公开(公告)号：US20090298452A1

公开(公告)日：2009-12-03

申请号：US12473625

申请日：2009-05-28

申请人： Futoshi Ota

发明人： Futoshi Ota

IPC分类号： H04B1/18

CPC分类号： H03J1/0091

摘要： A receiver according to the present invention has a reception unit which receives reception signals; a storage unit which stores a band table, in which a plurality of frequency bands serving as scanning targets are registered so that the frequency bands correspond to band identifiers, respectively, and a link table, in which any number of the band identifiers registered in the band table are registered so that the band identifiers correspond to a link identifier; a control unit which, when the link identifier is specified, refers to the band table and the link table, obtains the frequency bands corresponding to the link identifier, carries out scanning within the frequency band for each of the frequency bands, and sequentially sets reception frequencies of the reception signals; and a frequency synthesizer.

摘要翻译： 根据本发明的接收机具有接收接收信号的接收单元; 存储单元，其存储频带表，其中分别用作扫描目标的多个频带使得频带对应于频带标识符，以及链路表，其中登记在所述频带标识符中的任何数量的频带标识符 登录频带表，使得频带标识符对应于链路标识符; 控制单元，当指定了链路标识符时，参考带表和链路表，获得与链路标识符相对应的频带，对频带进行频带内的扫描，并顺序地设置接收 接收信号的频率; 和频率合成器。

公开(公告)号：US08349087B2

公开(公告)日：2013-01-08

申请号：US12654987

申请日：2010-01-12

申请人： Hidetaka Nambu ,  Nobuo Hironaga ,  Futoshi Ota ,  Toru Yokoyama ,  Osamu Sugawara ,  Ryo Satou ,  Masato Tamura

发明人： Hidetaka Nambu ,  Nobuo Hironaga ,  Futoshi Ota ,  Toru Yokoyama ,  Osamu Sugawara ,  Ryo Satou ,  Masato Tamura

IPC分类号： B08B3/12 ,  B08B6/00 ,  B08B7/00 ,  B08B7/02 ,  C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC分类号： H01L21/67389

摘要： A semiconductor device manufacturing method includes loading plural dry-etched wafers one by one in a container having a side door so as to be disposed substantially horizontally and in layers vertically therein; and blowing out a purge gas horizontally to those wafers loaded in the container for 30 sec or more after all the subject wafers are loaded in the container while the side door is open.

摘要翻译： 半导体器件制造方法包括：将多个干蚀刻晶片一个接一个地装载在具有侧门的容器中，以便基本上水平布置并且在其中垂直地设置; 并且在侧门打开时将所有的被摄体晶片装载到容器中之后，将装载在容器中的那些晶片水平地吹扫吹扫气体30秒以上。

公开(公告)号：US20100184296A1

公开(公告)日：2010-07-22

申请号：US12654987

申请日：2010-01-12

申请人： Hidetaka Nambu ,  Nobuo Hironaga ,  Futoshi Ota ,  Toru Yokoyama ,  Osamu Sugawara ,  Ryo Satou ,  Masato Tamura

发明人： Hidetaka Nambu ,  Nobuo Hironaga ,  Futoshi Ota ,  Toru Yokoyama ,  Osamu Sugawara ,  Ryo Satou ,  Masato Tamura

IPC分类号： H01L21/306 ,  H01L21/3065

CPC分类号： H01L21/67389

摘要： A semiconductor device manufacturing method includes loading plural dry-etched wafers one by one in a container having a side door so as to be disposed substantially horizontally and in layers vertically therein; and blowing out a purge gas horizontally to those wafers loaded in the container for 30 sec or more after all the subject wafers are loaded in the container while the side door is open.

摘要翻译： 半导体器件制造方法包括：将多个干蚀刻晶片一个接一个地装载在具有侧门的容器中，以便基本上水平布置并且在其中垂直地设置; 并且在侧门打开时将所有的被摄体晶片装载到容器中之后，将装载在容器中的那些晶片水平地吹扫吹扫气体30秒以上。