公开(公告)号：US20120305056A1

公开(公告)日：2012-12-06

申请号：US13485498

申请日：2012-05-31

申请人： Henning NAGEL ,  Ralf Gueldner

发明人： Henning NAGEL ,  Ralf Gueldner

IPC分类号： H01L31/048

CPC分类号： B32B17/10018 ,  B32B17/10743 ,  B32B17/10788 ,  B32B2327/12 ,  H01L31/0481 ,  Y02E10/50

摘要： The invention relates to a solar cell module comprising electrically interconnected solar cells with front and backs, a transparent first layer running along the front sides, which is covered on the front laterally by a transparent cover, as well as a second layer running along the backsides, which is covered at the back by a second cover. In order to prevent and/or minimize a potential-induced reduction to a large extent and/or obtain an improved stability vis-à-vis thermo-cycling, it is suggested that first layer consists of a first polymer material and the second layer consists of a second polymer material deviating from the first polymer material and the fact that specific resistance is larger p1 of the first material is greater than specific resistance p2 of the second material.

摘要翻译： 本发明涉及一种太阳能电池模块，其包括具有正面和背面的电互连的太阳能电池，沿着前侧延伸的透明第一层，其在前侧被透明盖覆盖，以及沿着背面延伸的第二层 ，后面被第二个盖子覆盖。 为了在很大程度上防止和/或最小化潜在的还原和/或获得相对于热循环的改进的稳定性，建议第一层由第一聚合物材料组成，第二层由 的偏离第一聚合物材料的第二聚合物材料和第一材料的电阻率较大p1的事实大于第二材料的电阻率p2。

公开(公告)号：US07651874B2

公开(公告)日：2010-01-26

申请号：US11465859

申请日：2006-08-21

申请人： Henning Nagel

发明人： Henning Nagel

IPC分类号： H01L21/66

CPC分类号： H01L31/186 ,  G01N21/6489 ,  G01N21/66 ,  G01N21/9505 ,  H02S50/10 ,  Y02E10/50 ,  Y02P70/521

摘要： The invention relates to a method and to an arrangement for localizing production errors in a semiconductor component part by generating excess charge carriers in the semiconductor component part and by determining the electric potential in said part. In order to be able to localize production errors with simple measures and without damaging the semiconductor component part, it is suggested that the semiconductor component part be stimulated to become luminescent and that the locally resolved luminescence intensity distribution be determined in order to determine the locally resolved distribution of the electric potential in the semiconductor component part.

摘要翻译： 本发明涉及通过在半导体部件中产生过量电荷载流子并确定所述部件中的电位来定位半导体部件中的生产误差的方法和装置。 为了能够通过简单的测量来定位生产误差并且不损坏半导体部件，建议半导体组件部分被激发成为发光，并且确定局部解析的发光强度分布以便确定局部解决的 在半导体部件中分布电位。

公开(公告)号：US09506975B2

公开(公告)日：2016-11-29

申请号：US14123842

申请日：2012-06-05

申请人： Henning Nagel

发明人： Henning Nagel

IPC分类号： G01R31/26 ,  G01R31/12 ,  H01L21/66 ,  H02S50/10

CPC分类号： G01R31/129 ,  H01L22/14 ,  H02S50/10

摘要： The invention relates to a method for measuring the high-voltage induced degradation (PID) of at least one solar cell. According to the invention, a conductive plastic material is pressed on the upper side or bottom side of the respective solar cell, in particular on the front side thereof, and a DC voltage greater than 50 V is applied between the plastic material and the respective solar cell. Alternatively, corona discharges may be applied to solar cells or photovoltaic modules. In one embodiment, a characteristic electric parameter of the respective solar cell or of the photovoltaic module is repeatedly measured at time intervals. The method according to the invention can be carried out on individual solar cells, which can be further processed directly after passing the test and without further complex processing, e.g. to a photovoltaic module. In principle, the method is also suitable for measurements on complete photovoltaic modules.

摘要翻译： 本发明涉及一种用于测量至少一个太阳能电池的高压诱导退化（PID）的方法。 根据本发明，导电塑料材料被压在各个太阳能电池的上侧或下侧，特别是在其前侧，并且在塑料材料和相应的太阳能之间施加大于50V的直流电压 细胞。 或者，可以将电晕放电施加到太阳能电池或光伏模块。 在一个实施例中，以时间间隔重复测量各个太阳能电池或光电模块的特征电参数。 根据本发明的方法可以在单独的太阳能电池上进行，其可以在通过测试之后直接进一步处理，而不需要进一步的复杂处理，例如， 到光伏模块。 原则上，该方法也适用于完整光伏组件的测量。

公开(公告)号：US09496424B2

公开(公告)日：2016-11-15

申请号：US13496954

申请日：2010-09-17

申请人： Henning Nagel

发明人： Henning Nagel

IPC分类号： H01L31/0747 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/048 ,  H01L31/068

CPC分类号： H01L31/02021 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/048 ,  H01L31/068 ,  Y02E10/547

摘要： A crystalline solar cell is provided that includes a front-sided n-doped area and a rear-sided p-doped area, a front-sided contact, a rear-sided contact and at least one front-sided first layer made from SiN. In order to reduce degradation of the parallel resistance, a second layer made of at least one material selected from the group SiN, SiOx, Al2Ox, SiOxNy: Hz, a-Si:H, TiOx or containing said type of material is disposed between the first layer and the n-doped area and is then doped for forming imperfections.

摘要翻译： 提供了一种晶体太阳能电池，其包括前面的n掺杂区域和背面p掺杂区域，前侧触点，后侧触点和由SiN制成的至少一个前侧第一层。 为了降低并联电阻的劣化，由选自SiN，SiOx，Al2Ox，SiOxNy：Hz，a-Si：H，TiOx或含有所述类型的材料的至少一种材料制成的第二层设置在 第一层和n掺杂区域，然后被掺杂以形成缺陷。

公开(公告)号：US20140000698A1

公开(公告)日：2014-01-02

申请号：US13994841

申请日：2011-12-15

申请人： Henning Nagel ,  Wilfried Schmidt

发明人： Henning Nagel ,  Wilfried Schmidt

IPC分类号： H01L31/02

CPC分类号： H01L31/02021 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing contacts made of electrically conductive material on solar cells is provided. The method includes applying a dopant source to at least one face of a substrate; forming phosphosilicate glass by diffusing dopant into the substrate in a first thermal step; locally applying laser radiation to the substrate in regions in which the electrically conductive material is to be applied in order to form the electrically conductive contact; measuring the layer resistivity developed in the surface region of the substrate on the dopant source side; applying the electrically conductive material to the lasered areas; measuring the specific contact resistance between the lasered area and the electrically conductive material; determining a pulse energy density range of the laser beam from the measured values; applying laser radiation having a pulse energy density within the determined pulse energy density range.

摘要翻译： 提供了一种在太阳能电池上制造由导电材料制成的触点的方法。 该方法包括将掺杂剂源施加到衬底的至少一个面; 通过在第一热步骤中将掺杂剂扩散到所述衬底中来形成磷硅玻璃; 在其中要施加导电材料的区域中局部地将激光辐射施加到衬底以形成导电接触; 测量在掺杂剂源侧的衬底的表面区域中产生的层电阻率; 将导电材料施加到激光区域; 测量激光区域和导电材料之间的特定接触电阻; 根据测量值确定激光束的脉冲能量密度范围; 在确定的脉冲能量密度范围内施加具有脉冲能量密度的激光辐射。

公开(公告)号：US20100297801A1

公开(公告)日：2010-11-25

申请号：US12781032

申请日：2010-05-17

申请人： Henning NAGEL ,  Wilfried SCHMIDT ,  Ingo SCHWIRTLICH ,  Dieter FRANKE

发明人： Henning NAGEL ,  Wilfried SCHMIDT ,  Ingo SCHWIRTLICH ,  Dieter FRANKE

IPC分类号： H01L31/18 ,  H01L21/70

CPC分类号： H01L24/02 ,  H01L31/022425 ,  H01L31/048 ,  H01L31/18 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12036 ,  Y02E10/50 ,  H01L2924/00

摘要： Process for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component like a solar cell, includes the steps of applying a moist material forming the contacts in a desired striplike and/or point-like arrangement on at least one exterior surface of the semiconductor component; drying the moist material by heating the semiconductor component to a temperature T1 and keeping the semiconductor element at temperature T1 over a time t1; sintering the dried material by heating the semiconductor component to a temperature T2 and keeping the semiconductor component at temperature T2 over a time t2; cooling the semiconductor component to a temperature T3 that is equal or roughly equal to room temperature, and keeping the semiconductor component at temperature T3 over a time T3; cooling the semiconductor component to a temperature T4 with T4≦−35° C. and keeping the semiconductor component at temperature T4 over a time T4; and heating the semiconductor component to room temperature.

摘要翻译： 在诸如太阳能电池的半导体部件上生产带状和/或点状导电触头的工艺包括以下步骤：将形成所需触点的潮湿材料以期望的带状和/或点状布置施加到至少一个 半导体部件的外表面; 通过将半导体组件加热至温度T1并将半导体元件保持在温度T1超过时间t1来干燥潮湿材料; 通过将半导体组件加热到温度T2并将半导体组件保持在温度T2超过时间t2来烧结干燥的材料; 将半导体组件冷却至等于或大致等于室温的温度T3，并将半导体组件保持在温度T3超过时间T3; 在T4和nlE; -35℃下将半导体组件冷却至温度T4，并将T4半导体组件保持在T4温度下; 并将半导体组件加热至室温。

公开(公告)号：US20150311356A1

公开(公告)日：2015-10-29

申请号：US13821203

申请日：2011-09-06

申请人： Henning NAGEL ,  Knut VAAS ,  Wilfried SCHMIDT

发明人： Henning NAGEL ,  Knut VAAS ,  Wilfried SCHMIDT

IPC分类号： H01L31/028 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/068

CPC分类号： H01L31/028 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a crystalline solar cell having a p-doped silicon substrate with an n-doped region on the front side and also at least one antireflection layer is provided. The method includes uniformly applying a solution containing phosphoric acid to the entire front-side surface of the solar cell, forming phosphosilicate glass in a first thermal treatment step applied to the solar cell, and, in the first thermal treatment step or a subsequent thermal treatment step, forming silicon-containing precipitates near the surface with a homogeneous or substantially homogeneous surface coverage in a layer on the front-side surface of the substrate in the range of between 5% and 100%.

摘要翻译： 提供了具有在前侧具有n掺杂区域的p掺杂硅衬底以及至少一个抗反射层的晶体太阳能电池的制造方法。 该方法包括将均匀地施加到太阳能电池的整个正面的磷酸溶液，在施加到太阳能电池的第一热处理步骤中形成磷硅玻璃，在第一热处理步骤或随后的热处理 步骤，在表面附近形成含硅沉淀物，其在基材的正面表面上的层中均匀或基本均匀的表面覆盖率在5％至100％的范围内。

公开(公告)号：US20140132302A1

公开(公告)日：2014-05-15

申请号：US14123842

申请日：2012-06-05

申请人： Henning Nagel

发明人： Henning Nagel

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： G01R31/129 ,  H01L22/14 ,  H02S50/10

摘要： The invention relates to a method for measuring the high-voltage induced degradation (PID) of at least one solar cell. According to the invention, a conductive plastic material is pressed on the upper side or bottom side of the respective solar cell, in particular on the front side thereof, and a DC voltage greater than 50 V is applied between the plastic material and the respective solar cell. Alternatively, corona discharges may be applied to solar cells or photovoltaic modules. In one embodiment, a characteristic electric parameter of the respective solar cell or of the photovoltaic module is repeatedly measured at time intervals. The method according to the invention can be carried out on individual solar cells, which can be further processed directly after passing the test and without further complex processing, e.g. to a photovoltaic module. In principle, the method is also suitable for measurements on complete photovoltaic modules.

摘要翻译： 本发明涉及一种用于测量至少一个太阳能电池的高压诱导退化（PID）的方法。 根据本发明，导电塑料材料被压在各个太阳能电池的上侧或下侧，特别是在其前侧，并且在塑料材料和相应的太阳能之间施加大于50V的直流电压 细胞。 或者，可以将电晕放电施加到太阳能电池或光伏模块。 在一个实施例中，以时间间隔重复测量各个太阳能电池或光电模块的特征电参数。 根据本发明的方法可以在单独的太阳能电池上进行，其可以在通过测试之后直接进一步处理，而不需要进一步的复杂处理，例如， 到光伏模块。 原则上，该方法也适用于完整光伏组件的测量。

公开(公告)号：US20070048884A1

公开(公告)日：2007-03-01

申请号：US11465859

申请日：2006-08-21

申请人： Henning NAGEL

发明人： Henning NAGEL

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： H01L31/186 ,  G01N21/6489 ,  G01N21/66 ,  G01N21/9505 ,  H02S50/10 ,  Y02E10/50 ,  Y02P70/521

摘要： The invention relates to a method and to an arrangement for localizing production errors in a semiconductor component part by generating excess charge carriers in the semiconductor component part and by determining the electric potential in said part. In order to be able to localize production errors with simple measures and without damaging the semiconductor component part, it is suggested that the semiconductor component part be stimulated to become luminescent and that the locally resolved luminescence intensity distribution be determined in order to determine the locally resolved distribution of the electric potential in the semiconductor component part.

摘要翻译： 本发明涉及通过在半导体部件中产生过量电荷载流子并确定所述部件中的电位来定位半导体部件中的生产误差的方法和装置。 为了能够通过简单的测量来定位生产误差并且不损坏半导体部件，建议半导体组件部分被激发成为发光，并且确定局部解析的发光强度分布以便确定局部解决的 在半导体部件中分布电位。

公开(公告)号：US08273596B2

公开(公告)日：2012-09-25

申请号：US12781032

申请日：2010-05-17

申请人： Henning Nagel ,  Wilfried Schmidt ,  Ingo Schwirtlich ,  Dieter Franke

发明人： Henning Nagel ,  Wilfried Schmidt ,  Ingo Schwirtlich ,  Dieter Franke

IPC分类号： H01L21/70 ,  H01L31/18

CPC分类号： H01L24/02 ,  H01L31/022425 ,  H01L31/048 ,  H01L31/18 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12036 ,  Y02E10/50 ,  H01L2924/00

摘要： Process for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component like a solar cell, includes the steps of applying a moist material forming the contacts in a desired striplike and/or point-like arrangement on at least one exterior surface of the semiconductor component; drying the moist material by heating the semiconductor component to a temperature T1 and keeping the semiconductor element at temperature T1 over a time t1; sintering the dried material by heating the semiconductor component to a temperature T2 and keeping the semiconductor component at temperature T2 over a time t2; cooling the semiconductor component to a temperature T3 that is equal or roughly equal to room temperature, and keeping the semiconductor component at temperature T3 over a time T3; cooling the semiconductor component to a temperature T4 with T4≦−35° C. and keeping the semiconductor component at temperature T4 over a time T4; and heating the semiconductor component to room temperature.

摘要翻译： 在诸如太阳能电池的半导体部件上生产带状和/或点状导电触头的工艺包括以下步骤：将形成所需触点的潮湿材料以期望的带状和/或点状布置施加到至少一个 半导体部件的外表面; 通过将半导体组件加热至温度T1并将半导体元件保持在温度T1超过时间t1来干燥潮湿材料; 通过将半导体组件加热到温度T2并将半导体组件保持在温度T2超过时间t2来烧结干燥的材料; 将半导体组件冷却至等于或大致等于室温的温度T3，并将半导体组件保持在温度T3超过时间T3; 在T4和nlE; -35℃下将半导体组件冷却至温度T4，并将T4半导体组件保持在T4温度下; 并将半导体组件加热至室温。