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公开(公告)号：US08344352B2
公开(公告)日：2013-01-01
申请号：US13185094
申请日：2011-07-18
IPC分类号： H01L29/06
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译： 不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。 在一个实施方案中，铜的前体沉积在氮化屏障上。 然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。
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2.发明申请公开(公告)号：US20080045013A1
公开(公告)日：2008-02-21
申请号：US11506358
申请日：2006-08-18
申请人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Joseph H. Han , Harsono S. Simka , Ting Zhong , Eric Dickey , Bill Barrow
发明人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Joseph H. Han , Harsono S. Simka , Ting Zhong , Eric Dickey , Bill Barrow
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/288 , H01L21/76849 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An iridium encased copper interconnect comprises an iridium liner formed within a trench in a dielectric layer, wherein the iridium liner is formed directly on the dielectric layer, a copper interconnect formed on the iridium liner, and an iridium capping layer formed on the copper interconnect. The iridium encased copper interconnect may be fabricated by providing a semiconductor substrate in a reactor, wherein the semiconductor substrate includes a trench etched into a dielectric layer, pulsing trimethylaluminum into the reactor proximate to the semiconductor substrate, pulsing an iridium precursor into the reactor proximate to the semiconductor substrate, wherein the trimethylaluminum enables an iridium species to deposit directly on the dielectric layer, depositing a copper seed layer on the iridium species layer using an electroless deposition process, and depositing a bulk copper layer on the copper seed layer using an electroplating process.
摘要翻译： 铱包裹的铜互连包括形成在电介质层的沟槽内的铱衬里，其中铱衬垫直接形成在电介质层上，形成在铱衬垫上的铜互连以及形成在铜互连上的铱覆盖层。 可以通过在反应器中提供半导体衬底来制造铱包络铜互连，其中半导体衬底包括蚀刻到电介质层中的沟槽，将靠近半导体衬底的三甲基铝脉冲发射到反应器中，将铱前驱物脉冲至接近于 所述半导体衬底，其中所述三甲基铝能够使铱物质直接沉积在所述电介质层上，使用无电沉积工艺在所述铱物质层上沉积铜籽晶层，并且使用电镀工艺在所述铜籽晶层上沉积大块铜层 。
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3.发明授权公开(公告)号：US08319287B2
公开(公告)日：2012-11-27
申请号：US12705248
申请日：2010-02-12
申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
发明人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
IPC分类号： H01L29/78
CPC分类号： H01L21/823842 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
摘要翻译： 这里描述的金属栅极电极堆叠包括与金属碳氮化物扩散阻挡层接触的低电阻金属帽，其中金属碳氮化物扩散阻挡层被调谐到特定的功函数，以用作pMOS晶体管的功函数金属。 在一个实施例中，工作功能调谐金属碳氮化物扩散屏障禁止栅电极堆叠的低电阻金属盖层迁移到MOS结。 在本发明的另一个实施方案中，金属碳氮化物阻挡膜的功函数通过改变膜中的氮浓度而被调制为具有预选功函的p型。
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公开(公告)号：US07982204B2
公开(公告)日：2011-07-19
申请号：US12788603
申请日：2010-05-27
IPC分类号： H01L29/06
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译： 不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。 在一个实施方案中，铜的前体沉积在氮化屏障上。 然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。
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5.发明申请公开(公告)号：US20100140717A1
公开(公告)日：2010-06-10
申请号：US12705248
申请日：2010-02-12
申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
发明人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
IPC分类号： H01L27/092
CPC分类号： H01L21/823842 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
摘要翻译： 这里描述的金属栅极电极堆叠包括与金属碳氮化物扩散阻挡层接触的低电阻金属帽，其中金属碳氮化物扩散阻挡层被调谐到特定的功函数，以用作pMOS晶体管的功函数金属。 在一个实施例中，工作功能调谐金属碳氮化物扩散屏障禁止栅电极堆叠的低电阻金属盖层迁移到MOS结。 在本发明的另一个实施方案中，金属碳氮化物阻挡膜的功函数通过改变膜中的氮浓度而被调制为具有预选功函的p型。
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6.发明申请公开(公告)号：US20080242880A1
公开(公告)日：2008-10-02
申请号：US12058751
申请日：2008-03-30
申请人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder , Juan E. Dominguez , Adrien R. Lavoie , Harsono S. Simka
发明人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder , Juan E. Dominguez , Adrien R. Lavoie , Harsono S. Simka
CPC分类号： C07F17/00 , C23C16/45553
摘要： Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD).
摘要翻译： 用于在基底上沉积铜或含铜膜的铜前体，例如微电子器件衬底或其它表面。 前体包括各种类型的铜化合物，包括硼氢化铜，具有环戊二烯基型配体的铜化合物，具有环戊二烯基型的铜化合物和异氰化物配体，以及稳定的氢化铜。 这些前体可以固体或液体形式使用，以便形成用于与基底接触的前体蒸气，通过诸如化学气相沉积（CVD），原子层沉积（ALD）或快速蒸镀（数字式）技术形成沉积的铜 CVD）。
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公开(公告)号：US20080102632A1
公开(公告)日：2008-05-01
申请号：US11591792
申请日：2006-11-01
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/18 , C23C16/45529 , C23C18/08 , C23C18/1216 , C23C18/1295 , C23C18/1605 , C23C18/165 , C23C18/1889 , C25D5/02 , C25D7/123 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76873
摘要： An iodine-doped ruthenium barrier layer for use with copper interconnects within integrated circuits is formed using novel, iodine-containing ruthenium precursors in an ALD or CVD process. Ruthenium precursors that may be used include ruthenium containing carbonyls, arenes, cyclopentadienyls, and certain other ruthenium containing compounds. The ruthenium precursors include iodine to catalyze a subsequent copper metal deposition and to smooth the surface of the ruthenium layer. The iodine concentration across the thickness of the ruthenium barrier layer may be constant or may be graded.
摘要翻译： 在ALD或CVD工艺中使用新颖的含碘钌前体形成在集成电路内与铜互连一起使用的掺碘钌阻挡层。 可以使用的钌前体包括含钌的羰基，芳烃，环戊二烯基和某些其它含钌化合物。 钌前体包括碘以催化随后的铜金属沉积并平滑钌层的表面。 钌阻挡层的厚度上的碘浓度可以是恒定的或可以分级的。
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公开(公告)号：US20110272811A1
公开(公告)日：2011-11-10
申请号：US13185094
申请日：2011-07-18
IPC分类号： H01L23/532
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译： 不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。 在一个实施方案中，铜的前体沉积在氮化屏障上。 然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。
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9.发明授权公开(公告)号：US07964746B2
公开(公告)日：2011-06-21
申请号：US12058751
申请日：2008-03-30
申请人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder , Juan E. Dominguez , Adrien R. Lavoie , Harsono S. Simka
发明人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder , Juan E. Dominguez , Adrien R. Lavoie , Harsono S. Simka
CPC分类号： C07F17/00 , C23C16/45553
摘要： Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD).
摘要翻译： 用于在基底上沉积铜或含铜膜的铜前体，例如微电子器件衬底或其它表面。 前体包括各种类型的铜化合物，包括硼氢化铜，具有环戊二烯基型配体的铜化合物，具有环戊二烯基型的铜化合物和异氰化物配体，以及稳定的氢化铜。 这些前体可以固体或液体形式使用，以便形成用于与基底接触的前体蒸气，通过诸如化学气相沉积（CVD），原子层沉积（ALD）或快速蒸镀（数字式）技术形成沉积的铜 CVD）。
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公开(公告)号：US20100166981A1
公开(公告)日：2010-07-01
申请号：US12347940
申请日：2008-12-31
IPC分类号： C23C16/513 , C23C16/44
CPC分类号： C23C16/45536 , C23C16/18 , C23C16/44 , C23C16/45525 , C23C16/4581 , C23C16/487
摘要： A method including applying an electric charge to a substrate in a chamber; introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including applying a removable electric charge to a substrate; in the presence of the applied electric charge, introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent with an externally applied electric charge.
摘要翻译： 一种方法，包括向腔室中的基板施加电荷; 将有机金属取代基引入室中，有机金属取代基包括金属配体和有机配体; 以及通过还原有机金属取代基的金属配体沉积金属膜。 一种方法，包括将可移除的电荷施加到基底上; 在所施加的电荷的存在下，将有机金属取代基引入室中，所述有机金属取代基包括金属配体和有机配体; 以及通过还原有机金属取代基的金属配体沉积金属膜。 一种包括将有机金属取代基引入到室中的方法，包括金属配体和有机配体的有机金属取代基; 以及通过用外部施加的电荷还原有机金属取代基的金属配体来沉积金属膜。
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