摘要:
In a circuit, an integrated circuit package and methods for attaching integrated circuit dies or discrete power components to flanges of integrated circuit packages, each of the integrated circuit dies is sawed from a wafer. The thickness of the wafer is reduced by mechanical grinding, applying an isotropic wet chemical etching to the wafer to eliminate crystal defects, evaporating adhesion and diffusion barrier metals on the backside of the wafer, evaporating Au and Sn on the backside of the wafer, wherein the weight proportion of Au is equal to or larger than 85%, sawing the wafer into the circuit dies, and soldering each of the circuit dies to a respective flange of an integrated circuit package.
摘要:
A semiconductor device (7) has gold coatings (1 to 5) which are applied to metallic or ceramic components (6) of the semiconductor device (7). The gold coatings (1 to 4) have a multifunctional multilayer metal coating (8) with a minimal gold layer (9). The gold layer has a thickness dG where dG≦0.5 μm. Moreover, at least one metallic interlayer (10) is arranged between the gold layer (9) and the metallic or ceramic components (6).
摘要翻译:半导体器件(7)具有施加到半导体器件(7)的金属或陶瓷部件(6)的金涂层(1至5)。 金涂层(1至4)具有多金属多层金属涂层(8),最小金层(9)。 金层具有厚度d G G,其中d G <=0.5μm。 而且,在金层(9)和金属或陶瓷部件(6)之间至少设有一个金属中间层(10)。
摘要:
A laterally diffused metal oxide semiconductor (LDMOS) power package includes a conductive mounting flange mounted on a heat sink and electrically connected to a dielectric substrate of a printed circuit board. A plurality of transistors are mounted on the top surface of the mounting flange. Each of the transistors has an input terminal, an output terminal, and a ground terminal, with the ground terminal of each transistor being electrically coupled to the top surface of the mounting flange. A plurality of parallel ground signal return paths are provided to electrically couple the top surface of the mounting flange to the dielectric substrate, thereby reducing resistance and inductance in the ground signal path and increasing the efficiency of the power package.
摘要:
An LDMOS power package includes a mounting substrate having a surface with one or more alignment pedestals extending therefrom. Each alignment pedestal has a mounting surface facing away from the substrate surface to provide for uniform positioning of various semiconductor elements, e.g., a transistor die or impedance matching capacitors, relative to the substrate surface. The respective pedestal mounting surfaces are preferably conductive, and are electrically coupled to the flange surface, so as to electrically couple the respective capacitor and electrode ground terminals to the flange.
摘要:
A semiconductor device (7) has gold coatings (1 to 5) which are applied to metallic or ceramic components (6) of the semiconductor device (7). The gold coatings (1 to 4) have a multifunctional multilayer metal coating (8) with a minimal gold layer (9). The gold layer has a thickness dG where dG≦0.5 μm. Moreover, at least one metallic interlayer (10) is arranged between the gold layer (9) and the metallic or ceramic components (6).
摘要:
In a circuit, an integrated circuit package and methods for attaching integrated circuit dies or discrete power components to flanges of integrated circuit packages, each of the integrated circuit dies is sawed from a wafer. The thickness of the wafer is reduced by mechanical grinding, applying an isotropic wet chemical etching to the wafer to eliminate crystal defects, evaporating adhesion and diffusion barrier metals on the backside of the wafer, evaporating Au and Sn on the backside of the wafer, wherein the weight proportion of Au is equal to or larger than 85%, sawing the wafer into the circuit dies, and soldering each of the circuit dies to a respective flange of an integrated circuit package.