公开(公告)号：US08564194B2

公开(公告)日：2013-10-22

申请号：US11640398

申请日：2006-12-18

申请人： Hee-Dong Choi ,  Jae-Hee Park

发明人： Hee-Dong Choi ,  Jae-Hee Park

IPC分类号： H01J9/24 ,  H01J1/62 ,  H01J63/04

CPC分类号： H01L27/3276 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248

摘要： An organic light emitting diode device includes a gate electrode of a first transistor on a substrate; a gate insulation film on the gate electrode of the first transistor; a source electrode of a second transistor on the gate insulation film and overlapping with the gate electrode of the first transistor; a contact hole exposing the gate electrode of the first transistor and the source electrode of the second transistor; a conductive wiring in the contact hole, for electrically connecting the gate electrode of the first transistor and the source electrode of the second transistor.

摘要翻译： 一种有机发光二极管器件包括：衬底上的第一晶体管的栅电极; 第一晶体管的栅电极上的栅极绝缘膜; 栅极绝缘膜上的第二晶体管的源电极，并与第一晶体管的栅电极重叠; 暴露第一晶体管的栅电极和第二晶体管的源电极的接触孔; 接触孔中的导电布线，用于将第一晶体管的栅电极和第二晶体管的源电极电连接。

公开(公告)号：US20110315994A1

公开(公告)日：2011-12-29

申请号：US13229272

申请日：2011-09-09

申请人： Hee-Dong CHOI ,  Seong-Moh SEO

发明人： Hee-Dong CHOI ,  Seong-Moh SEO

IPC分类号： H01L29/786 ,  H01L33/08

CPC分类号： H01L27/124 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/66765

摘要： A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line.

摘要翻译： 一种制造显示装置的方法包括：在基板上形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成有源层，由外部多晶硅制成的栅电极，由内在的 多晶硅; 在所述有源层上形成蚀刻停止层; 在蚀刻停止器上形成彼此间隔开的源极和漏极; 在所述有源层的一侧和所述源极之间以及所述有源层和所述漏电极的相对侧之间形成欧姆接触层; 形成连接到栅电极的栅极线; 并形成跨越栅极线的数据线。

公开(公告)号：US08030106B2

公开(公告)日：2011-10-04

申请号：US12497101

申请日：2009-07-02

申请人： Hee-Dong Choi ,  Seong-Moh Seo

发明人： Hee-Dong Choi ,  Seong-Moh Seo

IPC分类号： H01L21/84

CPC分类号： H01L27/124 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/66765

摘要： A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line.

摘要翻译： 一种制造显示装置的方法包括：在基板上形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成有源层，由外部多晶硅制成的栅电极，由内在的 多晶硅; 在所述有源层上形成蚀刻停止层; 在蚀刻停止器上形成彼此间隔开的源极和漏极; 在所述有源层的一侧和所述源极之间以及所述有源层和所述漏电极的相对侧之间形成欧姆接触层; 形成连接到栅电极的栅极线; 并形成跨越栅极线的数据线。

公开(公告)号：US20110079787A1

公开(公告)日：2011-04-07

申请号：US12840941

申请日：2010-07-21

申请人： Hee-Dong CHOI

发明人： Hee-Dong CHOI

IPC分类号： H01L33/16

CPC分类号： H01L27/1222 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1274 ,  H01L29/4908 ,  H01L29/78648

摘要： An array substrate for a display device includes: a substrate; first and second gate electrodes of impurity-doped polycrystalline silicon on the substrate; a gate insulating layer on the first and second gate electrodes; first and second active layers of intrinsic polycrystalline silicon on the gate insulating layer, the first and second active layers corresponding to the first and second active layers, respectively; an interlayer insulating layer on the first and second active layers and including first to fourth active contact holes, the first and second active contact holes exposing side portions of the first active layer, the third and fourth active contact holes exposing side portions of the second active layer; first and second ohmic contact layers of impurity-doped amorphous silicon on the interlayer insulating layer, the first ohmic contact layer contacting the first active layer through the first and second active contact holes, the second ohmic contact layer contacting the second active layer through the third and fourth active contact hole; first source and drain electrodes on the first ohmic contact layer and second source and drain electrodes on the second ohmic contact layer; a data line on the interlayer insulating layer, the data line connected to the first source electrode; a first passivation layer on the first source and drain electrodes, the second source and drain electrodes and the data line; a gate line on the first passivation layer, the gate line connected to the first gate electrode and crossing the data line to define a pixel region; a second passivation layer on the gate line; and a pixel electrode on the second passivation layer, the pixel electrode connected to the second drain electrode.

摘要翻译： 用于显示装置的阵列基板包括：基板; 在衬底上的杂质掺杂多晶硅的第一和第二栅电极; 在第一和第二栅电极上的栅极绝缘层; 栅极绝缘层上的本征多晶硅的第一和第二有源层，分别对应于第一和第二有源层的第一和第二有源层; 在所述第一和第二有源层上的层间绝缘层，并且包括第一至第四有源接触孔，所述第一和第二有源接触孔暴露所述第一有源层的侧部，所述第三和第四有源接触孔暴露所述第二有源接触孔的侧部分 层; 所述第一和第二欧姆接触层在所述层间绝缘层上的杂质掺杂非晶硅，所述第一欧姆接触层通过所述第一和第二有源接触孔接触所述第一有源层，所述第二欧姆接触层通过所述第三有源层接触所述第二有源层， 和第四活动接触孔; 第一欧姆接触层上的第一源极和漏极电极以及第二欧姆接触层上的第二源极和漏极电极; 在所述层间绝缘层上的数据线，所述数据线与所述第一源极连接; 第一源极和漏极上的第一钝化层，第二源极和漏极以及数据线; 在第一钝化层上的栅极线，栅极线连接到第一栅电极并与数据线交叉以限定像素区域; 栅极线上的第二钝化层; 以及在所述第二钝化层上的像素电极，所述像素电极连接到所述第二漏电极。

公开(公告)号：US20110079783A1

公开(公告)日：2011-04-07

申请号：US12890112

申请日：2010-09-24

申请人： Hee-Dong CHOI

发明人： Hee-Dong CHOI

IPC分类号： H01L51/50

CPC分类号： H01L27/124 ,  H01L27/3211 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/78618 ,  H01L51/5265 ,  H01L2251/558

摘要： An array substrate for an organic electroluminescent device includes a substrate; first and second gate electrodes; first and second gate insulating layers; first and second active layers; an interlayer insulating layer; first to fourth ohmic contact layers; first and second source electrodes; first and second drain electrodes; a data line connected to the first source electrode; a first power line connected to the second source electrode; a first passivation layer on the first and second source electrodes; a gate line contacting the first gate electrode; a second passivation layer on the gate line; a pixel electrode on the second passivation layer and contacting the second drain electrode; an organic luminescent layer on the pixel electrode; and a reference electrode on the organic luminescent layer, wherein portions of the pixel electrodes respectively contacting the organic luminescent layers in one pixel region and in another one pixel region have different heights from the substrate.

摘要翻译： 用于有机电致发光器件的阵列衬底包括衬底; 第一和第二栅电极; 第一和第二栅极绝缘层; 第一和第二活性层; 层间绝缘层; 第一至第四欧姆接触层; 第一和第二源电极; 第一和第二漏电极; 连接到第一源电极的数据线; 连接到所述第二源电极的第一电源线; 在第一和第二源电极上的第一钝化层; 与第一栅电极接触的栅极线; 栅极线上的第二钝化层; 所述第二钝化层上的像素电极和所述第二漏电极接触; 像素电极上的有机发光层; 以及有机发光层上的参考电极，其中分别与一个像素区域和另一个像素区域中的有机发光层接触的像素电极的部分与衬底具有不同的高度。

公开(公告)号：US20070152574A1

公开(公告)日：2007-07-05

申请号：US11640398

申请日：2006-12-18

申请人： Hee-Dong Choi ,  Jae-Hee Park

发明人： Hee-Dong Choi ,  Jae-Hee Park

IPC分类号： H01J1/62

CPC分类号： H01L27/3276 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248

摘要： An organic light emitting diode device includes a gate electrode of a first transistor on a substrate; a gate insulation film on the gate electrode of the first transistor; a source electrode of a second transistor on the gate insulation film and overlapping with the gate electrode of the first transistor; a contact hole exposing the gate electrode of the first transistor and the source electrode of the second transistor; a conductive wiring in the contact hole, for electrically connecting the gate electrode of the first transistor and the source electrode of the second transistor.

摘要翻译： 一种有机发光二极管器件包括：衬底上的第一晶体管的栅电极; 第一晶体管的栅电极上的栅极绝缘膜; 栅极绝缘膜上的第二晶体管的源电极，并与第一晶体管的栅电极重叠; 暴露第一晶体管的栅电极和第二晶体管的源电极的接触孔; 接触孔中的导电布线，用于将第一晶体管的栅电极和第二晶体管的源电极电连接。

公开(公告)号：US08785257B2

公开(公告)日：2014-07-22

申请号：US12829705

申请日：2010-07-02

申请人： Hee-Dong Choi ,  Hye-Young Choi ,  Doo-Seok Yang

发明人： Hee-Dong Choi ,  Hye-Young Choi ,  Doo-Seok Yang

IPC分类号： H01L21/00 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1214 ,  H01L27/12 ,  H01L27/124 ,  H01L29/78648

摘要： Disclosed is array substrate including a pixel region having a switching region, a driving region and a storage region. A switching TFT in the switching region includes a first gate electrode, a first gate insulating layer, a switching active layer on the first gate insulating layer, a switching source electrode on a first switching ohmic contact layer, and a switching drain electrode on a second switching ohmic contact layer; a driving TFT in the driving region is connected to the switching TFT and includes a first gate electrode, a second gate insulating layer, a driving active layer on the second gate insulating layer, a driving source electrode on a first driving ohmic contact layer, and a driving drain electrode on a second driving ohmic contact layer; wherein at least one of the switching and driving TFTs further includes a second gate electrode over the switching or driving active layers.

摘要翻译： 公开了包括具有开关区域，驱动区域和存储区域的像素区域的阵列基板。 开关区域中的开关TFT包括第一栅极电极，第一栅极绝缘层，第一栅极绝缘层上的开关有源层，第一开关欧姆接触层上的开关源电极和第二栅极绝缘层上的开关漏极电极 开关欧姆接触层; 驱动区域中的驱动TFT连接到开关TFT，并且包括第一栅极电极，第二栅极绝缘层，第二栅极绝缘层上的驱动有源层，第一驱动欧姆接触层上的驱动源极，以及 在第二驱动欧姆接触层上的驱动漏电极; 其中所述开关和驱动TFT中的至少一个还包括位于所述开关或驱动有源层上的第二栅电极。

公开(公告)号：US20130071963A1

公开(公告)日：2013-03-21

申请号：US13612278

申请日：2012-09-12

申请人： Hee Dong CHOI

发明人： Hee Dong CHOI

IPC分类号： H01L21/336 ,  H01L51/56

CPC分类号： H01L27/1288 ,  H01L27/1255 ,  H01L29/4908 ,  H01L29/78627

摘要： A thin film transistor fabrication method allows forming a first photoresist pattern on a triple layer of insulation, conductive and metal films opposite to a semiconductor pattern. A first metal pattern and a conductive pattern are formed through an etch process before forming source and drain regions through a first ion injection process. A second photoresist pattern with a narrower width than that of the first photoresist pattern is derived from the first photoresist pattern. The first metal pattern is reformed into a second metal pattern with a narrower width than that of the second photoresist pattern. A process is performed that includes removing the second photoresist pattern, forming LDD (Lightly Doped Drain) regions in the semiconductor pattern, and forming GOLDD (Gate Overlap LDD) regions in the semiconductor pattern. A second insulation film is formed before forming source and drain electrodes on the second insulation film.

摘要翻译： 薄膜晶体管制造方法允许在与半导体图案相对的绝缘，导电和金属膜的三层上形成第一光致抗蚀剂图案。 在通过第一离子注入工艺形成源区和漏区之前，通过蚀刻工艺形成第一金属图案和导电图案。 具有比第一光致抗蚀剂图案的宽度窄的第二光致抗蚀剂图案从第一光致抗蚀剂图案得到。 将第一金属图案重新形成具有比第二光致抗蚀剂图案窄的宽度的第二金属图案。 执行包括去除第二光致抗蚀剂图案，在半导体图案中形成LDD（轻掺杂漏极）区域以及在半导体图案中形成GOLDD（栅极重叠LDD）区域的处理。 在第二绝缘膜上形成源极和漏极之前形成第二绝缘膜。

公开(公告)号：US20120104405A1

公开(公告)日：2012-05-03

申请号：US13285584

申请日：2011-10-31

申请人： Hee-Dong CHOI ,  Ki-Sul Cho ,  Seong-Moh Seo

发明人： Hee-Dong CHOI ,  Ki-Sul Cho ,  Seong-Moh Seo

IPC分类号： H01L33/08 ,  H01L33/16

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3265 ,  H01L2227/323

摘要： A method of fabricating an array substrate for an organic electroluminescent device includes forming a semiconductor layer of polysilicon in an element region, and a semiconductor pattern of polysilicon in a storage region on a substrate; forming a multiple-layered gate electrode corresponding to a center portion of the semiconductor layer and a first storage electrode corresponding to the semiconductor pattern; performing an impurity-doping to make a portion of the semiconductor layer not covered by the gate electrode into an ohmic contact layer and make the semiconductor pattern into a second storage electrode; forming source and drain electrodes and a third storage electrode corresponding to the first storage electrode; forming a first electrode contacting the drain electrode and a fourth storage electrode corresponding to the third storage electrode.

摘要翻译： 一种制造有机电致发光器件用阵列基板的方法包括：在元件区域中形成多晶硅的半导体层，以及在基板上的存储区域中形成多晶硅的半导体图案; 形成对应于所述半导体层的中心部分的多层栅电极和对应于所述半导体图案的第一存储电极; 进行杂质掺杂，使未被栅电极覆盖的半导体层的一部分成为欧姆接触层，并使半导体图案成为第二存储电极; 形成源极和漏极;以及对应于第一存储电极的第三存储电极; 形成与所述漏电极接触的第一电极和对应于所述第三存储电极的第四存储电极。

公开(公告)号：US08084936B2

公开(公告)日：2011-12-27

申请号：US11770529

申请日：2007-06-28

申请人： Jeong Hyun Kim ,  Jae Yoon Lee ,  Heung Lyul Cho ,  Joon Suk Lee ,  Hee Dong Choi

发明人： Jeong Hyun Kim ,  Jae Yoon Lee ,  Heung Lyul Cho ,  Joon Suk Lee ,  Hee Dong Choi

IPC分类号： H01J1/62 ,  G09G3/10

CPC分类号： H01L27/3283 ,  H01L27/3246

摘要： An organic light emitting device including a first electrode disposed on a substrate, a separator disposed on the first electrode in a lattice shape and having a groove-shaped isolation portion that gradually expands from an entrance toward an inside of the isolation portion, organic light emitting patterns disposed on the first electrode surrounded by the separator, the organic light emitting patterns being separated by the isolation portion, and second electrodes disposed on the organic light emitting patterns and separated by the isolation portion.

摘要翻译： 一种有机发光器件，包括设置在基板上的第一电极，以栅格形式设置在第一电极上并具有从隔离部分的入口朝向内部逐渐扩展的槽形隔离部分的隔离层，有机发光 布置在由分离器包围的第一电极上的图案，有机发光图案被隔离部分隔开，第二电极设置在有机发光图案上并被隔离部分分隔开。