公开(公告)号：US20120180983A1

公开(公告)日：2012-07-19

申请号：US13411120

申请日：2012-03-02

Applicant: TETSUYA ISHIKAWA ,  RICK J. ROBERTS ,  HELEN R. ARMER ,  LEON VOLFOVSKI ,  JAY D. PINSON ,  MICHAEL RICE ,  DAVID H. QUACH ,  MOHSEN S. SALEK ,  ROBERT LOWRANCE ,  JOHN A. BACKER ,  WILLIAM TYLER WEAVER ,  CHARLES CARLSON ,  CHONGYANG WANG ,  JEFFREY HUDGENS ,  HARALD HERCHEN ,  BRIAN LUE

Inventor： TETSUYA ISHIKAWA ,  RICK J. ROBERTS ,  HELEN R. ARMER ,  LEON VOLFOVSKI ,  JAY D. PINSON ,  MICHAEL RICE ,  DAVID H. QUACH ,  MOHSEN S. SALEK ,  ROBERT LOWRANCE ,  JOHN A. BACKER ,  WILLIAM TYLER WEAVER ,  CHARLES CARLSON ,  CHONGYANG WANG ,  JEFFREY HUDGENS ,  HARALD HERCHEN ,  BRIAN LUE

IPC: H01L21/324 ,  H01L21/477 ,  F25B29/00 ,  B25J11/00 ,  H01L21/677

CPC classification number: H01L21/67225 ,  G03B27/32 ,  G03D13/006 ,  G03F7/40 ,  G05B19/41825 ,  G05B2219/40476 ,  G05B2219/45031 ,  G05B2219/49137 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67754 ,  H01L21/6831 ,  H01L21/6838 ,  H01L21/68707 ,  H01L22/26 ,  Y02P90/087 ,  Y10S414/135 ,  Y10S414/136 ,  Y10T29/53187 ,  Y10T29/5323

Abstract: The present invention generally provides a cluster tool for processing a substrate. In one embodiment, the cluster tool comprises at least one processing rack, which comprises a first plurality of substrate processing chambers that are positioned adjacent to each other and aligned in a first direction, a second plurality of substrate processing chambers that are positioned adjacent to each other and adjacent to at least one of the first plurality of substrate processing chambers, the second plurality of substrate processing chambers being positioned in a second direction relative to the first direction, a first shuttle robot movable in the first direction for moving substrates between each of the first plurality of substrate processing chambers, and a second shuttle robot movable in the second direction for moving substrates between each of the second plurality of substrate processing chambers.

Abstract translation: 本发明通常提供一种用于处理衬底的簇工具。 在一个实施例中，集群工具包括至少一个处理架，其包括彼此相邻并且沿第一方向排列的第一多个基板处理室，与第二多个基板处理室相邻定位的第二多个基板处理室 第二多个基板处理室相对于第一方向位于第二方向上，第一梭形机器人可在第一方向上移动，以在每个基板处理室中的每一个之间移动基板 第一多个基板处理室，以及可沿第二方向移动的第二梭形机器人，用于在每个第二多个基板处理室之间移动基板。

公开(公告)号：US20110000426A1

公开(公告)日：2011-01-06

申请号：US12823802

申请日：2010-06-25

Applicant: Harald Herchen

Inventor： Harald Herchen

IPC: B05D3/02 ,  B05D5/12 ,  H05B3/02

CPC classification number: H05B3/283 ,  H01L21/67103 ,  H01L21/67109

Abstract: A substrate processing apparatus for heating a substrate is provided. The substrate processing apparatus can include a top and bottom planar member. A heater layer can be disposed between the top and the bottom planar member and held in place by evacuating a region between the two planar members. The heater layer can be made of alternating insulating and conducting layers with heater elements formed on the conducting layers in predetermined pattern.

Abstract translation: 提供了一种用于加热基板的基板处理装置。 基板处理装置可以包括顶部和底部平面部件。 加热器层可以设置在顶部和底部平面构件之间，并且通过抽吸两个平面构件之间的区域而保持就位。 加热器层可以由具有以预定图案形成在导电层上的加热器元件的交替绝缘和导电层制成。

公开(公告)号：US07567885B2

公开(公告)日：2009-07-28

申请号：US11843978

申请日：2007-08-23

Applicant: Harald Herchen ,  Kim Vellore ,  Erica Renee Porras

Inventor： Harald Herchen ,  Kim Vellore ,  Erica Renee Porras

IPC: G06F19/00

CPC classification number: G01B5/061 ,  G01B7/082

Abstract: An apparatus and method for measuring a height of an object above a surface includes a housing with a first portion having an upper surface and a lower surface and an extension portion extending a first distance from the lower surface of the first portion. The extension portion defines a cavity opposing the lower surface of the first portion. The apparatus further includes one or more actuators passing through the lower surface of the first portion of the housing and extending into the cavity. Additionally, the apparatus includes a plate supported by one or more flexible members coupled to the extension portion. The plate has a top surface and a bottom surface that lies in a plane substantially parallel to the surface. Moreover, the apparatus includes a plurality of sensors disposed at predetermined positions of the plate. Each of the plurality of sensors is responsive to a height measured between each of the plurality of sensors and the surface.

Abstract translation: 用于测量表面上方的物体的高度的装置和方法包括具有第一部分的壳体，该第一部分具有上表面和下表面，以及从第一部分的下表面延伸第一距离的延伸部分。 延伸部分限定了与第一部分的下表面相对的空腔。 该装置还包括通过壳体的第一部分的下表面并延伸到空腔中的一个或多个致动器。 另外，该装置包括由耦合到延伸部分的一个或多个柔性构件支撑的板。 板具有位于基本上平行于表面的平面中的顶表面和底表面。 此外，该装置包括设置在板的预定位置的多个传感器。 多个传感器中的每一个响应于在多个传感器中的每一个和表面之间测量的高度。

公开(公告)号：US07521915B2

公开(公告)日：2009-04-21

申请号：US11412058

申请日：2006-04-25

Applicant: Harald Herchen ,  Christopher L. Beaudry

Inventor： Harald Herchen ,  Christopher L. Beaudry

IPC: G01R31/28

CPC classification number: H01L22/14

Abstract: An apparatus adapted to detect a particle present on a bevel of a wafer. The apparatus includes a substrate support and a sensor housing adapted to receive an edge of the wafer. The sensor housing includes one or more probe electrodes and one or more position sensors. The apparatus also includes a translatable stage coupled to the sensor housing. The translatable stage is adapted to control the distance between the bevel of the wafer and the one or more position sensors. The apparatus further includes electrical circuitry electrically coupled to the substrate support and the one or more probe electrodes and adapted to generate an electric field between the bevel of the wafer and the one or more probe electrodes, detection circuitry electrically coupled to the electrical circuitry, and a processor adapted to process electrical signals and thereby detect the particle present on the bevel of the wafer.

Abstract translation: 一种适用于检测存在于晶片斜面上的颗粒的装置。 该装置包括衬底支撑件和适于接收晶片边缘的传感器外壳。 传感器外壳包括一个或多个探针电极和一个或多个位置传感器。 该装置还包括耦合到传感器外壳的可平移台。 可平移台适于控制晶片的斜面与一个或多个位置传感器之间的距离。 所述装置还包括电耦合到所述衬底支撑件和所述一个或多个探针电极并且适于在所述晶片的所述斜面与所述一个或多个探针电极之间产生电场的电路，电耦合到所述电路的检测电路，以及 处理器，其适于处理电信号，从而检测存在于晶片的斜面上的颗粒。

公开(公告)号：US20080236787A1

公开(公告)日：2008-10-02

申请号：US11693550

申请日：2007-03-29

Applicant: Harald Herchen ,  Anzhong Chang ,  Natarajan Ramanan

Inventor： Harald Herchen ,  Anzhong Chang ,  Natarajan Ramanan

IPC: F28F7/00

CPC classification number: H01L21/67184 ,  H01L21/67109 ,  H01L21/67225

Abstract: A method of reducing a temperature of a bake plate within a semiconductor processing tool includes (a) providing a substrate and (b) transferring the substrate to a position adjacent the bake plate. The bake plate is characterized by an initial bake plate temperature greater than a set point temperature. The method also includes (c) reducing the temperature of the bake plate by a first predetermined amount and (d) transferring the substrate from the position adjacent the bake plate to a position adjacent a chill plate. The chill plate is characterized by a chill plate temperature less than the set point temperature. The method further includes (e) transferring the substrate from the position adjacent the chill plate to the position adjacent the bake plate, (f) reducing the temperature of the bake plate by a second predetermined amount, (g) monitoring the temperature of the bake plate, and (h) repeating steps (d) through (g) until the bake plate temperature is within a predetermined tolerance of the set point temperature.

Abstract translation: 降低半导体加工工具中烘烤板温度的方法包括（a）提供基材和（b）将基材转移到与烘烤板相邻的位置。 烘烤板的特征在于初始烘烤板温度大于设定温度。 该方法还包括（c）将烘烤板的温度降低第一预定量，以及（d）将基板从邻近烘烤板的位置转移到与冷却板相邻的位置。 冷却板的特征在于冷却板温度低于设定点温度。 该方法还包括（e）将基板从与冷板相邻的位置转移到与烘烤板相邻的位置，（f）将烘烤板的温度降低第二预定量，（g）监测烘烤温度 板和（h）重复步骤（d）至（g），直到烘烤板温度在设定温度的预定公差内。

公开(公告)号：US20080224817A1

公开(公告)日：2008-09-18

申请号：US11686781

申请日：2007-03-15

Applicant: Kim R. Vellore ,  Harald Herchen ,  Brian C. Lue

Inventor： Kim R. Vellore ,  Harald Herchen ,  Brian C. Lue

IPC: H01C7/02

CPC classification number: G01K1/14 ,  H01L21/67103 ,  H01L21/67248

Abstract: A device for heating a semiconductor wafer comprises a heating element arranged to conduct heat toward the wafer. The heating element can extend along a heating element path. An RTD sensor loop can extend along an RTD sensor path. The RTD sensor path can be positioned along the heating element path to measure a temperature that corresponds to the heating element. The RTD sensor loop can measure an average temperature along the heating element. Portions of the RTD sensor can be interlaced between portions of the heating element. The heating element path can be arranged with interstices between portions of the heating element path, and portions of the RTD sensor path can be positioned within the interstices to interlace the RTD sensor loop with the heating element. The RTD sensor loop can comprise a soft metal that is resistant to oxidation and extends along the RTD sensor path.

Abstract translation: 用于加热半导体晶片的装置包括布置成朝向晶片传导热量的加热元件。 加热元件可以沿着加热元件路径延伸。 RTD传感器回路可以沿着RTD传感器路径延伸。 RTD传感器路径可以沿着加热元件路径定位，以测量对应于加热元件的温度。 RTD传感器回路可以测量加热元件的平均温度。 RTD传感器的部分可以在加热元件的部分之间交错。 加热元件路径可以在加热元件路径的部分之间布置有间隙，并且RTD传感器路径的部分可以位于间隙内，以使RTD传感器回路与加热元件交错。 RTD传感器回路可以包括耐金属氧化并沿RTD传感器路径延伸的软金属。

公开(公告)号：US20080032491A1

公开(公告)日：2008-02-07

申请号：US11501201

申请日：2006-08-07

Applicant: Harald Herchen

Inventor： Harald Herchen

IPC: H01L21/322

CPC classification number: H01L21/2686 ,  H01L21/67028 ,  H01L21/67115

Abstract: An apparatus for removing one or more backside particles from a semiconductor substrate. The apparatus includes a substrate support member adapted to support the semiconductor substrate. The substrate has a substrate diameter, a substrate frontside, and a substrate backside. The apparatus also includes a curing ring having an annular shape and a curing ring support member adapted to position the curing ring at a predetermined distance from the backside of the semiconductor substrate, thereby defining a removal region. The apparatus further includes a phase change material dispense system adapted to provide a phase change material to the removal region and an ultraviolet source adapted to irradiate the phase change material.

Abstract translation: 一种用于从半导体衬底去除一个或多个背面颗粒的设备。 该装置包括适于支撑半导体衬底的衬底支撑构件。 衬底具有衬底直径，衬底前侧和衬底背面。 该设备还包括具有环形形状的固化环和固化环支撑构件，其适于将固化环定位在离半导体衬底的背面预定距离处，从而限定去除区域。 该装置还包括相变材料分配系统，其适于向去除区域提供相变材料，以及适于照射相变材料的紫外线源。

公开(公告)号：US20070247137A1

公开(公告)日：2007-10-25

申请号：US11412058

申请日：2006-04-25

Applicant: Harald Herchen ,  Christopher Beaudry

Inventor： Harald Herchen ,  Christopher Beaudry

IPC: G01N27/00

CPC classification number: H01L22/14

Abstract: An apparatus adapted to detect a particle present on a bevel of a wafer. The apparatus includes a substrate support and a sensor housing adapted to receive an edge of the wafer. The sensor housing includes one or more probe electrodes and one or more position sensors. The apparatus also includes a translatable stage coupled to the sensor housing. The translatable stage is adapted to control the distance between the bevel of the wafer and the one or more position sensors. The apparatus further includes electrical circuitry electrically coupled to the substrate support and the one or more probe electrodes and adapted to generate an electric field between the bevel of the wafer and the one or more probe electrodes, detection circuitry electrically coupled to the electrical circuitry, and a processor adapted to process electrical signals and thereby detect the particle present on the bevel of the wafer.

Abstract translation: 一种适用于检测存在于晶片斜面上的颗粒的装置。 该装置包括衬底支撑件和适于接收晶片边缘的传感器外壳。 传感器外壳包括一个或多个探针电极和一个或多个位置传感器。 该装置还包括耦合到传感器外壳的可平移台。 可平移台适于控制晶片的斜面与一个或多个位置传感器之间的距离。 所述装置还包括电耦合到所述衬底支撑件和所述一个或多个探针电极并且适于在所述晶片的所述斜面与所述一个或多个探针电极之间产生电场的电路，电耦合到所述电路的检测电路，以及 处理器，其适于处理电信号，从而检测存在于晶片的斜面上的颗粒。

公开(公告)号：US07138039B2

公开(公告)日：2006-11-21

申请号：US10348800

申请日：2003-01-21

Applicant: Vincent E. Burkhart ,  Harald Herchen ,  Joseph Yahalom

Inventor： Vincent E. Burkhart ,  Harald Herchen ,  Joseph Yahalom

IPC: B23H3/04 ,  C25D17/06

CPC classification number: C25D17/06 ,  C25D7/123 ,  C25D17/005

Abstract: Embodiments of the invention may further provide a contact ring for an electrochemical plating system. The contact generally includes a substrate receiving member having a substrate support surface formed thereon, a plurality of electrical contact pins extending from the substrate support surface, a first seal positioned on the substrate support surface radially inward of the plurality of electrical contacts, and a second seal positioned radially outward of the plurality of electrical contacts. Additionally, the contact ring generally includes a fluid inlet configured to supply a fluid to a volume between the first seal and the second seal.

Abstract translation: 本发明的实施例还可以提供用于电化学电镀系统的接触环。 触点通常包括其上形成有基板支撑表面的基板接收构件，从基板支撑表面延伸的多个电接触销，位于多个电触点的径向内侧的基板支撑表面上的第一密封件，以及第二密封件 定位在多个电触头的径向外侧的密封件。 另外，接触环通常包括被配置为将流体供应到第一密封件和第二密封件之间的体积的流体入口。

公开(公告)号：US07087144B2

公开(公告)日：2006-08-08

申请号：US10355479

申请日：2003-01-31

Applicant: Harald Herchen

Inventor： Harald Herchen

IPC: C25D17/06 ,  C25D17/08 ,  C25D7/12 ,  C25D3/38

CPC classification number: C25D17/001 ,  C25D7/123 ,  C25D17/06

Abstract: A contact assembly for supporting a substrate in an electrochemical plating system, wherein that contact assembly includes a contact ring and a thrust plate assembly. The contact ring includes an annular ring member having an upper surface and a lower surface, an annular bump member positioned on the upper surface, and a plurality of flexible and conductive substrate contact fingers extending radially inward from the lower surface. The thrust plate includes an annular plate member sized to be received within the annular ring member, and a seal member extending radially outward from the plate member, the seal member being configured to engage the annular bump member for form a fluid seal therewith.

Abstract translation: 一种用于在电化学电镀系统中支撑衬底的接触组件，其中所述接触组件包括接触环和推力板组件。 接触环包括具有上表面和下表面的环形环构件，位于上表面上的环形凸起构件以及从下表面径向向内延伸的多个柔性和导电的衬底接触指。 推力板包括尺寸设置成容纳在环形环构件内的环形板构件和从板构件径向向外延伸的密封构件，密封构件构造成与环形凸起构件接合以与其形成流体密封。