公开(公告)号：US09212048B2

公开(公告)日：2015-12-15

申请号：US13890363

申请日：2013-05-09

申请人： Johannes Classen ,  Heribert Weber ,  Mirko Hattass ,  Daniel Christoph Meisel

发明人： Johannes Classen ,  Heribert Weber ,  Mirko Hattass ,  Daniel Christoph Meisel

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81B3/0075 ,  B81B2207/07 ,  B81B2207/096 ,  B81C1/00238 ,  B81C1/00674 ,  B81C2203/0109 ,  H01L2224/16225 ,  H01L2924/19105

摘要： A hybridly integrated component includes an ASIC element having a processed front side, a first MEMS element having a micromechanical structure extending over the entire thickness of the first MEMS substrate, and a first cap wafer mounted over the micromechanical structure of the first MEMS element. At least one structural element of the micromechanical structure of the first MEMS element is deflectable, and the first MEMS element is mounted on the processed front side of the ASIC element such that a gap exists between the micromechanical structure and the ASIC element. A second MEMS element is mounted on the rear side of the ASIC element. The micromechanical structure of the second MEMS element extends over the entire thickness of the second MEMS substrate and includes at least one deflectable structural element.

摘要翻译： 混合集成部件包括具有经处理的前侧的ASIC元件，具有在第一MEMS基板的整个厚度上延伸的微机械结构的第一MEMS元件和安装在第一MEMS元件的微机械结构上的第一盖晶片。 第一MEMS元件的微机械结构的至少一个结构元件是可偏转的，并且第一MEMS元件安装在ASIC元件的经处理的正面上，使得在微机械结构和ASIC元件之间存在间隙。 第二个MEMS元件安装在ASIC元件的后侧。 第二MEMS元件的微机械结构在第二MEMS基板的整个厚度上延伸，并且包括至少一个可偏转的结构元件。

公开(公告)号：US09153523B2

公开(公告)日：2015-10-06

申请号：US14307108

申请日：2014-06-17

申请人： Heribert Weber ,  Hartmut Kueppers ,  Jochen Reinmuth ,  Neil Davies ,  Jens Frey

发明人： Heribert Weber ,  Hartmut Kueppers ,  Jochen Reinmuth ,  Neil Davies ,  Jens Frey

IPC分类号： H01L23/52 ,  H01L23/48 ,  B81C3/00

CPC分类号： H01L23/481 ,  B81C1/00238 ,  B81C3/001 ,  B81C2203/0109 ,  B81C2203/0792 ,  G01C19/5783 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an ASIC element, vias are integrated into the CMOS processing of an ASIC substrate. The ASIC element includes an active front side in which the circuit functions are implemented. The at least one via is intended to establish an electrical connection between the active front side and the rear side of the element. The front side of the via is defined by at least one front-side trench which is completely filled, and the rear side is defined by at least one rear-side trench which is not completely filled. The rear-side trench opens into the filled front-side trench.

摘要翻译： 在ASIC元件中，通孔被集成到ASIC基板的CMOS处理中。 ASIC元件包括其中实现电路功能的主动正面。 该至少一个通孔旨在在元件的主动前侧和后侧之间建立电连接。 通孔的前侧由完全填充的至少一个前侧沟槽限定，并且后侧由未完全填充的至少一个后侧沟槽限定。 后侧沟槽穿过填充的前侧沟槽。

公开(公告)号：US08993356B2

公开(公告)日：2015-03-31

申请号：US13232088

申请日：2011-09-14

申请人： Tjalf Pirk ,  Juergen Butz ,  Axel Franke ,  Frieder Haag ,  Heribert Weber ,  Arnim Hoechst ,  Sonja Knies

发明人： Tjalf Pirk ,  Juergen Butz ,  Axel Franke ,  Frieder Haag ,  Heribert Weber ,  Arnim Hoechst ,  Sonja Knies

IPC分类号： H01L21/00 ,  H01L23/31 ,  H01L21/56 ,  H01L23/58 ,  H01M6/40 ,  H01M10/04 ,  H01M10/0525 ,  H01L23/00 ,  H01L23/538 ,  H01L25/065

CPC分类号： H01L23/3121 ,  H01L21/561 ,  H01L21/568 ,  H01L23/5389 ,  H01L23/58 ,  H01L24/24 ,  H01L24/96 ,  H01L25/0655 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/0525 ,  Y02E60/122 ,  Y02P70/54 ,  H01L2924/00

摘要： A method for constructing an electrical circuit that includes at least one semiconductor chip encapsulated with a potting compound is disclosed. The method includes applying a galvanic layer arrangement for forming an electrochemical element on an element of the electrical circuit including the at least one semiconductor chip.

摘要翻译： 公开了一种构造电路的方法，该电路包括至少一个用封装化合物封装的半导体芯片。 该方法包括在包括至少一个半导体芯片的电路的元件上施加用于形成电化学元件的电偶层布置。

公开(公告)号：US08975118B2

公开(公告)日：2015-03-10

申请号：US13701277

申请日：2011-04-13

申请人： Julian Gonska ,  Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

发明人： Julian Gonska ,  Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

IPC分类号： H01L27/088 ,  H01L23/48 ,  B81C1/00 ,  H01L21/768

CPC分类号： H01L23/481 ,  B81B2203/033 ,  B81B2207/095 ,  B81C1/00095 ,  H01L21/76837 ,  H01L23/04 ,  H01L2224/48463 ,  H01L2924/1461 ,  H01L2924/00

摘要： An advantageous method and system for realizing electrically very reliable and mechanically extremely stable vias for components whose functionality is realized in a layer construction on a conductive substrate. The via (Vertical Interconnect Access), which is led to the back side of the component and which is used for the electrical contacting of functional elements realized in the layer construction, includes a connection area in the substrate that extends over the entire thickness of the substrate and is electrically insulated from the adjoining substrate by a trench-like insulating frame likewise extending over the entire substrate thickness. According to the present system, the trench-like insulating frame is filled up with an electrically insulating polymer.

摘要翻译： 一种有利的方法和系统，用于实现电气非常可靠和机械上非常稳定的通孔，用于在导电基底上的层结构中实现其功能的部件。 被引导到部件的背面并用于在层结构中实现的功能元件的电接触的通孔（垂直互连访问）包括在基板中的连接区域，该连接区域在整个厚度 并且通过类似于整个基板厚度延伸的沟槽状绝缘框架与邻接的基板电绝缘。 根据本系统，沟槽状绝缘框架填充有电绝缘聚合物。

公开(公告)号：US20150061049A1

公开(公告)日：2015-03-05

申请号：US14478117

申请日：2014-09-05

申请人： Heribert WEBER

发明人： Heribert WEBER

IPC分类号： G01L1/14 ,  H01L29/66

CPC分类号： G01L1/148 ,  B81B3/007 ,  B81B2201/0235 ,  B81B2201/0264 ,  G01L9/0073 ,  H01L29/66007

摘要： A micromechanical component for a capacitive sensor device includes first and second electrodes. The first electrode is at least partially formed from a first semiconductor layer and/or metal layer, and at least one inner side of the second electrode facing the first electrode is formed from a second semiconductor layer and/or metal layer. A cavity is between the first and second electrodes. Continuous recesses are structured into the inner side of the second electrode and sealed off with a closure layer. At least one reinforcing layer of the second electrode and at least one contact element which is electrically connected to the first electrode, to the layer of the second electrode which forms the inner side, to at least one printed conductor, and/or to a conductive substrate area, are formed from at least one epi-polysilicon layer. Also described is a micromechanical component manufacturing method for a capacitive sensor device.

摘要翻译： 用于电容传感器装置的微机械部件包括第一和第二电极。 第一电极至少部分地由第一半导体层和/或金属层形成，并且第二电极的面向第一电极的至少一个内侧由第二半导体层和/或金属层形成。 空腔在第一和第二电极之间。 连续的凹部被构造成第二电极的内侧并用闭合层密封。 至少一个第二电极的加强层和至少一个与第一电极电连接到形成内侧的第二电极层的至少一个接触元件到至少一个印刷导体和/或导电 衬底区域由至少一个外延多晶硅层形成。 还描述了一种用于电容式传感器装置的微机械部件制造方法。

公开(公告)号：US20140374917A1

公开(公告)日：2014-12-25

申请号：US14307055

申请日：2014-06-17

申请人： Heribert WEBER ,  Hartmut KUEPPERS ,  Jens Reutlingen ,  Neil DAVIES

发明人： Heribert WEBER ,  Hartmut KUEPPERS ,  Jens Reutlingen ,  Neil DAVIES

IPC分类号： H01L23/538 ,  H01L25/065

CPC分类号： H01L29/0657 ,  B81C1/00238 ,  B81C2203/0118 ,  B81C2203/0792 ,  H01L23/3114 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/48091 ,  H01L2224/48471 ,  H01L2225/06506 ,  H01L2225/06568 ,  H01L2924/00014

摘要： A vertically integrated hybrid component is implemented in the form of a wafer level package including: at least two element substrates assembled one above the other; a molded upper sealing layer made of an electrically insulating casting; and an external electrical contacting of the component being implemented on the top side via at least one contact stamp which is embedded in the sealing layer so that (i) its lower end is connected to a wiring level of an element substrate and (ii) its upper end is exposed in the surface of the sealing layer.

摘要翻译： 垂直集成的混合部件以晶片级封装的形式实现，包括：至少两个元件基板，一个彼此组装; 由电绝缘铸件制成的模制上密封层; 并且所述部件的外部电接触通过嵌入在所述密封层中的至少一个接触印模在顶侧上实现，使得（i）其下端连接到元件基板的布线层，以及（ii）其 上端暴露在密封层的表面。

公开(公告)号：US20140110800A1

公开(公告)日：2014-04-24

申请号：US14058806

申请日：2013-10-21

申请人： Johannes CLASSEN ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner

发明人： Johannes CLASSEN ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner

IPC分类号： B81C1/00 ,  B81B3/00

CPC分类号： B81C1/00015 ,  B81B3/0018 ,  B81B7/0058

摘要： A manufacturing method for a cap, for a hybrid vertically integrated component having a MEMS component a relatively large cavern volume having a low cavern internal pressure, and a reliable overload protection for the micromechanical structure of the MEMS component. A cap structure is produced in a flat cap substrate in a multistep anisotropic etching, and includes at least one mounting frame having at least one mounting surface and a stop structure, on the cap inner side, having at least one stop surface, the surface of the cap substrate being masked for the multistep anisotropic etching with at least two masking layers made of different materials, and the layouts of the masking layers and the number and duration of the etching steps being selected so that the mounting surface, the stop surface, and the cap inner side are situated at different surface levels of the cap structure.

摘要翻译： 一种用于具有MEMS部件的混合垂直集成部件的盖的制造方法，具有较低的洞穴内部压力的相对较大的洞穴体积以及用于MEMS部件的微机械结构的可靠的过载保护。 在多步骤各向异性蚀刻中，在平盖基板中制造盖结构，并且包括至少一个安装框架，该安装框架具有至少一个安装表面和止动结构，在盖内侧具有至少一个止动表面， 掩模基板被掩模用于具有由不同材料制成的至少两个掩模层的多步各向异性蚀刻，并且选择掩模层的布局以及蚀刻步骤的数量和持续时间，使得安装表面，止动表面和 帽内侧位于帽结构的不同表面水平处。

公开(公告)号：US20140091405A1

公开(公告)日：2014-04-03

申请号：US14044223

申请日：2013-10-02

申请人： Heribert WEBER

发明人： Heribert WEBER

IPC分类号： B81B3/00

CPC分类号： B81B3/0021 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0771 ,  G01L9/0073

摘要： A pressure sensor component includes a MEMS component having at least one pattern element that is able to be deflected perpendicular to the component plane, which is equipped with at least one electrode of a measuring capacitor device, and an ASIC component having integrated circuit elements and at least one back end stack, at least one counter-electrode of the measuring capacitor device being developed in a metallization plane of the back end stack. The MEMS component is mounted on the back end pile of the ASIC component. The MEMS component includes at least one pressure-sensitive diaphragm pattern and is mounted on the ASIC component in such a way that the pressure-sensitive diaphragm pattern spans a cavity between the MEMS component and the back end stack of the ASIC component.

摘要翻译： 压力传感器部件包括具有至少一个能够垂直于部件平面偏转的图案元件的MEMS部件，该元件平面配备有测量电容器装置的至少一个电极和具有集成电路元件的ASIC部件 至少一个后端堆叠，所述测量电容器装置的至少一个对电极在后端堆叠的金属化平面中显影。 MEMS组件安装在ASIC组件的后端堆上。 MEMS部件包括至少一个压敏光阑图案，并且以这样的方式安装在ASIC部件上，使得压敏光阑图案跨越MEMS部件和ASIC部件的后端垛之间的空腔。

公开(公告)号：US20130299924A1

公开(公告)日：2013-11-14

申请号：US13890450

申请日：2013-05-09

申请人： Heribert WEBER ,  Frank Fischer ,  Mirko Hattass ,  Yvonne Bergmann

发明人： Heribert WEBER ,  Frank Fischer ,  Mirko Hattass ,  Yvonne Bergmann

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81B3/0021 ,  B81B2201/025 ,  B81B2207/096 ,  B81C1/00238 ,  B81C1/00261 ,  B81C1/00301 ,  B81C2203/0792 ,  H01L2224/13 ,  H01L2224/48463 ,  H01L2224/73257 ,  H01L2924/1461 ,  H01L2924/00

摘要： A component system includes at least one MEMS element, a cap for a micromechanical structure of the MEMS element, and at least one ASIC substrate. The micromechanical structure of the MEMS element is implemented in the functional layer of an SOI wafer. The MEMS element is mounted face down, with the structured functional layer on the ASIC substrate, and the cap is implemented in the substrate of the SOI wafer. The ASIC substrate includes a starting substrate provided with a layered structure on both sides. At least one circuit level is implemented in each case both in the MEMS-side layered structure and in the rear-side layered structure of the ASIC substrate. In the ASIC substrate, at least one ASIC through contact is implemented which electrically contacts at least one circuit level of the rear-side layered structure and/or at least one circuit level of the MEMS-side layered structure.

摘要翻译： 组件系统包括至少一个MEMS元件，用于MEMS元件的微机械结构的盖以及至少一个ASIC基板。 MEMS元件的微机械结构在SOI晶片的功能层中实现。 MEMS元件面朝下安装，ASIC结构上的结构化功能层，并且帽被实现在SOI晶片的衬底中。 ASIC基板包括在两侧设置有分层结构的起始衬底。 在ASIC基板的MEMS侧分层结构和后侧层叠结构中，每种情况都至少实现一个电路电平。 在ASIC基板中，实现至少一个ASIC接触，其电接触后侧分层结构的至少一个电路电平和/或MEMS侧分层结构的至少一个电路电平。

公开(公告)号：US08558327B2

公开(公告)日：2013-10-15

申请号：US12451033

申请日：2008-02-29

申请人： Kathrin Knese ,  Heribert Weber ,  Simon Armbruster

发明人： Kathrin Knese ,  Heribert Weber ,  Simon Armbruster

IPC分类号： H01L29/84

CPC分类号： B81B3/0086 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  G01L9/0042 ,  G01L9/0073

摘要： A micromechanical component having a conductive substrate, a first conductive layer provided above the substrate and that forms, above a cavity provided in the substrate, an elastically deflectable diaphragm region of monocrystalline silicon and an adjacent peripheral region, a circuit trace level provided above the first conductive layer in a manner that is electrically insulated from the first conductive layer, the circuit trace level having above the diaphragm region a first electrode region and having above the peripheral region a first connection region electrically connected to the same, and a second conductive layer that is provided above the circuit trace level, the second conductive layer having above the diaphragm region a second electrode region that is electrically insulated from the first electrode region, and having above the peripheral region a second connection region electrically insulated from the second electrode region and electrically connected to the first connection region. Also provided is a suitable production method.

摘要翻译： 一种具有导电衬底的微机械部件，设置在衬底上方并在衬底中设置的空腔之上形成的第一导电层，单晶硅和相邻外围区域的可弹性偏转的膜片区域，设置在第一 导电层，其与第一导电层电绝缘的方式，电路迹线电平在隔膜区域上方具有第一电极区域，并且在周边区域上方具有与其电连接的第一连接区域;以及第二导电层， 设置在所述电路迹线电平之上，所述第二导电层在所述光阑区域上方具有与所述第一电极区域电绝缘的第二电极区域，并且在所述外围区域上方具有与所述第二电极区域电绝缘的第二连接区域， 连接到第一个连接 离子区。 还提供了合适的生产方法。