公开(公告)号：US08350485B2

公开(公告)日：2013-01-08

申请号：US13073726

申请日：2011-03-28

Applicant: Ghulam Hasnain

Inventor： Ghulam Hasnain

IPC: H05B39/06 ,  H05B1/02

CPC classification number: H05B33/0815 ,  F21K9/232 ,  F21K9/238 ,  F21K9/64 ,  F21V3/12 ,  F21V17/002 ,  F21V17/164 ,  F21V23/005 ,  F21V23/0442 ,  F21V23/0457 ,  F21V29/74 ,  F21V29/85 ,  F21V29/90 ,  F21Y2115/10 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/181 ,  H05B33/0803 ,  H05B33/0869 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: An LED-based lighting device and method for making the same are disclosed. The lighting device includes an LED light source mounted on a heat sink, a power adaptor, and a controller. The power adaptor is configured to be interchangeable with a conventional incandescent bulb power adapter. The controller provides an average current to the LED light source when power is coupled to the device via the power adaptor. The average current causes the LED light source to generate light of a predetermined standard intensity that is substantially independent of variations in the LED light source from device to device. In one aspect of the invention, the LED light source includes a plurality of LEDs connected in series, the LEDs are bonded to the heat sink and connected to one another in series by wire bonds and to conducting traces on the heat sink.

Abstract translation: 公开了一种基于LED的照明装置及其制造方法。 照明装置包括安装在散热器上的LED光源，电源适配器和控制器。 电源适配器配置为可与传统白炽灯电源适配器互换。 当电源通过电源适配器耦合到设备时，控制器提供平均电流到LED光源。 平均电流使得LED光源产生基本上与LED光源从器件到器件的变化无关的预定标准强度的光。 在本发明的一个方面，LED光源包括串联连接的多个LED，LED被结合到散热器并且通过引线接合而彼此串联连接并且在散热片上导电迹线。

公开(公告)号：US07939839B2

公开(公告)日：2011-05-10

申请号：US12208502

申请日：2008-09-11

Applicant: Ghulam Hasnain

Inventor： Ghulam Hasnain

IPC: H01L33/00

CPC classification number: H01L27/153 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light source and method for making the same are disclosed. The light source includes a substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact electrically connected to the first layer in the second segment.

Abstract translation: 公开了一种光源及其制造方法。 光源包括基板和被分割成段的发光结构。 发光结构包括沉积在衬底上的第一导电类型的第一层半导体材料，覆盖第一层的有源层和覆盖有源层的第一导电类型的相反导电类型的第二半导体材料层 。 障碍物将发光结构分成彼此电隔离的第一和第二段。 串联连接电极将第一段中的第一层连接到第二段中的第二层。 电源触头电连接到第一段中的第二层，以及电连接到第二段中的第一层的第二电源触头。

公开(公告)号：US07915621B2

公开(公告)日：2011-03-29

申请号：US12779813

申请日：2010-05-13

Applicant: Ghulam Hasnain

Inventor： Ghulam Hasnain

IPC: H01L21/02

CPC classification number: H01L33/20

Abstract: A light source and method for fabricating the same are disclosed. The light source includes a substrate and a light emitting structure. The substrate has a first surface and a second surface, the second surface including a curved, convex surface with respect to the first surface of the substrate. The light emitting structure includes a first layer of a material of a first conductivity type overlying the first surface, an active layer overlying the first layer, the active layer generating light when holes and electrons recombine therein, and a second layer includes a material of a second conductivity type overlying the active layer and a second surface opposite to the first surface. A mirror layer overlies the light emitting structure.

Abstract translation: 公开了一种光源及其制造方法。 光源包括基板和发光结构。 衬底具有第一表面和第二表面，第二表面包括相对于衬底的第一表面的弯曲的凸形表面。 发光结构包括覆盖第一表面的第一导电类型的材料的第一层，覆盖第一层的有源层，当空穴和电子在其中复合时产生光的有源层，以及第二层包括 覆盖有源层的第二导电类型和与第一表面相对的第二表面。 镜面层覆盖发光结构。

公开(公告)号：US20050263780A1

公开(公告)日：2005-12-01

申请号：US11177670

申请日：2005-07-07

Applicant: David Bour ,  Nathan Gardner ,  Werner Goetz ,  Stephen Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher Kocot ,  Mark Hueschen

Inventor： David Bour ,  Nathan Gardner ,  Werner Goetz ,  Stephen Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher Kocot ,  Mark Hueschen

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/06

Abstract: A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.

公开(公告)号：US06534331B2

公开(公告)日：2003-03-18

申请号：US09912803

申请日：2001-07-24

Applicant: Andrew Shuh-Huei Liao ,  Ghulam Hasnain ,  Chihping Kuo ,  Hao-Chung Kuo ,  Zhiqing Shi ,  Minh Ngoc Trieu

Inventor： Andrew Shuh-Huei Liao ,  Ghulam Hasnain ,  Chihping Kuo ,  Hao-Chung Kuo ,  Zhiqing Shi ,  Minh Ngoc Trieu

IPC: H01L2100

CPC classification number: H01S5/18308 ,  H01L33/105 ,  H01L33/145 ,  H01S5/2059

Abstract: A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. The aperture-defining layer is constructed by implanting or diffusing elements into one or more of the mirror layers prior to depositing the remaining mirror layers on top of the aperture-defining layer.

Abstract translation: 可用于构造发光器件的电流限制元件。 电流限制元件包括顶层和孔限定层。 顶层包括对光透明的第一导电类型的顶部半导体材料。 孔径限定层包括孔区域和限制区域。 开口区域包括对光透明的第一导电类型的孔径半导体材料。 限制区域围绕开口区域并且包括被掺杂以提供对电流流动的高电阻的材料。 在将剩余的镜面层沉积在孔限定层的顶部之前，通过将元件植入或漫射到一个或多个镜层中来构造光圈限定层。

公开(公告)号：US5843804A

公开(公告)日：1998-12-01

申请号：US812465

申请日：1997-03-06

Applicant: Chung-Yi Su ,  Ghulam Hasnain ,  James N. Hollenhorst

Inventor： Chung-Yi Su ,  Ghulam Hasnain ,  James N. Hollenhorst

IPC: H01L31/107 ,  H01L31/18

CPC classification number: H01L31/1075

Abstract: A SAM avalanche photodiode formed with an epitaxially regrown guard ring and a planar P-N junction defined between a cap layer and a multiplication layer. The multiplication layer is part of a multi-layer semiconductor platform having a conductivity opposite to the conductivity type of the cap layer, including a light absorption layer, a substrate and an intermediate layer. A second embodiment of the present invention is disclosed including a SAM avalanche photodiode having a guard ring with a variable distribution of impurity dopant concentrations. In addition, a third embodiment of the present invention is disclosed in which a narrow band gap layer completely covers the cap layer and a non-alloy metal contact is formed to completely cover the narrow band gap layer, forming a mirror junction. In this embodiment, incident light is shined through the substrate and reflected from the mirror junction, enhancing the absorption efficiency.

Abstract translation: SAM雪崩光电二极管形成有外延重新生长的保护环和在盖层和乘法层之间限定的平面P-N结。 倍增层是具有与覆盖层的导电类型相反的导电性的多层半导体平台的一部分，包括光吸收层，衬底和中间层。 公开了本发明的第二实施例，其包括具有杂质掺杂剂浓度可变分布的保护环的SAM雪崩光电二极管。 此外，公开了本发明的第三实施例，其中窄带隙层完全覆盖盖层，并且形成非合金金属接触以完全覆盖窄带隙层，形成镜结。 在本实施例中，入射光通过衬底照射并从镜结点反射，提高了吸收效率。

公开(公告)号：US5136603A

公开(公告)日：1992-08-04

申请号：US692746

申请日：1991-04-29

Applicant: Ghulam Hasnain ,  Kuochou Tai

Inventor： Ghulam Hasnain ,  Kuochou Tai

IPC: H01L27/15 ,  H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/183 ,  H01S5/187 ,  H01S5/50

CPC classification number: H01S5/0264 ,  H01S5/183 ,  H01S5/0427 ,  H01S5/18302

Abstract: The present invention is a semiconductor laser having an integral photodiode and/or modulator. The integrated structure comprises a quantum well active region sandwiched between a pair of distributed Bragg reflector stacks for emitting laser light transverse to the planes of growth. An intrinsic layer and a doped semiconductor layer are disposed on one of the reflector stacks for forming, in combination with the outer layer of the stack, a photodiode in the path of emitted light. The diode can be used either to monitor the laser power or to modulate the laser output. The device is particularly suited for fabrication and testing in large arrays and, in addition, has the advantages of a circular, low divergence optical output, inherently single mode operation, and a high two-dimensional packing density.

Abstract translation: 本发明是具有整体光电二极管和/或调制器的半导体激光器。 集成结构包括夹在一对分布布拉格反射器叠层之间的量子阱有源区域，用于发射横切于生长平面的激光。 本征层和掺杂半导体层设置在一个反射器叠层上，用于与发射光的路径中的叠层的外层结合形成光电二极管。 二极管可用于监视激光功率或调制激光输出。 该器件特别适用于大阵列的制造和测试，另外具有圆形，低发散光输出，固有单模操作和高二维封装密度的优点。

公开(公告)号：US20120068604A1

公开(公告)日：2012-03-22

申请号：US12888111

申请日：2010-09-22

Applicant: Ghulam Hasnain ,  Calvin B. Ward

Inventor： Ghulam Hasnain ,  Calvin B. Ward

IPC: F21V29/00 ,  H05B37/02 ,  F21V21/00

CPC classification number: F21K9/275 ,  F21K9/27 ,  F21K9/272 ,  F21V19/001 ,  F21V29/004 ,  F21V29/10 ,  F21V29/70 ,  F21V29/89 ,  F21Y2101/00 ,  F21Y2103/10 ,  F21Y2115/10 ,  H05K1/0209 ,  H05K2201/10106 ,  Y02B20/386

Abstract: A light source that is adapted to replace existing fluorescent tubes in an existing fluorescent light fixture is disclosed. The light source includes a plurality of LEDs mounted on a heat-dissipating structure, first and second plug adapters that mate with the florescent tube connectors of the fluorescent tube the light source is to replace, and a power adapter that converts power from a fluorescent tube ballast presented on the first and second plug adapters to DC power that powers the LEDs. The light source is powered from the output of the existing fluorescent ballast. The light source can utilize the existing metallic enclosure as a heat-radiating surface and/or direct air heat transfer from the surface of the heat-dissipating structure.

Abstract translation: 公开了一种适于替代现有荧光灯中现有荧光管的光源。 光源包括安装在散热结构上的多个LED，与光源要替换的荧光管的荧光管连接器相配合的第一和第二插头适配器，以及从荧光管转换功率的电力适配器 将第一和第二插头适配器上的镇流器提供给为LED供电的直流电源。 光源由现有荧光灯镇流器的输出端供电。 光源可以利用现有的金属外壳作为散热表面和/或从散热结构的表面直接进行空气热传递。

公开(公告)号：US20110169407A1

公开(公告)日：2011-07-14

申请号：US13073726

申请日：2011-03-28

Applicant: Ghulam Hasnain

Inventor： Ghulam Hasnain

IPC: H01J7/44 ,  H01J9/42 ,  H01J1/62

CPC classification number: H05B33/0815 ,  F21K9/232 ,  F21K9/238 ,  F21K9/64 ,  F21V3/12 ,  F21V17/002 ,  F21V17/164 ,  F21V23/005 ,  F21V23/0442 ,  F21V23/0457 ,  F21V29/74 ,  F21V29/85 ,  F21V29/90 ,  F21Y2115/10 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/181 ,  H05B33/0803 ,  H05B33/0869 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: An LED-based lighting device and method for making the same are disclosed. The lighting device includes an LED light source mounted on a heat sink, a power adaptor, and a controller. The power adaptor is configured to be interchangeable with a conventional incandescent bulb power adapter. The controller provides an average current to the LED light source when power is coupled to the device via the power adaptor. The average current causes the LED light source to generate light of a predetermined standard intensity that is substantially independent of variations in the LED light source from device to device. In one aspect of the invention, the LED light source includes a plurality of LEDs connected in series, the LEDs are bonded to the heat sink and connected to one another in series by wire bonds and to conducting traces on the heat sink.

Abstract translation: 公开了一种基于LED的照明装置及其制造方法。 照明装置包括安装在散热器上的LED光源，电源适配器和控制器。 电源适配器配置为可与传统白炽灯电源适配器互换。 当电源通过电源适配器耦合到设备时，控制器提供平均电流到LED光源。 平均电流使得LED光源产生基本上与LED光源从器件到器件的变化无关的预定标准强度的光。 在本发明的一个方面，LED光源包括串联连接的多个LED，LED被结合到散热器并且通过引线接合而彼此串联连接并且在散热片上导电迹线。

公开(公告)号：US20110068672A1

公开(公告)日：2011-03-24

申请号：US12888055

申请日：2010-09-22

Applicant: Ghulam Hasnain

Inventor： Ghulam Hasnain

IPC: H01J61/52

CPC classification number: F21V29/70 ,  F21K9/00 ,  F21V23/005 ,  F21V29/507 ,  H01L2224/48091 ,  H05K1/0203 ,  H05K1/0206 ,  H05K1/05 ,  H05K2201/10106 ,  H01L2924/00014

Abstract: A light source having a substrate with a plurality of component LED light generators mounted thereon is disclosed. The substrate has a first metallic surface characterized by a normal that points in a normal direction. The first metallic surface is in contact with air over the first metallic surface. The component LED light generators are mounted directly on the first metallic surface. Each component LED light generator includes an LED characterized by an operating temperature and emitting light in the normal direction. Each LED generator generates more than 0.5 watts of heat. The component LED light generators are spaced apart on the first metallic surface such that the operating temperature remains less than 75° C. above the air temperature. In one aspect of the invention, the first metallic surface surrounding each component LED light generator radiates an amount of heat equal to the heat generated by that component LED light generator.

Abstract translation: 公开了具有安装在其上的多个部件LED发光体的基板的光源。 衬底具有第一金属表面，其特征在于法线方向上指向法线。 第一金属表面与第一金属表面上的空气接触。 组件LED发光器直接安装在第一金属表面上。 每个元件LED发光器包括一个LED，其特征在于工作温度并在正常方向上发光。 每个LED发生器产生超过0.5瓦特的热量。 组件LED发光器在第一金属表面上间隔开，使得工作温度保持在高于空气温度的75℃以上。 在本发明的一个方面，围绕每个部件LED光发生器的第一金属表面辐射相当于由该部件LED光发生器产生的热量的热量。