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    Switching element including carbon nanotubes and method for manufacturing the same
    1.
    发明授权
    Switching element including carbon nanotubes and method for manufacturing the same 有权
    包括碳纳米管的开关元件及其制造方法

    公开(公告)号：US08309992B2

    公开(公告)日：2012-11-13

    申请号：US12676218

    申请日：2008-09-08

    申请人： Satoru Toguchi ,  Hideaki Numata ,  Hiroyuki Endoh

    发明人： Satoru Toguchi ,  Hideaki Numata ,  Hiroyuki Endoh

    IPC分类号： H01L29/76

    CPC分类号： H01L51/105 ,  B82Y10/00 ,  G02B1/041 ,  H01L51/0003 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  C08L101/12

    摘要： A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process.

    摘要翻译： 可以在低温下制造的碳纳米管（CNT）分散膜用于活性层的开关元件的问题是，不能获得CNT与源极和漏极表面之间的充分的电接触和导热性。 本发明的开关元件具有这样的结构，其中碳纳米管和金属材料的混合层以及金属材料的金属层依次层叠在源极和漏极上，由此，CNT分散膜 并且电极表面可以彼此牢固的电，机械和热接触。 因此，以低温，方便，低成本的方法获得了表现出良好且稳定的晶体管特性的开关元件。

    Semiconductor element
    2.
    发明授权
    Semiconductor element 有权
    半导体元件

    公开(公告)号：US08253124B2

    公开(公告)日：2012-08-28

    申请号：US12676563

    申请日：2008-04-11

    申请人： Hideaki Numata ,  Kazuki Ihara

    发明人： Hideaki Numata ,  Kazuki Ihara

    IPC分类号： H01L29/06

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  G11C11/22 ,  G11C13/0014 ,  G11C13/025 ,  G11C2213/35 ,  G11C2213/73 ,  H01L51/0545 ,  H01L51/105

    摘要： This invention provides a semiconductor element which uses a plurality of carbon nanotubes as a current path, can reduce contact resistance of its electrode contact part, and has excellent electrical characteristics. This semiconductor element is characterized in that the semiconductor element includes a current path (16) comprised of a plurality of carbon nanotubes (18) and not less than two electrodes (14, 15) connected with the current path, wherein at least one or more of the electrodes is made of a mixture of a metal and a carbon material (17) having SP2 hybridized orbital, such as a multi-walled carbon nanotube, a glassy carbon, and graphite particles.

    摘要翻译： 本发明提供使用多个碳纳米管作为电流路径的半导体元件，可以降低其电极接触部的接触电阻，并且具有优异的电特性。 该半导体元件的特征在于，半导体元件包括由多个碳纳米管（18）构成的电流路径（16）和与电流路径连接的不少于两个的电极（14,15），其中至少一个或多个 的电极由具有SP2杂化轨道的金属和碳材料（17）的混合物制成，例如多壁碳纳米管，玻璃碳和石墨颗粒。

    MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY
    3.
    发明申请
    MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY 有权
    磁记忆体和磁性随机存取存储器

    公开(公告)号：US20090296454A1

    公开(公告)日：2009-12-03

    申请号：US12443349

    申请日：2007-09-25

    申请人： Takeshi Honda ,  Noboru Sakimura ,  Tadahiko Sugibayashi ,  Hideaki Numata ,  Norikazu Ohshima

    发明人： Takeshi Honda ,  Noboru Sakimura ,  Tadahiko Sugibayashi ,  Hideaki Numata ,  Norikazu Ohshima

    IPC分类号： G11C11/00 ,  G11C11/15 ,  G11C7/00

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

    摘要： A magnetic memory cell 1 is provided with a magnetic recording layer 10 which is a ferromagnetic layer and a pinned layer 30 connected with the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 has a magnetization inversion region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization inversion region 13 has a magnetization whose orientation is invertible and overlaps the pinned layer 30. The first magnetization fixed region 11 is connected with a first boundary B1 in the magnetization inversion region 13 and a magnetization orientation is fixed on a first direction. The second magnetization fixed region 12 is connected with a second boundary B2 in magnetization inversion region 13 and a magnetization orientation is fixed on a second direction. The first direction and the second direction are opposite to each other.

    摘要翻译： 磁存储单元1设置有磁记录层10，磁记录层10是铁磁层，和通过非磁性层20与磁记录层10连接的钉扎层30.磁记录层10具有磁化反转区域13， 第一磁化固定区域11和第二磁化固定区域12.磁化反转区域13具有其取向可反转并与被钉扎层30重叠的磁化。第一磁化固定区域11与磁化反转中的第一边界B1连接 区域13和磁化取向在第一方向固定。 第二磁化固定区域12与磁化反转区域13中的第二边界B2连接，并且磁化取向固定在第二方向上。 第一方向和第二方向彼此相反。

    Magnetic memory, and its operating method
    4.
    发明申请
    Magnetic memory, and its operating method 有权
    磁记忆体及其操作方法

    公开(公告)号：US20060056250A1

    公开(公告)日：2006-03-16

    申请号：US10512545

    申请日：2003-04-21

    申请人： Sadahiko Miura ,  Tadahiko Sugibayashi ,  Hideaki Numata ,  Kiyotaka Tsuji

    发明人： Sadahiko Miura ,  Tadahiko Sugibayashi ,  Hideaki Numata ,  Kiyotaka Tsuji

    IPC分类号： G11C7/00

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/16

    摘要： A technology for eliminating the defects in a tunnel insulation film of magnetic tunnel junction and for suppressing generation of a defective bit in an MRAM using magnetic tunnel junction in a memory. The magnetic memory includes a substrate, an interlayer insulation film covering the upper surface side of the substrate, memory cells, and plugs penetrating the interlayer insulation film. The memory cell includes a first magnetic layer formed on the upper surface side of the interlayer insulation film, a tunnel insulation layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel insulation layer. The plug is connected electrically with the first magnetic layer. The tunnel current passing part of the tunnel insulation layer located between the first and second magnetic layers is arranged, at least partially, so as not to overlap the plug in the direction perpendicular to the surface of the substrate.

    摘要翻译： 一种用于消除磁隧道结隧道绝缘膜中的缺陷并用于抑制在存储器中使用磁性隧道结的MRAM中的有缺陷位的产生的技术。 磁性存储器包括基板，覆盖基板的上表面侧的层间绝缘膜，存储单元和穿透层间绝缘膜的插塞。 存储单元包括形成在层间绝缘膜的上表面侧的第一磁性层，形成在第一磁性层上的隧道绝缘层和形成在隧道绝缘层上的第二磁性层。 插头与第一磁性层电连接。 位于第一和第二磁性层之间的隧道绝缘层的隧道电流通过部分被布置成至少部分地不与垂直于衬底的表面的方向上的插塞重叠。

    Magnetic random access memory having voltage control circuitry for maintaining sense lines at constant low voltages
    5.
    发明授权
    Magnetic random access memory having voltage control circuitry for maintaining sense lines at constant low voltages 有权
    磁性随机存取存储器具有用于将感测线保持在恒定低电压的电压控制电路

    公开(公告)号：US06462982B1

    公开(公告)日：2002-10-08

    申请号：US09962325

    申请日：2001-09-26

    申请人： Hideaki Numata ,  Koichi Takeda

    发明人： Hideaki Numata ,  Koichi Takeda

    IPC分类号： G11C1100

    CPC分类号： G11C11/15 ,  Y10S977/743

    摘要： A matrix array of memory cells are located on intersections of word lines and sense lines. Each memory cell has a magnetoresistance element and a switching element which establishes a connection between a corresponding sense line and the magnetoresistance element when a corresponding word line is addressed. A number of sense circuits are respectively provided for the sense lines. Each sense circuit includes a capacitive element connected to the corresponding sense line and a switching element for applying a voltage to the capacitive element and causing it to discharge when the corresponding sense line is addressed. The voltage developed across the capacitive element of each sense circuit is used to produce a binary output signal representative of information stored in an address memory cell. A number of voltage control elements are provided for maintaining the sense lines at constant lower voltages regardless of higher voltages produced by the sense circuits.

    摘要翻译： 存储器单元的矩阵阵列位于字线和感测线的交点上。 每个存储单元具有磁阻元件和开关元件，当对应的字线被寻址时，该开关元件在相应的感测线和磁阻元件之间建立连接。 分别为感测线提供多个感测电路。 每个感测电路包括连接到相应感测线的电容元件和用于向电容元件施加电压并使其在对应感测线被寻址时放电的开关元件。 在每个感测电路的电容元件两端产生的电压用于产生表示存储在地址存储单元中的信息的二进制输出信号。 提供多个电压控制元件用于将感测线保持在恒定的较低电压，而不管由感测电路产生的较高电压。

    Magnetic random access memory
    6.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US08526222B2

    公开(公告)日：2013-09-03

    申请号：US13606737

    申请日：2012-09-07

    申请人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

    发明人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

    IPC分类号： G11C11/15

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L23/367 ,  H01L27/222 ,  H01L43/08 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

    摘要： A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

    摘要翻译： 根据本发明的磁性随机存取存储器具有：包括具有可逆磁化强度的无磁化区的磁记录层，其中写入电流在面内方向上流过磁记录层; 具有固定磁化强度的磁化固定层; 设置在磁化自由区​​域和磁化固定层之间的非磁性层; 以及设置成与磁记录层相对并且具有接收和辐射在磁记录层中产生的热的功能的散热结构。 这样结构的磁性随机存取存储器通过使用散热器结构辐射在磁记录层中产生的热量，从而抑制由在面内方向上流动的写入电流引起的温度升高。

    MAGNETIC RANDOM ACCESS MEMORY
    8.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY 有权
    磁性随机存取存储器

    公开(公告)号：US20120320667A1

    公开(公告)日：2012-12-20

    申请号：US13590634

    申请日：2012-08-21

    申请人： Nobuyuki ISHIWATA ,  Hideaki NUMATA ,  Norikazu OHSHIMA

    发明人： Nobuyuki ISHIWATA ,  Hideaki NUMATA ,  Norikazu OHSHIMA

    IPC分类号： G11C11/02

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L23/367 ,  H01L27/222 ,  H01L43/08 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

    摘要： A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

    摘要翻译： 根据本发明的磁性随机存取存储器具有：包括具有可逆磁化强度的无磁化区的磁记录层，其中写入电流在面内方向上流过磁记录层; 具有固定磁化强度的磁化固定层; 设置在无磁化区域和磁化固定层之间的非磁性层; 以及设置成与磁记录层相对并且具有接收和辐射在磁记录层中产生的热的功能的散热结构。 这样结构的磁性随机存取存储器通过使用散热器结构辐射在磁记录层中产生的热量，从而抑制由在面内方向上流动的写入电流引起的温度升高。

    MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY
    10.
    发明申请
    MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY 有权
    磁记忆体和磁性随机存取存储器

    公开(公告)号：US20120206959A1

    公开(公告)日：2012-08-16

    申请号：US13433895

    申请日：2012-03-29

    申请人： TAKESHI HONDA ,  NOBORU SAKIMURA ,  TADAHIKO SUGIBAYASHI ,  HIDEAKI NUMATA ,  NORIKAZU OHSHIMA

    发明人： TAKESHI HONDA ,  NOBORU SAKIMURA ,  TADAHIKO SUGIBAYASHI ,  HIDEAKI NUMATA ,  NORIKAZU OHSHIMA

    IPC分类号： G11C11/14

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

    摘要： A magnetic memory cell 1 is provided with a magnetic recording layer 10 which is a ferromagnetic layer and a pinned layer 30 connected with the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 has a magnetization inversion region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization inversion region 13 has a magnetization whose orientation is invertible and overlaps the pinned layer 30. The first magnetization fixed region 11 is connected with a first boundary B1 in the magnetization inversion region 13 and a magnetization orientation is fixed on a first direction. The second magnetization fixed region 12 is connected with a second boundary B2 in magnetization inversion region 13 and a magnetization orientation is fixed on a second direction. The first direction and the second direction are opposite to each other.

    摘要翻译： 磁存储单元1设置有磁记录层10，磁记录层10是铁磁层，和通过非磁性层20与磁记录层10连接的钉扎层30.磁记录层10具有磁化反转区域13， 第一磁化固定区域11和第二磁化固定区域12.磁化反转区域13具有其取向可反转并与被钉扎层30重叠的磁化。第一磁化固定区域11与磁化反转中的第一边界B1连接 区域13和磁化取向在第一方向固定。 第二磁化固定区域12与磁化反转区域13中的第二边界B2连接，并且磁化取向固定在第二方向上。 第一方向和第二方向彼此相反。