公开(公告)号：US08957476B2

公开(公告)日：2015-02-17

申请号：US13722801

申请日：2012-12-20

申请人： Glenn A. Glass ,  Daniel B. Aubertine ,  Anand S. Murthy ,  Gaurav Thareja ,  Stephen M. Cea

发明人： Glenn A. Glass ,  Daniel B. Aubertine ,  Anand S. Murthy ,  Gaurav Thareja ,  Stephen M. Cea

IPC分类号： H01L21/8234 ,  H01L27/088

CPC分类号： H01L29/16 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0669 ,  H01L29/1033 ,  H01L29/785 ,  H01L29/7853

摘要： Embodiments of the present disclosure provide techniques and configurations associated with conversion of thin transistor elements from silicon (Si) to silicon germanium (SiGe). In one embodiment, a method includes providing a semiconductor substrate having a channel body of a transistor device disposed on the semiconductor substrate, the channel body comprising silicon, forming a cladding layer comprising germanium on the channel body, and annealing the channel body to cause the germanium to diffuse into the channel body. Other embodiments may be described and/or claimed.

摘要翻译： 本公开的实施例提供了与从硅（Si）到硅锗（SiGe）的薄晶体管元件的转换相关联的技术和配置。 在一个实施例中，一种方法包括提供具有设置在半导体衬底上的晶体管器件的沟道体的半导体衬底，沟道体包括硅，在沟道本体上形成包含锗的包覆层，并使通道体退火， 锗扩散到通道体内。 可以描述和/或要求保护其他实施例。

公开(公告)号：US09728464B2

公开(公告)日：2017-08-08

申请号：US13560513

申请日：2012-07-27

申请人： Glenn A. Glass ,  Daniel B. Aubertine ,  Anand S. Murthy ,  Gaurav Thareja ,  Tahir Ghani

发明人： Glenn A. Glass ,  Daniel B. Aubertine ,  Anand S. Murthy ,  Gaurav Thareja ,  Tahir Ghani

IPC分类号： H01L21/335 ,  H01L21/8238 ,  H01L29/10

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/8258 ,  H01L29/1054

摘要： Techniques are disclosed for customization of fin-based transistor devices to provide a diverse range of channel configurations and/or material systems within the same integrated circuit die. In accordance with one example embodiment, sacrificial fins are removed and replaced with custom semiconductor material of arbitrary composition and strain suitable for a given application. In one such case, each of a first set of the sacrificial fins is recessed or otherwise removed and replaced with a p-type material, and each of a second set of the sacrificial fins is recessed or otherwise removed and replaced with an n-type material. The p-type material can be completely independent of the process for the n-type material, and vice-versa. Numerous other circuit configurations and device variations are enabled using the techniques provided herein.

公开(公告)号：US20140175543A1

公开(公告)日：2014-06-26

申请号：US13722801

申请日：2012-12-20

申请人： Glenn A. Glass ,  Daniel B. Aubertine ,  Anand S. Murthy ,  Gaurav Thareja ,  Stephen M. Cea

发明人： Glenn A. Glass ,  Daniel B. Aubertine ,  Anand S. Murthy ,  Gaurav Thareja ,  Stephen M. Cea

IPC分类号： H01L21/8234 ,  H01L27/088

CPC分类号： H01L29/16 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0669 ,  H01L29/1033 ,  H01L29/785 ,  H01L29/7853

摘要： Embodiments of the present disclosure provide techniques and configurations associated with conversion of thin transistor elements from silicon (Si) to silicon germanium (SiGe). In one embodiment, a method includes providing a semiconductor substrate having a channel body of a transistor device disposed on the semiconductor substrate, the channel body comprising silicon, forming a cladding layer comprising germanium on the channel body, and annealing the channel body to cause the germanium to diffuse into the channel body. Other embodiments may be described and/or claimed.

摘要翻译： 本公开的实施例提供了与从硅（Si）到硅锗（SiGe）的薄晶体管元件的转换相关联的技术和配置。 在一个实施例中，一种方法包括提供具有设置在半导体衬底上的晶体管器件的沟道体的半导体衬底，沟道体包括硅，在沟道本体上形成包含锗的包覆层，并使通道体退火， 锗扩散到通道体内。 可以描述和/或要求保护其他实施例。

公开(公告)号：US20140027860A1

公开(公告)日：2014-01-30

申请号：US13560513

申请日：2012-07-27

申请人： Glenn A. Glass ,  Daniel B. Aubertine ,  Anand S. Murthy ,  Gaurav Thareja ,  Tahir Ghani

发明人： Glenn A. Glass ,  Daniel B. Aubertine ,  Anand S. Murthy ,  Gaurav Thareja ,  Tahir Ghani

IPC分类号： H01L27/088 ,  H01L21/336

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/8258 ,  H01L29/1054

摘要： Techniques are disclosed for customization of fin-based transistor devices to provide a diverse range of channel configurations and/or material systems within the same integrated circuit die. In accordance with one example embodiment, sacrificial fins are removed and replaced with custom semiconductor material of arbitrary composition and strain suitable for a given application. In one such case, each of a first set of the sacrificial fins is recessed or otherwise removed and replaced with a p-type material, and each of a second set of the sacrificial fins is recessed or otherwise removed and replaced with an n-type material. The p-type material can be completely independent of the process for the n-type material, and vice-versa. Numerous other circuit configurations and device variations are enabled using the techniques provided herein.

摘要翻译： 公开了用于定制鳍式晶体管器件以提供同一集成电路管芯内的不同范围的通道配置和/或材料系统的技术。 根据一个示例性实施例，除去牺牲翅片并用适合于给定应用的任意组合和应变的定制半导体材料代替。 在一种这样的情况下，第一组牺牲翅片中的每一个凹陷或以其它方式移除并用p型材料代替，并且第二组牺牲翅片中的每一个凹入或以其它方式移除并且用n型 材料。 p型材料可以完全独立于n型材料的工艺，反之亦然。 使用本文提供的技术可实现许多其它电路配置和设备变化。