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公开(公告)号:US06187679B1
公开(公告)日:2001-02-13
申请号:US08807739
申请日:1997-02-26
申请人: Cyril Cabral, Jr. , Lawrence Alfred Clevenger , Francois Max d'Heurle , James McKell Edwin Harper , Randy William Mann , Glen Lester Miles , James Spiros Nakos , Ronnen Andrew Roy , Katherine L. Saenger
发明人: Cyril Cabral, Jr. , Lawrence Alfred Clevenger , Francois Max d'Heurle , James McKell Edwin Harper , Randy William Mann , Glen Lester Miles , James Spiros Nakos , Ronnen Andrew Roy , Katherine L. Saenger
IPC分类号: H01L2144
CPC分类号: C30B1/02 , C30B29/10 , H01L21/28518 , H01L29/665
摘要: Low resistivity titanium silicide, and semiconductor devices incorporating the same, may be formed by titanium alloy comprising titanium and 1-20 atomic percent refractory metal deposited in a layer overlying a silicon substrate, the substrate is then heated to a temperature sufficient to substantially form C54 phase titanium silicide. The titanium alloy may further comprise silicon and the refractory metal may be Mo, W, Ta, Nb, V, or Cr, and more preferably is Ta or Nb. The heating step used to form the low resistivity titanium silicide is performed at a temperature less than 900° C., and more preferably between about 600-700° C.
摘要翻译: 低电阻率钛硅化物和包含该低电阻率钛硅化物的半导体器件可以由在钛硅衬底上沉积的钛和1-20原子百分比的难熔金属的钛合金形成,然后将衬底加热至足以基本形成C54 相钛硅化物。 钛合金还可以包含硅,难熔金属可以是Mo,W,Ta,Nb,V或Cr,更优选是Ta或Nb。 用于形成低电阻率硅化钛的加热步骤在低于900℃的温度下进行,更优选在约600-700℃之间
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公开(公告)号:US5828131A
公开(公告)日:1998-10-27
申请号:US586046
申请日:1996-01-16
申请人: Cyril Cabral, Jr. , Lawrence Alfred Clevenger , Francois Max d'Heurle , James McKell Edwin Harper , Randy William Mann , Glen Lester Miles , James Spiros Nakos , Ronnen Andrew Roy , Katherine L. Saenger
发明人: Cyril Cabral, Jr. , Lawrence Alfred Clevenger , Francois Max d'Heurle , James McKell Edwin Harper , Randy William Mann , Glen Lester Miles , James Spiros Nakos , Ronnen Andrew Roy , Katherine L. Saenger
IPC分类号: C23C20/02 , C30B1/02 , H01L21/28 , H01L21/285 , H01L21/336 , H01L29/45
CPC分类号: C30B1/02 , C30B29/10 , H01L21/28518 , H01L29/665
摘要: Low resistivity titanium silicide, and semiconductor devices incorporating the same, may be formed by titanium alloy comprising titanium and 1-20 atomic percent refractory metal deposited in a layer overlying a silicon substrate, the substrate is then heated to a temperature sufficient to substantially form C54 phase titanium silicide. The titanium alloy may further comprise silicon and the refractory metal may be Mo, W, Ta, Nb, V, or Cr, and more preferably is Ta or Nb. The heating step used to form the low resistivity titanium silicide is performed at a temperature less than 900.degree. C., and more preferably between about 600.degree.-700.degree. C.
摘要翻译: 低电阻率钛硅化物和包含该低电阻率钛硅化物的半导体器件可以由在钛硅衬底上沉积的钛和1-20原子百分比的难熔金属的钛合金形成,然后将衬底加热至足以基本形成C54 相钛硅化物。 钛合金还可以包含硅,难熔金属可以是Mo,W,Ta,Nb,V或Cr,更优选是Ta或Nb。 用于形成低电阻率硅化钛的加热步骤在低于900℃的温度下进行,更优选在约600℃至700℃之间。
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