公开(公告)号：US08890024B2

公开(公告)日：2014-11-18

申请号：US13485726

申请日：2012-05-31

Applicant: Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

Inventor： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC: B23K26/06 ,  H01L21/268 ,  B23K26/073 ,  B23K26/00 ,  H01L21/324 ,  H01L21/20

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract translation: 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US08853059B2

公开(公告)日：2014-10-07

申请号：US13461495

申请日：2012-05-01

Applicant: Haifan Liang ,  Jeroen Van Duren ,  Sandeep Nijhawan

Inventor： Haifan Liang ,  Jeroen Van Duren ,  Sandeep Nijhawan

IPC: H01L21/20

CPC classification number: H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method for high temperature selenization of Cu—In—Ga metal precursor films comprises ramping the precursor film to a temperature between about 350 C and about 450 C in an inert gas and at a pressure between about 1 atmosphere and about 2 atmospheres. A partial selenization is performed at a temperature between about 350 C and about 450 C in a Se-containing atmosphere. The film is then ramped to a temperature between about 450 C and about 550 C in an inert gas and at a pressure between about 1 atmosphere and about 2 atmospheres, followed by an additional selenization step at a temperature between about 450 C and about 550 C in a Se-containing atmosphere. The film is then annealed at a temperature between about 550 C and about 650 C in an inert gas.

Abstract translation: Cu-In-Ga金属前体膜的高温硒化方法包括在惰性气体中和约1大气压至约2个大气压之间的压力下将前驱体膜倾斜至约350℃至约450℃的温度。 部分硒化在含硒气氛中在约350℃至约450℃的温度下进行。 然后将膜在惰性气体中并在约1大气压和约2大气压之间的压力下升高至约450℃至约550℃之间的温度，随后在约450℃至约550℃之间的温度下进行另外的硒化步骤 在含Se的气氛中。 然后将膜在惰性气体中在约550℃和约650℃之间的温度下退火。

公开(公告)号：US20130164886A1

公开(公告)日：2013-06-27

申请号：US13596439

申请日：2012-08-28

Applicant: Haifan Liang ,  Jeroen Van Durent

Inventor： Haifan Liang ,  Jeroen Van Durent

IPC: H01L31/18

CPC classification number: H01L31/065 ,  H01L21/02472 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/0749 ,  Y02E10/541

Abstract: Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for forming a Cu—In—Ga layer followed by partial or full selenization. This results in a higher Ga concentration at the back interface. The substrate is then exposed to an aluminum CVD precursor while the substrate is still in the selenization equipment to deposit a thin Al layer. The substrate is then exposed to a Se source to fully convert the absorber layer. This results in a higher Al concentration at the front of the absorber.

Abstract translation: 描述了用于在具有渐变组成和分级带隙的TFPV装置中形成CIGS吸收层的方法。 描述了利用Al增加吸收层前表面带隙的方法。 描述了用于形成Cu-In-Ga层的方法，然后进行部分或全部硒化。 这导致在后界面处的较高的Ga浓度。 然后将衬底暴露于铝CVD前体，同时衬底仍然在硒化设备中以沉积薄的Al层。 然后将衬底暴露于Se源以完全转换吸收层。 这导致吸收器前面的较高的Al浓度。

公开(公告)号：US20120261395A1

公开(公告)日：2012-10-18

申请号：US13485726

申请日：2012-05-31

Applicant: Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

Inventor： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC: B23K26/06 ,  B23K26/08

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract translation: 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US20120234801A1

公开(公告)日：2012-09-20

申请号：US13485752

申请日：2012-05-31

Applicant: Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash J. MAYUR ,  Aaron HUNTER ,  Bruce ADAMS ,  Joseph Michael RANISH

Inventor： Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash J. MAYUR ,  Aaron HUNTER ,  Bruce ADAMS ,  Joseph Michael RANISH

IPC: B23K26/00

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US07611976B2

公开(公告)日：2009-11-03

申请号：US11428758

申请日：2006-07-05

Applicant: Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

Inventor： Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

IPC: H01L21/425

CPC classification number: H01L21/268 ,  H01L21/28035 ,  H01L21/324

Abstract: Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from about 1,050° C. to about 1,400° C., for about 500 milliseconds or less, such as about 100 milliseconds or less.

Abstract translation: 本发明的实施方案通常提供了在衬底上形成掺杂的含硅材料的方法。 在一个实施例中，该方法提供在电介质层上沉积多晶层并且用掺杂剂注入多晶层以形成掺杂浓度在约1×10 19原子/ cm 3至约1×10 21原子/ cm 3范围内的掺杂多晶层，其中 掺杂多晶层含有硅或可含有锗，碳或硼。 在快速热退火期间，衬底可以被加热到约800℃或更高，例如约1000℃的温度。 随后，掺杂多晶层可以暴露于激光退火并加热至约1000℃或更高的温度，例如在约1050℃至约1400℃的温度下，持续约500毫秒或更短 ，例如约100毫秒或更少。

公开(公告)号：US20070243721A1

公开(公告)日：2007-10-18

申请号：US11763226

申请日：2007-06-14

Applicant: LUC AUTRYVE ,  Christopher Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

Inventor： LUC AUTRYVE ,  Christopher Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

IPC: H01L21/3105

CPC classification number: H01L21/26513 ,  H01L21/268

Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.

Abstract translation: 一种处理衬底的方法，包括在衬底上沉积包含无定形碳的层，然后将衬底暴露于电磁辐射，在足以将该层加热至至少至少的温度的条件下，具有约600nm至约1000nm之间的一个或多个波长 提供约300℃。 任选地，该层还包括选自氮，硼，磷，氟及其组合的掺杂剂。 在一个方面，包含无定形碳的层是抗反射涂层和吸收层，其吸收电磁辐射并退火衬底的顶表面层。 在一个方面，基板在激光退火工艺中暴露于电磁辐射。

公开(公告)号：US07262106B2

公开(公告)日：2007-08-28

申请号：US10758758

申请日：2004-01-15

Applicant: Luc Van Autryve ,  Chris D. Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash J. Mayur ,  Mark Yam ,  Wendy H. Yeh ,  Richard A. Brough

Inventor： Luc Van Autryve ,  Chris D. Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash J. Mayur ,  Mark Yam ,  Wendy H. Yeh ,  Richard A. Brough

IPC: H01L21/336 ,  H01L21/425

CPC classification number: H01L21/3146 ,  H01L21/0276 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324

Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.

Abstract translation: 一种处理衬底的方法，包括在衬底上沉积包含无定形碳的层，然后将衬底暴露于电磁辐射，在足以将该层加热至至少至少的温度的条件下，具有约600nm至约1000nm之间的一个或多个波长 提供约300℃。 任选地，该层还包括选自氮，硼，磷，氟及其组合的掺杂剂。 在一个方面，包含无定形碳的层是抗反射涂层和吸收层，其吸收电磁辐射并退火衬底的顶表面层。 在一个方面，基板在激光退火工艺中暴露于电磁辐射。

公开(公告)号：US20050074986A1

公开(公告)日：2005-04-07

申请号：US10758758

申请日：2004-01-15

Applicant: Luc Autryve ,  Chris Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

Inventor： Luc Autryve ,  Chris Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

IPC: H01L21/027 ,  H01L21/265 ,  H01L21/268 ,  H01L21/314 ,  H01L21/324 ,  H01L21/20

CPC classification number: H01L21/3146 ,  H01L21/0276 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324

Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.

Abstract translation: 一种处理衬底的方法，包括在衬底上沉积包含无定形碳的层，然后将衬底暴露于电磁辐射，在足以将该层加热至至少至少的温度的条件下，具有约600nm至约1000nm之间的一个或多个波长 提供约300℃。 任选地，该层还包括选自氮，硼，磷，氟及其组合的掺杂剂。 在一个方面，包含无定形碳的层是抗反射涂层和吸收层，其吸收电磁辐射并退火衬底的顶表面层。 在一个方面，基板在激光退火工艺中暴露于电磁辐射。

公开(公告)号：US20050074956A1

公开(公告)日：2005-04-07

申请号：US10679189

申请日：2003-10-03

Applicant: Luc Autryve ,  Chris Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

Inventor： Luc Autryve ,  Chris Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

IPC: H01L21/027 ,  H01L21/265 ,  H01L21/268 ,  H01L21/314 ,  H01L21/324 ,  H01L21/425 ,  H01L21/26 ,  H01L21/31 ,  H01L21/42 ,  H01L21/469 ,  H01L21/477

CPC classification number: H01L21/3146 ,  H01L21/0276 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324

Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.

Abstract translation: 提供一种处理衬底的方法，包括在衬底上沉积包含非晶碳的层，然后激光退火衬底。 任选地，该层还包括选自氮，硼，磷，氟及其组合的掺杂剂。 一方面，包含无定形碳的层是抗反射涂层和吸收层，其吸收由激光发射的电磁辐射并退火衬底的顶表面层。