/12121 ,  H01S5/0071 ,  H01S5/026 ,  H01S5/0654 ,  H01S5/1014 ,  H01S5/143 ,  H01S5/2231

摘要： The present invention relates to a semiconductor based parabolic waveguide-type collimating lens and a monolithically integrated type tunable external cavity laser diode light source. The monolithically integrated type tunable external cavity laser diode light source includes a gain medium for generating a gain of an optical signal, a collimating lens for correcting an divergent light beam to a parallel light beam, a passive waveguide through which the parallel light beam travels, an optical deflector to change a traveling direction of the parallel light beam changing a refractive index of medium on a traveling path of the parallel light beam traveling through the slab waveguide in response to an external electric signal and a diffraction grating to diffract the parallel light beam passing through the optical deflector, wherein these are integrate into one substrate made of an InP-based semiconductor as well as a material such as a GaAs-based semiconductor, a Si-based semiconductor, LiNbO3-based semiconductor or the like.

公开(公告)号：US07174068B2

公开(公告)日：2007-02-06

申请号：US11290295

申请日：2005-11-30

申请人： Hyun-Soo Kim ,  Eun Deok Sim

发明人： Hyun-Soo Kim ,  Eun Deok Sim

IPC分类号： G02B6/32

CPC分类号： H01S5/141 ,  G02B6/12004 ,  G02B6/1228 ,  G02B2006/12102 ,  G02B2006/12107 ,  G02B2006/12121 ,  H01S5/0071 ,  H01S5/026 ,  H01S5/0654 ,  H01S5/1014 ,  H01S5/143 ,  H01S5/2231

摘要： The present invention relates to a semiconductor based parabolic waveguide-type collimating lens and a monolithically integrated type tunable external cavity laser diode light source. The monolithically integrated type tunable external cavity laser diode light source includes a gain medium for generating a gain of an optical signal, a collimating lens for correcting an divergent light beam to a parallel light beam, a passive waveguide through which the parallel light beam travels, an optical deflector to change a traveling direction of the parallel light beam changing a refractive index of medium on a traveling path of the parallel light beam traveling through the slab waveguide in response to an external electric signal and a diffraction grating to diffract the parallel light beam passing through the optical deflector, wherein these are integrate into one substrate made of an InP-based semiconductor as well as a material such as a GaAs-based semiconductor, a Si-based semiconductor, LiNbO3-based semiconductor or the like.

摘要翻译： 本发明涉及一种基于半导体的抛物面波导型准直透镜和单片集成型可调谐外腔激光二极管光源。 单片集成型可调谐外腔激光二极管光源包括用于产生光信号增益的增益介质，用于将发散光束校正为平行光束的准直透镜，平行光束通过该无源波导传播的无源波导， 光学偏转器，用于响应于外部电信号和衍射光栅，改变沿平行光束行进的平行光束的行进路径上的介质折射率的平行光束的行进方向，以衍射平行光束 通过光学偏转器，其中这些被集成到由基于InP的半导体制成的一个衬底中，以及诸如GaAs基半导体，Si基半导体，LiNbO 3 N基 半导体等。

公开(公告)号：US07045374B2

公开(公告)日：2006-05-16

申请号：US10844321

申请日：2004-05-13

申请人： Dong Hun Lee ,  Eun Deok Sim ,  Ki Soo Kim ,  Moon Ho Park

发明人： Dong Hun Lee ,  Eun Deok Sim ,  Ki Soo Kim ,  Moon Ho Park

IPC分类号： H01L21/00

CPC分类号： H01S5/5009 ,  H01S5/1014 ,  H01S5/2206 ,  H01S5/227 ,  H01S5/3213 ,  H01S2301/173 ,  H01S2301/18

摘要： Provided is a method for manufacturing a planar buried semiconductor optical amplifier in which a spot size converter with a double-core structure is integrated, comprising the steps of: after growing a lower cladding layer, a lower waveguide layer and an upper cladding layer on a substrate, patterning a portion of thickness of the lower cladding layer, the lower waveguide layer and the upper cladding layer through an etching process using a dielectric layer pattern to form a lower waveguide; growing a planarization layer on the etched portions of the lower cladding layer, the lower waveguide layer and the upper cladding layer to smooth a surface; after removing the dielectric layer pattern, growing a space layer, an upper waveguide layer and a first cladding layer on the overall upper surface; patterning the first cladding layer, the upper waveguide layer and the space layer through the etching process using the dielectric layer pattern to form an upper waveguide having a horizontal taper area; after growing a first current blocking layer on the etched portions of the first cladding layer, the upper waveguide layer and the space layer of the upper waveguide, growing a second current blocking layer on the exposed portion of the first current block layer excluding the dielectric layer pattern; and after removing the dielectric layer pattern, forming a second cladding layer on the overall upper surface, and forming an electrode on the second cladding layer and the substrate, respectively.

摘要翻译： 提供一种制造平面埋入式半导体光放大器的方法，其中集成了具有双芯结构的光斑尺寸转换器，包括以下步骤：在下敷层，下波导层和上包层上生长 基板，通过使用电介质层图案的蚀刻工艺构图下包层，下波导层和上包层的厚度的一部分，以形成下波导; 在下包层，下波导层和上包层的蚀刻部分上生长平坦化层，以平滑表面; 在去除介电层图案之后，在整个上表面上生长空间层，上波导层和第一包层; 通过使用电介质层图案的蚀刻工艺图案化第一包层，上波导层和空间层，以形成具有水平锥面积的上波导; 在第一包层的蚀刻部分，上波导层和上波导的空间层上生长第一电流阻挡层之后，在除电介质层之外的第一电流块层的暴露部分上生长第二电流阻挡层 模式; 并且在去除介电层图案之后，在整个上表面上形成第二包层，并分别在第二包覆层和基板上形成电极。