Method and apparatus for producing large, single-crystals of aluminum nitride
    6.
    发明授权
    Method and apparatus for producing large, single-crystals of aluminum nitride 有权
    用于生产大型单晶氮化铝的方法和装置

    公开(公告)号:US07776153B2

    公开(公告)日:2010-08-17

    申请号:US11265909

    申请日:2005-11-03

    Abstract: A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in the crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline low dislocation density AlN at the nucleation site. High efficiency ultraviolet light emitting diodes and ultraviolet laser diodes are fabricated on low defect density AlN substrates, which are cut from the low dislocation density AlN crystals. Bulk crystals of ZnO may also be produced using the method.

    Abstract translation: 具有约10,000cm-2或更低位错密度的AlN的本体单晶的方法和装置包括其中具有Al和N2源材料的晶体生长外壳,其能够形成本体晶体。 该装置相对于晶体生长封壳内的Al保持大于化学计量压力的N2分压,同时在超大气压力下保持晶体生长封壳中的总蒸气压。 在晶体生长封壳中提供至少一个成核位置,并且提供相对于晶体生长封壳中的其它位置来冷却成核位置。 然后沉积Al和N 2蒸气以在成核位点生长单晶低位错密度AlN。 在低缺陷密度AlN衬底上制造高效紫外发光二极管和紫外激光二极管,其从低位错密度AlN晶体切割。 也可以使用该方法制造ZnO的块状晶体。

    Powder metallurgy crucible for aluminum nitride crystal growth
    8.
    发明申请
    Powder metallurgy crucible for aluminum nitride crystal growth 审中-公开
    粉末冶金坩埚用于氮化铝晶体生长

    公开(公告)号:US20080134957A1

    公开(公告)日:2008-06-12

    申请号:US11728027

    申请日:2007-03-23

    Abstract: A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. Embodiments include a plurality of grains and a wall thickness of at least about 1.5 times the average grain size. In particular embodiments, the crucible includes first and second layers of grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be fabricated from tungsten-rhenium (W—Re) alloys; rhenium (Re); tantalum monocarbide (TaC); tantalum nitride (Ta2N); hafnium nitride (HfN); a mixture of tungsten and tantalum (W—Ta); tungsten (W); and combinations thereof.

    Abstract translation: 提供了用于生长III族氮化物(例如氮化铝)单晶的坩埚。 坩埚包括限定内部晶体生长腔的细长壁结构。 实施例包括多个晶粒和至少约平均晶粒尺寸的1.5倍的壁厚。 在具体实施方案中,坩埚包括第一和第二颗粒层,第一层包括形成内表面的颗粒,第二层与第一层重叠。 坩埚可以由钨 - 铼(W-Re)合金制成; 铼(Re); 钽单体碱(TaC); 氮化钽(Ta 2 N); 氮化铪(HfN); 钨和钽的混合物(W-Ta); 钨(W); 及其组合。

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