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    Buried layer III-V semiconductor devices with impurity induced layer disordering
    2.
    发明授权
    Buried layer III-V semiconductor devices with impurity induced layer disordering 失效
    具有杂质诱导层紊乱的埋层III-V半导体器件

    公开(公告)号：US5317586A

    公开(公告)日：1994-05-31

    申请号：US928906

    申请日：1992-08-12

    申请人： Robert L. Thornton ,  Fernando A. Ponce

    发明人： Robert L. Thornton ,  Fernando A. Ponce

    IPC分类号： H01S5/00 ,  H01L27/15 ,  H01L33/06 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L27/15 ,  H01S5/34326 ,  H01S5/2059 ,  H01S5/3211 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/3413

    摘要： A buried-layer semiconductor structure solving the problem of defect and dislocation generation which typically results when impurity induced layer disordering occurs across interfaces where there are changes in both the column III and the column V constituents in the manufacture of III-V compound semiconductors, for use, for example, in lasers. The structure is characterized by a thin buried active layers entirely bounded by thick layers on a substrate. Defect generation is avoided by maintaining the thin layer below a critical thickness and lattice matching the thick layers to the substrate.As a further feature, the problem of relatively poor thermal conductivity in AlGaInP based laser structures is avoided by minimizing the amount of AlGaInP material contained in the laser structure, restricting these materials only to the critical active layers, and using AlGaAs for the majority of the optical guiding and carrier confining layers.As a further feature, high levels of p-type doping in AlInP, which is desired because of its low refractive index, is obtained by replacing AlInP layers with AlGaAs layers of high aluminum composition and therefore comparable refractive index.

    摘要翻译： 解决缺陷和位错产生问题的掩埋层半导体结构，其通常在制造III-V族化合物半导体的III族和V族成分两者的界面发生杂质诱导层失调时产生， 例如在激光器中使用。 该结构的特征在于在衬底上完全由厚层界定的薄的掩埋有源层。 通过将薄层保持在临界厚度以下并且将厚层与厚层匹配到衬底来避免缺陷产生。 作为另一个特征，通过使包含在激光器结构中的AlGaInP材料的量最小化来限制这些材料仅限于临界有源层，并且使用AlGaAs作为绝大多数的AlGaInP基激光器结构的相对较差的导热性 光导和载体限制层。 作为另一个特征，由于其低折射率而期望的AlInP中的高水平的p型掺杂通过用具有高铝组成的AlGaAs层替代AlInP层并因此替换折射率而获得。

    Apertured and unapertured reflector structures for electroluminescent devices
    8.
    发明授权
    Apertured and unapertured reflector structures for electroluminescent devices 失效
    用于电致发光器件的有孔和未孔径的反射器结构

    公开(公告)号：US4280107A

    公开(公告)日：1981-07-21

    申请号：US64698

    申请日：1979-08-08

    申请人： Donald R. Scifres ,  Fernando A. Ponce ,  G. A. Neville Connell ,  William Streifer

    发明人： Donald R. Scifres ,  Fernando A. Ponce ,  G. A. Neville Connell ,  William Streifer

    IPC分类号： H01L33/44 ,  H01S5/028 ,  H01S3/19

    CPC分类号： H01L33/44 ,  H01S5/028

    摘要： A multilayered reflector structure deposited on the light emitting surface of a semiconductor electroluminescent device and consecutively comprising a layer of low refractive index material, a layer of intermediate refractive index material and a layer of high refractive index material. Ablative means remove and form an aperture in the outer high index layer at the region of optical radiation emission from said device whereby the level of reflectivity is highest at the center of the aperture as compared to structure regions adjacent to the aperture. In this manner, fundamental mode stabilization may be achieved. Also disclosed is a nonablated three layered reflector structure.

    摘要翻译： 沉积在半导体电致发光器件的发光表面上并且连续地包含低折射率材料层，中间折射率材料层和高折射率材料层的多层反射器结构。 烧蚀装置在来自所述装置的光辐射区域处移除并形成外部高折射率层中的孔，从而与邻近孔的结构区域相比，在孔的中心处的反射率水平最高。 以这种方式，可以实现基模稳定。 还公开了一种未布置的三层反射器结构。

    Solid State Light Emitting Device
    9.
    发明申请
    Solid State Light Emitting Device 审中-公开
    固态发光装置

    公开(公告)号：US20090159869A1

    公开(公告)日：2009-06-25

    申请号：US11886027

    申请日：2006-03-10

    申请人： Fernando A. Ponce ,  Sridhar Srinivasan ,  Hiromasa Omiya

    发明人： Fernando A. Ponce ,  Sridhar Srinivasan ,  Hiromasa Omiya

    IPC分类号： H01L33/00 ,  H01L21/18

    CPC分类号： H01L33/20 ,  H01L27/153 ,  H01L33/24 ,  H01L33/32

    摘要： A semiconductor structure (10, 10′, 70, 80) includes a light emitter (12, 72) carried by a support structure (11). The light emitter (12, 72) includes a base region (24, 76) with a sloped sidewall (12a, 12b) and a light emitting region (25, 77) positioned thereon. The light emitting (25, 77) region includes a nitride semiconductor alloy having a composition that is different in a first region (26, 95) near the support structure (11) compared to a second region (27, 96) away from the support structure (11).

    摘要翻译： 半导体结构（10,10'，70,80）包括由支撑结构（11）承载的光发射器（12,72）。 光发射器（12,72）包括具有倾斜侧壁（12a，12b）和位于其上的发光区域（25,77）的基极区域（24,76）。 发光（25,77）区域包括氮化物半导体合金，其具有与支撑结构（11）附近的第一区域（26,95）不同于远离支撑体的第二区域（27,96）不同的组成 结构（11）。