公开(公告)号：US20120012555A1

公开(公告)日：2012-01-19

申请号：US13200305

申请日：2011-09-22

申请人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

发明人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

公开(公告)号：US08345383B2

公开(公告)日：2013-01-01

申请号：US13200305

申请日：2011-09-22

申请人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

发明人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

公开(公告)号：US08177955B2

公开(公告)日：2012-05-15

申请号：US10860716

申请日：2004-06-03

申请人： Feiyue Li ,  Xiaomin Liu

发明人： Feiyue Li ,  Xiaomin Liu

IPC分类号： C25D3/56

CPC分类号： G11B5/1877 ,  C22C38/10 ,  C22C38/12 ,  C25D3/562 ,  G11B5/187 ,  G11B5/31 ,  G11B5/3116 ,  G11B5/3133 ,  Y10T428/11 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/1193

摘要： A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FeWCoXNiYVZ in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density BS greater than 1.9 Telsa and a resistivity ρ higher than 70 μohms-cm.

摘要翻译： 公开了可以用作磁写头中的顶极层和底极层的磁性层。 磁性层具有由FeWCoXNiYVZ表示的组成，其中w，x，y和z分别是Fe，Co，Ni和V的原子％，其中w在约60和85之间，x在约10 30，y在0和约20之间，z在约0.1和3之间，并且其中w + x + y + z = 100。 使用电镀电流密度为3〜30mA / cm 2的电镀工艺来沉积磁性层，并且涉及具有少量作为V源的VOSO4的电解质溶液。 所得到的磁性层具有大于1.9Telsa的磁饱和磁通密度BS和电阻率rgr。 高于70μohms-cm。

公开(公告)号：US20100061016A1

公开(公告)日：2010-03-11

申请号：US12231756

申请日：2008-09-05

申请人： Cherng-Chyi Han ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

发明人： Cherng-Chyi Han ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

公开(公告)号：US20120225321A1

公开(公告)日：2012-09-06

申请号：US13469856

申请日：2012-05-11

申请人： Feiyue Li ,  Xiaomin Liu

发明人： Feiyue Li ,  Xiaomin Liu

IPC分类号： G11B5/39 ,  C22C38/12 ,  C22C38/08 ,  G11B5/33 ,  C22C38/10

CPC分类号： G11B5/1877 ,  C22C38/10 ,  C22C38/12 ,  C25D3/562 ,  G11B5/187 ,  G11B5/31 ,  G11B5/3116 ,  G11B5/3133 ,  Y10T428/11 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/1193

摘要： A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FeWCoXNiYVZ in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density BS greater than 1.9 Telsa and a resistivity ρ higher than 70 μohms-cm.

摘要翻译： 公开了可以用作磁写头中的顶极层和底极层的磁性层。 磁性层具有由FeWCoXNiYVZ表示的组成，其中w，x，y和z分别是Fe，Co，Ni和V的原子％，其中w在约60和85之间，x在约10 30，y在0和约20之间，z在约0.1和3之间，并且其中w + x + y + z = 100。 使用电镀电流密度为3〜30mA / cm 2的电镀工艺来沉积磁性层，并且涉及具有少量作为V源的VOSO4的电解质溶液。 所得到的磁性层具有大于1.9Telsa的磁饱和磁通密度BS和电阻率rgr。 高于70μohms-cm。

公开(公告)号：US20120145551A1

公开(公告)日：2012-06-14

申请号：US13400389

申请日：2012-02-20

申请人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

发明人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

IPC分类号： C25D5/18 ,  C25D7/00 ,  C23C28/00

CPC分类号： C25D3/562 ,  C25D5/18 ,  G11B5/3163 ,  H01F41/26

摘要： A process is described for the fabrication, through electrodeposition, of FexCoyNiz (x=60-71, y=25-35, z=0-5) films that have, in their as-deposited form, a saturation magnetization of at least 24 kG and a coercivity of less than 0.3 Oe. A key feature is the addition of aryl sulfinates to the plating bath along with a suitable seed layer.

摘要翻译： 描述了通过电沉积制造FexCoyNiz（x = 60-71，y = 25-35，z = 0-5）膜的方法，其具有以其沉积形式的至少24个饱和磁化强度 kG，矫顽力小于0.3 Oe。 一个关键的特征是在适当的种子层的同时向镀浴中加入芳基亚硫酸盐。

公开(公告)号：US20080197021A1

公开(公告)日：2008-08-21

申请号：US11707826

申请日：2007-02-16

申请人： Xiaomin Liu ,  Cherng-Chyi Han ,  Feiyue Li

发明人： Xiaomin Liu ,  Cherng-Chyi Han ,  Feiyue Li

IPC分类号： C25D5/50

CPC分类号： C25D3/562 ,  C25D5/00 ,  C25D5/006 ,  G11B5/3163 ,  H01F41/26

摘要： A process sequence for forming a soft magnetic layer having Hce and Hch of ≦2 Oe, Hk≦5 Oe, and Bs of ≧24 kG is disclosed. A CoFe or CoFe alloy is electroplated in a 10O C to 25O C. bath (pH 2 to 3) containing Co+2 and Fe+2 ions in addition to boric acid and one or more aryl sulfinate salts to promote magnetic softness in the deposited layer. Peak current density is 30 to 60 mA/cm2. A two step magnetic anneal process is performed to further improve softness. An easy axis anneal is followed by a hard axis anneal or vice versa. In an embodiment where the magnetic layer is a pole layer in a write head, the temperature is maintained in a 180O C to 250O C range and the applied magnetic field is kept a 300 Oe or below to prevent degradation of an adjacent read head.

摘要翻译： 公开了用于形成具有<= 2Oe，Hk <= 5Oe，Bs> = 24kG的Hce和Hch的软磁性层的工艺顺序。 CoFe或CoFe合金电镀在10欧姆至25微米的范围内。 除了硼酸和一种或多种芳基亚磺酸盐之外，还含有Co 2+，Fe 2+和Fe 2+ 2+的浴（pH 2至3）以促进沉积层中的磁性 。 峰值电流密度为30〜60mA / cm 2。 进行两步磁退火处理以进一步提高柔软度。 易轴退火之后是硬轴退火，反之亦然。 在磁性层是写入头中的极层的实施例中，温度保持在180℃至250℃范围内，施加的磁场为 保持300 Oe或以下，以防止相邻读头的退化。

公开(公告)号：US20050271904A1

公开(公告)日：2005-12-08

申请号：US10860716

申请日：2004-06-03

申请人： Feiyue Li ,  Xiaomin Liu

发明人： Feiyue Li ,  Xiaomin Liu

IPC分类号： C22C38/00 ,  B05D5/12 ,  C25D3/56 ,  G11B5/187 ,  G11B5/265 ,  G11B5/29 ,  G11B5/31 ,  G11B5/39 ,  H01F10/16 ,  H01F41/26

CPC分类号： G11B5/1877 ,  C22C38/10 ,  C22C38/12 ,  C25D3/562 ,  G11B5/187 ,  G11B5/31 ,  G11B5/3116 ,  G11B5/3133 ,  Y10T428/11 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/1193

摘要： A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FewCoxNiyVz in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density Bs greater than 1.9 Telsa and a resistivity ρ higher than 70 μohms-cm.

摘要翻译： 公开了可以用作磁写头中的顶极层和底极层的磁性层。 磁性层具有由下列组成表示的组成：其中w，x，x，y，z， y和z分别为Fe，Co，Ni和V的原子％，其中w在约60和85之间，x在约10和30之间，y在0和约20之间，z在约 0.1和3，其中w + x + y + z = 100。 使用电镀电流密度为3〜30mA / cm 2的电镀工艺沉积磁性层并涉及具有少量VOSO 4的电解质溶液，其中 是V源。 得到的磁性层具有大于1.9Telsa的磁饱和磁通密度B s和高于70μm-cm的电阻率rho。

公开(公告)号：US08568909B2

公开(公告)日：2013-10-29

申请号：US13469856

申请日：2012-05-11

申请人： Feiyue Li ,  Xiaomin Liu

发明人： Feiyue Li ,  Xiaomin Liu

IPC分类号： G11B5/127 ,  G11B5/187 ,  G11B5/31 ,  C22C38/10 ,  C22C38/12

CPC分类号： G11B5/1877 ,  C22C38/10 ,  C22C38/12 ,  C25D3/562 ,  G11B5/187 ,  G11B5/31 ,  G11B5/3116 ,  G11B5/3133 ,  Y10T428/11 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/1193

摘要： A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FeWCoXNiYVZ in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density BS greater than 1.9 Telsa and a resistivity ρ higher than 70 μohms-cm.

摘要翻译： 公开了可以用作磁写头中的顶极层和底极层的磁性层。 磁性层具有由FeWCoXNiYVZ表示的组成，其中w，x，y和z分别是Fe，Co，Ni和V的原子％，其中w在约60和85之间，x在约10 30，y在0和约20之间，z在约0.1和3之间，并且其中w + x + y + z = 100。 使用电镀电流密度为3〜30mA / cm 2的电镀工艺来沉积磁性层，并且涉及具有少量作为V源的VOSO4的电解质溶液。 得到的磁性层具有大于1.9Telsa的磁饱和磁通密度BS和高于70μΩ·cm的电阻率rho。

公开(公告)号：US08031433B2

公开(公告)日：2011-10-04

申请号：US12231756

申请日：2008-09-05

申请人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

发明人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。