Bend resistant cable
    1.
    发明授权
    Bend resistant cable 有权
    耐弯曲电缆

    公开(公告)号:US08710371B2

    公开(公告)日:2014-04-29

    申请号:US13010131

    申请日:2011-01-20

    IPC分类号: H01B5/00

    摘要: A bend resistant cable includes a stranded wire including a plurality of child stranded conductors each having a plurality of strands, the plurality of child stranded conductors being circumferentially disposed and stranded. A stranding direction of the plurality of strands of the child stranded conductors circumferentially adjacent to each other is different from each other.

    摘要翻译: 抗弯曲电缆包括绞合线,其包括多个子绞线,每条导线各自具有多个线束,所述多个子绞合导体沿周向设置并绞合。 子束绞合导体的多个股线彼此周向相邻的绞合方向彼此不同。

    CABLE WITH LESS RESIDUAL BEND
    2.
    发明申请
    CABLE WITH LESS RESIDUAL BEND 有权
    电缆不具有残留弯曲

    公开(公告)号:US20120175146A1

    公开(公告)日:2012-07-12

    申请号:US13341324

    申请日:2011-12-30

    IPC分类号: H01B7/18 H01B3/00

    CPC分类号: H01B7/225 H01B7/04

    摘要: A cable with less residual bend includes a sheath as an outermost layer; and a thread for correcting a residual bend. The thread is provided inside the sheath and disposed in parallel with a center axis of the cable along a longitudinal direction of the cable.

    摘要翻译: 具有较少残余弯曲的电缆包括护套作为最外层; 以及用于校正残余弯曲的螺纹。 螺纹设置在护套内并且沿着电缆的纵向方向与电缆的中心轴平行设置。

    Piezoelectric thin film element
    3.
    发明申请
    Piezoelectric thin film element 审中-公开
    压电薄膜元件

    公开(公告)号:US20120025668A1

    公开(公告)日:2012-02-02

    申请号:US13137580

    申请日:2011-08-26

    摘要: A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer, and a top electrode on a substrate. The piezoelectric layer includes, as a main phase, a perovskite-type oxide. The bottom electrode has a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms. The bottom electrode has a (111) preferential orientation in a direction perpendicular to the substrate.

    摘要翻译: 压电薄膜元件包括底电极,压电层和衬底上的顶电极。 作为主相,压电体层包含钙钛矿型氧化物。 底部电极在算术平均粗糙度Ra中的表面粗糙度不大于0.86nm,均方根粗糙度Rms下的表面粗糙度不大于1.1nm。 底部电极在垂直于衬底的方向上具有(111)优先取向。

    Piezoelectric Thin Film Device
    5.
    发明申请
    Piezoelectric Thin Film Device 有权
    压电薄膜器件

    公开(公告)号:US20090189490A1

    公开(公告)日:2009-07-30

    申请号:US12358379

    申请日:2009-01-23

    IPC分类号: H01L41/04

    摘要: A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and a upper electrode, in which the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0

    摘要翻译: 根据本发明的压电薄膜器件包括下部电极,压电薄膜和上部电极,其中压电薄膜由(K1-xNax)NbO3表示的碱性铌氧化物基钙钛矿材料形成( 0

    Substrate with a piezoelectric thin film
    6.
    发明申请
    Substrate with a piezoelectric thin film 有权
    具有压电薄膜的基板

    公开(公告)号:US20090096328A1

    公开(公告)日:2009-04-16

    申请号:US12073237

    申请日:2008-03-03

    摘要: A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to deference between the first and the second thermal expansion coefficients is 10 m or more at room temperature.

    摘要翻译: 基板具有第一热膨胀系数,并且压电薄膜具有第二热膨胀系数。 压电薄膜主要由具有钙钛矿结构的铌酸钾钠(K,Na)NbO 3组成。 由于第一和第二热膨胀系数之间的差异,由于设置有压电薄膜的基板的翘曲的曲率半径在室温下为10μm以上。

    Piezoelectric element
    7.
    发明申请
    Piezoelectric element 有权
    压电元件

    公开(公告)号:US20090075066A1

    公开(公告)日:2009-03-19

    申请号:US12073238

    申请日:2008-03-03

    IPC分类号: B32B33/00

    摘要: A piezoelectric film formed above a Si substrate. The piezoelectric film is formed of a potassium sodium niobate expressed by a general formula (K,Na)NbO3 with perovskite structure. A film thickness of the piezoelectric film is within a range from 0.3 μm to 10 μm. An intermediate film is formed between the Si substrate and the piezoelectric film. The intermediate film generates a stress in a compressive direction in the piezoelectric film.

    摘要翻译: 在Si衬底上形成的压电薄膜。 压电薄膜由钙钛矿结构的通式(K,Na)NbO 3表示的铌酸钾钠形成。 压电膜的膜厚在0.3μm〜10μm的范围内。 在Si衬底和压电膜之间形成中间膜。 中间膜在压电膜中产生压缩方向的应力。

    Cable with less residual bend
    9.
    发明授权
    Cable with less residual bend 有权
    电缆残余弯曲较少

    公开(公告)号:US08872033B2

    公开(公告)日:2014-10-28

    申请号:US13341324

    申请日:2011-12-30

    IPC分类号: H01B7/18 H01B3/00

    CPC分类号: H01B7/225 H01B7/04

    摘要: A cable with less residual bend includes a sheath as an outermost layer; and a thread for correcting a residual bend. The thread is provided inside the sheath and disposed in parallel with a center axis of the cable along a longitudinal direction of the cable.

    摘要翻译: 具有较少残余弯曲的电缆包括护套作为最外层; 以及用于校正残余弯曲的螺纹。 螺纹设置在护套内并且沿着电缆的纵向方向与电缆的中心轴平行设置。

    Conducting path
    10.
    发明授权
    Conducting path 有权
    进路

    公开(公告)号:US08853532B2

    公开(公告)日:2014-10-07

    申请号:US13200922

    申请日:2011-10-05

    IPC分类号: H01B7/42 H02G3/03

    CPC分类号: H02G3/03

    摘要: A conducting path includes a plurality of cables, and a cable clamp for clamping the plurality of cables together. The cable clamp includes a single metal plate molded along a perimeter of the plurality of cables, an attachment flange formed by overlapping both ends of the metal plate, and a cable supporting member for supporting the plurality of cables between the cable supporting member and the metal plate. The cable supporting member includes a coolant passage formed therein for passing a coolant to cool the plurality of cables in a longitudinal direction of the plurality of cables.

    摘要翻译: 导电路径包括多根电缆,以及用于将多根电缆夹紧在一起的电缆夹。 电缆夹包括沿着多根电缆的周边模制的单个金属板,通过将金属板的两端重叠而形成的附接凸缘和用于将电缆支撑构件和金属之间的多个电缆支撑的电缆支撑构件 盘子。 电缆支撑构件包括形成在其中的冷却剂通道,用于使冷却剂沿着多根电缆的纵向方向冷却多个电缆。