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公开(公告)号:US08853805B2
公开(公告)日:2014-10-07
申请号:US13169987
申请日:2011-06-27
Applicant: Jayhoon Chung , Catherine Beth Vartuli , Guoda Lian
Inventor: Jayhoon Chung , Catherine Beth Vartuli , Guoda Lian
Abstract: A test structure for measuring strain in the channel of transistors. A method of correlating transistor performance with channel strain.
Abstract translation: 用于测量晶体管通道中的应变的测试结构。 一种使晶体管性能与通道应变相关的方法。
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公开(公告)号:US20120325009A1
公开(公告)日:2012-12-27
申请号:US13169987
申请日:2011-06-27
Applicant: Jayhoon CHUNG , Catherine Beth VARTULI , Guoda LIAN
Inventor: Jayhoon CHUNG , Catherine Beth VARTULI , Guoda LIAN
IPC: H01L23/544 , G01B7/16
Abstract: A test structure for measuring strain in the channel of transistors. A method of correlating transistor performance with channel strain.
Abstract translation: 用于测量晶体管通道中的应变的测试结构。 一种使晶体管性能与通道应变相关的方法。
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公开(公告)号:US20110084209A1
公开(公告)日:2011-04-14
申请号:US12901069
申请日:2010-10-08
Applicant: Jayhoon CHUNG , Guoda LIAN
Inventor: Jayhoon CHUNG , Guoda LIAN
IPC: G01N23/00
CPC classification number: G01N23/20058
Abstract: Lattice strain is reproducibly measured using geometric phase analysis (GPA) of a high angle annular dark field mode scanning transmission electron microscope (HAADF-STEM). Errors caused by beam shift (also known as fly-back error) between scan lines are eliminated.
Abstract translation: 使用高角度环形暗场模式扫描透射电子显微镜(HAADF-STEM)的几何相位分析(GPA)可重复地测量晶格应变。 消除了由扫描线之间的波束偏移引起的误差(也称为回扫误差)。
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