公开(公告)号：US08445978B2

公开(公告)日：2013-05-21

申请号：US13128035

申请日：2009-11-25

Applicant: Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey ,  Lianjun Liu ,  Sergio Pacheco

Inventor： Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey ,  Lianjun Liu ,  Sergio Pacheco

IPC: G01P15/08

CPC classification number: B81B3/0072 ,  B81B2201/032 ,  H01L41/0933 ,  H01L41/094

Abstract: A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such that movement of the movable structure is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device is in an inactive state.

Abstract translation: 形成在半导体衬底上的微型或纳米机电换能器装置包括可移动结构，其被布置成响应于致动结构的致动而是可移动的。 可移动结构包括机械结构，其包括具有第一热响应特性和第一机械应力响应特性的至少一个机械层，所述致动结构的至少一层，所述至少一层具有与 第一热响应特性和与第一机械应力响应特性不同的第二机械应力响应特性，具有第三热响应特性和第三机械应力特性的第一补偿层，以及具有第四热响应特性的第二补偿层和 第四机械应力响应特性。 第一和第二补偿层布置成补偿由机械结构和致动结构的至少一个层的不同的第一和第二热响应特性产生的热效应，使得可移动结构的移动基本上与 并且调节由所述机械结构和所述致动结构的所述至少一个层的不同的第一和第二应力响应特性产生的应力效应，使得当所述机电换能器装置 处于非活动状态。

公开(公告)号：US09059677B2

公开(公告)日：2015-06-16

申请号：US13456026

申请日：2012-04-25

Applicant: Alexandre Reinhardt ,  Emmanuel Defay ,  Francois Perruchot

Inventor： Alexandre Reinhardt ,  Emmanuel Defay ,  Francois Perruchot

IPC: H03H9/25 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02 ,  H03H9/05 ,  H03H9/17 ,  H03H9/54 ,  H03H9/64

CPC classification number: H03H9/25 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02228 ,  H03H9/02622 ,  H03H9/02637 ,  H03H9/02669 ,  H03H9/02763 ,  H03H9/02803 ,  H03H9/0542 ,  H03H9/17 ,  H03H9/542 ,  H03H9/6403 ,  H03H2009/02165

Abstract: An electromechanical device having a resonator using acoustic waves propagating laterally within a piezoelectric plane resonant structure and electrodes on a face of said structure. The resonant structure comprises: a transduction region having a transduction length and generating acoustic waves; a free propagation region for the acoustic waves, adjacent to the transduction region and defined the plane of the transduction region; the resonant structure length being equal to an integer number of half-wavelengths, the resonance frequency of said resonator equaling the average propagation velocity of the wave within the structure divided by said wavelength, to adjust the quality factor of the resonator fixed by the length of the resonant structure and the coupling coefficient fixed by the ratio of the transduction length over the length of the resonant structure; the resonant structure defined by the assembly of the transduction region and the propagation region being laterally bounded by reflection regions.

Abstract translation: 一种机电装置，其具有使用在压电平面共振结构内横向传播的声波和在所述结构的面上的电极的谐振器。 谐振结构包括：具有转导长度并产生声波的转导区域; 用于声波的自由传播区域，邻近转导区域并限定换能区域的平面; 谐振结构长度等于半波长的整数，所述谐振器的谐振频率等于结构中的波的平均传播速度除以所述波长，以调整谐振器的质量因子固定的长度 谐振结构和耦合系数由谐振结构长度上的换能长度比固定; 由转导区域和传播区域的组装限定的共振结构由反射区域横向界定。

公开(公告)号：US07196385B2

公开(公告)日：2007-03-27

申请号：US10524560

申请日：2003-08-25

Applicant: Christophe Bureau ,  Christophe Kergueris ,  Francois Perruchot

Inventor： Christophe Bureau ,  Christophe Kergueris ,  Francois Perruchot

IPC: H01L29/84 ,  H01L21/00

CPC classification number: G01L9/0042 ,  A61B5/00 ,  B29C2043/5825 ,  B81B3/0094 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2201/06 ,  B81B2203/0127 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/181 ,  Y10S977/733 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An electromechanical microstructure including a first mechanical part formed in a first electrically conductive material, and which includes a zone deformable in an elastic manner having a thickness value and an exposed surface, and a first organic film having a thickness, present on all of the exposed surface of the deformable zone. The thickness of the first film is such that the elastic response of the deformable zone equipped with the first film does not change by more than 5% compared to the response of the bare deformable zone, or the thickness of the first film is less than ten times the thickness of the deformable zone.

Abstract translation: 一种机电微结构，包括形成在第一导电材料中的第一机械部件，并且包括具有厚度值和暴露表面的弹性变形区域和具有厚度的第一有机膜，存在于所有暴露的 可变形区域的表面。 第一膜的厚度使得配备有第一膜的可变形区域的弹性响应与裸露可变形区域的响应相比不变化多于5％，或者第一膜的厚度小于十 倍的可变形区域的厚度。

公开(公告)号：US20060103018A1

公开(公告)日：2006-05-18

申请号：US10525833

申请日：2003-08-26

Applicant: Christophe Bureau ,  Francois Perruchot ,  Christophe Kergueris

Inventor： Christophe Bureau ,  Francois Perruchot ,  Christophe Kergueris

IPC: H01L23/48

CPC classification number: C25D7/12 ,  B29C2043/5825 ,  C25D9/02

Abstract: The present invention concerns a lining support comprising a plurality of conductive pads (12) associated with a shared addressing contact (18) and means of selecting at least one pad to be lined by electrochemical means among the plurality of pads. In accordance with the invention, the selection means comprise means (20) of shifting a polarisation voltage, connected between the shared addressing contact and at least one pad to be addressed. Application to the lining of conductive pads.

Abstract translation: 本发明涉及一种衬里支撑件，其包括与共享寻址触点（18）相关联的多个导电焊盘（12），以及在多个焊盘之间选择至少一个由电化学装置衬里的衬垫的装置。 根据本发明，选择装置包括移位极化电压的装置（20），其连接在共享寻址触点和至少一个待寻址的焊盘之间。 应用于导电垫的衬里。

公开(公告)号：US20130106243A1

公开(公告)日：2013-05-02

申请号：US13456026

申请日：2012-04-25

Applicant: Alexandre REINHARDT ,  Emmanuel DEFAY ,  Francois PERRUCHOT

Inventor： Alexandre REINHARDT ,  Emmanuel DEFAY ,  Francois PERRUCHOT

IPC: H03H9/25

CPC classification number: H03H9/25 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02228 ,  H03H9/02622 ,  H03H9/02637 ,  H03H9/02669 ,  H03H9/02763 ,  H03H9/02803 ,  H03H9/0542 ,  H03H9/17 ,  H03H9/542 ,  H03H9/6403 ,  H03H2009/02165

Abstract: An electromechanical device having a resonator using acoustic waves propagating laterally within a piezoelectric plane resonant structure and electrodes on a face of said structure. The resonant structure comprises: a transduction region having a transduction length and generating acoustic waves; a free propagation region for the acoustic waves, adjacent to the transduction region and defined the plane of the transduction region; the resonant structure length being equal to an integer number of half-wavelengths, the resonance frequency of said resonator equaling the average propagation velocity of the wave within the structure divided by said wavelength, to adjust the quality factor of the resonator fixed by the length of the resonant structure and the coupling coefficient fixed by the ratio of the transduction length over the length of the resonant structure; the resonant structure defined by the assembly of the transduction region and the propagation region being laterally bounded by reflection regions.

Abstract translation: 一种机电装置，其具有使用在压电平面共振结构内横向传播的声波和在所述结构的面上的电极的谐振器。 谐振结构包括：具有转导长度并产生声波的转导区域; 用于声波的自由传播区域，邻近转导区域并限定换能区域的平面; 谐振结构长度等于半波长的整数，所述谐振器的谐振频率等于结构中的波的平均传播速度除以所述波长，以调整谐振器的质量因子固定的长度 谐振结构和耦合系数由谐振结构长度上的换能长度比固定; 由转导区域和传播区域的组装限定的共振结构由反射区域横向界定。

公开(公告)号：US08349660B2

公开(公告)日：2013-01-08

申请号：US12693867

申请日：2010-01-26

Applicant: Gilles Delapierre ,  Bernard Diem ,  Francois Perruchot

Inventor： Gilles Delapierre ,  Bernard Diem ,  Francois Perruchot

IPC: H01L21/00

CPC classification number: B81C1/00293 ,  B81C2203/0145 ,  G01P1/023 ,  G01P15/0802 ,  H01L23/10 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A process for closure of at least one cavity intended to encapsulate or be part of a microelectronic device, comprising the following steps: a) Producing a cavity in a first substrate comprising a first layer traversed by an opening forming an access to the cavity; b) Producing a portion of bond material around the opening, on a surface of the first layer located on the side opposite the cavity; c) Producing, on a second substrate, a portion of fusible material, with a deposition of the fusible material on the second substrate and the use of a mask; d) Placing the portion of fusible material in contact with the portion of bond material; e) Forming a plug for the opening, which adheres to the portion of bond material, by melting and then solidification of the fusible material; f) Separating the plug and the second substrate.

Abstract translation: 一种用于封闭旨在封装或成为微电子器件的一部分的至少一个空腔的方法，包括以下步骤：a）在第一衬底中产生空腔，该第一衬底包括由形成对腔的通路的开口穿过的第一层; b）在位于与空腔相对的一侧的第一层的表面上，在开口周围产生粘合材料的一部分; c）在第二基板上产生可熔材料的一部分，在第二基板上沉积可熔材料并使用掩模; d）将可熔材料的一部分放置在与粘合材料部分接触的位置; e）通过熔化然后固化可熔材料，形成粘合到粘合材料部分上的开口的塞子; f）分离插头和第二基板。

公开(公告)号：US20100067747A1

公开(公告)日：2010-03-18

申请号：US12522074

申请日：2008-01-03

Applicant: Francois Perruchot ,  Andre Rouzaud

Inventor： Francois Perruchot ,  Andre Rouzaud

IPC: G06K9/00 ,  G06F7/04

CPC classification number: G06K9/0012 ,  G06K9/0002

Abstract: A device for recognizing an individual, including a sensor including a plurality of sensitive members having a contact area on which a portion likely to be that of the individual to be recognized is applied, a measurement mechanism connected to the sensitive members to supply information on local contact forces generated by the portion applied on the contact area, and a processor connected to the sensor to determine from the local contact forces a morphological characteristic of the individual to be recognized. The measurement mechanism also supplies information relating to at least another physical magnitude related to the contact, and the processor determines from the other physical magnitude a physiological characteristic of the individual to be recognized.

Abstract translation: 一种用于识别个体的装置，包括具有多个敏感部件的传感器，所述敏感部件具有接触区域，在该接触区域上应用可识别个体部分的部分;连接到敏感部件的测量机构，以提供关于本地 由施加在接触区域上的部分产生的接触力，以及连接到传感器的处理器，以便从局部接触确定要识别的个体的形态特征。 所述测量机构还提供与至少与所述接触相关的另一物理量值的信息，并且所述处理器从另一物理量度确定要识别的个体的生理特征。

公开(公告)号：US08736145B2

公开(公告)日：2014-05-27

申请号：US13128032

申请日：2009-11-25

Applicant: Lianjun Liu ,  Sergio Pacheco ,  Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey

Inventor： Lianjun Liu ,  Sergio Pacheco ,  Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey

IPC: H01L41/06 ,  H01L41/09

CPC classification number: B81B3/0072 ,  B81B2201/032 ,  H01L41/0933 ,  H01L41/094

Abstract: A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer having a first thermal response characteristic, at least one layer of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer. The thermal compensation layer is different to the at least one layer and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.

Abstract translation: 形成在半导体衬底上的微型或纳米机电换能器装置包括可移动结构，其被布置成响应于致动结构的致动而是可移动的。 可移动结构包括具有至少一个具有第一热响应特性的机械层的机械结构，至少一层致动结构具有不同于第一热响应特性的第二热响应特性，以及至少具有至少 一个热补偿层。 热补偿层不同于至少一个层，并且被布置成补偿由机械层和致动结构的至少一个层产生的热效应，使得可移动结构的运动基本上与温度变化无关 。

公开(公告)号：US08513042B2

公开(公告)日：2013-08-20

申请号：US13320579

申请日：2010-06-15

Applicant: Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

Inventor： Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

IPC: H01L21/00

CPC classification number: B81C1/00666 ,  B81B2203/0118 ,  B81C2201/0167 ,  B81C2201/0169

Abstract: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.

Abstract translation: 一种形成机电换能器装置的方法包括在固定结构上形成机电换能器装置的可移动结构和致动结构，其中可移动结构被布置成在机电换能器装置的操作中相对于固定结构可移动 响应致动结构的致动。 该方法还包括在提供应力修剪层之后，在可移动结构的至少一部分上提供应力修剪层，将可移动结构从固定结构释放以提供释放的机电换能器装置，以及在释放可移动结构之后，改变应力 释放的机电换能器装置的应力修剪层，使得当机电换能器装置处于关闭状态时，可移动结构相对于固定结构偏转预定量。

公开(公告)号：US20120056308A1

公开(公告)日：2012-03-08

申请号：US13320579

申请日：2010-06-15

Applicant: Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

Inventor： Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

IPC: H01L29/66 ,  H01L21/66

CPC classification number: B81C1/00666 ,  B81B2203/0118 ,  B81C2201/0167 ,  B81C2201/0169

Abstract: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.

Abstract translation: 一种形成机电换能器装置的方法包括在固定结构上形成机电换能器装置的可移动结构和致动结构，其中可移动结构被布置成在机电换能器装置的操作中相对于固定结构可移动 响应致动结构的致动。 该方法还包括在提供应力修剪层之后，在可移动结构的至少一部分上提供应力修剪层，将可移动结构从固定结构释放以提供释放的机电换能器装置，以及在释放可移动结构之后，改变应力 释放的机电换能器装置的应力修剪层，使得当机电换能器装置处于关闭状态时，可移动结构相对于固定结构偏转预定量。