公开(公告)号：US07763541B2

公开(公告)日：2010-07-27

申请号：US11563981

申请日：2006-11-28

申请人： Hidehiko Okuda ,  Akihiko Endo ,  Tatsumi Kusaba

发明人： Hidehiko Okuda ,  Akihiko Endo ,  Tatsumi Kusaba

IPC分类号： H01L21/302

CPC分类号： H01L21/3247 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3225 ,  H01L21/76254

摘要： There is provided a layer transferred wafer subjected to a process for regenerating to be reused many times for an SOI layer wafer which is used to manufacture an SOI wafer with an excellent process yield in which oxygen precipitate nuclei or oxygen precipitates are eliminated and generation of HF defects are inhibited by performing the process for regenerating the layer transferred wafer generated as a by-product by an ion implantation separation method.The process for regenerating a layer transferred wafer in which the layer transferred wafer 11b obtained as a by-product in manufacturing a bonded SOI wafer 10 by an ion implantation separation method so as to be reused for an SOI layer wafer 11 of the bonded SOI wafer 10, comprises: rapidly heating the layer transferred wafer 11b in an oxidizing atmosphere, then holding it for a fixed time and subsequently rapidly cooling it; and mirror-polishing a surface of the layer transferred wafer 11b.

摘要翻译： 提供了经过再生处理的层转移晶片，对于用于制造SOI晶片的SOI层晶片多次重复使用，其具有优异的工艺成品率，其中氧沉淀核或氧沉淀物被消除，产生HF 通过进行用于再生通过离子注入分离方法作为副产物产生的层转移晶片的过程来抑制缺陷。 再生层转移晶片的处理，其中通过离子注入分离方法在制造接合的SOI晶片10中作为副产物获得的作为副产物的晶片11b被再次用于接合的SOI晶片的SOI层晶片11 10，包括：在氧化气氛中快速加热转移晶片11b，然后保持固定时间，随后快速冷却; 并镜面抛光转印晶片11b的表面。

公开(公告)号：US20100144131A1

公开(公告)日：2010-06-10

申请号：US12630604

申请日：2009-12-03

申请人： Hidehiko Okuda

发明人： Hidehiko Okuda

IPC分类号： H01L21/762

CPC分类号： H01L21/76256

摘要： A bonded wafer is produced by a step of forming an oxygen ion implanted layer, a step of forming a wafer composite, a step of exposing the oxygen ion implanted layer, and a step of obtaining an active layer, wherein the exposed oxygen ion implanted layer is removed by sequentially subjecting to a first HF treatment, a given oxidation heat treatment, and then a second HF treatment.

摘要翻译： 通过形成氧离子注入层的步骤，形成晶片复合体的步骤，暴露氧离子注入层的步骤和获得有源层的步骤来制造键合晶片，其中暴露的氧离子注入层 通过依次进行第一HF处理，给定的氧化热处理，然后进行第二次HF处理来除去。

公开(公告)号：US20080124929A1

公开(公告)日：2008-05-29

申请号：US11563981

申请日：2006-11-28

申请人： Hidehiko Okuda ,  Akihiko Endo ,  Tatsumi Kusaba

发明人： Hidehiko Okuda ,  Akihiko Endo ,  Tatsumi Kusaba

IPC分类号： H01L21/302

CPC分类号： H01L21/3247 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3225 ,  H01L21/76254

摘要： There is provided a layer transferred wafer subjected to a process for regenerating to be reused many times for an SOI layer wafer which is used to manufacture an SOI wafer with an excellent process yield in which oxygen precipitate nuclei or oxygen precipitates are eliminated and generation of HF defects are inhibited by performing the process for regenerating the layer transferred wafer generated as a by-product by an ion implantation separation method.The process for regenerating a layer transferred wafer in which the layer transferred wafer 11b obtained as a by-product in manufacturing a bonded SOI wafer 10 by an ion implantation separation method so as to be reused for an SOI layer wafer 11 of the bonded SOI wafer 10, comprises: rapidly heating the layer transferred wafer 11b in an oxidizing atmosphere, then holding it for a fixed time and subsequently rapidly cooling it; and mirror-polishing a surface of the layer transferred wafer 11b.

摘要翻译： 提供了经过再生处理的层转移晶片，对于用于制造SOI晶片的SOI层晶片多次重复使用，其具有优异的工艺成品率，其中氧沉淀核或氧沉淀物被消除，产生HF 通过进行用于再生通过离子注入分离方法作为副产物产生的层转移晶片的过程来抑制缺陷。 再生层转移晶片的过程，其中通过离子注入分离法在制造接合的SOI晶片10中作为副产物获得的转移晶片11b的层转移晶片，以便再次用于键合SOI的SOI层晶片11 晶片10包括：在氧化气氛中快速加热转移晶片11b，然后将其保持固定时间，随后快速冷却; 并镜面抛光转移晶片11b的表面。

公开(公告)号：US07364984B2

公开(公告)日：2008-04-29

申请号：US11855736

申请日：2007-09-14

申请人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

发明人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming an oxide film at least on one surface of a first silicon substrate, implanting hydrogen ions from the surface of the first silicon substrate thereby forming an ion-implantation zone in the interior of the first silicon substrate, bonding the first silicon substrate over a second silicon substrate with the oxide film interposed thereby forming a laminated assembly, subjecting the laminated assembly to a first heating treatment consisting of heating at a specified temperature, so that the first silicon substrate is split at the ion-implantation zone thereby manufacturing a bonded substrate, flattening the exposed surface of the SOI layer by subjecting the bonded substrate to wet etching, subjecting the bonded substrate to a second heating treatment consisting of heating at 750 to 900° C. in an oxidative atmosphere thereby reducing damages inflicted to the SOI layer, and subjecting the resulting bonded substrate to a third heating treatment consisting of heating at 900 to 1200° C. thereby enhancing the bonding strength of the bonded substrate.

公开(公告)号：US20060027897A1

公开(公告)日：2006-02-09

申请号：US11200233

申请日：2005-08-10

申请人： Tatsumi Kusaba ,  Hidehiko Okuda

发明人： Tatsumi Kusaba ,  Hidehiko Okuda

IPC分类号： H01L29/167 ,  H01L29/30

CPC分类号： H01L21/02008 ,  H01L21/3225

摘要： This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×107 defects/cm3 or more, and an n-type impurity concentration of 1×1014 atoms/cm3 or less at a depth of within 5 μm from a surface of the wafer. This method for heat-treating p-type silicon wafers, the method includes the steps of: loading p-type silicon wafers onto a wafer boat, inserting into a vertical furnace, and holding in an argon gas ambient atmosphere at a temperature of 1100 to 1300° C. for one hour; moving the wafer boat to a transfer chamber and discharging the silicon wafers; and transferring to the wafer boat silicon wafers to be heat treated next, wherein after the discharge of the heat-treated silicon wafers, the silicon wafers to be heat-treated next are transferred to the wafer boat within a waiting time of less than two hours.

摘要翻译： 对该p型硅晶片进行热处理以具有10Ω·cm或更大的电阻率，5×10 7缺陷/ cm 3或更高的BMD密度， 并且在离晶片表面5微米深度的1×10 14原子/ cm 3或更小的n型杂质浓度。 这种用于热处理p型硅晶片的方法，该方法包括以下步骤：将p型硅晶片装载到晶片舟皿上，插入立式炉中，并在氩气环境气氛中保持在1100〜 1300℃1小时; 将晶片舟移动到转移室并排出硅晶片; 并转移到接下来要进行热处理的晶片舟状硅晶片上，其中在经过热处理的硅晶片放电之后，接下来要热处理的硅晶片在小于2小时的等待时间内转移到晶片舟皿 。

公开(公告)号：US20060027161A1

公开(公告)日：2006-02-09

申请号：US11196480

申请日：2005-08-04

申请人： Tatsumi Kusaba ,  Hidehiko Okuda ,  Yoshihisa Nonogaki

发明人： Tatsumi Kusaba ,  Hidehiko Okuda ,  Yoshihisa Nonogaki

IPC分类号： C30B28/14 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12

CPC分类号： C30B29/06 ,  C30B33/02

摘要： This method for heat-treating a silicon wafer includes: a step of subjecting a silicon wafer to a high-temperature heat treatment in an ambient gas atmosphere of hydrogen gas, argon gas or a mixture thereof; and a step of lowering a temperature at a rate of 2° C./min or less in a nitrogen-gas-containing ambient atmosphere in a portion or all of a process of lowering a temperature to a wafer removal temperature following said high-temperature heat treatment. This silicon wafer has a defect-free layer which is formed by a high-temperature heat treatment and is included in a surface thereof, wherein an average iron concentration in said surface is 1×1010 atoms/cm3 or less.

摘要翻译： 该硅晶片的热处理方法包括：在氢气，氩气或其混合物的环境气体气氛中对硅晶片进行高温热处理的步骤; 以及在含氮气体的环境气氛中以2℃/分钟以下的速度将温度降低的一部分或全部将温度降低到所述高温下的晶片去除温度的工序 热处理。 该硅晶片具有通过高温热处理形成的无缺陷层，并且包括在其表面中，其中所述表面中的平均铁浓度为1×10 10原子/ cm 2 > 3 以下。

公开(公告)号：US20110065258A1

公开(公告)日：2011-03-17

申请号：US12877439

申请日：2010-09-08

申请人： Hidehiko OKUDA ,  Takashi SAKAI

发明人： Hidehiko OKUDA ,  Takashi SAKAI

IPC分类号： H01L21/18

CPC分类号： H01L21/76243 ,  H01L21/306 ,  H01L21/30625 ,  H01L21/3105 ,  H01L21/76256

摘要： A bonded wafer is thinned from an active layer wafer side, and a thinning stop layer is exposed. Thereafter, the layer is made porous in an HF solution, and then the layer is polished and removed. Thus, the removal of the layer is easy; productivity of substrates is high; no defect is caused due to heat treatment; and evenness in polish amount within a wafer surface can be maintained.

摘要翻译： 接合晶片从有源层晶片侧变薄，并且减薄终止层被暴露。 此后，将该层在HF溶液中制成多孔，然后对该层进行抛光和除去。 因此，去除层是容易的; 基材生产率高; 热处理不会造成缺陷; 并且可以保持在晶片表面内的抛光量的均匀度。

公开(公告)号：US20090186464A1

公开(公告)日：2009-07-23

申请号：US12321725

申请日：2009-01-22

申请人： Nobuyuki Morimoto ,  Hideki Nishihata ,  Hidehiko Okuda ,  Akihiko Endo

发明人： Nobuyuki Morimoto ,  Hideki Nishihata ,  Hidehiko Okuda ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/26506 ,  H01L21/304 ,  H01L21/30608 ,  H01L21/30625 ,  H01L21/6835 ,  H01L21/76243 ,  H01L21/76254 ,  H01L2221/68363

摘要： In the method for producing a bonded wafer by bonding a wafer for active layer to a wafer for support layer and then thinning the wafer for active layer, when oxygen ions are implanted into the wafer for active layer, the implantation step is divided into two stages conducted under specified conditions.

摘要翻译： 在通过将活性层用晶片与支撑层用晶片接合而制造接合晶片的方法中，将活性层用晶片进行稀释时，将氧离子注入有源层用晶片时，将注入工序分为两个阶段 在规定条件下进行。

公开(公告)号：US20080213974A1

公开(公告)日：2008-09-04

申请号：US11957674

申请日：2007-12-17

申请人： Hidehiko OKUDA ,  Tatsumi KUSABA ,  Akihiko ENDO

发明人： Hidehiko OKUDA ,  Tatsumi KUSABA ,  Akihiko ENDO

IPC分类号： H01L21/30

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/76251 ,  H01L21/76256

摘要： The present invention provides a method of manufacturing a bonded wafer. The method comprises an oxidation step in which an oxide film is formed on at least one surface of a base wafer, a bonding step in which the base wafer on which the oxide film has been formed is bonded to a top wafer to form a bonded wafer, and a thinning step in which the top wafer included in the bonded wafer is thinned. The oxidation step comprises heating the base wafer to a heating temperature ranging from 800 to 1300° C. at a rate of temperature increase ranging from 1 to 300° C./second in an oxidizing atmosphere, and the bonding step is carried out so as to position the oxide film formed in the oxidation step at an interface of the top wafer and the base wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括在基底晶片的至少一个表面上形成氧化膜的氧化步骤，其上形成有氧化膜的基底晶片结合到顶部晶片以形成接合晶片的接合步骤 以及其中包含在接合晶片中的顶部晶片变薄的变薄步骤。 氧化步骤包括在氧化气氛中以1〜300℃/秒的升温速度将基底晶片加热至800〜1300℃的加热温度，并进行接合工序，使 将在氧化步骤中形成的氧化膜定位在顶部晶片和基底晶片的界面处。

公开(公告)号：US07416960B2

公开(公告)日：2008-08-26

申请号：US11855754

申请日：2007-09-14

申请人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

发明人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming an oxide film at least on one surface of a first silicon substrate, implanting hydrogen ions from the surface of the first silicon substrate thereby forming an ion-implantation zone in the interior of the first silicon substrate, bonding the first silicon substrate over a second silicon substrate with the oxide film interposed thereby forming a laminated assembly, subjecting the laminated assembly to a first heating treatment consisting of heating at a specified temperature, so that the first silicon substrate is split at the ion-implantation zone thereby manufacturing a bonded substrate, flattening the exposed surface of the SOI layer by subjecting the bonded substrate to wet etching, subjecting the bonded substrate to a second heating treatment consisting of heating at 750 to 900° C. in an oxidative atmosphere thereby reducing damages inflicted to the SOI layer, and subjecting the resulting bonded substrate to a third heating treatment consisting of heating at 900 to 1200° C. thereby enhancing the bonding strength of the bonded substrate.

摘要翻译： 本发明的目的是提供一种制造SOI层的方法，该方法没有损坏，厚度变化减小，厚度均匀。 通过提供一种用于制造SOI衬底的方法来满足目的，包括以下步骤：在第一硅衬底的至少一个表面上形成氧化物膜，从第一硅衬底的表面注入氢离子，从而形成离子注入区 在第一硅衬底的内部，将第一硅衬底与第二硅衬底接合，其中介于氧化膜之间，从而形成层叠组件，对层压组件进行第一加热处理，该加热处理由在特定温度下加热， 第一硅衬底在离子注入区分裂，从而制造键合衬底，通过对键合衬底进行湿蚀刻，使SOI层的暴露表面平坦化，对接合衬底进行第二次加热处理，该加热处理由750-900℃ 在氧化气氛中，从而降低对SOI层的损害，并使其受到影响 所得到的键合衬底进行第三加热处理，其由900至1200℃的加热组成，从而提高键合衬底的结合强度。