公开(公告)号：US09269878B2

公开(公告)日：2016-02-23

申请号：US13293858

申请日：2011-11-10

申请人： Deok Ki Hwang ,  Young Ju Han ,  Hee Seok Choi ,  Ju Won Lee ,  Pil Geun Kang ,  Seok Beom Choi

发明人： Deok Ki Hwang ,  Young Ju Han ,  Hee Seok Choi ,  Ju Won Lee ,  Pil Geun Kang ,  Seok Beom Choi

IPC分类号： H01L33/36 ,  H01L33/62 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/50

CPC分类号： H01L33/62 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/505 ,  H01L33/507 ,  H01L33/641 ,  H01L2224/16

摘要： A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode under the first semiconductor layer, a reflective electrode layer under the second conductive semiconductor layer, a second electrode under the reflective electrode layer, and a support member under the first semiconductor layer and the reflective electrode layer around the first and second electrodes. A first connection electrode may be provided under the first electrode. At least a part of the first connection electrode is provided in the support member. A second connection electrode may be provided under the second electrode At least a part of the second connection electrode may be provided in the support member.

摘要翻译： 可以提供一种发光器件，其包括衬底，发光结构，第一半导体层下的第一电极，第二导电半导体层下的反射电极层，反射电极层下的第二电极和支撑构件 在第一半导体层和第一和第二电极周围的反射电极层之下。 可以在第一电极下方设置第一连接电极。 第一连接电极的至少一部分设置在支撑构件中。 第二连接电极可以设置在第二电极下方第二连接电极的至少一部分可以设置在支撑构件中。

公开(公告)号：US08373193B2

公开(公告)日：2013-02-12

申请号：US12997431

申请日：2009-06-15

申请人： Geun Ho Kim ,  Sung Kyoon Kim ,  Hee Seok Choi

发明人： Geun Ho Kim ,  Sung Kyoon Kim ,  Hee Seok Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed is a semiconductor light emitting device. The light emitting device includes a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; and a first electrode pad including a plurality of reflective layers on the first conductive type semiconductor layer.

摘要翻译： 公开了一种半导体发光器件。 发光器件包括第一导电类型半导体层; 在第一导电类型半导体层上的有源层; 以及在所述第一导电型半导体层上包括多个反射层的第一电极焊盘。

公开(公告)号：US08101956B2

公开(公告)日：2012-01-24

申请号：US13115028

申请日：2011-05-24

申请人： Sung Min Kong ,  Choong Youl Kim ,  Hee Seok Choi

发明人： Sung Min Kong ,  Choong Youl Kim ,  Hee Seok Choi

IPC分类号： H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/60 ,  H01L33/30 ,  H01L33/32 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： Discussed is a semiconductor LED package. The semiconductor LED package includes a packet body having a cavity, a semiconductor light emitting device in the cavity of the package body; and a plurality of reflective frames, each of the reflective frames having a bottom frame in the cavity of the package body, and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame, wherein the plurality of reflective frames are electrically separated from each other.

摘要翻译： 讨论的是一个半导体LED封装。 半导体LED封装包括具有空腔的封装体，在封装主体的空腔中的半导体发光器件; 以及多个反射框架，所述反射框架中的每一个在所述封装主体的空腔中具有底框架，以及至少两个从所述底框架延伸并相对于所述底框架倾斜的侧壁框架，其中所述多个反射框架 彼此电分离。

公开(公告)号：US20110220952A1

公开(公告)日：2011-09-15

申请号：US13115028

申请日：2011-05-24

申请人： Sung Min KONG ,  Choong Youl Kim ,  Hee Seok Choi

发明人： Sung Min KONG ,  Choong Youl Kim ,  Hee Seok Choi

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L33/30 ,  H01L33/32 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： Discussed is a semiconductor LED package. The semiconductor LED package includes a packet body having a cavity, a semiconductor light emitting device in the cavity of the package body; and a plurality of reflective frames, each of the reflective frames having a bottom frame in the cavity of the package body, and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame, wherein the plurality of reflective frames are electrically separated from each other.

摘要翻译： 讨论的是一个半导体LED封装。 半导体LED封装包括具有空腔的封装体，在封装主体的空腔中的半导体发光器件; 以及多个反射框架，所述反射框架中的每一个在所述封装主体的空腔中具有底框架，以及至少两个从所述底框架延伸并相对于所述底框架倾斜的侧壁框架，其中所述多个反射框架 彼此电分离。

公开(公告)号：US07858993B2

公开(公告)日：2010-12-28

申请号：US12530637

申请日：2008-04-17

申请人： Sung Min Kong ,  Choong Youl Kim ,  Hee Seok Choi

发明人： Sung Min Kong ,  Choong Youl Kim ,  Hee Seok Choi

IPC分类号： H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/60 ,  H01L33/30 ,  H01L33/32 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： Disclosed is an LED package. The LED package comprises a body comprising a cavity at one side thereof, at least one of lead frames comprising a bottom frame and a sidewall frame in the cavity, and a light emitting device electrically connected with the lead frames.

摘要翻译： 公开了一种LED封装。 所述LED封装包括在其一侧包括空腔的主体，所述空腔中包括底部框架和侧壁框架的引线框架中的至少一个以及与所述引线框架电连接的发光器件。

公开(公告)号：US07442569B2

公开(公告)日：2008-10-28

申请号：US11878503

申请日：2007-07-25

申请人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

发明人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC分类号： H01L21/00 ,  H01L29/22

CPC分类号： H01L33/14 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32

摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED包括n电极。 在n电极下形成AlGaN层。 在AlGaN层下形成未掺杂的GaN层，以向AlGaN层的结界面提供二维电子气层。 GaN基LED结构包括依次形成在未掺杂的GaN层下面的n型GaN层，有源层和p型GaN层。 在GaN基LED结构下方形成p电极。 导电性基板形成在p电极的下方。

公开(公告)号：US07259399B2

公开(公告)日：2007-08-21

申请号：US11490231

申请日：2006-07-21

申请人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

发明人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC分类号： H01L29/22 ,  H01L29/24

CPC分类号： H01L33/14 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32

摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

公开(公告)号：US08686450B2

公开(公告)日：2014-04-01

申请号：US11892445

申请日：2007-08-23

申请人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

发明人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L2933/0083

摘要： The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

摘要翻译： 本发明涉及一种垂直构造的GaN基发光二极管的制造方法。 制造垂直结构的GaN基发光二极管的方法包括在衬底上形成GaN层; 将化合物层图案化成预定的形状; 通过外延横向过度生长工艺在图案化的化合物层上形成n型GaN层，并在n型GaN层上依次形成有源层和p型GaN层; 在p型GaN层上形成结构支撑层; 在形成结构支撑层之后，依次去除衬底和形成在衬底上的GaN层; 去除在去除GaN层之后暴露的图案化合物层，以形成图案化为凹形的n型GaN层; 在形成凹形的n型GaN层上形成n型电极。

公开(公告)号：US08421105B2

公开(公告)日：2013-04-16

申请号：US12793770

申请日：2010-06-04

申请人： Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Tchang Hun Oh ,  Hee Seok Choi ,  Kwang Ki Choi

发明人： Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Tchang Hun Oh ,  Hee Seok Choi ,  Kwang Ki Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

公开(公告)号：US08120042B2

公开(公告)日：2012-02-21

申请号：US12506771

申请日：2009-07-21

申请人： Sang Youl Lee ,  Sung Kyoon Kim ,  Hee Seok Choi

发明人： Sang Youl Lee ,  Sung Kyoon Kim ,  Hee Seok Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/0095 ,  H01L33/22 ,  H01L33/32 ,  H01L2933/0091

摘要： A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a substrate and a light emitting structure. The substrate comprises a plurality of discontinuous fusion spots on at least one side surface thereof. The light emitting structure comprises a plurality of compound semiconductor layers on the substrate.

摘要翻译： 提供半导体发光器件。 半导体发光器件包括衬底和发光结构。 基板在其至少一个侧表面上包括多个不连续的熔接点。 发光结构在基板上包括多个化合物半导体层。