CT Imaging Apparatus with One-Piece Curved X-ray Detector

    公开(公告)号:US20200330051A1

    公开(公告)日:2020-10-22

    申请号:US16819132

    申请日:2020-03-15

    申请人: Fei Wang

    发明人: Fei Wang

    IPC分类号: A61B6/03 A61B6/02 A61B6/00

    摘要: A novel in-line X-ray CT imaging apparatus is presented. The X-ray CT imaging apparatus comprises one or a plurality of X-ray sources, one or a plurality of one-piece curved X-ray detectors, a rotational gantry, a translational stage, a computer that is loaded with data acquisition system and CT imaging software. The one-piece curved detector is truly one entity with capability of forming a native curved geometry with pre-determined radius. The detector would have the same or similar electronics to that of a conventional rigid X-ray flat panel that includes a photon conversion phosphorus layer configured to generate light photons in response to radiation. Both X-ray source and detector are mounted on a rotation gantry. X-ray CT 3D image projection data can be acquired while the gantry is rotating and object on the stage is moving translational simultaneously. Using CT software, image reconstruction can be performed at the computer.

    Method to measure a molecular diffusion coefficient in a porous powder

    公开(公告)号:US10309890B2

    公开(公告)日:2019-06-04

    申请号:US15438795

    申请日:2017-02-22

    IPC分类号: G01N15/08 G01N33/00

    摘要: An apparatus and method for measuring molecular diffusivity in porous powders or minerals, e.g., the microporous synthetic minerals used for gas separation and chemical catalysis, were invented that allows a varying pressure in the gas around the powder during the measurement. This obviates the need for the pressure to be constant and the attendant complicated component parts. A mass balance model equation of the sample cell with the diffusivity as an adjustable parameter is used to deduce the sample cell pressure change versus time (uptake curve) until the equilibration of gas diffusion into the powder. A numerical analysis method is used to solve the mathematical model to compute a simulated uptake curve. Curve fitting of the simulated and measured uptake curves is used to optimize the diffusivity parameter, which gives the measured diffusivity. The apparatus and method are simple, easy to use, and automation is also simple.

    Method and apparatus for paginating electronic documents

    公开(公告)号:US09727293B1

    公开(公告)日:2017-08-08

    申请号:US12975282

    申请日:2010-12-21

    摘要: A method and apparatus for paginating documents such as html documents is disclosed. A document viewing engine generates a preliminary layout for the, the preliminary layout having a layout width that is equivalent to a viewport width of a viewport on which the document will be displayed. The document viewing engine computes a final layout for the document based on determining a plurality of horizontal pixel lines where page breaks can be placed without cutting off any element in the document and assigns page breaks to one or more of the plurality of horizontal pixel lines based on a height of the viewport. The document viewing engine identifies, for a current page, one or more visual elements that will not be fully within the viewport if painted. The document viewing engine paints the current page without painting the identified one or more visual elements. After changing from the current page to a new page, the document viewing engine paints the contents of the new page without re-computing the final layout of the document.

    Single-position hall effect measurements

    公开(公告)号:US09644939B2

    公开(公告)日:2017-05-09

    申请号:US13996968

    申请日:2011-12-21

    摘要: A method for determining an electrical property of a test sample having a conductive surface portion with an electrical boundary includes (a) determining a first distance between the single position and the boundary by (1) contacting the test sample with a first four-contact configuration of a multi-contact probe at the single position; (2) applying a magnetic field at the single position; (3) measuring first and second resistances from which to calculate a first resistance difference; (4) measuring third and fourth resistances from which to calculate a second resistance difference; (5) defining a first relation including parameters representing the first and second resistance differences and the first distance; (6) determining the first distance by using the first and second resistance differences in the first relation; (b) repeating steps (1)-(6) with a second four-contact configuration to determine a second distance between the single position and the boundary; (c) defining a second relation including the electrical property and a fourth parameter representing the second distance; and (d) employing the second distance as the fourth parameter in the second relation for determining the electrical property.

    Systems and methods of automatic boundary control for semiconductor processes
    9.
    发明授权
    Systems and methods of automatic boundary control for semiconductor processes 有权
    半导体工艺自动边界控制系统和方法

    公开(公告)号:US09250619B2

    公开(公告)日:2016-02-02

    申请号:US13311601

    申请日:2011-12-06

    IPC分类号: G06F19/00 G05B19/18 H01L21/66

    摘要: A system and method of automatically calculating boundaries for a semiconductor fabrication process. The method includes selecting a first parameter for monitoring during a semiconductor fabrication process. A first set of values for the first parameter are received and a group value of the first set is determined. Each value in the first set of values is normalized. A first weighting factor is selected based on a number of values in the first set. The embodiment also includes generating a first and a second boundary value as a function of the weighting factor, the first set normalized values and the group value of the first set and applying the first and second boundary values to control the semiconductor fabrication process.

    摘要翻译: 一种自动计算半导体制造工艺边界的系统和方法。 该方法包括在半导体制造过程中选择用于监测的第一参数。 接收第一参数的第一组值,并确定第一组的组值。 第一组值中的每个值都被归一化。 基于第一组中的值的数量来选择第一加权因子。 该实施例还包括根据加权因子,第一集合归一化值和第一组的组值产生第一和第二边界值,并施加第一和第二边界值以控制半导体制造过程。