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61 条记录 (耗时 0.022 秒)

    SENSOR HAVING ORGANIC FIELD EFFECT TRANSISTORS
    1.
    发明申请
    SENSOR HAVING ORGANIC FIELD EFFECT TRANSISTORS 审中-公开
    传感器有机场效应晶体管

    公开(公告)号：US20090066345A1

    公开(公告)日：2009-03-12

    申请号：US10599470

    申请日：2005-03-30

    申请人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Grzegorz Darlinski ,  Rainer Waser ,  Ralf Brederlow

    发明人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Grzegorz Darlinski ,  Rainer Waser ,  Ralf Brederlow

    IPC分类号： G01R27/26 ,  H01L51/05

    CPC分类号： G06K9/00053

    摘要： A force sensor based on an organic field effect transistor applied on a substrate is disclosed. In one embodiment, a mechanical force acting on the transistor causes a change in its source-drain voltage or its source-drain current which corresponds to said force and which can in each case be detected as measurement quantity for the acting force, a diaphragm-based pressure sensor that uses a force sensor of this type, a one- or two-dimensional position sensor that uses a multiplicity of force sensors of this type, and a fingerprint sensor that uses a multiplicity of such force sensors.

    摘要翻译： 公开了一种基于施加在衬底上的有机场效应晶体管的力传感器。 在一个实施例中，作用在晶体管上的机械力引起其源极 - 漏极电压或其源极 - 漏极电流的变化，其对应于所述力，并且在每种情况下都可以被检测为作用力的测量量， 使用这种力传感器的基于压力的传感器，使用这种类型的多个力传感器的一维或二维位置传感器，以及使用多个这样的力传感器的指纹传感器。

    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same
    5.
    发明授权
    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same 有权
    具有由有机材料制成的栅极电介质的薄膜场效应晶体管及其制造方法

    公开(公告)号：US07326957B2

    公开(公告)日：2008-02-05

    申请号：US11134512

    申请日：2005-05-23

    申请人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Günter Schmid

    发明人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Günter Schmid

    IPC分类号： H01L29/08

    CPC分类号： H01L29/4908 ,  H01L51/0097 ,  H01L51/0516 ,  H01L51/0545

    摘要： The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.

    摘要翻译： 薄膜场效应晶体管的栅介质层形成为具有至少一个自组装分子单层（SAM）和由绝缘聚合物制成的电介质聚合物层的多层系统。 具有10至50纳米的相对较小的层厚度，多层栅极介质层确保低泄漏电流，并且能够在低于5伏特的低电源电压下实现薄膜场效应晶体管的故障安全操作。 栅极电介质层对于高达约20伏特的电压是鲁棒的，并且允许使用多种不同的材料来实现底层电极。

    Semiconductor memory device and method for fabricating a semiconductor memory device
    6.
    发明申请
    Semiconductor memory device and method for fabricating a semiconductor memory device 审中-公开
    半导体存储器件及半导体存储器件的制造方法

    公开(公告)号：US20060249769A1

    公开(公告)日：2006-11-09

    申请号：US11361648

    申请日：2006-02-24

    申请人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Gunter Schmid

    发明人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Gunter Schmid

    IPC分类号： H01L29/94

    CPC分类号： G11C11/22 ,  B82Y10/00 ,  H01L27/11502 ,  H01L28/55

    摘要： A semiconductor memory device and method for fabricating a semiconductor memory device is disclosed. In one embodiment, the semiconductor memory device using at least one ferroelectric layer which has at least one electrically non-conductive polymer and ferroelectric nanoparticles distributed in the polymer. In another embodiment, the present invention provides a method for fabricating a semiconductor memory device using at least one ferroelectric layer. It is thus possible to fabricate a semiconductor memory device using at least one ferroelectric layer on inexpensive and, if appropriate, flexible substrates.

    摘要翻译： 公开了一种用于制造半导体存储器件的半导体存储器件和方法。 在一个实施例中，使用至少一个铁电层的半导体存储器件，该铁电层具有分布在聚合物中的至少一种非导电聚合物和铁电纳米粒子。 在另一个实施例中，本发明提供一种制造使用至少一个铁电层的半导体存储器件的方法。 因此，可以在廉价且适当的柔性基板上使用至少一个铁电层来制造半导体存储器件。

    Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric
    10.
    发明授权
    Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric 有权
    用有机化合物的自组装单层作为栅极电介质的电镀场效应晶体管的方法

    公开(公告)号：US07390703B2

    公开(公告)日：2008-06-24

    申请号：US11062766

    申请日：2005-02-22

    申请人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Stefan Braun

    发明人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Stefan Braun

    IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L51/40

    CPC分类号： H01L51/0516 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/31687

    摘要： A method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric includes through-plating by patterning a gate electrode material, and bringing an organic compound having dielectric properties into contact with the contact hole material and the gate electrode material. A contact hole material and the gate electrode material are at least partially uncovered. The contact hole is material not identical to the gate electrode material. A self-assembled monolayer of the organic compound is formed above the gate electrode material. The method also includes depositing and patterning the source and drain contacts without removing the self-assembled monolayer of the organic compound, and depositing a semiconductor material.

    摘要翻译： 用有机化合物的自组装单层作为栅极电介质的电镀场效应晶体管的方法包括通过图案化栅电极材料的通镀，以及使具有介电特性的有机化合物与接触孔材料接触， 栅电极材料。 接触孔材料和栅电极材料至少部分地不被覆盖。 接触孔是与栅电极材料不同的材料。 有机化合物的自组装单层形成在栅电极材料上方。 该方法还包括在不去除有机化合物的自组装单层和沉积半导体材料的情况下沉积和图案化源极和漏极接触。