Low-cost ternary composite for use in vias in glass-ceramic structures
    3.
    发明授权
    Low-cost ternary composite for use in vias in glass-ceramic structures 失效
    用于玻璃陶瓷结构通孔的低成本三元复合材料

    公开(公告)号:US5192622A

    公开(公告)日:1993-03-09

    申请号:US743439

    申请日:1991-08-09

    IPC分类号: C22C32/00 H01L23/498

    摘要: A ternary-alloy/glass composite suitable for use in vias in glass-ceramic electronic structures includes gold, palladium, and either platinum or silver in the alloy where the gold is less than 50% by weight of the alloy. The alloy is combined with glass frit where the glass is present as 5-50% by volume in the composition. The ternary-alloy glass composite is sintered in the glass-ceramic structure and provides a hermetic seal. Chips and pins can be bonded directly to the ternary-alloy/glass composite using a eutectic braze without causing cracks in the glass-ceramic. The ternary-alloy/glass composite has good adhesion with glass-ceramics and is useful in vias in electronic structures.

    摘要翻译: 适合用于玻璃 - 陶瓷电子结构通孔的三元合金/玻璃复合物包括合金中的金,钯和铂或银,其中金小于合金的50重量%。 该合金与玻璃料组合,其中玻璃在组合物中的存在量为5-50体积%。 三元合金玻璃复合材料在玻璃 - 陶瓷结构中烧结并提供气密密封。 芯片和引脚可以使用共晶钎焊直接粘合到三元合金/玻璃复合材料上,而不会在玻璃陶瓷中产生裂纹。 三元合金/玻璃复合材料与玻璃陶瓷具有良好的粘合性,可用于电子结构的通孔。

    Thermal enhancement approach using solder compositions in the liquid state
    4.
    发明授权
    Thermal enhancement approach using solder compositions in the liquid state 失效
    使用焊料组合物处于液态的热增强方法

    公开(公告)号:US06281573B1

    公开(公告)日:2001-08-28

    申请号:US09052296

    申请日:1998-03-31

    IPC分类号: H05K720

    摘要: Solder compositions are introduced to interface between an IC chip and its associated heat exchanger cover. The solder compositions have a solidus-liquidus temperature range that encompasses the IC chip operational temperature range. The solder composition has the desired property of absorbing and rejecting heat energy by changing state or phase with each temperature rise and decline that result from temperature fluctuations associated with the thermal cycles of the integrated circuit chips. A path for high thermal conduction (low thermal resistance) from the IC chip to the heat exchanger to the ambient air is provided by an electronic module cover, configured as a cap with a heat exchanger formed or attached as a single construction, and made of the same material as the substrate, or made with materials of compatible thermal coefficients of expansion to mitigate the effects of vertical displacement during thermal cycling. The cap-heat exchanger cover is constructed to be compliant, and to contact both the IC chip and substrate.

    摘要翻译: 引入焊料组合物到IC芯片与其相关联的热交换器盖之间的界面。 焊料组合物具有包含IC芯片工作温度范围的固相线 - 液相线温度范围。 焊料组合物具有通过随着每个温度升高改变状态或相位而吸收和排除热能的性能,并且由与集成电路芯片的热循环相关的温度波动导致的下降。 通过电子模块盖提供从IC芯片到热交换器到周围空气的高热传导(低热阻)的路径,该电子模块盖被构造为具有形成或附接为单个结构的热交换器的盖,并且由 与基材相同的材料,或由具有相容的热膨胀系数的材料制成,以减轻热循环期间垂直位移的影响。 盖 - 热交换器盖被构造成柔性,并且与IC芯片和基板接触。

    Structure and method for corrosion and stress-resistant interconnecting
metallurgy
    6.
    发明授权
    Structure and method for corrosion and stress-resistant interconnecting metallurgy 失效
    腐蚀和耐应力相互连接冶金的结构和方法

    公开(公告)号:US5266522A

    公开(公告)日:1993-11-30

    申请号:US894384

    申请日:1992-06-05

    摘要: This invention relates generally to structure and method for corrosion- and stress-resistant interconnecting metallurgy, and more specifically to new structures and methods for corrosion- and stress-resistant interconnecting multilayer metallurgical pad comprising sequentially deposited layers of chromium, nickel and noble or relatively noble metal as the interconnecting metallurgy, or multilayer metallurgical pad comprising sequentially deposited layers of chromium, soluble noble metal, nickel and noble or relatively noble metal as the interconnecting metallurgy. This invention also relates to an improved multilayer metallurgical pad or metallurgical structure for mating at least a portion of a pin or a connector or a wire to a substrate.

    摘要翻译: 本发明一般涉及耐腐蚀和耐应力相互连接冶金的结构和方法,更具体地涉及用于耐腐蚀和耐应力的互连多层冶金垫的新结构和方法,其包括依次沉积的铬,镍和贵金属或相对贵重的层 金属作为互连冶金,或多层冶金垫,其包括依次沉积的铬层,可溶性贵金属,镍和贵金属或相对贵重金属作为互连冶金。 本发明还涉及用于将销或连接器或电线的至少一部分配合到衬底的改进的多层冶金垫或冶金结构。

    Process for brazing
    7.
    发明授权
    Process for brazing 失效
    钎焊工艺

    公开(公告)号:US4465223A

    公开(公告)日:1984-08-14

    申请号:US514137

    申请日:1983-07-15

    IPC分类号: B23K35/00 B23K35/30 B23K1/04

    CPC分类号: B23K35/3013 B23K35/001

    摘要: A method of brazing two surfaces together with a Au/Sn brazing solder. The method includes the additional step of providing a film of Cu, for example on one of the surfaces, in addition to the Au/Sn brazing solder.

    摘要翻译: 一种用Au / Sn钎焊焊料将两个表面钎焊的方法。 该方法还包括除了Au / Sn钎焊焊料之外还提供例如在其中一个表面上的Cu膜的附加步骤。