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    Image sensor with vertical transfer gate
    2.
    发明授权
    Image sensor with vertical transfer gate 有权
    具有垂直传输门的图像传感器

    公开(公告)号：US08531567B2

    公开(公告)日：2013-09-10

    申请号：US12910176

    申请日：2010-10-22

    Applicant: François Roy ,  Frédéric Barbier

    Inventor： François Roy ,  Frédéric Barbier

    IPC: H04N3/14 ,  H04N5/335

    CPC classification number: H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14683

    Abstract: An image sensor including a first pixel positioned between second and third pixels, each of the first, second and third pixels comprising a photodiode region surrounded by an isolation trench; a first charge transfer gate comprising a first column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and second pixels, the first column electrode being configured to receive a first transfer voltage signal; and a second charge transfer gate including a second column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and third pixels, the second column electrode being configured to receive a second transfer voltage signal.

    Abstract translation: 一种图像传感器，包括位于第二和第三像素之间的第一像素，第一，第二和第三像素中的每一个包括由隔离沟槽包围的光电二极管区域; 第一电荷传输门，包括由绝缘层包围并位于第一和第二像素之间的隔离沟槽的开口中的第一列电极，第一列电极被配置为接收第一转印电压信号; 以及第二电荷转移栅极，包括由绝缘层包围并位于第一和第三像素之间的隔离沟槽的开口中的第二列电极，第二列电极被配置为接收第二转印电压信号。

    PINNED PHOTODIODE CMOS IMAGE SENSOR WITH A LOW SUPPLY VOLTAGE
    3.
    发明申请
    PINNED PHOTODIODE CMOS IMAGE SENSOR WITH A LOW SUPPLY VOLTAGE 有权
    带低电压的PINNED光电CMOS图像传感器

    公开(公告)号：US20130009041A1

    公开(公告)日：2013-01-10

    申请号：US13605685

    申请日：2012-09-06

    Applicant: Frédéric Barbier ,  Yvon Cazaux

    Inventor： Frédéric Barbier ,  Yvon Cazaux

    IPC: H01L27/146

    CPC classification number: H04N5/3745 ,  H04N5/3597

    Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

    Abstract translation: 一种用于控制图像传感器的装置，包括至少一个感光单元，该感光单元包括经由第一MOS晶体管能够放电到感测节点的光电二极管，所述感测节点连接到其源极连接到处理系统的第二MOS晶体管的栅极 。 该器件包括偏置电路，其能够在将光电二极管放电到感测节点期间增加源极的电压。

    Pinned photodiode CMOS image sensor with a low supply voltage
    4.
    发明授权
    Pinned photodiode CMOS image sensor with a low supply voltage 有权
    固定光电二极管CMOS图像传感器具有低电源电压

    公开(公告)号：US09191597B2

    公开(公告)日：2015-11-17

    申请号：US13605685

    申请日：2012-09-06

    Applicant: Frédéric Barbier ,  Yvon Cazaux

    Inventor： Frédéric Barbier ,  Yvon Cazaux

    IPC: H04N3/14 ,  H04N5/3745 ,  H04N5/359

    CPC classification number: H04N5/3745 ,  H04N5/3597

    Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

    Abstract translation: 一种用于控制图像传感器的装置，包括至少一个感光单元，该感光单元包括经由第一MOS晶体管能够放电到感测节点的光电二极管，所述感测节点连接到其源极连接到处理系统的第二MOS晶体管的栅极 。 该器件包括偏置电路，其能够在将光电二极管放电到感测节点期间增加源极的电压。

    Image sensor with multiple integration periods
    6.
    发明授权
    Image sensor with multiple integration periods 有权
    具有多个积分期的图像传感器

    公开(公告)号：US08253090B2

    公开(公告)日：2012-08-28

    申请号：US12273164

    申请日：2008-11-18

    Applicant: Frédéric Barbier ,  Benoît Deschamps

    Inventor： Frédéric Barbier ,  Benoît Deschamps

    IPC: H01L27/00

    CPC classification number: H04N5/335 ,  H04N5/2355

    Abstract: A method of reading voltages from an image sensor having an array of pixels, each pixel having at least one photodiode connectable to a storage node, the method having: controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode above a first threshold to the storage node at the start and end of a first integration period and reading a first voltage at the storage node of each pixel in the row at the end of the first integration period; controlling of the pixels in the row to transfer charge accumulated in the photodiode above a second threshold to the storage node at the start and end of a second integration period longer than the first integration period, and reading a second voltage value at the storage node of each pixel in the row at the end of the second integration period; controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode to the storage node at the end of a third integration period longer than the first and second integration periods; comparing for each pixel in the row, the first voltage values with a reference voltage; and based on the comparison, for each pixel in the row, performing one of: determining a pixel output value based on the first and/or second voltage values; and reading a third voltage value at the end of the third integration period, and determining a pixel output value based on the second and/or third voltage values.

    Abstract translation: 一种从具有像素阵列的图像传感器读取电压的方法，每个像素具有可连接到存储节点的至少一个光电二极管，该方法具有：控制一行像素中的每个像素，以将在光电二极管中累积的电荷传输到第一 在第一积分周期的开始和结束时向存储节点提供阈值，并在第一积分周期结束时读取行中每个像素的存储节点处的第一电压; 控制该行中的像素以在比第一积分周期长的第二积分周期的开始和结束时将累积在光电二极管中的电荷传输到第二阈值到存储节点，并且在存储节点的存储节点处读取第二电压值 在第二积分期间结束的行中的每个像素; 控制一行像素中的每个像素，以在比第一和第二积分周期长的第三积分周期结束时将累积在光电二极管中的电荷传送到存储节点; 比较该行中的每个像素，具有参考电压的第一电压值; 并且基于所述比较，对于所述行中的每个像素，执行以下之一：基于所述第一和/或第二电压值确定像素输出值; 以及在第三积分周期结束时读取第三电压值，以及基于第二和/或第三电压值确定像素输出值。

    IMAGE SENSOR WITH VERTICAL TRANSFER GATE
    7.
    发明申请
    IMAGE SENSOR WITH VERTICAL TRANSFER GATE 有权
    具有垂直转移门的图像传感器

    公开(公告)号：US20110096208A1

    公开(公告)日：2011-04-28

    申请号：US12910176

    申请日：2010-10-22

    Applicant: François Roy ,  Frédéric Barbier

    Inventor： François Roy ,  Frédéric Barbier

    IPC: H04N9/64

    CPC classification number: H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14683

    Abstract: An image sensor including a first pixel positioned between second and third pixels, each of the first, second and third pixels comprising a photodiode region surrounded by an isolation trench; a first charge transfer gate comprising a first column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and second pixels, the first column electrode being configured to receive a first transfer voltage signal; and a second charge transfer gate including a second column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and third pixels, the second column electrode being configured to receive a second transfer voltage signal.

    Abstract translation: 一种图像传感器，包括位于第二和第三像素之间的第一像素，第一，第二和第三像素中的每一个包括由隔离沟槽包围的光电二极管区域; 第一电荷传输门，包括由绝缘层包围并位于第一和第二像素之间的隔离沟槽的开口中的第一列电极，第一列电极被配置为接收第一转印电压信号; 以及第二电荷转移栅极，包括由绝缘层包围并位于第一和第三像素之间的隔离沟槽的开口中的第二列电极，第二列电极被配置为接收第二转印电压信号。

    Image sensor pixel circuit
    8.
    发明授权
    Image sensor pixel circuit 有权
    图像传感器像素电路

    公开(公告)号：US08853755B2

    公开(公告)日：2014-10-07

    申请号：US12889537

    申请日：2010-09-24

    Applicant: Frédéric Barbier ,  François Roy

    Inventor： Frédéric Barbier ,  François Roy

    IPC: H01L31/113 ,  H04N5/365 ,  H01L27/146 ,  H04N5/378 ,  H04N5/3745

    CPC classification number: H04N5/378 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14683 ,  H04N5/365 ,  H04N5/3745

    Abstract: A pixel circuit of an image sensor includes a sense node for storing a charge transferred from one or more photodiodes, a source follower transistor having its gate coupled to the sense node and its source node coupled to an output line of the pixel circuit via a read transistor, wherein a body contact of the source follower transistor is connected to the output line.

    Abstract translation: 图像传感器的像素电路包括用于存储从一个或多个光电二极管传送的电荷的感测节点，源极跟随器晶体管，其栅极耦合到感测节点，其源极节点通过读取耦合到像素电路的输出线 晶体管，其中源极跟随器晶体管的体接触连接到输出线。

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