公开(公告)号：US08778802B2

公开(公告)日：2014-07-15

申请号：US11802532

申请日：2007-05-23

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： C03C15/00 ,  C03C25/68 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3212 ,  B24B37/04 ,  B24B57/02 ,  H01L21/02074 ,  H01L21/31053

摘要： A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.

摘要翻译： 抛光方法包括：使设置在转台上的抛光垫与转台一起旋转，并且通过使用旋转的抛光垫来抛光衬底的表面，同时在前侧向抛光垫的表面提供化学流体 的相对于抛光垫的表面的倾斜方向。

公开(公告)号：US20130119013A1

公开(公告)日：2013-05-16

申请号：US13423018

申请日：2012-03-16

申请人： Yukiteru MATSUI ,  Masako KODERA ,  Hiroshi TOMITA ,  Gaku MINAMIHABA ,  Akifumi GAWASE

发明人： Yukiteru MATSUI ,  Masako KODERA ,  Hiroshi TOMITA ,  Gaku MINAMIHABA ,  Akifumi GAWASE

IPC分类号： B44C1/22 ,  B05C9/06

CPC分类号： H01L21/30625 ,  B24B37/044 ,  B24B37/24 ,  H01L21/67075 ,  H01L21/67219

摘要： According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.

摘要翻译： 根据一个实施例，公开了用于化学平面化的方法。 该方法可以包括在具有不规则性的待处理膜上形成表面层。 表面层沿着不规则结合或吸附到待处理的膜上以抑制被处理膜的溶解。 该方法可以包括在待处理膜的处理溶液中平面化待处理膜，通过旋转待处理膜和加工体，同时待处理膜与处理体接触 通过表面层除去凹凸部的凸部的表面层，同时将表面层留在凹凸部的凹部上，使凸部的溶解度大于凹部的溶解度。

公开(公告)号：US20130095661A1

公开(公告)日：2013-04-18

申请号：US13428163

申请日：2012-03-23

申请人： Akifumi GAWASE ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda

发明人： Akifumi GAWASE ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda

IPC分类号： H01L21/302 ,  B24B53/017 ,  B24B37/015 ,  B24B37/013 ,  B24B37/07

CPC分类号： H01L21/76224 ,  C09G1/02 ,  H01L21/31053

摘要： According to one embodiment, a CMP method includes starting a polishing of a silicon oxide film by using a slurry including a silicon oxide abrasive and a polishing stopper film including a silicon nitride film, and stopping the polishing when the polishing stopper is exposed. The slurry includes a first water-soluble polymer with a weight-average molecular weight of 50000 or more and 5000000 or less, and a second water-soluble polymer with a weight-average molecular weight of 1000 or more and 10000 or less.

摘要翻译： 根据一个实施例，CMP方法包括通过使用包括氧化硅研磨剂的浆料和包括氮化硅膜的抛光阻挡膜来开始研磨氧化硅膜，并且在抛光停止剂暴露时停止抛光。 浆料包括重均分子量为50000以上且5000000以下的第一水溶性聚合物和重均分子量为1000以上且10000以下的第二水溶性聚合物。

公开(公告)号：US20130078784A1

公开(公告)日：2013-03-28

申请号：US13425979

申请日：2012-03-21

申请人： Gaku MINAMIHABA ,  Akifumi Gawase ,  Yukiteru Matsui ,  Hajime Eda

发明人： Gaku MINAMIHABA ,  Akifumi Gawase ,  Yukiteru Matsui ,  Hajime Eda

IPC分类号： H01L21/762 ,  C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76224

摘要： According to one embodiment, the CMP slurry includes abrasive particles made of colloidal silica in an amount of 0.5 to 3% by mass of a total mass of the CMP slurry, and a polycarboxylic acid having a weight average molecular weight of from 500 to 10,000, in an amount of 0.1 to 1% by mass of the total mass of the CMP slurry. 50 to 90% by mass of the abrasive particles each has a primary particle diameter of 3 to 10 nm. The CMP slurry has a pH within a range of 2.5 to 4.5.

摘要翻译： 根据一个实施方案，CMP浆料包括由胶浆二氧化硅制成的磨料颗粒，其量为CMP浆料的总质量的0.5至3质量％，以及重均分子量为500至10,000的多元羧酸， 其量为CMP浆料总质量的0.1〜1质量％。 50〜90质量％的研磨粒子的一次粒径为3〜10nm。 CMP浆料的pH在2.5至4.5的范围内。

公开(公告)号：US20130040456A1

公开(公告)日：2013-02-14

申请号：US13427950

申请日：2012-03-23

申请人： Hajime EDA ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Akifumi Gawase

发明人： Hajime EDA ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Akifumi Gawase

IPC分类号： H01L21/768

CPC分类号： H01L21/7684 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67219

摘要： According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a groove is formed in a insulating film on a semiconductor substrate. An underlayer film is formed on the insulating film. A metal film is formed on the underlayer film. First polishing, in which the metal film is removed, is performed by supplying a first CMP slurry containing metal ions. The surfaces of the polishing pad and the semiconductor substrate are cleaned by supplying organic acid and pure water. Second polishing, in which the underlayer film is removed from the portion other than the groove, is performed by supplying a second CMP slurry different from the first CMP slurry.

摘要翻译： 根据一个实施例，提供一种制造半导体器件的方法。 在该方法中，在半导体衬底上的绝缘膜中形成沟槽。 在绝缘膜上形成下层膜。 在下层膜上形成金属膜。 通过提供含有金属离子的第一CMP浆料来进行其中去除金属膜的第一次抛光。 通过供给有机酸和纯水来清洗抛光垫和半导体基板的表面。 通过供给不同于第一CMP浆料的第二CMP浆料，进行从凹槽以外的部分除去下层膜的第二研磨。

公开(公告)号：US20110192420A1

公开(公告)日：2011-08-11

申请号：US13020088

申请日：2011-02-03

申请人： Nobuyuki KURASHIMA ,  Gaku Minamihaba

发明人： Nobuyuki KURASHIMA ,  Gaku Minamihaba

IPC分类号： B08B1/00 ,  B08B3/00

CPC分类号： B08B1/04 ,  H01L21/67046

摘要： In one embodiment, a cleaning apparatus, including, supporting bodies supporting and rotating a substrate, each of a first and a second cleaning member, having a circular shape and rotating around a rotational symmetry axis, periphery portions of the cleaning members being able to contact to opposed surfaces of the substrate, each of a first brush-cleaning member and a second brush-cleaning member having a groove with a V-shape cross section being widened upwards, a brush with a cleaning function being formed on a slope plane of the groove, the cleaning members being able to shift to contact to the slope planes, respectively, first cleaning solution supply portions supplying a first cleaning solution dispersed resin particles to the surfaces, and second cleaning solution supply portions supplying a second cleaning solution to peripheries of the cleaning members and which are arranged to contact to the slope planes, respectively.

摘要翻译： 在一个实施例中，一种清洁装置，包括支撑和旋转基板的支撑体，第一和第二清洁构件中的每一个，具有圆形并围绕旋转对称轴旋转，清洁构件的周边部分能够接触 在基板的相对表面上，具有第一刷清洁构件和具有V形横截面的槽的第二刷清洁构件中的每一个向上加宽，具有清洁功能的刷子形成在 所述清洁部件分别能够转移到与所述倾斜平面接触的第一清洗溶液供应部分，将第一清洁溶液分散在所述表面上的分散树脂颗粒;以及第二清洁溶液供应部分， 清洁构件，并分别与斜面接触。

公开(公告)号：US07951717B2

公开(公告)日：2011-05-31

申请号：US11967584

申请日：2007-12-31

申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： H01L21/302 ,  H01L21/461 ,  C09K3/14 ,  C09G1/02

CPC分类号： H01L21/02074

摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

摘要翻译： 提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm， 和四甲基氢氧化铵。 另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。 两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。

公开(公告)号：US20110062374A1

公开(公告)日：2011-03-17

申请号：US12926358

申请日：2010-11-12

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212 ,  H01L22/26

摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.

摘要翻译： 提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

公开(公告)号：US20100093585A1

公开(公告)日：2010-04-15

申请号：US12638607

申请日：2009-12-15

申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： C11D1/74

CPC分类号： H01L21/02074 ,  C11D1/22 ,  C11D3/30 ,  C11D3/3765 ,  C11D11/0047

摘要： A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

摘要翻译： 提供后CMP处理液，其包括水，其表面上具有羧基和磺酰基，一次粒径为10至60nm的树脂颗粒，具有羧基的第一表面活性剂，具有磺酰基的第二表面活性剂 基团和四甲基氢氧化铵。 树脂颗粒以0.01至1重量％的浓度掺入。 处理液的pH为4〜9，并且以10nm / min以下的速度显示绝缘膜和导电膜的抛光速度。

公开(公告)号：US20090068841A1

公开(公告)日：2009-03-12

申请号：US12289326

申请日：2008-10-24

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/304

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。