摘要:
A bend resistant cable includes a stranded wire including a plurality of child stranded conductors each having a plurality of strands, the plurality of child stranded conductors being circumferentially disposed and stranded. A stranding direction of the plurality of strands of the child stranded conductors circumferentially adjacent to each other is different from each other.
摘要:
A cable with less residual bend includes a sheath as an outermost layer; and a thread for correcting a residual bend. The thread is provided inside the sheath and disposed in parallel with a center axis of the cable along a longitudinal direction of the cable.
摘要:
A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer, and a top electrode on a substrate. The piezoelectric layer includes, as a main phase, a perovskite-type oxide. The bottom electrode has a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms. The bottom electrode has a (111) preferential orientation in a direction perpendicular to the substrate.
摘要:
A piezoelectric thin film element includes a substrate, a lower electrode, a piezoelectric thin film, and an upper electrode. The lower electrode, the piezoelectric thin film and the upper electrode are formed on the substrate. The piezoelectric thin film includes a polycrystal thin film including crystal grains, an alkali niobium oxide based perovskite structure represented by a general formula: (K1-xNax)NbO3 (0.4
摘要:
A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and a upper electrode, in which the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0
摘要:
A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to deference between the first and the second thermal expansion coefficients is 10 m or more at room temperature.
摘要:
A piezoelectric film formed above a Si substrate. The piezoelectric film is formed of a potassium sodium niobate expressed by a general formula (K,Na)NbO3 with perovskite structure. A film thickness of the piezoelectric film is within a range from 0.3 μm to 10 μm. An intermediate film is formed between the Si substrate and the piezoelectric film. The intermediate film generates a stress in a compressive direction in the piezoelectric film.
摘要:
A cable having a cable structure comprising a stranded wire formed by stranding a plurality of stranded conductors and an inclusion that is more deformable than the stranded conductors, wherein a plurality of stranded conductors are arranged on a circumference of the inclusion.
摘要:
A cable with less residual bend includes a sheath as an outermost layer; and a thread for correcting a residual bend. The thread is provided inside the sheath and disposed in parallel with a center axis of the cable along a longitudinal direction of the cable.
摘要:
A conducting path includes a plurality of cables, and a cable clamp for clamping the plurality of cables together. The cable clamp includes a single metal plate molded along a perimeter of the plurality of cables, an attachment flange formed by overlapping both ends of the metal plate, and a cable supporting member for supporting the plurality of cables between the cable supporting member and the metal plate. The cable supporting member includes a coolant passage formed therein for passing a coolant to cool the plurality of cables in a longitudinal direction of the plurality of cables.